MOSFETs
18,590 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SSM6L09FUTE85LF TTI: SSM6L09FUTE85LF Toshiba Availability: 21,000In StockMOSFETs N-Ch P-Ch Sg FET 0.4A -0.2A 30V -30V | 21,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 30 V | 200 mA, 400 mA | 4 Ohms | - 20 V, 20 V | 1.8 V | - 55 C | + 150 C | 300 mW | Enhancement | Reel | ||||||
Mfr: SI7155DP-T1-GE3 TTI: SI7155DP-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs -40V Vds 20V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 40 V | 100 A | 3.6 mOhms | - 20 V, 20 V | 2.3 V | 220 nC | - 55 C | + 150 C | 104 W | Enhancement | Reel | |||||
60In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 6 A | 3.5 Ohms | - 20 V, 20 V | 5 V | 67 nC | - 55 C | + 150 C | 540 W | Enhancement | Tube | ||||||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 10 A | 1.1 Ohms | - 30 V, 30 V | 5.5 V | 40 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SI7121DN-T1-GE3 TTI: SI7121DN-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 30V 16A 52W 1.8mohm @ 10V | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 16 A | 18 mOhms | - 25 V, 25 V | 3 V | 43 nC | - 50 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7121DN-GE3 | |||
Mfr: RVQ040N05TR TTI: RVQ040N05TR ROHM Semiconductor Availability: 12,000In StockMOSFETs Med Pwr, Sw MOSFET N Chan, 45V, 4A | 12,000In Stock | Si | SMD/SMT | SOT-457T-6 | N-Channel | 1 Channel | 45 V | 4 A | 53 mOhms | - 21 V, 21 V | 2.5 V | 6.3 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | RVQ040N05 | ||||
Mfr: SI5468DC-T1-GE3 TTI: SI5468DC-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs 1206-8 ChipFET | 3,000In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel | 1 Channel | 30 V | 6 A | 28 mOhms | - 20 V, 20 V | 1 V | 12 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI5468DC-GE3 | |||
Mfr: RQ6C050UNTR TTI: RQ6C050UNTR ROHM Semiconductor Availability: 6,000In StockMOSFETs 1.5V Drive Nch MOSFET | 6,000In Stock | Si | SMD/SMT | SOT-457-6 | N-Channel | 1 Channel | 20 V | 5 A | 30 mOhms | - 10 V, 10 V | 1 V | 12 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | RQ6C050UN | ||||
Mfr: SI7252DP-T1-GE3 TTI: SI7252DP-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 100 V | 36.7 A | 14 mOhms | - 20 V, 20 V | 1.5 V | 27 nC | - 55 C | + 150 C | 46 W | Enhancement | TrenchFET | Reel | ||||
Mfr: TPH1R306P1,L1Q TTI: TPH1R306P1,L1Q Toshiba Availability: 5,000In Stock5,000 On Order Expected 15-Oct-26 MOSFETs SOP8-ADV PD=170W 1MHz PWR MOSFET TRNS | 5,000In Stock5,000 On Order Expected 15-Oct-26 | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V | 100 A | 2.3 mOhms | - 20 V, 20 V | 2.5 V | 91 nC | - 55 C | + 175 C | 170 W | Enhancement | U-MOSIX-H | Reel | ||||
Mfr: IRL510PBF-BE3 TTI: IRL510PBF-BE3 Vishay / Siliconix Availability: 500In StockMOSFETs TO220 100V 5.6A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | - 10 V, 10 V | 2 V | 6.1 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRL510PBF | ||||
Mfr: IRF820PBF-BE3 TTI: IRF820PBF-BE3 Vishay / Siliconix Availability: 30,000In StockMOSFETs TO220 500V 2.5A N-CH MOSFET | 30,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 2.5 A | 3 Ohms | - 20 V, 20 V | 4 V | 24 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | IRF820PBF | ||||
