MOSFETs
18,590 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIA929DJ-T1-GE3 TTI: SIA929DJ-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs -30V Vds 12V Vgs PowerPAK SC-70 | 9,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 30 V | 4.5 A | 52 mOhms, 52 mOhms | - 12 V, 12 V | 1.1 V | 21 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA929DJ-GE3 | |||
90In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 100 V | 140 A | 11 mOhms | - 20 V, 20 V | 5 V | 155 nC | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | |||||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 56 A | 27 mOhms | - 20 V, 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | |||||
250In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 36 A | 45 mOhms | - 20 V, 20 V | 2.5 V | 21 nC | - 55 C | + 150 C | 170 W | Enhancement | HiPerFET | Tube | |||||
Mfr: IRFZ44PBF-BE3 TTI: IRFZ44PBF-BE3 Vishay / Siliconix Availability: 2,300In StockMOSFETs TO220 N-CH 60V 50A | 2,300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | - 20 V, 20 V | 4 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRFZ44PBF | ||||
270In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1.5 kV | 1.83 A | 7.3 Ohms | - 30 V, 30 V | 2.5 V | - 55 C | + 150 C | 73 W | Tube | |||||||||
150In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 85 V | 96 A | 13 mOhms | - 15 V, 15 V | 2 V | 180 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | ||||||
Mfr: IRFS9N60ATRLPBF TTI: IRFS9N60ATRLPBF Vishay Semiconductors Availability: 800In StockMOSFETs TO263 600V 9.2A N-CH MOSFET | 800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 9.2 A | 750 mOhms | - 30 V, 30 V | 2 V | 49 nC | - 55 C | + 150 C | 170 W | Enhancement | Reel | |||||
450In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 160 A | 19 mOhms | - 20 V, 20 V | 5 V | 335 nC | - 55 C | + 150 C | 1.39 kW | Enhancement | HiPerFET | Tube | |||||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 52 A | 73 mOhms | - 20 V, 20 V | 5 V | 110 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIHG47N60E-GE3 TTI: SIHG47N60E-GE3 Vishay / Siliconix Availability: 8,000In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 8,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 64 mOhms | - 30 V, 30 V | 4 V | 148 nC | - 55 C | + 150 C | 357 W | Enhancement | Tube | |||||
Mfr: SI7157DP-T1-GE3 TTI: SI7157DP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds 12V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 20 V | 60 A | 2 mOhms | - 12 V, 12 V | 1.4 V | 415 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHP15N50E-GE3 TTI: SIHP15N50E-GE3 Vishay Semiconductors Availability: 3,500In StockMOSFETs 500V Vds 30V Vgs TO-220AB | 3,500In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 14.5 A | 243 mOhms | - 30 V, 30 V | 4 V | 33 nC | - 55 C | + 150 C | 156 W | Enhancement | Tube | SIHP15N50E-BE3 | ||||
180In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 2 A | 15 Ohms | - 30 V, 30 V | 6 V | 72 nC | - 55 C | + 150 C | 290 W | Enhancement | Linear | Tube | |||||
Mfr: SI7190ADP-T1-RE3 TTI: SI7190ADP-T1-RE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 250V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 250 V | 14.4 A | 102 mOhms | - 20 V, 20 V | 4 V | 14.9 nC | - 55 C | + 150 C | 56.8 W | Enhancement | Reel | |||||
Mfr: RSR025P03HZGTL TTI: RSR025P03HZGTL ROHM Semiconductor Availability: 234,000In Stock117,000 On Order Expected 22-Jul-26 MOSFETs SOT346 P-CH 30V 2.5A | 234,000In Stock117,000 On Order Expected 22-Jul-26 | Si | SMD/SMT | SC-96-3 | P-Channel | 1 Channel | 30 V | 2.5 A | 98 mOhms | - 20 V, 20 V | 2.5 V | 5.4 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | Reel | RSR025P03HZG | |||
Mfr: TK5A80E,S4X TTI: TK5A80E,S4X Toshiba Availability: 169,600In StockMOSFETs TO220 800V 5A N-CH MOSFET | 169,600In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 800 V | 5 A | 2.4 Ohms | - 30 V, 30 V | 2.5 V | 20 nC | - 55 C | + 150 C | 40 W | Enhancement | MOSVII | Tube | ||||
Mfr: MTI85W100GC-SMD TTI: MTI85W100GC-SMD IXYS Availability: 104In StockMOSFETs ISOPLUS 100V 120A 3-PH BRIDGE | 104In Stock | Si | SMD/SMT | ISOPLUS-DIL-17 | N-Channel | 6 Channel | 100 V | 120 A | 4 mOhms | - 15 V, 15 V | 2 V | 88 nC | - 55 C | + 150 C | Enhancement | Tube | ||||||
Mfr: SI2338DS-T1-BE3 TTI: SI2338DS-T1-BE3 Vishay / Siliconix Availability: 21,000In StockMOSFETs SOT23 N-CH 30V 5.5A | 21,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 6 A | 28 mOhms | - 20 V, 20 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2338DS-T1-GE3 | ||||
Mfr: IXTH260N055T2 TTI: IXTH260N055T2 IXYS Availability: 30In StockMOSFETs TRENCHT2 PWR MOSFET 55V 260A | 30In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 55 V | 260 A | 3.3 mOhms | - 20 V, 20 V | 2 V | 140 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IRFR9110TRPBF TTI: IRFR9110TRPBF Vishay Semiconductors Availability: 2,000In StockMOSFETs TO252 100V 3.1A P-CH MOSFET | 2,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 3.1 A | 1.2 Ohms | - 20 V, 20 V | 4 V | 8.7 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | |||||
Mfr: IRF740APBF-BE3 TTI: IRF740APBF-BE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 400V 10A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | - 30 V, 30 V | 4 V | 36 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF740APBF | ||||
Mfr: SIDR668ADP-T1-RE3 TTI: SIDR668ADP-T1-RE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs N-Channel 100 V (D-S) MOSFET, PowerPAK SO-8DC | 9,000In Stock | Si | SMD/SMT | SO-8DC | N-Channel | 1 Channel | 100 V | 104 A | 4.8 mOhms | - 20 V, 20 V | 4 V | 42 nC | - 55 C | + 150 C | 125 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: RZF030P01TL TTI: RZF030P01TL ROHM Semiconductor Availability: 15,000In StockMOSFETs Med Pwr, Sw MOSFET P Chan, -12V, 1.5A | 15,000In Stock | Si | SMD/SMT | SOT-323T-3 | P-Channel | 1 Channel | 12 V | 3 A | 39 mOhms | - 10 V, 10 V | 1 V | 18 nC | - 55 C | + 150 C | 800 mW | Enhancement | Reel | RZF030P01 | ||||
Mfr: SIHB22N60E-GE3 TTI: SIHB22N60E-GE3 Vishay Semiconductors Availability: 1,300In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 1,300In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 21 A | 180 mOhms | - 30 V, 30 V | 4 V | 57 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube |
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