MOSFETs
18,590 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRFBC40STRLPBF TTI: IRFBC40STRLPBF Vishay Semiconductors Availability: 800In Stock1,600 On Order Expected 07-Jul-26 MOSFETs N-Chan 600V 6.2 Amp | 800In Stock1,600 On Order Expected 07-Jul-26 | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | - 30 V, 30 V | 2 V | 60 nC | - 55 C | + 150 C | 130 W | Enhancement | Reel | |||||
Mfr: RUF015N02TL TTI: RUF015N02TL ROHM Semiconductor Availability: 69,000In StockMOSFETs Med Pwr, Sw MOSFET P Chan, 20V, 1.5A | 69,000In Stock | Si | SMD/SMT | SOT-323-3 | N-Channel | 1 Channel | 20 V | 1.5 A | 180 mOhms | - 10 V, 10 V | 1 V | 1.8 nC | - 55 C | + 150 C | 800 mW | Enhancement | Reel | RUF015N02 | ||||
Mfr: SI7148DP-T1-E3 TTI: SI7148DP-T1-E3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 75V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 75 V | 28 A | 11 mOhms | - 20 V, 20 V | 2.5 V | 68 nC | - 55 C | + 150 C | 96 W | Enhancement | TrenchFET | Reel | SI7148DP-E3 | |||
6,000In Stock | Si | SMD/SMT | TSSOP-6 | N-Channel | 2 Channel | 20 V | 860 mA | 350 mOhms | - 12 V, 12 V | 500 mV | 720 pC | - 55 C | + 150 C | 410 mW | Enhancement | Reel | 934057731115 | |||||
Mfr: SI8483DB-T2-E1 TTI: SI8483DB-T2-E1 Vishay Semiconductors Availability: 42,000In StockMOSFETs -12V Vds 10V Vgs MICRO FOOT 1.5 x 1 | 42,000In Stock | Si | SMD/SMT | MicroFoot-6 | P-Channel | 1 Channel | 12 V | 16 A | 22 mOhms | - 10 V, 10 V | 800 mV | 65 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR882ADP-T1-GE3 TTI: SIR882ADP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 60 A | 7.2 mOhms | - 20 V, 20 V | 1.2 V | 60 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR882ADP-GE3 | |||
Mfr: RTR030P02HZGTL TTI: RTR030P02HZGTL ROHM Semiconductor Availability: 9,000In Stock15,000 On Order Expected MOSFETs SOT346 P-CH 20V 3A | 9,000In Stock15,000 On Order Expected | Si | SMD/SMT | SOT-346T-3 | P-Channel | 1 Channel | 20 V | 3 A | 75 mOhms | - 12 V, 12 V | 2 V | 9.3 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | Reel | RTR030P02HZG | |||
Mfr: IRFBF30PBF-BE3 TTI: IRFBF30PBF-BE3 Vishay / Siliconix Availability: 950In StockMOSFETs TO220 900V 3.6A N-CH MOSFET | 950In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 900 V | 3.6 A | 3.7 Ohms | - 20 V, 20 V | 4 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBF30PBF | ||||
Mfr: SI1401EDH-T1-BE3 TTI: SI1401EDH-T1-BE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs SOT363 P-CH 12V 4A | 9,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 12 V | 4 A | 34 mOhms | - 10 V, 10 V | 1 V | 36 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI1401EDH-T1-GE3 | |||
Mfr: SI1416EDH-T1-BE3 TTI: SI1416EDH-T1-BE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs SOT363 N-CH 30V 3.9A | 3,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 30 V | 3.9 A | 58 mOhms | - 12 V, 12 V | 1.4 V | 12 nC | - 55 C | + 150 C | 1.56 W | Enhancement | TrenchFET | Reel | SI1416EDH-T1-GE3 | |||
Mfr: SI7106DN-T1-E3 TTI: SI7106DN-T1-E3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 20V Vds 12V Vgs PowerPAK 1212-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 19.5 A | 6.2 mOhms | - 12 V, 12 V | 1.5 V | 17.5 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7106DN-E3 | |||
Mfr: IRF9630PBF TTI: IRF9630PBF Vishay Semiconductors Availability: 150In Stock1,000 On Order Expected 10-Jun-27 MOSFETs TO220 200V 6.5A P-CH MOSFET | 150In Stock1,000 On Order Expected 10-Jun-27 | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 6.5 A | 800 mOhms | - 20 V, 20 V | 4 V | 29 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF9630PBF-BE3 | ||||
