N-Channel - MOSFETs
8,155 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHP12N50E-BE3 TTI: SIHP12N50E-BE3 Vishay / Siliconix Availability: 1,600In StockMOSFETs TO220 500V 10.5A N-CH MOSFET | 1,600In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 10.5 A | 380 mOhms | 30 V | 4 V | 50 nC | - 55 C | + 150 C | 114 W | Enhancement | Tube | SIHP12N50E-GE3 | ||||
3,000In Stock | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 100 V | 8.1 A | 135 mOhms | 20 V | 3 V | 11 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||||
Mfr: XP3N9R5AYT TTI: XP3N9R5AYT YAGEO XSemi Availability: 6,000In StockMOSFETs N-CH 30V 38.7 A PMPAK-3x3 | 6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 38.7 A | 9.5 mOhms | 20 V | 3 V | 18 nC | - 55 C | + 150 C | 3.57 W | Enhancement | Reel | |||||
Mfr: SIHP180N60E-GE3 TTI: SIHP180N60E-GE3 Vishay Semiconductors Availability: 1,000In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 19 A | 180 mOhms | 30 V | 3 V | 22 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | |||||
Mfr: SIDR668DP-T1-GE3 TTI: SIDR668DP-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8DC | 12,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 95 A | 5.05 mOhms | 20 V | 2 V | 72 nC | - 55 C | + 150 C | 125 W | Enhancement | TrenchFET | Reel | ||||
6,000In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 30 V | 17.4 A | 5 mOhms | 20 V | 3 V | 21 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | ||||||
Mfr: SIHA22N60AE-GE3 TTI: SIHA22N60AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 600V 8A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 600 V | 20 A | 180 mOhms | 30 V | 4 V | 48 nC | - 55 C | + 150 C | 33 W | Enhancement | Reel | |||||
Mfr: SIR4602LDP-T1-RE3 TTI: SIR4602LDP-T1-RE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs PPAKSO8 N-CH 60V 15.2A | 12,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | 52.1 A | 10 mOhms | 20 V | 4 V | 19.1 nC | - 55 C | + 150 C | 59.5 W | Enhancement | Reel | |||||
Mfr: XP3NA3R4MT TTI: XP3NA3R4MT YAGEO XSemi Availability: 6,000In StockMOSFETs N-CH 30V 29.2 A PMPAK-5x6 | 6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 73 A | 3.4 mOhms | 20 V | 2.3 V | 23 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
Mfr: IRF820PBF-BE3 TTI: IRF820PBF-BE3 Vishay / Siliconix Availability: 30,000In StockMOSFETs TO220 500V 2.5A N-CH MOSFET | 30,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 2.5 A | 3 Ohms | 20 V | 4 V | 24 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | IRF820PBF | ||||
Mfr: SIHD2N80E-GE3 TTI: SIHD2N80E-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs 800V Vds 30V Vgs DPAK (TO-252) | 15,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 2.8 A | 2.38 Ohms | 30 V | 4 V | 9.8 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Reel | |||||
Mfr: SIZ918DT-T1-GE3 TTI: SIZ918DT-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs 30V Vds 20V Vgs PowerPAIR 6 x 5 | 12,000In Stock | Si | SMD/SMT | PowerPAIR-6x5-8 | N-Channel | 2 Channel | 30 V | 16 A, 28 A | 12 mOhms, 3.7 mOhms | 10 V | 1 V, 1.2 V | 14 nC, 67.3 nC | - 55 C | + 150 C | 29 W, 100 W | Enhancement | TrenchFET | Reel | SIZ918DT-GE3 | |||
Mfr: SIR106ADP-T1-RE3 TTI: SIR106ADP-T1-RE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs N-CHANNEL 100V PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 65.8 A | 8 mOhms | 20 V | 4 V | 26.5 nC, 34.5 nC | - 55 C | + 150 C | 83.3 W | Enhancement | TrenchFET | Reel | ||||
Mfr: XP70SL1K4AH TTI: XP70SL1K4AH YAGEO XSemi Availability: 6,000In StockMOSFETs N-CH 700V 3.2 A TO-252 | 6,000In Stock | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 700 V | 3.2 A | 1.4 Ohms | 20 V | 5 V | 10.5 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
Mfr: SIHP100N60E-GE3 TTI: SIHP100N60E-GE3 Vishay Semiconductors Availability: 1,000In StockMOSFETs 650V Vds; 30V Vgs TO-220AB | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 30 A | 100 mOhms | 30 V | 3 V | 50 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | |||||
Mfr: SIS4608LDN-T1-GE3 TTI: SIS4608LDN-T1-GE3 Vishay Availability: 6,000In StockMOSFETs PPAK1212 N-CH 60V 12.6A | 6,000In Stock | Si | SMD/SMT | PowerPAK 1212-8 | N-Channel | 1 Channel | 60 V | 24.7 A | 11.5 mOhms | 20 V | 3 V | 15 nC | - 55 C | + 150 C | 27.1 W | Enhancement | ||||||
Mfr: IRFI630GPBF TTI: IRFI630GPBF Vishay Semiconductors Availability: 500In StockMOSFETs TO220 200V 5.9A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 5.9 A | 400 mOhms | 20 V | 2 V | 43 nC | - 55 C | + 150 C | 32 W | Enhancement | Tube | |||||
Mfr: SIHG70N60AEF-GE3 TTI: SIHG70N60AEF-GE3 Vishay / Siliconix Availability: 500In StockMOSFETs 600V Vds 20V Vgs TO-247AC | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 60 A | 35.5 mOhms | 20 V | 2 V | 410 nC | - 55 C | + 150 C | 417 W | Enhancement | Tube | |||||
Mfr: SIHB105N60EF-GE3 TTI: SIHB105N60EF-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs EF Series Pwr MOSFET w/Fast Body Diode | 6,000In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 600 V | 29 A | 102 mOhms | 30 V | 5 V | 35 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | ||||||
Mfr: SIR632DP-T1-RE3 TTI: SIR632DP-T1-RE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 29 A | 28.5 mOhms | 20 V | 2 V | 21 nC | - 55 C | + 150 C | 69.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHG73N60AE-GE3 TTI: SIHG73N60AE-GE3 Vishay Semiconductors Availability: 500In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 60 A | 35 mOhms | 30 V | 4 V | 394 nC | - 55 C | + 150 C | 417 W | Enhancement | Tube | |||||
Mfr: SIS476DN-T1-GE3 TTI: SIS476DN-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 15,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 40 A | 2.05 mOhms | - 16 V, 20 V | 1 V | 77 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS476DN-GE3 | |||
Mfr: TPH1400ANH,L1Q TTI: TPH1400ANH,L1Q Toshiba Availability: 5,000In StockMOSFETs N-Ch 60V 42A 48W UMOSVIII 1440pF 22nC | 5,000In Stock | Si | N-Channel | 1 Channel | U-MOSVIII-H | Reel | ||||||||||||||||
Mfr: SI2366DS-T1-BE3 TTI: SI2366DS-T1-BE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT23 N-CH 30V 4.5A | 6,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 5.8 A | 36 mOhms | 20 V | 2.5 V | 3.2 nC | - 55 C | + 150 C | 2.1 W | Enhancement | Reel | SI2366DS-T1-GE3 | ||||
Mfr: SIHB15N60E-GE3 TTI: SIHB15N60E-GE3 Vishay / Siliconix Availability: 4,000In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 4,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 15 A | 280 mOhms | 30 V | 4 V | 39 nC | - 55 C | + 150 C | 180 W | Enhancement | Tube |