MOSFETs
18,340 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI2305CDS-T1-BE3 TTI: SI2305CDS-T1-BE3 Vishay / Siliconix Availability: 24,000In StockMOSFETs SOT23 P-CH 8V 4.41A | 24,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 8 V | 5.8 A | 35 mOhms | - 8 V, 8 V | 1 V | 12 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2305CDS-T1-GE3 | ||||
400In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | - 20 V, 20 V | 4 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRFZ40PBF-BE3 | |||||
Mfr: RQ6C050UNTR TTI: RQ6C050UNTR ROHM Semiconductor Availability: 6,000In StockMOSFETs 1.5V Drive Nch MOSFET | 6,000In Stock | Si | SMD/SMT | SOT-457-6 | N-Channel | 1 Channel | 20 V | 5 A | 30 mOhms | - 10 V, 10 V | 1 V | 12 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | RQ6C050UN | ||||
Mfr: SI4435DDY-T1-GE3 TTI: SI4435DDY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs -30V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 11.4 A | 24 mOhms | - 20 V, 20 V | 1 V | 50 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4435DDY-GE3 | |||
Mfr: IXFH60N65X2 TTI: IXFH60N65X2 IXYS Availability: 180In StockMOSFETs MOSFET 650V/60A Ultra Junction X2 | 180In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 60 A | 52 mOhms | - 30 V, 30 V | 2.7 V | 107 nC | - 55 C | + 150 C | 780 W | Enhancement | HiPerFET | Tube | ||||
Mfr: SI5468DC-T1-GE3 TTI: SI5468DC-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs 1206-8 ChipFET | 3,000In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel | 1 Channel | 30 V | 6 A | 28 mOhms | - 20 V, 20 V | 1 V | 12 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI5468DC-GE3 | |||
60In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.7 kV | 2 A | 6.5 Ohms | - 20 V, 20 V | 4.5 V | 110 nC | - 55 C | + 150 C | 568 W | Enhancement | Tube | ||||||
Mfr: SSM6N57NU,LF TTI: SSM6N57NU,LF Toshiba Availability: 3,000In StockMOSFETs 2N-Ch U-MOS VI FET ID 4A 30VDSS | 3,000In Stock | Si | N-Channel | 2 Channel | U-MOSVII-H | Reel | ||||||||||||||||
Mfr: SI5936DU-T1-GE3 TTI: SI5936DU-T1-GE3 Vishay Semiconductors Availability: 3,000In Stock12,000 On Order Expected MOSFETs 30V Vds 20V Vgs PowerPAK ChipFET | 3,000In Stock12,000 On Order Expected | Si | SMD/SMT | ChipFET-8 | N-Channel | 2 Channel | 30 V | 6 A | 30 mOhms | - 20 V, 20 V | 1.2 V | 11 nC | - 55 C | + 150 C | 10.4 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7252DP-T1-GE3 TTI: SI7252DP-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 100 V | 36.7 A | 14 mOhms | - 20 V, 20 V | 1.5 V | 27 nC | - 55 C | + 150 C | 46 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI4116DY-T1-GE3 TTI: SI4116DY-T1-GE3 Vishay Semiconductors Availability: 10,000In StockMOSFETs 25V Vds 12V Vgs SO-8 | 10,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 25 V | 18 A | 8.6 mOhms | - 12 V, 12 V | 600 mV | 56 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4466DY-T1-E3-S | |||
Mfr: SI7619DN-T1-GE3 TTI: SI7619DN-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 | 15,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 24 A | 21 mOhms | - 25 V, 25 V | 1 V | 32 nC | - 55 C | + 150 C | 27.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7141DP-T1-GE3 TTI: SI7141DP-T1-GE3 Vishay Semiconductors Availability: 21,000In StockMOSFETs -20V Vds 20V Vgs PowerPAK SO-8 | 21,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 20 V | 60 A | 1.9 mOhms | - 20 V, 20 V | 2.3 V | 265 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | SI7141DP-GE3 | |||
30In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 500 V | 20 A | 450 mOhms | - 20 V, 20 V | 2 V | 103 nC | - 55 C | + 150 C | 460 W | Enhancement | Tube | ||||||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 30 A | 240 mOhms | - 20 V, 20 V | 2.5 V | 335 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | |||||
Mfr: SIR800ADP-T1-RE3 TTI: SIR800ADP-T1-RE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 20V Vds; 12/-8V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 177 A | 1.35 mOhms | - 8 V, 12 V | 600 mV | 53 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI7119DN-T1-GE3 TTI: SI7119DN-T1-GE3 Vishay Semiconductors Availability: 24,000In StockMOSFETs -200V Vds 20V Vgs PowerPAK 1212-8 | 24,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 200 V | 3.8 A | 1.05 Ohms | - 20 V, 20 V | 4 V | 16.2 nC | - 50 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7119DN-GE3 | |||
Mfr: SI7309DN-T1-GE3 TTI: SI7309DN-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs -60V Vds 20V Vgs PowerPAK 1212-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 60 V | 8 A | 146 mOhms | - 20 V, 20 V | 3 V | 14.5 nC | - 55 C | + 150 C | 19.8 W | Enhancement | TrenchFET | Reel | SI7309DN-GE3 | |||
Mfr: SIA913ADJ-T1-GE3 TTI: SIA913ADJ-T1-GE3 Vishay Semiconductors Availability: 60,000In Stock81,000 On Order Expected 25-Aug-27 MOSFETs 12V 4.5A 6.5W 61mohm @ 4.5V | 60,000In Stock81,000 On Order Expected 25-Aug-27 | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 12 V | 4.5 A | 115 mOhms | - 8 V, 8 V | 1 V | 20 nC | - 55 C | + 150 C | 6.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA913ADJ-GE3 | |||
Mfr: SI7431DP-T1-E3 TTI: SI7431DP-T1-E3 Vishay Semiconductors Availability: 9,000In StockMOSFETs -200V Vds 20V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 200 V | 3.8 A | 174 mOhms | - 20 V, 20 V | 4 V | 135 nC | - 55 C | + 150 C | 5.4 W | Enhancement | TrenchFET | Reel | SI7431DP-E3 | |||
Mfr: SI7994DP-T1-GE3 TTI: SI7994DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 30 V | 60 A | 5.6 mOhms | - 20 V, 20 V | 3 V | 52 nC | - 55 C | + 150 C | 46 W | Enhancement | TrenchFET | Reel | SI7994DP-GE3 | |||
Mfr: SI7129DN-T1-GE3 TTI: SI7129DN-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 35 A | 11.4 mOhms | - 20 V, 20 V | 2.8 V | 47.5 nC | - 50 C | + 150 C | 52.1 W | Enhancement | TrenchFET | Reel | SI7129DN-GE3 | |||
100In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 5 A | 2.8 Ohms | - 30 V, 30 V | 3 V | 33.4 nC | - 55 C | + 150 C | 250 W | Enhancement | HiPerFET | Tube | |||||
Mfr: IRFI644GPBF TTI: IRFI644GPBF Vishay Semiconductors Availability: 700In StockMOSFETs TO220 250V 7.9A N-CH MOSFET | 700In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 7.9 A | 280 mOhms | - 20 V, 20 V | 2 V | 68 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
78,000In Stock | Si | SMD/SMT | SOT-363T-6 | N-Channel | 2 Channel | 30 V | 1.5 A | 240 mOhms | - 12 V, 12 V | 1.5 V | 1.6 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | US6K1 |
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