Mfr: IRFR9310PBF TTI: IRFR9310PBF Vishay Semiconductors Availability: 2,025In StockMOSFETs P-Chan 400V 1.8 Amp | 2,025In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 400 V | 1.8 A | 7 Ohms | - 20 V, 20 V | 4 V | 13 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | |||||
Mfr: IRFPG30PBF TTI: IRFPG30PBF Vishay Semiconductors Availability: 350In StockMOSFETs TO247 1KV 3.1A N-CH MOSFET | 350In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 3.1 A | 5 Ohms | - 20 V, 20 V | 2 V | 80 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: SIA537EDJ-T1-GE3 TTI: SIA537EDJ-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs -20V Vds 8V Vgs PowerPAK SC-70 | 3,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel, P-Channel | 2 Channel | 12 V, 20 V | 4.5 A | 23 mOhms, 44 mOhms | - 8 V, 8 V | 400 mV | 16 nC, 25 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7143DP-T1-GE3 TTI: SI7143DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 35 A | 10 mOhms | - 20 V, 20 V | 2.8 V | 47.5 nC | - 55 C | + 150 C | 35.7 W | Enhancement | TrenchFET | Reel | SI7143DP-GE3 | |||
Mfr: SISA18ADN-T1-GE3 TTI: SISA18ADN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 38.3 A | 6 mOhms | - 16 V, 20 V | 1.2 V | 21.5 nC | - 55 C | + 150 C | 19.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIRA18DP-T1-GE3 TTI: SIRA18DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 33 A | 6 mOhms | - 16 V, 20 V | 1.2 V | 21.5 nC | - 55 C | + 150 C | 14.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR470DP-T1-GE3 TTI: SIR470DP-T1-GE3 Vishay Semiconductors Availability: 48,000In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 48,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 60 A | 1.9 mOhms | - 20 V, 20 V | 1 V | 155 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR814DP-T1-GE3 | |||
Mfr: SISA04DN-T1-GE3 TTI: SISA04DN-T1-GE3 Vishay Semiconductors Availability: 30,000In StockMOSFETs For New Design See: 78-SISHA04DN-T1-GE3 | 30,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 40 A | 1.8 mOhms | - 16 V, 20 V | 1.1 V | 77 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SISA04DN-GE3 | |||
Mfr: SIHP30N60E-GE3 TTI: SIHP30N60E-GE3 Vishay / Siliconix Availability: 4,000In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 4,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 29 A | 125 mOhms | - 30 V, 30 V | 2.8 V | 85 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: SI4178DY-T1-GE3 TTI: SI4178DY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 30V Vds 25V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 12 A | 21 mOhms | - 20 V, 20 V | 1.4 V | 7.5 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4178DY-GE3 | |||
Mfr: SI4842BDY-T1-E3 TTI: SI4842BDY-T1-E3 Vishay Semiconductors Availability: 15,000In StockMOSFETs 30V 23A 3.5W | 15,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 28 A | 4.2 mOhms | - 20 V, 20 V | 1.4 V | 100 nC | - 55 C | + 150 C | 6.25 W | Enhancement | TrenchFET | Reel | SI4842BDY-E3 | |||
Mfr: SUM70030E-GE3 TTI: SUM70030E-GE3 Vishay Semiconductors Availability: 800In StockMOSFETs 100V Vds; 20V Vgs TO-263 | 800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 150 A | 2.88 mOhms | - 20 V, 20 V | 2 V | 214 nC | - 55 C | + 175 C | 375 W | Enhancement | Reel | |||||
Mfr: SI2306BDS-T1-E3 TTI: SI2306BDS-T1-E3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V 4.0A 0.75W | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.16 A | 47 mOhms | - 20 V, 20 V | 1 V | 3 nC | - 55 C | + 150 C | 750 mW | Enhancement | TrenchFET | Reel | SI2306BDS-T1-BE3 SI2306BDS-E3 |
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