MOSFETs
18,702 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
140In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 1.6 A | 2.3 Ohms | - 20 V, 20 V | 4.5 V | 23.7 nC | - 55 C | + 150 C | 100 W | Depletion | Tube | ||||||
Mfr: SI4564DY-T1-GE3 TTI: SI4564DY-T1-GE3 Vishay Semiconductors Availability: 17,500In StockMOSFETs SO8 NPCH 40V 10A | 17,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel, P-Channel | 2 Channel | 40 V | 9.2 A, 10 A | 17.5 mOhms, 21 mOhms | - 20 V, 20 V | 800 mV, 1.2 V | 20.5 nC, 41.5 nC | - 55 C | + 150 C | 3.1 W, 3.2 W | Enhancement | TrenchFET | Reel | SI4542DY-T1-E3-S | |||
Mfr: SI5935CDC-T1-GE3 TTI: SI5935CDC-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds 8V Vgs 1206-8 ChipFET | 3,000In Stock | Si | SMD/SMT | ChipFET-8 | P-Channel | 2 Channel | 20 V | 4 A | 100 mOhms | - 8 V, 8 V | 400 mV | 11 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI5935CDC-GE3 SIR814DP-T1-GE3 | |||
Mfr: SIR606DP-T1-GE3 TTI: SIR606DP-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 37 A | 16.2 mOhms | - 20 V, 20 V | 2.4 V | 36.5 nC | - 55 C | + 150 C | 44.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIRA52ADP-T1-RE3 TTI: SIRA52ADP-T1-RE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 40V Vds 20/-16V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 131 A | 1.63 mOhms | - 16 V, 20 V | 1.1 V | 100 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 48 A | 65 mOhms | - 30 V, 30 V | 3 V | 76 nC | - 55 C | + 150 C | 660 W | Enhancement | HiPerFET | Tube | |||||
54,000In Stock | Si | SMD/SMT | SOT-363T-6 | N-Channel | 2 Channel | 30 V | 1.5 A | 240 mOhms | - 12 V, 12 V | 1.5 V | 1.6 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | US6K1 | |||||
Mfr: RU1C002ZPTCL TTI: RU1C002ZPTCL ROHM Semiconductor Availability: 3,000In StockMOSFETs 4V Drive Pch MOSFET Drive Pch | 3,000In Stock | Si | SMD/SMT | SOT-323FL-3 | P-Channel | 1 Channel | 20 V | 200 mA | 1.2 Ohms | - 10 V, 10 V | 1 V | 1.4 nC | - 55 C | + 150 C | 150 mW | Enhancement | Reel | RU1C002ZP | ||||
Mfr: SI4430BDY-T1-GE3 TTI: SI4430BDY-T1-GE3 Vishay / Siliconix Availability: 2,500In StockMOSFETs 30V 20A 3.0W 4.5mohm @ 10V | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 20 A | 4.5 mOhms | - 20 V, 20 V | 1 V | 36 nC | - 55 C | + 150 C | 3 W | Enhancement | TrenchFET | Reel | SI4430BDY-GE3 | |||
Mfr: IXFP22N65X2 TTI: IXFP22N65X2 IXYS Availability: 100In StockMOSFETs MOSFET 650V/22A Ultra Junction X2 | 100In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 22 A | 160 mOhms | - 30 V, 30 V | 2.7 V | 38 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||
Mfr: SIJ470DP-T1-GE3 TTI: SIJ470DP-T1-GE3 Vishay Semiconductors Availability: 6,000In Stock6,000 On Order Expected 20-Nov-26 MOSFETs 100V 9.1mOhm@10V 58.8A N-CH | 6,000In Stock6,000 On Order Expected 20-Nov-26 | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 100 V | 58.8 A | 7.6 mOhms | - 20 V, 20 V | 2.3 V | 56 nC | - 55 C | + 150 C | 56.8 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: TK8R2A06PL,S4X TTI: TK8R2A06PL,S4X Toshiba Availability: 1,200In StockMOSFETs N-Ch 60V 1990pF 29nC 50A 34W | 1,200In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 50 A | 6.1 mOhms | - 20 V, 20 V | 1.5 V | 28.3 nC | - 55 C | + 175 C | 36 W | Enhancement | U-MOSIX-H | Tube | ||||
