N-Channel - MOSFETs
8,177 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIS184LDN-T1-GE3 TTI: SIS184LDN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs PPAK1212 N-CH 60V 18.7A | 6,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | 20 V | 3 V | - 55 C | + 175 C | Enhancement | Reel | |||||||||
Mfr: SIHP15N50E-GE3 TTI: SIHP15N50E-GE3 Vishay Semiconductors Availability: 3,350In StockMOSFETs 500V Vds 30V Vgs TO-220AB | 3,350In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 14.5 A | 243 mOhms | 30 V | 4 V | 33 nC | - 55 C | + 150 C | 156 W | Enhancement | Tube | SIHP15N50E-BE3 | ||||
Mfr: PSMN8R3-40YS,115 TTI: PSMN8R3-40YS,115 Nexperia Availability: 1,500In StockMOSFETs PSMN8R3-40YS/SOT669/LFPAK | 1,500In Stock | Si | SMD/SMT | SOT-669-5 | N-Channel | 1 Channel | 40 V | 70 A | 8.3 mOhms | 20 V | 2 V | 20 nC | - 55 C | + 175 C | 74 W | Enhancement | Reel | 934063936115 | ||||
Mfr: TK5A80E,S4X TTI: TK5A80E,S4X Toshiba Availability: 158,300In StockMOSFETs TO220 800V 5A N-CH MOSFET | 158,300In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 800 V | 5 A | 2.4 Ohms | 30 V | 2.5 V | 20 nC | - 55 C | + 150 C | 40 W | Enhancement | MOSVII | Tube | ||||
Mfr: SI2302CDS-T1-E3 TTI: SI2302CDS-T1-E3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 20V Vds 8V Vgs SOT-23 | 6,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.6 A | 57 mOhms | 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 710 mW | Enhancement | TrenchFET | Reel | SI2302CDS-T1-BE3 SI2302CDS-E3 | |||
250In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 160 A | 19 mOhms | 20 V | 5 V | 335 nC | - 55 C | + 150 C | 1.39 kW | Enhancement | HiPerFET | Tube | |||||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 6 A | 2.2 Ohms | 20 V | 2.5 V | 95 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | ||||||
Mfr: SSM3K345R,LF TTI: SSM3K345R,LF Toshiba Availability: 78,000In StockMOSFETs LowON Res MOSFET ID=4A VDSS=20V | 78,000In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 20 V | 4 A | 25 mOhms | 8 V | 400 mV | 3.6 nC | - 55 C | + 150 C | 2 W | Enhancement | U-MOSVI | Reel | ||||
Mfr: IRFS9N60ATRLPBF TTI: IRFS9N60ATRLPBF Vishay Semiconductors Availability: 1,600In StockMOSFETs TO263 600V 9.2A N-CH MOSFET | 1,600In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 9.2 A | 750 mOhms | 30 V | 2 V | 49 nC | - 55 C | + 150 C | 170 W | Enhancement | Reel | |||||
Mfr: SIR836DP-T1-GE3 TTI: SIR836DP-T1-GE3 Vishay Semiconductors Availability: 21,000In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 21,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 21 A | 19 mOhms | 20 V | 1.2 V | 11.8 nC | - 55 C | + 150 C | 15.6 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR836DP-GE3 | |||
Mfr: SIHG052N60EF-GE3 TTI: SIHG052N60EF-GE3 Vishay / Siliconix Availability: 1,950In StockMOSFETs EF Series Pwr MOSFET w/Fast Body Diode | 1,950In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 48 A | 52 mOhms | 30 V | 5 V | 67 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | ||||||
Mfr: SIA906EDJ-T1-GE3 TTI: SIA906EDJ-T1-GE3 Vishay Semiconductors Availability: 21,000In StockMOSFETs 20V Vds 12V Vgs PowerPAK SC-70 | 21,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 2 Channel | 20 V | 4.5 A | 46 mOhms | 8 V | 600 mV | 950 pC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA906EDJ-GE3 | |||
90In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 100 V | 140 A | 11 mOhms | 20 V | 5 V | 155 nC | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | |||||
Mfr: IRFP048PBF TTI: IRFP048PBF Vishay Semiconductors Availability: 475In StockMOSFETs TO247 N-CH 60V 70A | 475In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 60 V | 70 A | 18 mOhms | 20 V | 4 V | 110 nC | - 55 C | + 175 C | 190 W | Enhancement | Tube | |||||
Mfr: SI7106DN-T1-GE3 TTI: SI7106DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 20V Vds 12V Vgs PowerPAK 1212-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 19.5 A | 6.2 mOhms | 12 V | 1.5 V | 17.5 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7106DN-GE3 | |||
Mfr: SI2338DS-T1-BE3 TTI: SI2338DS-T1-BE3 Vishay / Siliconix Availability: 21,000In StockMOSFETs SOT23 N-CH 30V 5.5A | 21,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 6 A | 28 mOhms | 20 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2338DS-T1-GE3 | ||||
250In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 36 A | 45 mOhms | 20 V | 2.5 V | 21 nC | - 55 C | + 150 C | 170 W | Enhancement | HiPerFET | Tube | |||||
Mfr: IRF740APBF-BE3 TTI: IRF740APBF-BE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 400V 10A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | 30 V | 4 V | 36 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF740APBF | ||||
Mfr: SIS888DN-T1-GE3 TTI: SIS888DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 150V Vds 20V Vgs PowerPAK 1212-8S | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 150 V | 20.2 A | 58 mOhms | 20 V | 3 V | 14.5 nC | - 55 C | + 150 C | 52 W | Enhancement | ThunderFET | Reel | ||||
180In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 2 A | 15 Ohms | 30 V | 6 V | 72 nC | - 55 C | + 150 C | 290 W | Enhancement | Linear | Tube | |||||
Mfr: SISS26DN-T1-GE3 TTI: SISS26DN-T1-GE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs 60V Vds 20V Vgs PowerPAK 1212-8S | 12,000In Stock | Si | SMD/SMT | PowerPAK-1212-8S-8 | N-Channel | 1 Channel | 60 V | 60 A | 3.7 mOhms | 20 V | 3.6 V | 24.5 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
650In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 17 A | 100 mOhms | 20 V | 4 V | 25 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | IRFZ24PBF-BE3 | |||||
Mfr: SIRA10DP-T1-GE3 TTI: SIRA10DP-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 2.8 mOhms | - 16 V, 20 V | 1.1 V | 51 nC | - 55 C | + 150 C | 40 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA10DP-GE3 | |||
Mfr: IRFBF20SPBF TTI: IRFBF20SPBF Vishay Semiconductors Availability: 150In StockMOSFETs TO263 900V 1.7A N-CH MOSFET | 150In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 900 V | 1.7 A | 8 Ohms | 20 V | 2 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Tube | |||||
Mfr: SI5442DU-T1-GE3 TTI: SI5442DU-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 20V Vds 8V Vgs PowerPAK ChipFET | 3,000In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel | 1 Channel | 20 V | 25 A | 10 mOhms | 8 V | 400 mV | 45 nC | - 55 C | + 150 C | 31 W | Enhancement | TrenchFET | Reel |