MOSFETs
18,702 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: IRF740STRLPBF TTI: IRF740STRLPBF Vishay Semiconductors Availability: 800In Stock1,600 On Order Expected 09-Feb-27 MOSFETs TO263 400V 10A N-CH MOSFET | 800In Stock1,600 On Order Expected 09-Feb-27 | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | - 20 V, 20 V | 2 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: SIR5108DP-T1-RE3 TTI: SIR5108DP-T1-RE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs SO8 100V 55.9A N CHAN | 12,000In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 100 V | 55.9 A | 10.5 mOhms | - 20 V, 20 V | 4 V | 14.8 nC | - 55 C | + 150 C | 65.7 W | Enhancement | Reel | |||||
Mfr: PMGD290XN,115 TTI: PMGD290XN,115 Nexperia Availability: 3,000In StockMOSFETs PMGD290XN/SOT363/SC-88 | 3,000In Stock | Si | SMD/SMT | TSSOP-6 | N-Channel | 2 Channel | 20 V | 860 mA | 350 mOhms | - 12 V, 12 V | 500 mV | 720 pC | - 55 C | + 150 C | 410 mW | Enhancement | Reel | 934057731115 | ||||
Mfr: SI7655ADN-T1-GE3 TTI: SI7655ADN-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs -20V Vds 12V Vgs PowerPAK 1212-8S | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 40 A | 3.6 mOhms | - 12 V, 12 V | 500 mV | 150 nC | - 50 C | + 150 C | 57 W | Enhancement | TrenchFET | Reel | ||||
Mfr: RZF013P01TL TTI: RZF013P01TL ROHM Semiconductor Availability: 3,000In StockMOSFETs 1.5V Drive Pch MOSFET | 3,000In Stock | Si | SMD/SMT | SOT-323T-3 | P-Channel | 1 Channel | 12 V | 1.3 A | 260 mOhms | - 10 V, 10 V | 1 V | 2.4 nC | - 55 C | + 150 C | 800 mW | Enhancement | Reel | RZF013P01 | ||||
Mfr: SIA533EDJ-T1-GE3 TTI: SIA533EDJ-T1-GE3 Vishay Semiconductors Availability: 27,000In StockMOSFETs -12V Vds 8V Vgs PowerPAK SC-70 | 27,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel, P-Channel | 2 Channel | 12 V | 4.5 A | 34 mOhms, 59 mOhms | - 8 V, 8 V | 400 mV | 10 nC, 13 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA533EDJ-GE3 | |||
Mfr: SIR668ADP-T1-RE3 TTI: SIR668ADP-T1-RE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 93.6 A | 4 mOhms | - 20 V, 20 V | 4 V | 54 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI2338DS-T1-GE3 TTI: SI2338DS-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs SOT-23 | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 6 A | 28 mOhms | - 20 V, 20 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2338DS-T1-BE3 SI2338DS-GE3 | |||
Mfr: SI4058DY-T1-GE3 TTI: SI4058DY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 100V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 10.3 A | 26 mOhms | - 20 V, 20 V | 1.2 V | 12 nC | - 55 C | + 150 C | 5.6 W | Enhancement | Reel | |||||
Mfr: SIHB24N80AE-GE3 TTI: SIHB24N80AE-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs N-CHANNEL 800V E Series Pwr MOSFET | 3,000In Stock | Si | SMD/SMT | TO-263-4 | N-Channel | 1 Channel | 800 V | 21 A | 184 mOhms | - 30 V, 30 V | 4 V | 59 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | |||||
Mfr: SIHFR9310TRL-GE3 TTI: SIHFR9310TRL-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs TO252 400V 1.8A P-CH MOSFET | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | Reel | |||||||||||||||||
Mfr: IRFBF30PBF TTI: IRFBF30PBF Vishay Semiconductors Availability: 300In StockMOSFETs TO220 900V 3.6A N-CH MOSFET | 300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 900 V | 3.6 A | 3.7 Ohms | - 20 V, 20 V | 4 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBF30PBF-BE3 | ||||
Mfr: SISS42LDN-T1-GE3 TTI: SISS42LDN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs Nch 100V Vds 20V Vgs PowerPAK 1212-8S | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 100 V | 39 A | 14.9 mOhms | - 20 V, 20 V | 1 V | 48 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IXFH30N50Q3 TTI: IXFH30N50Q3 IXYS Availability: 150In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 500V/30A | 150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 30 A | 200 mOhms | - 30 V, 30 V | 3.5 V | 62 nC | - 55 C | + 150 C | 690 W | Enhancement | HiPerFET | Tube | ||||
Mfr: SIHG17N80AE-GE3 TTI: SIHG17N80AE-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs TO247 800V 15A N-CH MOSFET | 3,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 15 A | 250 mOhms | - 30 V, 30 V | 4 V | 41 nC | - 55 C | + 155 C | 179 W | Enhancement | Reel | |||||
Mfr: IXTH24N65X2 TTI: IXTH24N65X2 IXYS Availability: 1,710In Stock450 On Order Expected 20-Jan-27 MOSFETs TO247 650V 24A N-CH X2CLASS | 1,710In Stock450 On Order Expected 20-Jan-27 | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 24 A | 145 mOhms | - 30 V, 30 V | 3 V | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | |||||
Mfr: IRFBE20PBF TTI: IRFBE20PBF Vishay Semiconductors Availability: 450In StockMOSFETs TO220 800V 1.8A N-CH MOSFET | 450In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 1.8 A | 6.5 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Tube | IRFBE20PBF-BE3 | ||||
Mfr: IRFP450APBF TTI: IRFP450APBF Vishay Semiconductors Availability: 800In StockMOSFETs TO247 500V 14A N-CH MOSFET | 800In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 14 A | 400 mOhms | - 30 V, 30 V | 2 V | 64 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: IRF840ASPBF TTI: IRF840ASPBF Vishay Semiconductors Availability: 50In StockMOSFETs TO263 500V 8A N-CH MOSFET | 50In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 30 V, 30 V | 2 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: SI4162DY-T1-GE3 TTI: SI4162DY-T1-GE3 Vishay Semiconductors Availability: 40,000In StockMOSFETs 30V Vds 20V Vgs SO-8 | 40,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 19.3 A | 7.9 mOhms | - 20 V, 20 V | 3 V | 20 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4162DY-GE3 | |||
Mfr: SI4483ADY-T1-GE3 TTI: SI4483ADY-T1-GE3 Vishay Semiconductors Availability: 5,000In StockMOSFETs -30V Vds 25V Vgs SO-8 | 5,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 19.2 A | 15.3 mOhms | - 25 V, 25 V | 2.6 V | 135 nC | - 55 C | + 150 C | 5.9 W | Enhancement | TrenchFET | Reel | SI4483ADY-GE3 | |||
Mfr: SI7116DN-T1-GE3 TTI: SI7116DN-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 40V 16.4A 3.8W 7.8mohm @ 10V | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 16.4 A | 7.8 mOhms | - 20 V, 20 V | 2.5 V | 15 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7116DN-GE3 | |||
Mfr: SI7812DN-T1-GE3 TTI: SI7812DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 75V Vds 20V Vgs PowerPAK 1212-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 75 V | 16 A | 37 mOhms | - 20 V, 20 V | 3 V | 16 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7812DN-GE3 | |||
Mfr: SI2343CDS-T1-BE3 TTI: SI2343CDS-T1-BE3 Vishay / Siliconix Availability: 30,000In StockMOSFETs SOT23 P-CH 30V 4.2A | 30,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 5.9 A | 45 mOhms | - 20 V, 20 V | 2.5 V | 7 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2343CDS-T1-GE3 | ||||
Mfr: SIDR5102EP-T1-RE3 TTI: SIDR5102EP-T1-RE3 Vishay Availability: 6,000In StockMOSFETs SOT669 100V 126A N-CH MOSFET | 6,000In Stock | Si | 100 V | 8.9 A | 5.6 mOhms | - 20 V, 20 V | 4 V | 20 nC | - 55 C | + 175 C | 7.5 W | Reel |