N-Channel - MOSFETs
8,155 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI3410DV-T1-GE3 TTI: SI3410DV-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs TSOP-6 | 3,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 30 V | 8 A | 19.5 mOhms | 20 V | 1 V | 33 nC | - 55 C | + 150 C | 4.1 W | Enhancement | TrenchFET | Reel | SI3410DV-GE3 | |||
Mfr: IXFK64N60P3 TTI: IXFK64N60P3 IXYS Availability: 25In StockMOSFETs 600V 64A 0.095Ohm PolarP3 Power MOSFET | 25In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 600 V | 64 A | 95 mOhms | 30 V | 5 V | 145 nC | - 55 C | + 150 C | 1.13 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: RYC002N05T316 TTI: RYC002N05T316 ROHM Semiconductor Availability: 9,000In StockMOSFETs 0.9V Drive Nch Si MOSFET | 9,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 50 V | 200 mA | 2.2 Ohms | 8 V | 800 mV | - 55 C | + 150 C | 350 mW | Enhancement | Reel | RYC002N05 | |||||
Mfr: TN2404K-T1-GE3 TTI: TN2404K-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 240V 0.2A 0.36W 4.0ohms @ 10V | 6,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 257 V | 200 mA | 2.2 Ohms | 20 V | 1.65 V | 4.87 nC | - 55 C | + 150 C | 360 mW | Enhancement | TrenchFET | Reel | TN2404K-GE3 | |||
350In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | 20 V | 4 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRFZ40PBF-BE3 | |||||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 30 A | 240 mOhms | 20 V | 2.5 V | 335 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | |||||
Mfr: SI4116DY-T1-GE3 TTI: SI4116DY-T1-GE3 Vishay Semiconductors Availability: 10,000In StockMOSFETs 25V Vds 12V Vgs SO-8 | 10,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 25 V | 18 A | 8.6 mOhms | 12 V | 600 mV | 56 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4466DY-T1-E3-S | |||
Mfr: TPH1R306P1,L1Q TTI: TPH1R306P1,L1Q Toshiba Availability: 5,000In StockMOSFETs SOP8-ADV PD=170W 1MHz PWR MOSFET TRNS | 5,000In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V | 100 A | 2.3 mOhms | 20 V | 2.5 V | 91 nC | - 55 C | + 175 C | 170 W | Enhancement | U-MOSIX-H | Reel | ||||
Mfr: SI2392ADS-T1-BE3 TTI: SI2392ADS-T1-BE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs SOT233 100V 3.1A N-CH MOSFET | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 3.1 A | 126 mOhms | 20 V | 3 V | 2.9 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2392ADS-T1-GE3 | ||||
Mfr: RQ6C050UNTR TTI: RQ6C050UNTR ROHM Semiconductor Availability: 3,000In StockMOSFETs 1.5V Drive Nch MOSFET | 3,000In Stock | Si | SMD/SMT | SOT-457-6 | N-Channel | 1 Channel | 20 V | 5 A | 30 mOhms | 10 V | 1 V | 12 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | RQ6C050UN | ||||
Mfr: SI2302DDS-T1-BE3 TTI: SI2302DDS-T1-BE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs SOT23 N-CH 20V 2.6A | 12,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | Reel | SI2302DDS-T1-GE3 | ||||
Mfr: IRFI840GPBF TTI: IRFI840GPBF Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 500V 4.6A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 4.6 A | 850 mOhms | 20 V | 2 V | 67 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 400 mA | 80 Ohms | 20 V | 2 V | 5.8 nC | - 55 C | + 150 C | 25 W | Depletion | Tube | ||||||
