SMD - MOSFETs
5,434 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI7119DN-T1-GE3 TTI: SI7119DN-T1-GE3 Vishay Semiconductors Availability: 24,000In StockMOSFETs -200V Vds 20V Vgs PowerPAK 1212-8 | 24,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 200 V | 3.8 A | 1.05 Ohms | - 20 V, 20 V | 4 V | 16.2 nC | - 50 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7119DN-GE3 | |||
Mfr: SI7148DP-T1-E3 TTI: SI7148DP-T1-E3 Vishay Semiconductors Availability: 15,000In StockMOSFETs 75V Vds 20V Vgs PowerPAK SO-8 | 15,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 75 V | 28 A | 11 mOhms | - 20 V, 20 V | 2.5 V | 68 nC | - 55 C | + 150 C | 96 W | Enhancement | TrenchFET | Reel | SI7148DP-E3 | |||
3,000In Stock | Si | SMD/SMT | SOT-363T-6 | N-Channel, P-Channel | 2 Channel | 20 V, 30 V | 1 A, 1.5 A | 240 mOhms, 390 mOhms | - 12 V, 12 V | 1.5 V, 2 V | 1.6 nC, 2.1 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | US6M2 | |||||
Mfr: SIRA18DP-T1-GE3 TTI: SIRA18DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 33 A | 6 mOhms | - 16 V, 20 V | 1.2 V | 21.5 nC | - 55 C | + 150 C | 14.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR870ADP-T1-GE3 TTI: SIR870ADP-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 60 A | 5.5 mOhms | - 20 V, 20 V | 1.5 V | 80 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR870ADP-GE3 | |||
820In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 600 mA | 34 Ohms | - 20 V, 20 V | 2 V | 13.3 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | ||||||
Mfr: SI7106DN-T1-GE3 TTI: SI7106DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 20V Vds 12V Vgs PowerPAK 1212-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 19.5 A | 6.2 mOhms | - 12 V, 12 V | 1.5 V | 17.5 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7106DN-GE3 | |||
Mfr: SI7629DN-T1-GE3 TTI: SI7629DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 20V 35A 52W | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 3.8 mOhms | - 12 V, 12 V | 1.5 V | 177 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7629DN-GE3 | |||
Mfr: RTL035N03TR TTI: RTL035N03TR ROHM Semiconductor Availability: 27,000In StockMOSFETs N-CH 30V 3.5A TUMT6 | 27,000In Stock | Si | SMD/SMT | SOT-363T-6 | N-Channel | 1 Channel | 30 V | 3.5 A | 56 mOhms | - 12 V, 12 V | 1.5 V | 4.6 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | RTL035N03 | ||||
500In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 500 V | 10 A | 1 Ohms | - 20 V, 20 V | 2 V | 50 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | ||||||
Mfr: IRFR9024PBF TTI: IRFR9024PBF Vishay Semiconductors Availability: 6,075In StockMOSFETs P-Chan 60V 8.8 Amp | 6,075In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 8.8 A | 280 mOhms | - 20 V, 20 V | 2 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | - 20 V, 20 V | 2.5 V | 42 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | ||||||
150In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 85 V | 96 A | 13 mOhms | - 15 V, 15 V | 2 V | 180 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | ||||||
Mfr: SIS890DN-T1-GE3 TTI: SIS890DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 30 A | 19.5 mOhms | - 20 V, 20 V | 1.5 V | 29 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SIS890DN-GE3 | |||
Mfr: SI7141DP-T1-GE3 TTI: SI7141DP-T1-GE3 Vishay Semiconductors Availability: 21,000In StockMOSFETs -20V Vds 20V Vgs PowerPAK SO-8 | 21,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 20 V | 60 A | 1.9 mOhms | - 20 V, 20 V | 2.3 V | 265 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | SI7141DP-GE3 | |||
Mfr: TN2404K-T1-GE3 TTI: TN2404K-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 240V 0.2A 0.36W 4.0ohms @ 10V | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 257 V | 200 mA | 2.2 Ohms | - 20 V, 20 V | 1.65 V | 4.87 nC | - 55 C | + 150 C | 360 mW | Enhancement | TrenchFET | Reel | TN2404K-GE3 | |||
Mfr: SIHB33N60E-GE3 TTI: SIHB33N60E-GE3 Vishay / Siliconix Availability: 3,350In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 3,350In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 33 A | 99 mOhms | - 30 V, 30 V | 4 V | 100 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | |||||
Mfr: SI4599DY-T1-GE3 TTI: SI4599DY-T1-GE3 Vishay Semiconductors Availability: 22,500In StockMOSFETs -40V Vds 20V Vgs SO-8 N&P PAIR | 22,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel, P-Channel | 2 Channel | 40 V | 5.8 A, 6.8 A | 35.5 mOhms, 45 mOhms | - 20 V, 20 V | 1.2 V, 1.4 V | 11.7 nC, 25 nC | - 55 C | + 150 C | 3 W, 3.1 W | Enhancement | TrenchFET | Reel | SI4599DY-GE3 | |||
Mfr: SISH892BDN-T1-GE3 TTI: SISH892BDN-T1-GE3 Vishay / Siliconix Availability: 21,000In StockMOSFETs PWRPK 100V 20A N-CH MOSFET | 21,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 20 A | 30.4 mOhms | - 20 V, 20 V | 2.4 V | 17.4 nC | - 55 C | + 150 C | 29 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IXFA6N120P TTI: IXFA6N120P IXYS Availability: 150In StockMOSFETs POLAR HIPERFET WITH REDUCED RDS 1200V 6A | 150In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 6 A | 2.75 Ohms | - 30 V, 30 V | 5 V | 92 nC | - 55 C | + 150 C | 250 W | Enhancement | HiPerFET | Tube | ||||
Mfr: SIA432DJ-T1-GE3 TTI: SIA432DJ-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SC-70 | 9,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 30 V | 12 A | 20 mOhms | - 20 V, 20 V | 1 V | 20 nC | - 55 C | + 150 C | 19.2 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA432DJ-GE3 | |||
Mfr: SIHD7N60E-GE3 TTI: SIHD7N60E-GE3 Vishay / Siliconix Availability: 2,950In StockMOSFETs 600V Vds 30V Vgs DPAK (TO-252) | 2,950In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 7 A | 600 mOhms | - 30 V, 30 V | 4 V | 20 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | |||||
Mfr: SSM3J355R,LF TTI: SSM3J355R,LF Toshiba Availability: 117,000In Stock39,000 On Order Expected MOSFETs LowON Res MOSFET ID=-6A VDSS=-20V | 117,000In Stock39,000 On Order Expected | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 6 A | 23 mOhms | - 10 V, 10 V | 1 V | 16.6 nC | - 55 C | + 150 C | 2 W | Enhancement | U-MOSVII | Reel | ||||
Mfr: SIRA06DP-T1-GE3 TTI: SIRA06DP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 2.05 mOhms | - 16 V, 20 V | 1.1 V | 77 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA06DP-GE3 | |||
Mfr: RZF030P01TL TTI: RZF030P01TL ROHM Semiconductor Availability: 21,000In StockMOSFETs Med Pwr, Sw MOSFET P Chan, -12V, 1.5A | 21,000In Stock | Si | SMD/SMT | SOT-323T-3 | P-Channel | 1 Channel | 12 V | 3 A | 39 mOhms | - 10 V, 10 V | 1 V | 18 nC | - 55 C | + 150 C | 800 mW | Enhancement | Reel | RZF030P01 |
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