MOSFETs
18,702 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRFBF20SPBF TTI: IRFBF20SPBF Vishay Semiconductors Availability: 200In StockMOSFETs TO263 900V 1.7A N-CH MOSFET | 200In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 900 V | 1.7 A | 8 Ohms | - 20 V, 20 V | 2 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Tube | |||||
Mfr: SIRA06DP-T1-GE3 TTI: SIRA06DP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 2.05 mOhms | - 16 V, 20 V | 1.1 V | 77 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA06DP-GE3 | |||
Mfr: SIHB22N60E-GE3 TTI: SIHB22N60E-GE3 Vishay Semiconductors Availability: 60In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 60In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 21 A | 180 mOhms | - 30 V, 30 V | 4 V | 57 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | |||||
Mfr: SI4186DY-T1-GE3 TTI: SI4186DY-T1-GE3 Vishay Semiconductors Availability: 5,000In StockMOSFETs 20V Vds 20V Vgs SO-8 | 5,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 20 V | 35.8 A | 2.6 mOhms | - 20 V, 20 V | 1.2 V | 90 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4186DY-GE3 | |||
Mfr: IRFR120TRPBF TTI: IRFR120TRPBF Vishay Semiconductors Availability: 2,000In StockMOSFETs TO252 100V 7.7A N-CH MOSFET | 2,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 7.7 A | 270 mOhms | - 20 V, 20 V | 2 V | 16 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR120TRPBF-BE3 | ||||
Mfr: SIA471DJ-T1-GE3 TTI: SIA471DJ-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs Pch 30V Vds 20V Vgs PowerPAK SC-70-6L | 3,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 30 V | 30.3 A | 11.5 mOhms | - 20 V, 16 V | 2.5 V | 18.5 nC | - 55 C | + 150 C | 19.2 W | Enhancement | Reel | |||||
Mfr: SUM70060E-GE3 TTI: SUM70060E-GE3 Vishay Semiconductors Availability: 3,200In StockMOSFETs 100V Vds 20V Vgs D2PAK (TO-263) | 3,200In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 131 A | 5.6 mOhms | - 20 V, 20 V | 4 V | 81 nC | - 55 C | + 175 C | 375 W | Enhancement | ThunderFET | Reel | ||||
Mfr: IRF9620PBF-BE3 TTI: IRF9620PBF-BE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 200V 3.5A P-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 3.5 A | 1.5 Ohms | - 20 V, 20 V | 4 V | 22 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | IRF9620PBF | ||||
Mfr: IRFR024PBF TTI: IRFR024PBF Vishay Semiconductors Availability: 900In StockMOSFETs TO252 N-CH 60V 14A | 900In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 14 A | 100 mOhms | - 20 V, 20 V | 2 V | 25 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: SIRA18ADP-T1-GE3 TTI: SIRA18ADP-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 18,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 30.6 A | 8.7 mOhms | - 16 V, 20 V | 1.2 V | 21.5 nC | - 55 C | + 150 C | 14.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIA440DJ-T1-GE3 TTI: SIA440DJ-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 40V Vds 12V Vgs PowerPAK SC-70 | 3,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 40 V | 12 A | 26 mOhms | - 12 V, 12 V | 600 mV | 21.5 nC | - 50 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
150In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 85 V | 24 A | 65 mOhms | - 15 V, 15 V | 4.5 V | 41 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchP | Tube | |||||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 30 A | 240 mOhms | - 20 V, 20 V | 2.5 V | 335 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | |||||
60In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.7 kV | 2 A | 6.5 Ohms | - 20 V, 20 V | 4.5 V | 110 nC | - 55 C | + 150 C | 568 W | Enhancement | Tube | ||||||
Mfr: RVQ040N05TR TTI: RVQ040N05TR ROHM Semiconductor Availability: 6,000In StockMOSFETs Med Pwr, Sw MOSFET N Chan, 45V, 4A | 6,000In Stock | Si | SMD/SMT | SOT-457T-6 | N-Channel | 1 Channel | 45 V | 4 A | 53 mOhms | - 21 V, 21 V | 2.5 V | 6.3 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | RVQ040N05 | ||||
Mfr: SI1480DH-T1-GE3 TTI: SI1480DH-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 100V Vds 20V Vgs SC70-6 | 3,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 100 V | 2.6 A | 200 mOhms | - 20 V, 20 V | 3 V | 5 nC | - 55 C | + 150 C | 2.8 W | Enhancement | TrenchFET | Reel | SI1480DH-T1-BE3 | |||
Mfr: SI7431DP-T1-E3 TTI: SI7431DP-T1-E3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -200V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 200 V | 3.8 A | 174 mOhms | - 20 V, 20 V | 4 V | 135 nC | - 55 C | + 150 C | 5.4 W | Enhancement | TrenchFET | Reel | SI7431DP-E3 | |||
Mfr: TPH1R306P1,L1Q TTI: TPH1R306P1,L1Q Toshiba Availability: 5,000In Stock5,000 On Order Expected 15-Oct-26 MOSFETs SOP8-ADV PD=170W 1MHz PWR MOSFET TRNS | 5,000In Stock5,000 On Order Expected 15-Oct-26 | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V | 100 A | 2.3 mOhms | - 20 V, 20 V | 2.5 V | 91 nC | - 55 C | + 175 C | 170 W | Enhancement | U-MOSIX-H | Reel | ||||
Mfr: IRF820PBF-BE3 TTI: IRF820PBF-BE3 Vishay / Siliconix Availability: 30,000In StockMOSFETs TO220 500V 2.5A N-CH MOSFET | 30,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 2.5 A | 3 Ohms | - 20 V, 20 V | 4 V | 24 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | IRF820PBF | ||||
Mfr: IXFH60N65X2 TTI: IXFH60N65X2 IXYS Availability: 180In StockMOSFETs MOSFET 650V/60A Ultra Junction X2 | 180In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 60 A | 52 mOhms | - 30 V, 30 V | 2.7 V | 107 nC | - 55 C | + 150 C | 780 W | Enhancement | HiPerFET | Tube | ||||
Mfr: SIR870BDP-T1-RE3 TTI: SIR870BDP-T1-RE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs N-CHANNEL 100 V | 3,000In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 100 V | 81 A | 6.1 mOhms | - 20 V, 20 V | 3 V | 73 nC | - 55 C | + 150 C | 100 W | Enhancement | PowerPAK | Reel | |||||
630In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1.2 kV | 1.4 A | 15 Ohms | - 30 V, 30 V | 4.5 V | 24.8 nC | - 55 C | + 150 C | 86 W | Enhancement | Tube | ||||||
Mfr: TN2404K-T1-GE3 TTI: TN2404K-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 240V 0.2A 0.36W 4.0ohms @ 10V | 6,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 257 V | 200 mA | 2.2 Ohms | - 20 V, 20 V | 1.65 V | 4.87 nC | - 55 C | + 150 C | 360 mW | Enhancement | TrenchFET | Reel | TN2404K-GE3 | |||
Mfr: SI7619DN-T1-GE3 TTI: SI7619DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 24 A | 21 mOhms | - 25 V, 25 V | 1 V | 32 nC | - 55 C | + 150 C | 27.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7141DP-T1-GE3 TTI: SI7141DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -20V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 20 V | 60 A | 1.9 mOhms | - 20 V, 20 V | 2.3 V | 265 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | SI7141DP-GE3 |