MOSFETs
18,730 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
240In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 76 A | 25 mOhms | 15 V | 4 V | 197 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | |||||
Mfr: SIR800ADP-T1-RE3 TTI: SIR800ADP-T1-RE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 20V Vds; 12/-8V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 177 A | 1.35 mOhms | - 8 V, 12 V | 600 mV | 53 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRL510PBF-BE3 TTI: IRL510PBF-BE3 Vishay / Siliconix Availability: 200In StockMOSFETs TO220 100V 5.6A N-CH MOSFET | 200In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | 10 V | 2 V | 6.1 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRL510PBF | ||||
Mfr: SI2302DDS-T1-BE3 TTI: SI2302DDS-T1-BE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs SOT23 N-CH 20V 2.6A | 12,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | Reel | SI2302DDS-T1-GE3 | ||||
Mfr: TPH1R306P1,L1Q TTI: TPH1R306P1,L1Q Toshiba Availability: 5,000In Stock5,000 On Order Expected 06-Oct-26 MOSFETs SOP8-ADV PD=170W 1MHz PWR MOSFET TRNS | 5,000In Stock5,000 On Order Expected 06-Oct-26 | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V | 100 A | 2.3 mOhms | 20 V | 2.5 V | 91 nC | - 55 C | + 175 C | 170 W | Enhancement | U-MOSIX-H | Reel | ||||
Mfr: SIR870BDP-T1-RE3 TTI: SIR870BDP-T1-RE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs N-CHANNEL 100 V | 3,000In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 100 V | 81 A | 6.1 mOhms | 20 V | 3 V | 73 nC | - 55 C | + 150 C | 100 W | Enhancement | PowerPAK | Reel | |||||
Mfr: IRFBC40APBF TTI: IRFBC40APBF Vishay Semiconductors Availability: 50In StockMOSFETs TO220 600V 6.2A N-CH MOSFET | 50In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | 30 V | 4 V | 42 nC | - 55 C | + 150 C | 96 W | Enhancement | Tube | IRFBC40APBF-BE3 | ||||
350In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | 20 V | 4 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRFZ40PBF-BE3 | |||||
Mfr: SIRA18ADP-T1-GE3 TTI: SIRA18ADP-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 18,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 30.6 A | 8.7 mOhms | - 16 V, 20 V | 1.2 V | 21.5 nC | - 55 C | + 150 C | 14.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: RYC002N05T316 TTI: RYC002N05T316 ROHM Semiconductor Availability: 9,000In StockMOSFETs 0.9V Drive Nch Si MOSFET | 9,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 50 V | 200 mA | 2.2 Ohms | 8 V | 800 mV | - 55 C | + 150 C | 350 mW | Enhancement | Reel | RYC002N05 | |||||
Mfr: SIHD2N80E-GE3 TTI: SIHD2N80E-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs 800V Vds 30V Vgs DPAK (TO-252) | 12,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 2.8 A | 2.38 Ohms | 30 V | 4 V | 9.8 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Reel | |||||
Mfr: RQ6C050UNTR TTI: RQ6C050UNTR ROHM Semiconductor Availability: 3,000In StockMOSFETs 1.5V Drive Nch MOSFET | 3,000In Stock | Si | SMD/SMT | SOT-457-6 | N-Channel | 1 Channel | 20 V | 5 A | 30 mOhms | 10 V | 1 V | 12 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | RQ6C050UN | ||||
Mfr: SI4116DY-T1-GE3 TTI: SI4116DY-T1-GE3 Vishay Semiconductors Availability: 10,000In StockMOSFETs 25V Vds 12V Vgs SO-8 | 10,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 25 V | 18 A | 8.6 mOhms | 12 V | 600 mV | 56 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4466DY-T1-E3-S | |||
Mfr: SI7129DN-T1-GE3 TTI: SI7129DN-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 35 A | 11.4 mOhms | 20 V | 2.8 V | 47.5 nC | - 50 C | + 150 C | 52.1 W | Enhancement | TrenchFET | Reel | SI7129DN-GE3 | |||
Mfr: SI7619DN-T1-GE3 TTI: SI7619DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 24 A | 21 mOhms | 25 V | 1 V | 32 nC | - 55 C | + 150 C | 27.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHLL014TR-GE3 TTI: SIHLL014TR-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs TO-261 60V 2.7A N-CH MOSFET | 2,500In Stock | Si | Reel | |||||||||||||||||||
Mfr: BUK7Y28-75B,115 TTI: BUK7Y28-75B,115 Nexperia Availability: 9,000In StockMOSFETs BUK7Y28-75B/SOT669/LFPAK | 9,000In Stock | Si | SMD/SMT | SOT-669-5 | N-Channel | 1 Channel | 75 V | 35.5 A | 23 mOhms | 20 V | 2 V | 21.2 nC | - 55 C | + 175 C | 85 W | Enhancement | Reel | 934063303115 | ||||
60In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.7 kV | 2 A | 6.5 Ohms | 20 V | 4.5 V | 110 nC | - 55 C | + 150 C | 568 W | Enhancement | Tube | ||||||
Mfr: SIHB33N60E-GE3 TTI: SIHB33N60E-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 3,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 33 A | 99 mOhms | 30 V | 4 V | 100 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | |||||
Mfr: SI2342DS-T1-BE3 TTI: SI2342DS-T1-BE3 Vishay / Siliconix Availability: 30,000In StockMOSFETs SOT23 N-CH 8V 6A | 30,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 8 V | 6 A | 17 mOhms | 5 V | 800 mV | 6 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2342DS-T1-GE3 | ||||
280In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1.2 kV | 1.4 A | 15 Ohms | 30 V | 4.5 V | 24.8 nC | - 55 C | + 150 C | 86 W | Enhancement | Tube | ||||||
Mfr: SI7121DN-T1-GE3 TTI: SI7121DN-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 30V 16A 52W 1.8mohm @ 10V | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 16 A | 18 mOhms | 25 V | 3 V | 43 nC | - 50 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7121DN-GE3 | |||
150In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 85 V | 24 A | 65 mOhms | 15 V | 4.5 V | 41 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchP | Tube | |||||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 30 A | 240 mOhms | 20 V | 2.5 V | 335 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | |||||
Mfr: SI5468DC-T1-GE3 TTI: SI5468DC-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs 1206-8 ChipFET | 3,000In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel | 1 Channel | 30 V | 6 A | 28 mOhms | 20 V | 1 V | 12 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI5468DC-GE3 |