N-Channel - MOSFETs
8,155 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: IRFR420TRLPBF TTI: IRFR420TRLPBF Vishay Semiconductors Availability: 27,000In StockMOSFETs TO252 500V 2.4A N-CH MOSFET | 27,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 2.4 A | 3 Ohms | 20 V | 4 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: IRFPE50PBF TTI: IRFPE50PBF Vishay Semiconductors Availability: 100In StockMOSFETs TO247 800V 7.8A N-CH MOSFET | 100In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 7.8 A | 1.2 Ohms | 20 V | 2 V | 200 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SIR470DP-T1-GE3 TTI: SIR470DP-T1-GE3 Vishay Semiconductors Availability: 48,000In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 48,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 60 A | 1.9 mOhms | 20 V | 1 V | 155 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR814DP-T1-GE3 | |||
Mfr: IRFP450LCPBF TTI: IRFP450LCPBF Vishay Semiconductors Availability: 250In StockMOSFETs TO247 500V 14A N-CH MOSFET | 250In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 14 A | 400 mOhms | 30 V | 2 V | 74 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: IRFU320PBF TTI: IRFU320PBF Vishay Semiconductors Availability: 525In StockMOSFETs N-Chan 400V 3.1 Amp | 525In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 400 V | 3.1 A | 1.8 Ohms | 20 V | 2 V | 20 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: SI7336ADP-T1-GE3 TTI: SI7336ADP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V 30A 5.4W 3.0mohm @ 10V | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 30 A | 3 mOhms | 20 V | 1 V | 36 nC | - 55 C | + 150 C | 5.4 W | Enhancement | TrenchFET | Reel | SI7336ADP-GE3 | |||
210In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | 20 V | 2.5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | Tube | ||||||
Mfr: SI2306BDS-T1-E3 TTI: SI2306BDS-T1-E3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V 4.0A 0.75W | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.16 A | 47 mOhms | 20 V | 1 V | 3 nC | - 55 C | + 150 C | 750 mW | Enhancement | TrenchFET | Reel | SI2306BDS-T1-BE3 SI2306BDS-E3 | |||
Mfr: SIR5108DP-T1-RE3 TTI: SIR5108DP-T1-RE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs SO8 100V 55.9A N CHAN | 12,000In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 100 V | 55.9 A | 10.5 mOhms | 20 V | 4 V | 14.8 nC | - 55 C | + 150 C | 65.7 W | Enhancement | Reel | |||||
Mfr: PMGD290XN,115 TTI: PMGD290XN,115 Nexperia Availability: 3,000In StockMOSFETs PMGD290XN/SOT363/SC-88 | 3,000In Stock | Si | SMD/SMT | TSSOP-6 | N-Channel | 2 Channel | 20 V | 860 mA | 350 mOhms | 12 V | 500 mV | 720 pC | - 55 C | + 150 C | 410 mW | Enhancement | Reel | 934057731115 | ||||
Mfr: IXFX64N50P TTI: IXFX64N50P IXYS Availability: 90In Stock60 On Order Expected 14-Jan-27 MOSFETs 64.0 Amps 500 V 0.09 Ohm Rds | 90In Stock60 On Order Expected 14-Jan-27 | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 500 V | 64 A | 85 mOhms | 30 V | 3 V | 150 nC | - 55 C | + 150 C | 830 W | Enhancement | HiPerFET | Tube | ||||
60In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 6 A | 3.5 Ohms | 20 V | 5 V | 67 nC | - 55 C | + 150 C | 540 W | Enhancement | Tube | ||||||
Mfr: SI7922DN-T1-GE3 TTI: SI7922DN-T1-GE3 Vishay Semiconductors Availability: 105,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 105,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 100 V | 2.5 A | 195 mOhms | 20 V | 3.5 V | 5.2 nC | - 55 C | + 150 C | 2.6 W | Enhancement | TrenchFET | Reel | SI7922DN-GE3 | |||
Mfr: IRFU110PBF TTI: IRFU110PBF Vishay Semiconductors Availability: 3,900In StockMOSFETs TO251 100V 4.3A N-CH MOSFET | 3,900In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 100 V | 4.3 A | 540 mOhms | 20 V | 2 V | 8.3 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
Mfr: SIRA18DP-T1-GE3 TTI: SIRA18DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 33 A | 6 mOhms | - 16 V, 20 V | 1.2 V | 21.5 nC | - 55 C | + 150 C | 14.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
90In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 3 A | 7.3 Ohms | 30 V | 2.5 V | 38.6 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | ||||||
Mfr: SIRA14DP-T1-GE3 TTI: SIRA14DP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 58 A | 4.25 mOhms | - 16 V, 20 V | 1.1 V | 29 nC | - 55 C | + 150 C | 31.2 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA14DP-GE3 | |||
Mfr: SISA04DN-T1-GE3 TTI: SISA04DN-T1-GE3 Vishay Semiconductors Availability: 30,000In StockMOSFETs For New Design See: 78-SISHA04DN-T1-GE3 | 30,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 40 A | 1.8 mOhms | - 16 V, 20 V | 1.1 V | 77 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SISA04DN-GE3 | |||
Mfr: SISA18ADN-T1-GE3 TTI: SISA18ADN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 38.3 A | 6 mOhms | - 16 V, 20 V | 1.2 V | 21.5 nC | - 55 C | + 150 C | 19.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR870ADP-T1-GE3 TTI: SIR870ADP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 60 A | 5.5 mOhms | 20 V | 1.5 V | 80 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR870ADP-GE3 | |||
Mfr: SSM3K56FS,LF TTI: SSM3K56FS,LF Toshiba Availability: 9,000In StockMOSFETs N-Ch U-MOSVI FET ID 0.8A 20VDSS 55pF | 9,000In Stock | Si | SMD/SMT | SOT-416-3 | N-Channel | 1 Channel | 20 V | 800 mA | 235 mOhms | 8 V | 400 mV | 1 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVII-H | Reel | ||||
Mfr: IRF740PBF-BE3 TTI: IRF740PBF-BE3 Vishay / Siliconix Availability: 7,000In StockMOSFETs TO220 400V 10A N-CH MOSFET | 7,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | 20 V | 4 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF740PBF | ||||
Mfr: SI7820DN-T1-E3 TTI: SI7820DN-T1-E3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 200V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 200 V | 1.7 A | 240 mOhms | 20 V | 2 V | 12.1 nC | - 55 C | + 150 C | 1.5 W | Enhancement | TrenchFET | Reel | SI7820DN-T1 | |||
Mfr: RYM002N05T2CL TTI: RYM002N05T2CL ROHM Semiconductor Availability: 8,000In StockMOSFETs .9V DRIVE N-Ch MOSFET | 8,000In Stock | Si | SMD/SMT | SOT-723-3 | N-Channel | 1 Channel | 50 V | 200 mA | 2.2 Ohms | 8 V | 800 mV | - 55 C | + 150 C | 150 mW | Enhancement | Reel | RYM002N05 | |||||
Mfr: IRFPG30PBF TTI: IRFPG30PBF Vishay Semiconductors Availability: 350In StockMOSFETs TO247 1KV 3.1A N-CH MOSFET | 350In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 3.1 A | 5 Ohms | 20 V | 2 V | 80 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube |