MOSFETs
18,590 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SI1036X-T1-GE3 TTI: SI1036X-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs 30V Vds 8V Vgs SC89-6 | 9,000In Stock | Si | SMD/SMT | SC-89-6 | N-Channel | 2 Channel | 30 V | 610 mA | 540 mOhms | - 8 V, 8 V | 400 mV | 2 nC | - 55 C | + 150 C | 220 mW | Enhancement | Reel | |||||
90In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 3 A | 7.3 Ohms | - 30 V, 30 V | 2.5 V | 38.6 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | ||||||
Mfr: IRFR420TRLPBF TTI: IRFR420TRLPBF Vishay Semiconductors Availability: 27,000In StockMOSFETs TO252 500V 2.4A N-CH MOSFET | 27,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 2.4 A | 3 Ohms | - 20 V, 20 V | 4 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: IRFPE50PBF TTI: IRFPE50PBF Vishay Semiconductors Availability: 100In StockMOSFETs TO247 800V 7.8A N-CH MOSFET | 100In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 7.8 A | 1.2 Ohms | - 20 V, 20 V | 2 V | 200 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SUP53P06-20-E3 TTI: SUP53P06-20-E3 Vishay Semiconductors Availability: 950In StockMOSFETs 60V 53A 104.2W 19.5mohm @ 10V | 950In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 53 A | 16 mOhms | - 20 V, 20 V | 3 V | 115 nC | - 55 C | + 150 C | 104.2 W | Enhancement | TrenchFET | Tube | ||||
Mfr: SI7820DN-T1-E3 TTI: SI7820DN-T1-E3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 200V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 200 V | 1.7 A | 240 mOhms | - 20 V, 20 V | 2 V | 12.1 nC | - 55 C | + 150 C | 1.5 W | Enhancement | TrenchFET | Reel | SI7820DN-T1 | |||
Mfr: SI9933CDY-T1-GE3 TTI: SI9933CDY-T1-GE3 Vishay Semiconductors Availability: 7,500In StockMOSFETs -20V Vds 12V Vgs SO-8 | 7,500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 20 V | 4 A | 58 mOhms | - 12 V, 12 V | 600 mV | 17 nC | - 50 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI9933CDY-GE3 | |||
Mfr: SI4122DY-T1-GE3 TTI: SI4122DY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 40V Vds 25V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 27.2 A | 4.5 mOhms | - 25 V, 25 V | 1.2 V | 95 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4122DY-GE3 | |||
Mfr: SIR870ADP-T1-GE3 TTI: SIR870ADP-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 60 A | 5.5 mOhms | - 20 V, 20 V | 1.5 V | 80 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR870ADP-GE3 | |||
300In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1.2 kV | 12 A | 2 Ohms | - 30 V, 30 V | 4.5 V | 106 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | ||||||
Mfr: SIRA14DP-T1-GE3 TTI: SIRA14DP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 58 A | 4.25 mOhms | - 16 V, 20 V | 1.1 V | 29 nC | - 55 C | + 150 C | 31.2 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA14DP-GE3 | |||
Mfr: SIHB065N60E-GE3 TTI: SIHB065N60E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 650V Vds; 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 40 A | 65 mOhms | - 30 V, 30 V | 3 V | 74 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: SI3493DDV-T1-GE3 TTI: SI3493DDV-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs -20V Vds 8V Vgs TSOP-6 | 9,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 20 mOhms | - 8 V, 8 V | 1 V | 52.2 nC | - 55 C | + 150 C | 3.6 W | Enhancement | Reel | |||||
Mfr: IRF9540PBF-BE3 TTI: IRF9540PBF-BE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO220 100V 19A P-CH MOSFET | 2,000In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 19 A | 200 mOhms | - 20 V, 20 V | 4 V | 61 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRF9540PBF | ||||
Mfr: IRFR9024PBF-BE3 TTI: IRFR9024PBF-BE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs TO252 P-CH 60V 8.8A | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 8.8 A | 280 mOhms | - 20 V, 20 V | 2 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: SSM3K56FS,LF TTI: SSM3K56FS,LF Toshiba Availability: 12,000In StockMOSFETs N-Ch U-MOSVI FET ID 0.8A 20VDSS 55pF | 12,000In Stock | Si | SMD/SMT | SOT-416-3 | N-Channel | 1 Channel | 20 V | 800 mA | 235 mOhms | - 8 V, 8 V | 400 mV | 1 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVII-H | Reel | ||||
210In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | - 20 V, 20 V | 2.5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | Tube | ||||||
Mfr: IRFP450LCPBF TTI: IRFP450LCPBF Vishay Semiconductors Availability: 250In StockMOSFETs TO247 500V 14A N-CH MOSFET | 250In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 14 A | 400 mOhms | - 30 V, 30 V | 2 V | 74 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SIR878BDP-T1-RE3 TTI: SIR878BDP-T1-RE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 42.5 A | 12 mOhms | - 20 V, 20 V | 2 V | 24.8 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRFI540GPBF TTI: IRFI540GPBF Vishay Semiconductors Availability: 500In StockMOSFETs TO220 100V 17A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 17 A | 77 mOhms | - 20 V, 20 V | 2 V | 72 nC | - 55 C | + 175 C | 48 W | Enhancement | Tube | |||||
Mfr: RYM002N05T2CL TTI: RYM002N05T2CL ROHM Semiconductor Availability: 8,000In StockMOSFETs .9V DRIVE N-Ch MOSFET | 8,000In Stock | Si | SMD/SMT | SOT-723-3 | N-Channel | 1 Channel | 50 V | 200 mA | 2.2 Ohms | - 8 V, 8 V | 800 mV | - 55 C | + 150 C | 150 mW | Enhancement | Reel | RYM002N05 | |||||
Mfr: SSM6L09FUTE85LF TTI: SSM6L09FUTE85LF Toshiba Availability: 21,000In StockMOSFETs N-Ch P-Ch Sg FET 0.4A -0.2A 30V -30V | 21,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 30 V | 200 mA, 400 mA | 4 Ohms | - 20 V, 20 V | 1.8 V | - 55 C | + 150 C | 300 mW | Enhancement | Reel | ||||||
Mfr: SI7155DP-T1-GE3 TTI: SI7155DP-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs -40V Vds 20V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 40 V | 100 A | 3.6 mOhms | - 20 V, 20 V | 2.3 V | 220 nC | - 55 C | + 150 C | 104 W | Enhancement | Reel | |||||
60In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 6 A | 3.5 Ohms | - 20 V, 20 V | 5 V | 67 nC | - 55 C | + 150 C | 540 W | Enhancement | Tube | ||||||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 10 A | 1.1 Ohms | - 30 V, 30 V | 5.5 V | 40 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube |