Si - MOSFETs
17,639 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 6 A | 2.4 Ohms | 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | ||||||
Mfr: SIA923EDJ-T1-GE3 TTI: SIA923EDJ-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds 8V Vgs PowerPAK SC-70 | 3,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 20 V | 4.5 A | 44 mOhms, 44 mOhms | 8 V | 1.4 V | 25 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA923EDJ-GE3 | |||
Mfr: SI7625DN-T1-GE3 TTI: SI7625DN-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 | 18,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 35 A | 5.6 mOhms | 20 V | 2.5 V | 126 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7625DN-GE3 | |||
Mfr: IXFH320N10T2 TTI: IXFH320N10T2 IXYS Availability: 180In StockMOSFETs TRENCHT2 HIPERFET PWR MOSFET 100V 320A | 180In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 320 A | 3.5 mOhms | 20 V | 4 V | 430 nC | - 55 C | + 175 C | 1 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: SUD15N15-95-E3 TTI: SUD15N15-95-E3 Vishay Semiconductors Availability: 6,000In StockMOSFETs RECOMMENDED ALT SUD1 | 6,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 150 V | 15 A | 95 mOhms | 20 V | 2 V | 25 nC | - 55 C | + 175 C | 62 W | Enhancement | TrenchFET | Reel | SUD15N15-95-BE3 | |||
Mfr: IRFBF20SPBF TTI: IRFBF20SPBF Vishay Semiconductors Availability: 150In StockMOSFETs TO263 900V 1.7A N-CH MOSFET | 150In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 900 V | 1.7 A | 8 Ohms | 20 V | 2 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Tube | |||||
150In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 85 V | 96 A | 13 mOhms | 15 V | 2 V | 180 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | ||||||
Mfr: SI7655DN-T1-GE3 TTI: SI7655DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V 3.6mOhm@10V 40A P-Ch G-III | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 40 A | 3 mOhms | 12 V | 1.1 V | 225 nC | - 50 C | + 150 C | 57 W | Enhancement | TrenchFET | Reel | SI7655DN-GE3 | |||
Mfr: SIHG47N60EF-GE3 TTI: SIHG47N60EF-GE3 Vishay / Siliconix Availability: 2,450In StockMOSFETs RECOMMENDED ALT SIHW | 2,450In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 65 mOhms | 30 V | 2 V | 228 nC | - 55 C | + 150 C | 379 W | Enhancement | Tube | |||||
Mfr: SI5442DU-T1-GE3 TTI: SI5442DU-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 20V Vds 8V Vgs PowerPAK ChipFET | 3,000In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel | 1 Channel | 20 V | 25 A | 10 mOhms | 8 V | 400 mV | 45 nC | - 55 C | + 150 C | 31 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHG20N50E-GE3 TTI: SIHG20N50E-GE3 Vishay Semiconductors Availability: 1,150In StockMOSFETs 500V Vds 30V Vgs TO-247AC | 1,150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 19 A | 184 mOhms | 30 V | 4 V | 46 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | |||||
Mfr: IRFZ48STRLPBF TTI: IRFZ48STRLPBF Vishay / Siliconix Availability: 1,600In StockMOSFETs TO263 N-CH 60V 50A | 1,600In Stock | Si | Reel | |||||||||||||||||||
Mfr: SSM6J507NU,LF TTI: SSM6J507NU,LF Toshiba Availability: 3,000In StockMOSFETs Small Signal MOSFET V=30V, I-10A | 3,000In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 1 Channel | 30 V | 10 A | 20 mOhms | - 25 V, 20 V | 1 V | 13.6 nC | - 55 C | + 150 C | 2.5 W | Enhancement | U-MOSVI | Reel | ||||
Mfr: SIHD240N60E-GE3 TTI: SIHD240N60E-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 600V Vds; +/-30V Vgs DPAK (TO-252) | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 12 A | 240 mOhms | 30 V | 3 V | 23 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | |||||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 180 A | 7.5 mOhms | 20 V | 2.5 V | 154 nC | - 55 C | + 150 C | 735 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SI3440ADV-T1-BE3 TTI: SI3440ADV-T1-BE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs TSOP6 150V 2.2A N-CH MOSFET | 12,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 150 V | 2.2 A | 380 mOhms | 20 V | 4 V | 1.65 nC | - 55 C | + 150 C | 3.6 W | Enhancement | Reel | SI3440ADV-T1-GE3 | ||||
Mfr: SIHB33N60E-GE3 TTI: SIHB33N60E-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 3,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 33 A | 99 mOhms | 30 V | 4 V | 100 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | |||||
Mfr: SIA462DJ-T1-GE3 TTI: SIA462DJ-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SC-70 | 3,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 30 V | 12 A | 18 mOhms | 20 V | 1.2 V | 17 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI4116DY-T1-GE3 TTI: SI4116DY-T1-GE3 Vishay Semiconductors Availability: 5,000In StockMOSFETs 25V Vds 12V Vgs SO-8 | 5,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 25 V | 18 A | 8.6 mOhms | 12 V | 600 mV | 56 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4466DY-T1-E3-S | |||
Mfr: SI5468DC-T1-GE3 TTI: SI5468DC-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs 1206-8 ChipFET | 3,000In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel | 1 Channel | 30 V | 6 A | 28 mOhms | 20 V | 1 V | 12 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI5468DC-GE3 | |||
Mfr: SIRA18ADP-T1-GE3 TTI: SIRA18ADP-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 18,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 30.6 A | 8.7 mOhms | - 16 V, 20 V | 1.2 V | 21.5 nC | - 55 C | + 150 C | 14.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHLL014TR-GE3 TTI: SIHLL014TR-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs TO-261 60V 2.7A N-CH MOSFET | 2,500In Stock | Si | Reel | |||||||||||||||||||
Mfr: RQ6C050UNTR TTI: RQ6C050UNTR ROHM Semiconductor Availability: 3,000In StockMOSFETs 1.5V Drive Nch MOSFET | 3,000In Stock | Si | SMD/SMT | SOT-457-6 | N-Channel | 1 Channel | 20 V | 5 A | 30 mOhms | 10 V | 1 V | 12 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | RQ6C050UN | ||||
Mfr: BUK7Y28-75B,115 TTI: BUK7Y28-75B,115 Nexperia Availability: 9,000In StockMOSFETs BUK7Y28-75B/SOT669/LFPAK | 9,000In Stock | Si | SMD/SMT | SOT-669-5 | N-Channel | 1 Channel | 75 V | 35.5 A | 23 mOhms | 20 V | 2 V | 21.2 nC | - 55 C | + 175 C | 85 W | Enhancement | Reel | 934063303115 | ||||
Mfr: IRL510PBF-BE3 TTI: IRL510PBF-BE3 Vishay / Siliconix Availability: 200In StockMOSFETs TO220 100V 5.6A N-CH MOSFET | 200In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | 10 V | 2 V | 6.1 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRL510PBF |