Mfr: SSM3K7002KFU,LF TTI: SSM3K7002KFU,LF Toshiba Availability: 9,000In StockMOSFETs Small-signal MOSFET ID=0.4A VDSS=60V | 9,000In Stock | Si | SMD/SMT | SOT-323-3 | N-Channel | 1 Channel | 60 V | 400 mA | 1.05 Ohms | 20 V | 1.1 V | 390 pC | - 55 C | + 150 C | 700 mW | Enhancement | AEC-Q101 | U-MOSVII-H | Reel | |||
Mfr: RS7R125CHTB1 TTI: RS7R125CHTB1 ROHM Semiconductor Availability: 10In StockMOSFETs DFN 150V 125A N-CH | 10In Stock | Si | SMD/SMT | DFN5060-8 | N-Channel | 1 Channel | 150 V | 150 A | 8.3 mOhms | 20 V | 4 V | 49 nC | - 55 C | + 175 C | 217 W | Enhancement | Reel | |||||
Mfr: RUE002N02TL TTI: RUE002N02TL ROHM Semiconductor Availability: 96,000In StockMOSFETs Sm Signal, Sw MOSFET N Chan, 20V, 0.2A | 96,000In Stock | Si | SMD/SMT | SOT-416-3 | N-Channel | 1 Channel | 20 V | 200 mA | 1.2 Ohms | 8 V | 1 V | + 150 C | 150 mW | Enhancement | Reel | RUE002N02 | ||||||
Mfr: RS7E200BGTB1 TTI: RS7E200BGTB1 ROHM Semiconductor Availability: 10In StockMOSFETs DFN5060 N-CH 30V 390A | 10In Stock | Si | SMD/SMT | DFN5060-8S | N-Channel | 1 Channel | 30 V | 390 A | 670 uOhms | 20 V | 2.5 V | 135 nC | - 55 C | + 150 C | 180 W | Enhancement | Reel | |||||
Mfr: RS7N160BHTB1 TTI: RS7N160BHTB1 ROHM Semiconductor Availability: 10In StockMOSFETs DFN5060 N-CH 80V 160A | 10In Stock | Si | SMD/SMT | DFN5060-8S | N-Channel | 1 Channel | 80 V | 160 A | 2.6 mOhms | 20 V | 4 V | 73 nC | - 55 C | + 150 C | 160 W | Enhancement | Reel | |||||
Mfr: IRFU014PBF TTI: IRFU014PBF Vishay / Siliconix Availability: 6,000In StockMOSFETs N-Chan 60V 7.7 Amp | 6,000In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 60 V | 7.7 A | 200 mOhms | 20 V | 2 V | 11 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | |||||
Mfr: SI4156DY-T1-GE3 TTI: SI4156DY-T1-GE3 Vishay Semiconductors Availability: 5,000In StockMOSFETs 30V Vds 20V Vgs SO-8 | 5,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 24 A | 6 mOhms | 20 V | 1.15 V | 42 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4156DY-GE3 | |||
Mfr: SIHA100N60E-GE3 TTI: SIHA100N60E-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs 600V Vds; +/-30V Vgs Thin-Lead TO-220 | 2,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 30 A | 100 mOhms | 30 V | 3 V | 50 nC | - 55 C | + 150 C | 35 W | Enhancement | Reel | |||||
Mfr: SIHB21N80AE-GE3 TTI: SIHB21N80AE-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO263 800V 17.4A N-CH MOSFET | 2,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 17.4 A | 205 mOhms | 30 V | 4 V | 48 nC | - 55 C | + 155 C | 32 W | Enhancement | Reel | |||||
Mfr: SIHA24N80AE-GE3 TTI: SIHA24N80AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs N-CHANNEL 800V E Series Pwr MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 9 A | 184 mOhms | 30 V | 4 V | 59 nC | - 55 C | + 150 C | 35 W | Enhancement | Reel | |||||
Mfr: SIHP080N60E-GE3 TTI: SIHP080N60E-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO220 600V 35A N-CH MOSFET | 2,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 35 A | 80 mOhms | 30 V | 5 V | 42 nC | - 55 C | + 150 C | 227 W | Enhancement | Bulk | |||||
Mfr: SIR5802DP-T1-RE3 TTI: SIR5802DP-T1-RE3 Vishay Availability: 9,000In StockMOSFETs PPAKSO8 N-CH 80V 33.6A | 9,000In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 80 V | 137.5 A | 2.9 mOhms | 10 V | 4 V | 28 nC | - 55 C | + 150 C | PowerPAK | Reel |