Mfr: IRFB9N60APBF-BE3 TTI: IRFB9N60APBF-BE3 Vishay / Siliconix Availability: 1,850In StockMOSFETs TO220 600V 9.2A N-CH MOSFET | 1,850In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 9.2 A | 750 mOhms | - 30 V, 30 V | 4 V | 49 nC | - 55 C | + 150 C | 170 W | Enhancement | Tube | IRFB9N60APBF | ||||
Mfr: SI3460DDV-T1-BE3 TTI: SI3460DDV-T1-BE3 Vishay / Siliconix Availability: 21,000In StockMOSFETs TSOP6 N-CH 20V 6.2A | 21,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 20 V | 7.9 A | 28 mOhms | - 8 V, 8 V | 1 V | 18 nC | - 55 C | + 150 C | 2.7 W | Enhancement | Reel | SI3460DDV-T1-GE3 | ||||
Mfr: SIRA18ADP-T1-GE3 TTI: SIRA18ADP-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 18,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 30.6 A | 8.7 mOhms | - 16 V, 20 V | 1.2 V | 21.5 nC | - 55 C | + 150 C | 14.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: BUK7Y28-75B,115 TTI: BUK7Y28-75B,115 Nexperia Availability: 9,000In StockMOSFETs SOT669 N-CH 75V 35.5A | 9,000In Stock | Si | SMD/SMT | SOT-669-5 | N-Channel | 1 Channel | 75 V | 35.5 A | 23 mOhms | - 20 V, 20 V | 2 V | 21.2 nC | - 55 C | + 175 C | 85 W | Enhancement | Reel | 934063303115 | ||||
Mfr: SI4116DY-T1-GE3 TTI: SI4116DY-T1-GE3 Vishay Semiconductors Availability: 10,000In StockMOSFETs 25V Vds 12V Vgs SO-8 | 10,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 25 V | 18 A | 8.6 mOhms | - 12 V, 12 V | 600 mV | 56 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4466DY-T1-E3-S | |||
Mfr: SI7129DN-T1-GE3 TTI: SI7129DN-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 35 A | 11.4 mOhms | - 20 V, 20 V | 2.8 V | 47.5 nC | - 50 C | + 150 C | 52.1 W | Enhancement | TrenchFET | Reel | SI7129DN-GE3 | |||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 30 A | 240 mOhms | - 20 V, 20 V | 2.5 V | 335 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | |||||
Mfr: TN2404K-T1-GE3 TTI: TN2404K-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 240V 0.2A 0.36W 4.0ohms @ 10V | 6,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 257 V | 200 mA | 2.2 Ohms | - 20 V, 20 V | 1.65 V | 4.87 nC | - 55 C | + 150 C | 360 mW | Enhancement | TrenchFET | Reel | TN2404K-GE3 | |||
60In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.7 kV | 2 A | 6.5 Ohms | - 20 V, 20 V | 4.5 V | 110 nC | - 55 C | + 150 C | 568 W | Enhancement | Tube | ||||||
Mfr: SI7431DP-T1-E3 TTI: SI7431DP-T1-E3 Vishay Semiconductors Availability: 9,000In StockMOSFETs -200V Vds 20V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 200 V | 3.8 A | 174 mOhms | - 20 V, 20 V | 4 V | 135 nC | - 55 C | + 150 C | 5.4 W | Enhancement | TrenchFET | Reel | SI7431DP-E3 | |||
Mfr: IRFPG50PBF TTI: IRFPG50PBF Vishay Semiconductors Availability: 725In StockMOSFETs TO247 1KV 6.1A N-CH MOSFET | 725In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 6.1 A | 2 Ohms | - 20 V, 20 V | 2 V | 190 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SIA462DJ-T1-GE3 TTI: SIA462DJ-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SC-70 | 3,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 30 V | 12 A | 18 mOhms | - 20 V, 20 V | 1.2 V | 17 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7119DN-T1-GE3 TTI: SI7119DN-T1-GE3 Vishay Semiconductors Availability: 24,000In StockMOSFETs -200V Vds 20V Vgs PowerPAK 1212-8 | 24,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 200 V | 3.8 A | 1.05 Ohms | - 20 V, 20 V | 4 V | 16.2 nC | - 50 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7119DN-GE3 |
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