MOSFETs
18,702 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIA906EDJ-T1-GE3 TTI: SIA906EDJ-T1-GE3 Vishay Semiconductors Availability: 27,000In StockMOSFETs 20V Vds 12V Vgs PowerPAK SC-70 | 27,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 2 Channel | 20 V | 4.5 A | 46 mOhms | - 8 V, 8 V | 600 mV | 950 pC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA906EDJ-GE3 | |||
Mfr: SIR184DP-T1-RE3 TTI: SIR184DP-T1-RE3 Vishay / Siliconix Availability: 18,000In Stock21,000 On Order Expected 15-Sep-26 MOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 18,000In Stock21,000 On Order Expected 15-Sep-26 | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 73 A | 4.7 mOhms | - 20 V, 20 V | 2 V | 21 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI2338DS-T1-BE3 TTI: SI2338DS-T1-BE3 Vishay / Siliconix Availability: 21,000In StockMOSFETs SOT23 N-CH 30V 5.5A | 21,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 6 A | 28 mOhms | - 20 V, 20 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2338DS-T1-GE3 | ||||
90In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 100 V | 140 A | 11 mOhms | - 20 V, 20 V | 5 V | 155 nC | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIR440DP-T1-GE3 TTI: SIR440DP-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 20V Vds 20V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 60 A | 1.55 mOhms | - 20 V, 20 V | 1 V | 150 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR440DP-GE3 | |||
650In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 17 A | 100 mOhms | - 20 V, 20 V | 4 V | 25 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | IRFZ24PBF-BE3 | |||||
Mfr: SIS468DN-T1-GE3 TTI: SIS468DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 80V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 80 V | 30 A | 19.5 mOhms | - 20 V, 20 V | 1.5 V | 28 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS468DN-GE3 | |||
Mfr: SI7629DN-T1-GE3 TTI: SI7629DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 20V 35A 52W | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 3.8 mOhms | - 12 V, 12 V | 1.5 V | 177 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7629DN-GE3 | |||
250In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 36 A | 45 mOhms | - 20 V, 20 V | 2.5 V | 21 nC | - 55 C | + 150 C | 170 W | Enhancement | HiPerFET | Tube | |||||
Mfr: IXTH260N055T2 TTI: IXTH260N055T2 IXYS Availability: 30In StockMOSFETs TRENCHT2 PWR MOSFET 55V 260A | 30In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 55 V | 260 A | 3.3 mOhms | - 20 V, 20 V | 2 V | 140 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
240In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 76 A | 25 mOhms | - 15 V, 15 V | 4 V | 197 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | |||||
Mfr: SSM3K2615R,LF TTI: SSM3K2615R,LF Toshiba Availability: 6,000In Stock120,000 On Order Expected 25-Nov-26 MOSFETs Small-Signal MOSFET | 6,000In Stock120,000 On Order Expected 25-Nov-26 | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 60 V | 2 A | 300 mOhms | - 20 V, 20 V | 800 mV | 6 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | MOSV | Reel | |||
Mfr: SIA929DJ-T1-GE3 TTI: SIA929DJ-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs -30V Vds 12V Vgs PowerPAK SC-70 | 15,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 30 V | 4.5 A | 52 mOhms, 52 mOhms | - 12 V, 12 V | 1.1 V | 21 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA929DJ-GE3 | |||
Mfr: SIRA18ADP-T1-GE3 TTI: SIRA18ADP-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 18,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 30.6 A | 8.7 mOhms | - 16 V, 20 V | 1.2 V | 21.5 nC | - 55 C | + 150 C | 14.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIA440DJ-T1-GE3 TTI: SIA440DJ-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 40V Vds 12V Vgs PowerPAK SC-70 | 3,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 40 V | 12 A | 26 mOhms | - 12 V, 12 V | 600 mV | 21.5 nC | - 50 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
150In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 85 V | 24 A | 65 mOhms | - 15 V, 15 V | 4.5 V | 41 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchP | Tube | |||||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 30 A | 240 mOhms | - 20 V, 20 V | 2.5 V | 335 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | |||||
60In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.7 kV | 2 A | 6.5 Ohms | - 20 V, 20 V | 4.5 V | 110 nC | - 55 C | + 150 C | 568 W | Enhancement | Tube | ||||||
Mfr: RVQ040N05TR TTI: RVQ040N05TR ROHM Semiconductor Availability: 6,000In StockMOSFETs Med Pwr, Sw MOSFET N Chan, 45V, 4A | 6,000In Stock | Si | SMD/SMT | SOT-457T-6 | N-Channel | 1 Channel | 45 V | 4 A | 53 mOhms | - 21 V, 21 V | 2.5 V | 6.3 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | RVQ040N05 | ||||
Mfr: SI1480DH-T1-GE3 TTI: SI1480DH-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 100V Vds 20V Vgs SC70-6 | 3,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 100 V | 2.6 A | 200 mOhms | - 20 V, 20 V | 3 V | 5 nC | - 55 C | + 150 C | 2.8 W | Enhancement | TrenchFET | Reel | SI1480DH-T1-BE3 | |||
Mfr: SI7431DP-T1-E3 TTI: SI7431DP-T1-E3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -200V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 200 V | 3.8 A | 174 mOhms | - 20 V, 20 V | 4 V | 135 nC | - 55 C | + 150 C | 5.4 W | Enhancement | TrenchFET | Reel | SI7431DP-E3 | |||
Mfr: TPH1R306P1,L1Q TTI: TPH1R306P1,L1Q Toshiba Availability: 5,000In Stock5,000 On Order Expected 15-Oct-26 MOSFETs SOP8-ADV PD=170W 1MHz PWR MOSFET TRNS | 5,000In Stock5,000 On Order Expected 15-Oct-26 | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V | 100 A | 2.3 mOhms | - 20 V, 20 V | 2.5 V | 91 nC | - 55 C | + 175 C | 170 W | Enhancement | U-MOSIX-H | Reel | ||||
Mfr: IRF820PBF-BE3 TTI: IRF820PBF-BE3 Vishay / Siliconix Availability: 30,000In StockMOSFETs TO220 500V 2.5A N-CH MOSFET | 30,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 2.5 A | 3 Ohms | - 20 V, 20 V | 4 V | 24 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | IRF820PBF | ||||
Mfr: IXFH60N65X2 TTI: IXFH60N65X2 IXYS Availability: 180In StockMOSFETs MOSFET 650V/60A Ultra Junction X2 | 180In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 60 A | 52 mOhms | - 30 V, 30 V | 2.7 V | 107 nC | - 55 C | + 150 C | 780 W | Enhancement | HiPerFET | Tube | ||||
Mfr: SIR870BDP-T1-RE3 TTI: SIR870BDP-T1-RE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs N-CHANNEL 100 V | 3,000In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 100 V | 81 A | 6.1 mOhms | - 20 V, 20 V | 3 V | 73 nC | - 55 C | + 150 C | 100 W | Enhancement | PowerPAK | Reel |