Si - MOSFETs
17,639 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI1965DH-T1-GE3 TTI: SI1965DH-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -12V Vds 8V Vgs SC70-6 | 12,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 12 V | 1.3 A | 390 mOhms | 8 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1965DH-T1-BE3 SI1905DL-T1-GE3 SI1917EDH-T1-GE3 | |||
Mfr: IRFR110PBF TTI: IRFR110PBF Vishay Semiconductors Availability: 2,550In StockMOSFETs N-Chan 100V 4.3 Amp | 2,550In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 4.3 A | 540 mOhms | 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | IRFR110PBF-BE3 | ||||
Mfr: SI3443CDV-T1-GE3 TTI: SI3443CDV-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds 12V Vgs TSOP-6 | 3,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 5.97 A | 100 mOhms | 12 V | 1.5 V | 7.53 nC | - 55 C | + 150 C | 3.2 W | Enhancement | TrenchFET | Reel | SI3443CDV-T1-BE3 SI3443CDV-GE3 | |||
Mfr: RUE002N02TL TTI: RUE002N02TL ROHM Semiconductor Availability: 90,000In StockMOSFETs Sm Signal, Sw MOSFET N Chan, 20V, 0.2A | 90,000In Stock | Si | SMD/SMT | SOT-416-3 | N-Channel | 1 Channel | 20 V | 200 mA | 1.2 Ohms | 8 V | 1 V | + 150 C | 150 mW | Enhancement | Reel | RUE002N02 | ||||||
Mfr: RZF030P01TL TTI: RZF030P01TL ROHM Semiconductor Availability: 6,000In StockMOSFETs Med Pwr, Sw MOSFET P Chan, -12V, 1.5A | 6,000In Stock | Si | SMD/SMT | SOT-323T-3 | P-Channel | 1 Channel | 12 V | 3 A | 39 mOhms | 10 V | 1 V | 18 nC | - 55 C | + 150 C | 800 mW | Enhancement | Reel | RZF030P01 | ||||
Mfr: SI7738DP-T1-GE3 TTI: SI7738DP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 30 A | 38 mOhms | 20 V | 4 V | 35 nC | - 55 C | + 150 C | 96 W | Enhancement | TrenchFET | Reel | SI7738DP-GE3 | |||
Mfr: IRF9520SPBF TTI: IRF9520SPBF Vishay Semiconductors Availability: 700In StockMOSFETs TO263 100V 6.8A P-CH MOSFET | 700In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 100 V | 6.8 A | 600 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | |||||
Mfr: SI7772DP-T1-GE3 TTI: SI7772DP-T1-GE3 Vishay Semiconductors Availability: 33,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 33,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 35.6 A | 13 mOhms | 20 V | 2.5 V | 18.5 nC | - 55 C | + 150 C | 29.8 W | Enhancement | TrenchFET | Reel | SI7772DP-GE3 | |||
Mfr: IRFIBE30GPBF TTI: IRFIBE30GPBF Vishay Semiconductors Availability: 300In StockMOSFETs N-Channel Power MOSFET 2.1A, 800V, 78nC | 300In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 800 V | 2.1 A | 3 Ohms | 20 V | 2 V | 78 nC | - 55 C | + 150 C | 35 W | Enhancement | Tube | |||||
Mfr: IRFR024PBF TTI: IRFR024PBF Vishay Semiconductors Availability: 900In StockMOSFETs TO252 N-CH 60V 14A | 900In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 14 A | 100 mOhms | 20 V | 2 V | 25 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: IRFP460PBF TTI: IRFP460PBF Vishay Semiconductors Availability: 3,500In StockMOSFETs TO247 500V 20A N-CH MOSFET | 3,500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 20 A | 270 mOhms | 20 V | 2 V | 210 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: IRF9620PBF-BE3 TTI: IRF9620PBF-BE3 Vishay / Siliconix Availability: 100In StockMOSFETs TO220 200V 3.5A P-CH MOSFET | 100In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 3.5 A | 1.5 Ohms | 20 V | 4 V | 22 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | IRF9620PBF | ||||
Mfr: SUD50P10-43L-BE3 TTI: SUD50P10-43L-BE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs TO252 100V 37.1A P-CH MOSFET | 12,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 37.1 A | 43 mOhms | 20 V | 3 V | 54 nC | - 55 C | + 175 C | 136 W | Enhancement | Reel | SUD50P10-43L-E3 | ||||
12,000In Stock | Si | SMD/SMT | TSMT-8 | N-Channel | 2 Channel | 40 V | 8 A | 17.7 mOhms | 20 V | 2.5 V | 10.6 nC | - 55 C | + 150 C | 1.5 W | Enhancement | Reel | QH8KB6 | |||||
3,000In Stock | Si | SMD/SMT | SOT-457T-6 | P-Channel | 2 Channel | 20 V | 1.5 A | 215 mOhms | 12 V | 2 V | 3 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | QS6J1 | |||||
Mfr: SIRA06DP-T1-GE3 TTI: SIRA06DP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 2.05 mOhms | - 16 V, 20 V | 1.1 V | 77 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA06DP-GE3 | |||
150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 6 A | 2.4 Ohms | 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | ||||||
Mfr: SIA923EDJ-T1-GE3 TTI: SIA923EDJ-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds 8V Vgs PowerPAK SC-70 | 3,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 20 V | 4.5 A | 44 mOhms, 44 mOhms | 8 V | 1.4 V | 25 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA923EDJ-GE3 | |||
Mfr: SI7625DN-T1-GE3 TTI: SI7625DN-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 | 18,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 35 A | 5.6 mOhms | 20 V | 2.5 V | 126 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7625DN-GE3 | |||
Mfr: IXFH320N10T2 TTI: IXFH320N10T2 IXYS Availability: 180In StockMOSFETs TRENCHT2 HIPERFET PWR MOSFET 100V 320A | 180In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 320 A | 3.5 mOhms | 20 V | 4 V | 430 nC | - 55 C | + 175 C | 1 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: SUD15N15-95-E3 TTI: SUD15N15-95-E3 Vishay Semiconductors Availability: 6,000In StockMOSFETs RECOMMENDED ALT SUD1 | 6,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 150 V | 15 A | 95 mOhms | 20 V | 2 V | 25 nC | - 55 C | + 175 C | 62 W | Enhancement | TrenchFET | Reel | SUD15N15-95-BE3 | |||
Mfr: IRFBF20SPBF TTI: IRFBF20SPBF Vishay Semiconductors Availability: 150In StockMOSFETs TO263 900V 1.7A N-CH MOSFET | 150In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 900 V | 1.7 A | 8 Ohms | 20 V | 2 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Tube | |||||
150In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 85 V | 96 A | 13 mOhms | 15 V | 2 V | 180 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | ||||||
Mfr: SI7655DN-T1-GE3 TTI: SI7655DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V 3.6mOhm@10V 40A P-Ch G-III | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 40 A | 3 mOhms | 12 V | 1.1 V | 225 nC | - 50 C | + 150 C | 57 W | Enhancement | TrenchFET | Reel | SI7655DN-GE3 | |||
Mfr: SIHG47N60EF-GE3 TTI: SIHG47N60EF-GE3 Vishay / Siliconix Availability: 2,450In StockMOSFETs RECOMMENDED ALT SIHW | 2,450In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 65 mOhms | 30 V | 2 V | 228 nC | - 55 C | + 150 C | 379 W | Enhancement | Tube |