Mfr: SI8817DB-T2-E1 TTI: SI8817DB-T2-E1 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | 3,000In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 20 V | 2.9 A | 61 mOhms | - 8 V, 8 V | 1 V | 19 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: IRF9Z34PBF-BE3 TTI: IRF9Z34PBF-BE3 Vishay / Siliconix Availability: 9,850In StockMOSFETs TO220 P-CH 60V 18A | 9,850In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 18 A | 140 mOhms | - 20 V, 20 V | 4 V | 34 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF9Z34PBF | ||||
Mfr: IRFP254PBF TTI: IRFP254PBF Vishay Semiconductors Availability: 10,650In StockMOSFETs TO247 250V 23A N-CH MOSFET | 10,650In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 23 A | 140 mOhms | - 20 V, 20 V | 2 V | 140 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: IRFPC60LCPBF TTI: IRFPC60LCPBF Vishay Semiconductors Availability: 425In StockMOSFETs TO247 600V 16A N-CH MOSFET | 425In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 16 A | 400 mOhms | - 30 V, 30 V | 2 V | 120 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: IRFP9240PBF TTI: IRFP9240PBF Vishay Semiconductors Availability: 950In StockMOSFETs TO247 200V 12A P-CH MOSFET | 950In Stock | Si | Through Hole | TO-247AC-3 | P-Channel | 1 Channel | 200 V | 12 A | 500 mOhms | - 20 V, 20 V | 2 V | 44 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | |||||
Mfr: IRF9Z24SPBF TTI: IRF9Z24SPBF Vishay Semiconductors Availability: 900In StockMOSFETs TO263 P-CH 60V 11A | 900In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 60 V | 11 A | 280 mOhms | - 20 V, 20 V | 4 V | 19 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | |||||
Mfr: SUP85N10-10-GE3 TTI: SUP85N10-10-GE3 Vishay / Siliconix Availability: 550In StockMOSFETs 100V 85A 250W 10.5mohm @ 10V | 550In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 85 A | 8.5 mOhms | - 20 V, 20 V | 1 V | 160 nC | - 55 C | + 175 C | 250 W | Enhancement | TrenchFET | Tube | ||||
Mfr: SI7137DP-T1-GE3 TTI: SI7137DP-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs -20V Vds 12V Vgs PowerPAK SO-8 | 15,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 20 V | 60 A | 1.95 mOhms | - 12 V, 12 V | 1.4 V | 390 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | SI7137DP-GE3 | |||
Mfr: IRF740APBF TTI: IRF740APBF Vishay Semiconductors Availability: 150In StockMOSFETs TO220 400V 10A N-CH MOSFET | 150In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | - 30 V, 30 V | 4 V | 36 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF740APBF-BE3 | ||||
Mfr: SI2369DS-T1-BE3 TTI: SI2369DS-T1-BE3 Vishay / Siliconix Availability: 9,000In Stock30,000 On Order Expected 18-Nov-26 MOSFETs SOT23 P-CH 30V 5.4A | 9,000In Stock30,000 On Order Expected 18-Nov-26 | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 7.6 A | 29 mOhms | - 20 V, 20 V | 2.5 V | 11.4 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2369DS-T1-GE3 | ||||
Mfr: SI6423DQ-T1-GE3 TTI: SI6423DQ-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -12V Vds 8V Vgs TSSOP-8 | 12,000In Stock | Si | SMD/SMT | TSSOP-8 | P-Channel | 1 Channel | 12 V | 9.5 A | 8.5 mOhms | - 8 V, 8 V | 400 mV | 110 nC | - 55 C | + 150 C | 1.5 W | Enhancement | TrenchFET | Reel | SI6423DQ-GE3 | |||
Mfr: SIHD7N60E-GE3 TTI: SIHD7N60E-GE3 Vishay / Siliconix Availability: 2,950In StockMOSFETs 600V Vds 30V Vgs DPAK (TO-252) | 2,950In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 7 A | 600 mOhms | - 30 V, 30 V | 4 V | 20 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | |||||
Mfr: SI2303CDS-T1-BE3 TTI: SI2303CDS-T1-BE3 Vishay / Siliconix Availability: 84,000In StockMOSFETs SOT23 P-CH 30V 1.9A | 84,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 2.7 A | 190 mOhms | - 20 V, 20 V | 3 V | 2 nC | - 55 C | + 150 C | 2.3 W | Enhancement | Reel | SI2303CDS-T1-GE3 |