MOSFETs
18,590 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRFBC40APBF TTI: IRFBC40APBF Vishay Semiconductors Availability: 50In StockMOSFETs TO220 600V 6.2A N-CH MOSFET | 50In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | - 30 V, 30 V | 4 V | 42 nC | - 55 C | + 150 C | 96 W | Enhancement | Tube | IRFBC40APBF-BE3 | ||||
Mfr: SIA913ADJ-T1-GE3 TTI: SIA913ADJ-T1-GE3 Vishay Semiconductors Availability: 72,000In StockMOSFETs 12V 4.5A 6.5W 61mohm @ 4.5V | 72,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 12 V | 4.5 A | 115 mOhms | - 8 V, 8 V | 1 V | 20 nC | - 55 C | + 150 C | 6.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA913ADJ-GE3 | |||
Mfr: SI4435DDY-T1-GE3 TTI: SI4435DDY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs -30V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 11.4 A | 24 mOhms | - 20 V, 20 V | 1 V | 50 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4435DDY-GE3 | |||
Mfr: SI7994DP-T1-GE3 TTI: SI7994DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 30 V | 60 A | 5.6 mOhms | - 20 V, 20 V | 3 V | 52 nC | - 55 C | + 150 C | 46 W | Enhancement | TrenchFET | Reel | SI7994DP-GE3 | |||
150In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 85 V | 24 A | 65 mOhms | - 15 V, 15 V | 4.5 V | 41 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchP | Tube | |||||
Mfr: SI7619DN-T1-GE3 TTI: SI7619DN-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 24 A | 21 mOhms | - 25 V, 25 V | 1 V | 32 nC | - 55 C | + 150 C | 27.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7141DP-T1-GE3 TTI: SI7141DP-T1-GE3 Vishay Semiconductors Availability: 21,000In StockMOSFETs -20V Vds 20V Vgs PowerPAK SO-8 | 21,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 20 V | 60 A | 1.9 mOhms | - 20 V, 20 V | 2.3 V | 265 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | SI7141DP-GE3 | |||
Mfr: IXFK64N60P3 TTI: IXFK64N60P3 IXYS Availability: 25In StockMOSFETs 600V 64A 0.095Ohm PolarP3 Power MOSFET | 25In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 600 V | 64 A | 95 mOhms | - 30 V, 30 V | 5 V | 145 nC | - 55 C | + 150 C | 1.13 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: SI1480DH-T1-GE3 TTI: SI1480DH-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 100V Vds 20V Vgs SC70-6 | 3,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 100 V | 2.6 A | 200 mOhms | - 20 V, 20 V | 3 V | 5 nC | - 55 C | + 150 C | 2.8 W | Enhancement | TrenchFET | Reel | SI1480DH-T1-BE3 | |||
Mfr: SI5936DU-T1-GE3 TTI: SI5936DU-T1-GE3 Vishay Semiconductors Availability: 0In Stock9,000 On Order Expected 16-Oct-26 MOSFETs 30V Vds 20V Vgs PowerPAK ChipFET | 0In Stock9,000 On Order Expected 16-Oct-26 | Si | SMD/SMT | ChipFET-8 | N-Channel | 2 Channel | 30 V | 6 A | 30 mOhms | - 20 V, 20 V | 1.2 V | 11 nC | - 55 C | + 150 C | 10.4 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SSM6N57NU,LF TTI: SSM6N57NU,LF Toshiba Availability: 3,000In StockMOSFETs 2N-Ch U-MOS VI FET ID 4A 30VDSS | 3,000In Stock | Si | N-Channel | 2 Channel | U-MOSVII-H | Reel | ||||||||||||||||
Mfr: IRFI840GPBF TTI: IRFI840GPBF Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 500V 4.6A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 4.6 A | 850 mOhms | - 20 V, 20 V | 2 V | 67 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
400In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | - 20 V, 20 V | 4 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRFZ40PBF-BE3 | |||||
Mfr: IRF840APBF-BE3 TTI: IRF840APBF-BE3 Vishay / Siliconix Availability: 1,600In StockMOSFETs TO220 500V 8A N-CH MOSFET | 1,600In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 30 V, 30 V | 4 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF840APBF | ||||
Mfr: IRFR9210PBF TTI: IRFR9210PBF Vishay Semiconductors Availability: 1,875In StockMOSFETs TO252 200V 1.9A P-CH MOSFET | 1,875In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 200 V | 1.9 A | 3 Ohms | - 20 V, 20 V | 4 V | 8.9 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
Mfr: IRFP048PBF TTI: IRFP048PBF Vishay Semiconductors Availability: 475In StockMOSFETs TO247 N-CH 60V 70A | 475In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 60 V | 70 A | 18 mOhms | - 20 V, 20 V | 4 V | 110 nC | - 55 C | + 175 C | 190 W | Enhancement | Tube | |||||
Mfr: SI7106DN-T1-GE3 TTI: SI7106DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 20V Vds 12V Vgs PowerPAK 1212-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 19.5 A | 6.2 mOhms | - 12 V, 12 V | 1.5 V | 17.5 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7106DN-GE3 | |||
Mfr: PSMN8R3-40YS,115 TTI: PSMN8R3-40YS,115 Nexperia Availability: 1,500In StockMOSFETs SOT669 N-CH 40V 70A | 1,500In Stock | Si | SMD/SMT | SOT-669-5 | N-Channel | 1 Channel | 40 V | 70 A | 8.3 mOhms | - 20 V, 20 V | 2 V | 20 nC | - 55 C | + 175 C | 74 W | Enhancement | Reel | 934063936115 | ||||
Mfr: SI7629DN-T1-GE3 TTI: SI7629DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 20V 35A 52W | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 3.8 mOhms | - 12 V, 12 V | 1.5 V | 177 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7629DN-GE3 | |||
Mfr: SIR440DP-T1-GE3 TTI: SIR440DP-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 20V Vds 20V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 60 A | 1.55 mOhms | - 20 V, 20 V | 1 V | 150 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR440DP-GE3 | |||
Mfr: SIHG052N60EF-GE3 TTI: SIHG052N60EF-GE3 Vishay / Siliconix Availability: 1,950In StockMOSFETs EF Series Pwr MOSFET w/Fast Body Diode | 1,950In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 48 A | 52 mOhms | - 30 V, 30 V | 5 V | 67 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | ||||||
Mfr: SI1965DH-T1-BE3 TTI: SI1965DH-T1-BE3 Vishay Availability: 66,000In StockMOSFETs SOT363 2PCH 12V 1.14A | 66,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 12 V | 1.3 A | 390 mOhms | - 8 V, 8 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | SI1965DH-T1-GE3 SI1965DH-T1-E3 | ||||
Mfr: SI3433CDV-T1-BE3 TTI: SI3433CDV-T1-BE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs TSOP6 P-CH 20V 5.2A | 12,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 6 A | 38 mOhms | - 8 V, 8 V | 1 V | 18 nC | - 55 C | + 150 C | 3.3 W | Enhancement | Reel | SI3433CDV-T1-GE3 | ||||
650In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 17 A | 100 mOhms | - 20 V, 20 V | 4 V | 25 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | IRFZ24PBF-BE3 | |||||
Mfr: SIS468DN-T1-GE3 TTI: SIS468DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 80V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 80 V | 30 A | 19.5 mOhms | - 20 V, 20 V | 1.5 V | 28 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS468DN-GE3 |
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