Si - MOSFETs
17,639 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: TK8R2A06PL,S4X TTI: TK8R2A06PL,S4X Toshiba Availability: 1,100In StockMOSFETs N-Ch 60V 1990pF 29nC 50A 34W | 1,100In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 50 A | 6.1 mOhms | 20 V | 1.5 V | 28.3 nC | - 55 C | + 175 C | 36 W | Enhancement | U-MOSIX-H | Tube | ||||
Mfr: SIR606DP-T1-GE3 TTI: SIR606DP-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 37 A | 16.2 mOhms | 20 V | 2.4 V | 36.5 nC | - 55 C | + 150 C | 44.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: BSS670AHZGT116 TTI: BSS670AHZGT116 ROHM Semiconductor Availability: 21,000In StockMOSFETs SOT23 N-CH 60V .65A | 21,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 650 mA | 680 mOhms | 20 V | 2 V | - 55 C | + 150 C | 350 mW | Enhancement | Reel | ||||||
650In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 800 mA | 4.6 Ohms | 20 V | 4.5 V | 12.7 nC | - 55 C | + 150 C | 60 W | Depletion | Tube | ||||||
140In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 1.6 A | 2.3 Ohms | 20 V | 4.5 V | 23.7 nC | - 55 C | + 150 C | 100 W | Depletion | Tube | ||||||
Mfr: IRFB11N50APBF-BE3 TTI: IRFB11N50APBF-BE3 Vishay / Siliconix Availability: 2,650In StockMOSFETs TO220 500V 11A N-CH MOSFET | 2,650In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 11 A | 520 mOhms | 30 V | 4 V | 52 nC | - 55 C | + 150 C | 170 W | Enhancement | Tube | IRFB11N50APBF | ||||
750In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 8.1 A | 450 mOhms | 20 V | 2 V | 41 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | ||||||
Mfr: SI9407BDY-T1-E3 TTI: SI9407BDY-T1-E3 Vishay Semiconductors Availability: 2,500In StockMOSFETs -60V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 60 V | 4.7 A | 100 mOhms | 20 V | 1 V | 14.5 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI9407BDY-E3 | |||
Mfr: IRFI9640GPBF TTI: IRFI9640GPBF Vishay Semiconductors Availability: 700In StockMOSFETs TO220 200V 6.1A P-CH MOSFET | 700In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 6.1 A | 500 mOhms | 20 V | 4 V | 44 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
Mfr: IRFPC60LCPBF TTI: IRFPC60LCPBF Vishay Semiconductors Availability: 425In StockMOSFETs TO247 600V 16A N-CH MOSFET | 425In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 16 A | 400 mOhms | 30 V | 2 V | 120 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: IRFP9240PBF TTI: IRFP9240PBF Vishay Semiconductors Availability: 225In StockMOSFETs TO247 200V 12A P-CH MOSFET | 225In Stock | Si | Through Hole | TO-247AC-3 | P-Channel | 1 Channel | 200 V | 12 A | 500 mOhms | 20 V | 2 V | 44 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | |||||
Mfr: SIA432DJ-T1-GE3 TTI: SIA432DJ-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SC-70 | 6,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 30 V | 12 A | 20 mOhms | 20 V | 1 V | 20 nC | - 55 C | + 150 C | 19.2 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA432DJ-GE3 | |||
Mfr: RHP020N06T100 TTI: RHP020N06T100 ROHM Semiconductor Availability: 6,000In StockMOSFETs N-CH 60V 200MA | 6,000In Stock | Si | SMD/SMT | SOT-89-3 | N-Channel | 1 Channel | 60 V | 2 A | 200 mOhms | 20 V | 2.5 V | 7 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | RHP020N06 | ||||
250In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 300 mOhms | 30 V | 2.5 V | 17.7 nC | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIHP28N60EF-GE3 TTI: SIHP28N60EF-GE3 Vishay / Siliconix Availability: 8,050In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 8,050In Stock | Si | Through Hole | TO-220-3 | Tube | |||||||||||||||||
50In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 76 A | 25 mOhms | 15 V | 2 V | 197 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | |||||
100In Stock | Si | Through Hole | TO-264-3 | P-Channel | 1 Channel | 600 V | 32 A | 350 mOhms | 20 V | 4 V | 196 nC | - 55 C | + 150 C | 890 W | Enhancement | PolarP | Tube | |||||
Mfr: SIHB6N65E-GE3 TTI: SIHB6N65E-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 650V Vds 30V Vgs D2PAK (TO-263) | 1,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 7 A | 600 mOhms | 30 V | 4 V | 24 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | |||||
Mfr: SIRA12DP-T1-GE3 TTI: SIRA12DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V 4.3mOhm@10V 25A N-Ch G-IV | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 3.2 mOhms | - 16 V, 20 V | 1.1 V | 45 nC | - 55 C | + 150 C | 31 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA12DP-GE3 | |||
Mfr: SI2306BDS-T1-BE3 TTI: SI2306BDS-T1-BE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs SOT23 N-CH 30V 3.16A | 12,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.16 A | 47 mOhms | 20 V | 3 V | 3 nC | - 55 C | + 150 C | 750 mW | Enhancement | Reel | SI2306BDS-T1-E3 | ||||
Mfr: PSMN6R0-30YLB,115 TTI: PSMN6R0-30YLB,115 Nexperia Availability: 12,000In StockMOSFETs PSMN6R0-30YLB/SOT669/LFPAK | 12,000In Stock | Si | SMD/SMT | SOT-669-5 | N-Channel | 1 Channel | 30 V | 71 A | 6.9 mOhms | 20 V | 1.95 V | 19 nC | - 55 C | + 175 C | 58 W | Enhancement | Reel | 934066006115 | ||||
Mfr: SIR873DP-T1-GE3 TTI: SIR873DP-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -150V Vds 20V Vgs PowerPAK SO-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 150 V | 37 A | 39.5 mOhms | 20 V | 4 V | 25 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: RSQ035N06HZGTR TTI: RSQ035N06HZGTR ROHM Semiconductor Availability: 12,000In StockMOSFETs SOT457 N-CH 60V 3.5A | 12,000In Stock | Si | SMD/SMT | SOT-457T-6 | N-Channel | 1 Channel | 60 V | 3.5 A | 70 mOhms | 20 V | 3 V | 6.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | AEC-Q101 | Reel | RSQ035N06HZG | |||
Mfr: SIHD12N50E-GE3 TTI: SIHD12N50E-GE3 Vishay / Siliconix Availability: 2,550In StockMOSFETs 500V Vds 30V Vgs DPAK (TO-252) | 2,550In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 10.5 A | 380 mOhms | 30 V | 4 V | 25 nC | - 55 C | + 150 C | 114 W | Enhancement | Tube | |||||
Mfr: SI8424CDB-T1-E1 TTI: SI8424CDB-T1-E1 Vishay Semiconductors Availability: 3,000In StockMOSFETs 8V Vds 5V Vgs MICRO FOOT 1.6 x 1.6 | 3,000In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 8 V | 10 A | 20 mOhms | 5 V | 350 mV | 40 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel |