N-Channel - MOSFETs
8,177 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHG018N60E-GE3 TTI: SIHG018N60E-GE3 Vishay Semiconductors Availability: 1,425In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 1,425In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 600 V | 99 A | 23 mOhms | 30 V | 3 V | 228 nC | - 55 C | + 150 C | 524 W | Enhancement | Tube | |||||
Mfr: IRFBE20PBF TTI: IRFBE20PBF Vishay Semiconductors Availability: 450In StockMOSFETs TO220 800V 1.8A N-CH MOSFET | 450In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 1.8 A | 6.5 Ohms | 20 V | 4 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Tube | IRFBE20PBF-BE3 | ||||
Mfr: IRFP450APBF TTI: IRFP450APBF Vishay Semiconductors Availability: 700In StockMOSFETs TO247 500V 14A N-CH MOSFET | 700In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 14 A | 400 mOhms | 30 V | 2 V | 64 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
300In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 150 V | 62 A | 33 mOhms | 20 V | 5.5 V | 70 nC | - 55 C | + 175 C | 350 W | Enhancement | PolarHT | Tube | |||||
Mfr: SI4162DY-T1-GE3 TTI: SI4162DY-T1-GE3 Vishay Semiconductors Availability: 40,000In StockMOSFETs 30V Vds 20V Vgs SO-8 | 40,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 19.3 A | 7.9 mOhms | 20 V | 3 V | 20 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4162DY-GE3 | |||
Mfr: SSM3K72CFS,LF TTI: SSM3K72CFS,LF Toshiba Availability: 3,000In StockMOSFETs Small-signal Nch MOSFET ID: 0.15A | 3,000In Stock | Si | SMD/SMT | SOT-416-3 | N-Channel | 1 Channel | 60 V | 170 mA | 2.8 Ohms | 20 V | 1.1 V | 350 pC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVII-H | Reel | ||||
Mfr: SI4058DY-T1-GE3 TTI: SI4058DY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 100V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 10.3 A | 26 mOhms | 20 V | 1.2 V | 12 nC | - 55 C | + 150 C | 5.6 W | Enhancement | Reel | |||||
Mfr: SIR668ADP-T1-RE3 TTI: SIR668ADP-T1-RE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 93.6 A | 4 mOhms | 20 V | 4 V | 54 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR622DP-T1-RE3 TTI: SIR622DP-T1-RE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 150V Vds; 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 51.6 A | 17.7 mOhms | 20 V | 2.5 V | 41 nC | - 55 C | + 150 C | 104 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: IRF630PBF-BE3 TTI: IRF630PBF-BE3 Vishay / Siliconix Availability: 2,500In StockMOSFETs TO220 200V 9A N-CH MOSFET | 2,500In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 9 A | 400 mOhms | 20 V | 4 V | 43 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF630PBF | ||||
Mfr: SIHG17N80AE-GE3 TTI: SIHG17N80AE-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs TO247 800V 15A N-CH MOSFET | 3,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 15 A | 250 mOhms | 30 V | 4 V | 41 nC | - 55 C | + 155 C | 179 W | Enhancement | Reel | |||||
Mfr: SISS42LDN-T1-GE3 TTI: SISS42LDN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs Nch 100V Vds 20V Vgs PowerPAK 1212-8S | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 100 V | 39 A | 14.9 mOhms | 20 V | 1 V | 48 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHB24N80AE-GE3 TTI: SIHB24N80AE-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs N-CHANNEL 800V E Series Pwr MOSFET | 2,000In Stock | Si | SMD/SMT | TO-263-4 | N-Channel | 1 Channel | 800 V | 21 A | 184 mOhms | 30 V | 4 V | 59 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | |||||
