MOSFETs
18,730 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHG47N60EF-GE3 TTI: SIHG47N60EF-GE3 Vishay / Siliconix Availability: 450In StockMOSFETs RECOMMENDED ALT SIHW | 450In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 65 mOhms | 30 V | 2 V | 228 nC | - 55 C | + 150 C | 379 W | Enhancement | Tube | |||||
Mfr: IRFL210TRPBF-BE3 TTI: IRFL210TRPBF-BE3 Vishay / Siliconix Availability: 5,000In StockMOSFETs SOT223 200V .96A N-CH MOSFET | 5,000In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 200 V | 960 mA | 1.5 Ohms | 20 V | 4 V | 8.2 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL210TRPBF | ||||
Mfr: IRFIBE30GPBF TTI: IRFIBE30GPBF Vishay Semiconductors Availability: 300In StockMOSFETs N-Channel Power MOSFET 2.1A, 800V, 78nC | 300In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 800 V | 2.1 A | 3 Ohms | 20 V | 2 V | 78 nC | - 55 C | + 150 C | 35 W | Enhancement | Tube | |||||
Mfr: RUE002N02TL TTI: RUE002N02TL ROHM Semiconductor Availability: 90,000In StockMOSFETs Sm Signal, Sw MOSFET N Chan, 20V, 0.2A | 90,000In Stock | Si | SMD/SMT | SOT-416-3 | N-Channel | 1 Channel | 20 V | 200 mA | 1.2 Ohms | 8 V | 1 V | + 150 C | 150 mW | Enhancement | Reel | RUE002N02 | ||||||
Mfr: RZF030P01TL TTI: RZF030P01TL ROHM Semiconductor Availability: 9,000In StockMOSFETs Med Pwr, Sw MOSFET P Chan, -12V, 1.5A | 9,000In Stock | Si | SMD/SMT | SOT-323T-3 | P-Channel | 1 Channel | 12 V | 3 A | 39 mOhms | 10 V | 1 V | 18 nC | - 55 C | + 150 C | 800 mW | Enhancement | Reel | RZF030P01 | ||||
Mfr: SI3443CDV-T1-GE3 TTI: SI3443CDV-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds 12V Vgs TSOP-6 | 3,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 5.97 A | 100 mOhms | 12 V | 1.5 V | 7.53 nC | - 55 C | + 150 C | 3.2 W | Enhancement | TrenchFET | Reel | SI3443CDV-T1-BE3 SI3443CDV-GE3 | |||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 180 A | 7.5 mOhms | 20 V | 2.5 V | 154 nC | - 55 C | + 150 C | 735 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SI3440ADV-T1-BE3 TTI: SI3440ADV-T1-BE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs TSOP6 150V 2.2A N-CH MOSFET | 12,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 150 V | 2.2 A | 380 mOhms | 20 V | 4 V | 1.65 nC | - 55 C | + 150 C | 3.6 W | Enhancement | Reel | SI3440ADV-T1-GE3 | ||||
Mfr: SIA923EDJ-T1-GE3 TTI: SIA923EDJ-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds 8V Vgs PowerPAK SC-70 | 3,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 20 V | 4.5 A | 44 mOhms, 44 mOhms | 8 V | 1.4 V | 25 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA923EDJ-GE3 | |||
Mfr: SI5442DU-T1-GE3 TTI: SI5442DU-T1-GE3 Vishay Semiconductors Availability: 3,000In Stock3,000 On Order Expected 04-Oct-30 MOSFETs 20V Vds 8V Vgs PowerPAK ChipFET | 3,000In Stock3,000 On Order Expected 04-Oct-30 | Si | SMD/SMT | ChipFET-8 | N-Channel | 1 Channel | 20 V | 25 A | 10 mOhms | 8 V | 400 mV | 45 nC | - 55 C | + 150 C | 31 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7625DN-T1-GE3 TTI: SI7625DN-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 | 18,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 35 A | 5.6 mOhms | 20 V | 2.5 V | 126 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7625DN-GE3 | |||
Mfr: SSM6J507NU,LF TTI: SSM6J507NU,LF Toshiba Availability: 3,000In Stock6,000 On Order Expected 30-Dec-26 MOSFETs Small Signal MOSFET V=30V, I-10A | 3,000In Stock6,000 On Order Expected 30-Dec-26 | Si | SMD/SMT | UDFN-6 | P-Channel | 1 Channel | 30 V | 10 A | 20 mOhms | - 25 V, 20 V | 1 V | 13.6 nC | - 55 C | + 150 C | 2.5 W | Enhancement | U-MOSVI | Reel | ||||
Mfr: SSM3K15AMFV,L3F TTI: SSM3K15AMFV,L3F Toshiba Availability: 16,000In StockMOSFETs SM Sig N-CH MOS 30V 0.1A 20V VGSS | 16,000In Stock | Si | N-Channel | 1 Channel | U-MOSIII | Reel | ||||||||||||||||
150In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 85 V | 96 A | 13 mOhms | 15 V | 2 V | 180 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | ||||||
Mfr: SI4164DY-T1-GE3 TTI: SI4164DY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 30V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 30 A | 3.2 mOhms | 20 V | 1.2 V | 95 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4164DY-GE3 | |||
Mfr: SI1965DH-T1-GE3 TTI: SI1965DH-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -12V Vds 8V Vgs SC70-6 | 12,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 12 V | 1.3 A | 390 mOhms | 8 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1965DH-T1-BE3 SI1905DL-T1-GE3 SI1917EDH-T1-GE3 | |||
Mfr: IXFH320N10T2 TTI: IXFH320N10T2 IXYS Availability: 180In StockMOSFETs TRENCHT2 HIPERFET PWR MOSFET 100V 320A | 180In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 320 A | 3.5 mOhms | 20 V | 4 V | 430 nC | - 55 C | + 175 C | 1 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: SI4186DY-T1-GE3 TTI: SI4186DY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 20V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 20 V | 35.8 A | 2.6 mOhms | 20 V | 1.2 V | 90 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4186DY-GE3 | |||
Mfr: SUD50P10-43L-BE3 TTI: SUD50P10-43L-BE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs TO252 100V 37.1A P-CH MOSFET | 12,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 37.1 A | 43 mOhms | 20 V | 3 V | 54 nC | - 55 C | + 175 C | 136 W | Enhancement | Reel | SUD50P10-43L-E3 | ||||
Mfr: SIHG20N50E-GE3 TTI: SIHG20N50E-GE3 Vishay Semiconductors Availability: 1,150In StockMOSFETs 500V Vds 30V Vgs TO-247AC | 1,150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 19 A | 184 mOhms | 30 V | 4 V | 46 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | |||||
Mfr: IRF9620PBF-BE3 TTI: IRF9620PBF-BE3 Vishay / Siliconix Availability: 100In StockMOSFETs TO220 200V 3.5A P-CH MOSFET | 100In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 3.5 A | 1.5 Ohms | 20 V | 4 V | 22 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | IRF9620PBF | ||||
Mfr: IRFP460PBF TTI: IRFP460PBF Vishay Semiconductors Availability: 4,500In StockMOSFETs TO247 500V 20A N-CH MOSFET | 4,500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 20 A | 270 mOhms | 20 V | 2 V | 210 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
210In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 6 A | 2.4 Ohms | 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | ||||||
Mfr: SIR800ADP-T1-RE3 TTI: SIR800ADP-T1-RE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 20V Vds; 12/-8V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 177 A | 1.35 mOhms | - 8 V, 12 V | 600 mV | 53 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRL510PBF-BE3 TTI: IRL510PBF-BE3 Vishay / Siliconix Availability: 200In StockMOSFETs TO220 100V 5.6A N-CH MOSFET | 200In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | 10 V | 2 V | 6.1 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRL510PBF |