Mfr: SI2300DS-T1-BE3 TTI: SI2300DS-T1-BE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs SOT23 N-CH 30V 3.1A | 9,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.6 A | 68 mOhms | 12 V | 1.5 V | 3 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2300DS-T1-GE3 | ||||
Mfr: SIR104LDP-T1-RE3 TTI: SIR104LDP-T1-RE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs N-CHANNEL 100 V | 3,000In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 100 V | 81 A | 6.1 mOhms | 20 V | 3 V | 73 nC | - 55 C | + 150 C | 100 W | Enhancement | PowerPAK | Reel | |||||
Mfr: SI3474DV-T1-BE3 TTI: SI3474DV-T1-BE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs TSOP6 100V 3.8A N-CH MOSFET | 9,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 100 V | 3.8 A | 126 mOhms | 20 V | 1.2 V | 2.9 nC | - 55 C | + 150 C | 3.6 W | Enhancement | Reel | SI3474DV-T1-GE3 | ||||
Mfr: IRLI640GPBF TTI: IRLI640GPBF Vishay Semiconductors Availability: 2,600In StockMOSFETs TO220 200V 9.9A N-CH MOSFET | 2,600In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 9.9 A | 180 mOhms | 10 V | 1 V | 66 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
Mfr: SIHP22N60AE-BE3 TTI: SIHP22N60AE-BE3 Vishay / Siliconix Availability: 2,750In StockMOSFETs TO220 600V 20A N-CH MOSFET | 2,750In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 20 A | 156 mOhms | 30 V | 4 V | 96 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | SIHP22N60AE-GE3 | ||||
Mfr: RS7R125CHTB1 TTI: RS7R125CHTB1 ROHM Semiconductor Availability: 10In StockMOSFETs DFN 150V 125A N-CH | 10In Stock | Si | SMD/SMT | DFN5060-8 | N-Channel | 1 Channel | 150 V | 150 A | 8.3 mOhms | 20 V | 4 V | 49 nC | - 55 C | + 175 C | 217 W | Enhancement | Reel | |||||
Mfr: RS7E200BGTB1 TTI: RS7E200BGTB1 ROHM Semiconductor Availability: 10In StockMOSFETs DFN5060 N-CH 30V 390A | 10In Stock | Si | SMD/SMT | DFN5060-8S | N-Channel | 1 Channel | 30 V | 390 A | 670 uOhms | 20 V | 2.5 V | 135 nC | - 55 C | + 150 C | 180 W | Enhancement | Reel | |||||
Mfr: RS7N160BHTB1 TTI: RS7N160BHTB1 ROHM Semiconductor Availability: 10In StockMOSFETs DFN5060 N-CH 80V 160A | 10In Stock | Si | SMD/SMT | DFN5060-8S | N-Channel | 1 Channel | 80 V | 160 A | 2.6 mOhms | 20 V | 4 V | 73 nC | - 55 C | + 150 C | 160 W | Enhancement | Reel | |||||
Mfr: SIHG039N60EF-GE3 TTI: SIHG039N60EF-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO247 600V 61A N-CH MOSFET | 2,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 61 A | 40 mOhms | 30 V | 3 V | 84 nC | - 55 C | + 150 C | 357 W | Enhancement | Tube | |||||
Mfr: SIHF068N60EF-GE3 TTI: SIHF068N60EF-GE3 Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 600V 16A N-CH MOSFET | 1,000In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 16 A | 68 mOhms | 30 V | 5 V | 51 nC | - 55 C | + 150 C | 39 W | Enhancement | Reel | ||||||
Mfr: XP70SL1K4AH TTI: XP70SL1K4AH YAGEO XSemi Availability: 6,000In StockMOSFETs N-CH 700V 3.2 A TO-252 | 6,000In Stock | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 700 V | 3.2 A | 1.4 Ohms | 20 V | 5 V | 10.5 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
Mfr: XP3N5R0AMT TTI: XP3N5R0AMT YAGEO XSemi Availability: 3,000In StockMOSFETs N-CH 30V 63.5 A PMPAK-5x6 | 3,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 25 A | 5 mOhms | 20 V | 2.3 V | 40 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel |