Si - MOSFETs
17,639 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SUP85N15-21-E3 TTI: SUP85N15-21-E3 Vishay Semiconductors Availability: 1,500In StockMOSFETs 150V 85A 300W 21mohm @ 10V | 1,500In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 150 V | 85 A | 17.5 mOhms | 20 V | 2 V | 110 nC | - 55 C | + 175 C | 300 W | Enhancement | TrenchFET | Tube | SUP85N15-21 | |||
Mfr: IRFBC40STRLPBF TTI: IRFBC40STRLPBF Vishay Semiconductors Availability: 1,600In StockMOSFETs N-Chan 600V 6.2 Amp | 1,600In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | 30 V | 2 V | 60 nC | - 55 C | + 150 C | 130 W | Enhancement | Reel | |||||
Mfr: SIR418DP-T1-GE3 TTI: SIR418DP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 40 A | 5 mOhms | 20 V | 1.1 V | 75 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR418DP-GE3 | |||
Mfr: SIS438DN-T1-GE3 TTI: SIS438DN-T1-GE3 Vishay Semiconductors Availability: 21,000In StockMOSFETs 20V Vds 20V Vgs PowerPAK 1212-8 | 21,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 16 A | 9.5 mOhms | 20 V | 1 V | 23 nC | - 55 C | + 150 C | 27.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS438DN-GE3 | |||
Mfr: IRFR9310PBF TTI: IRFR9310PBF Vishay Semiconductors Availability: 1,875In StockMOSFETs P-Chan 400V 1.8 Amp | 1,875In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 400 V | 1.8 A | 7 Ohms | 20 V | 4 V | 13 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | |||||
Mfr: SI7633DP-T1-GE3 TTI: SI7633DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -20V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 20 V | 60 A | 5.5 mOhms | 20 V | 3 V | 260 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | SI7633DP-GE3 | |||
60In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 500 V | 16 A | 300 mOhms | 20 V | 2 V | 199 nC | - 55 C | + 150 C | 695 W | Depletion | Tube | ||||||
Mfr: SIS454DN-T1-GE3 TTI: SIS454DN-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs 20V Vds 20V Vgs PowerPAK 1212-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 35 A | 3.7 mOhms | 20 V | 1 V | 53 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS454DN-GE3 | |||
Mfr: SI7143DP-T1-GE3 TTI: SI7143DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 35 A | 10 mOhms | 20 V | 2.8 V | 47.5 nC | - 55 C | + 150 C | 35.7 W | Enhancement | TrenchFET | Reel | SI7143DP-GE3 | |||
Mfr: IRF9Z30PBF TTI: IRF9Z30PBF Vishay Semiconductors Availability: 300In StockMOSFETs TO220 P-CH 50V 18A | 300In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 50 V | 18 A | 140 mOhms | 20 V | 4 V | 39 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF9Z30PBF-BE3 | ||||
300In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1.2 kV | 12 A | 2 Ohms | 30 V | 4.5 V | 106 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | ||||||
Mfr: SIRA14DP-T1-GE3 TTI: SIRA14DP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 58 A | 4.25 mOhms | - 16 V, 20 V | 1.1 V | 29 nC | - 55 C | + 150 C | 31.2 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA14DP-GE3 | |||
Mfr: SI2347DS-T1-GE3 TTI: SI2347DS-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -30V Vds 20V Vgs SOT-23 | 6,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 5 A | 33 mOhms | 20 V | 2.5 V | 6.9 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2347DS-T1-BE3 | |||
Mfr: SI4114DY-T1-GE3 TTI: SI4114DY-T1-GE3 Vishay Semiconductors Availability: 10,000In StockMOSFETs 20V Vds 16V Vgs SO-8 | 10,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 20 V | 20 A | 6 mOhms | 16 V | 1 V | 95 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4114DY-GE3 | |||
210In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | 20 V | 2.5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | Tube | ||||||
Mfr: RYM002N05T2CL TTI: RYM002N05T2CL ROHM Semiconductor Availability: 8,000In StockMOSFETs .9V DRIVE N-Ch MOSFET | 8,000In Stock | Si | SMD/SMT | SOT-723-3 | N-Channel | 1 Channel | 50 V | 200 mA | 2.2 Ohms | 8 V | 800 mV | - 55 C | + 150 C | 150 mW | Enhancement | Reel | RYM002N05 | |||||
Mfr: IRFI540GPBF TTI: IRFI540GPBF Vishay Semiconductors Availability: 500In StockMOSFETs TO220 100V 17A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 17 A | 77 mOhms | 20 V | 2 V | 72 nC | - 55 C | + 175 C | 48 W | Enhancement | Tube | |||||
Mfr: IRFP460LCPBF TTI: IRFP460LCPBF Vishay Semiconductors Availability: 875In StockMOSFETs TO247 500V 20A N-CH MOSFET | 875In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 20 A | 270 mOhms | 20 V | 2 V | 120 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: SIRA18DP-T1-GE3 TTI: SIRA18DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 33 A | 6 mOhms | - 16 V, 20 V | 1.2 V | 21.5 nC | - 55 C | + 150 C | 14.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IXFX64N50P TTI: IXFX64N50P IXYS Availability: 90In Stock60 On Order Expected 24-Dec-26 MOSFETs 64.0 Amps 500 V 0.09 Ohm Rds | 90In Stock60 On Order Expected 24-Dec-26 | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 500 V | 64 A | 85 mOhms | 30 V | 3 V | 150 nC | - 55 C | + 150 C | 830 W | Enhancement | HiPerFET | Tube | ||||
Mfr: SIHG30N60E-GE3 TTI: SIHG30N60E-GE3 Vishay / Siliconix Availability: 9,100In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 9,100In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 29 A | 125 mOhms | 30 V | 4 V | 85 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
120In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 500 V | 40 A | 230 mOhms | 20 V | 4 V | 205 nC | - 55 C | + 150 C | 890 W | Enhancement | PolarP | Tube | |||||
Mfr: SIR5108DP-T1-RE3 TTI: SIR5108DP-T1-RE3 Vishay / Siliconix Availability: 9,000In Stock9,000 On Order Expected 21-Feb-28 MOSFETs SO8 100V 55.9A N CHAN | 9,000In Stock9,000 On Order Expected 21-Feb-28 | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 100 V | 55.9 A | 10.5 mOhms | 20 V | 4 V | 14.8 nC | - 55 C | + 150 C | 65.7 W | Enhancement | Reel | |||||
Mfr: IRF740PBF-BE3 TTI: IRF740PBF-BE3 Vishay / Siliconix Availability: 7,000In StockMOSFETs TO220 400V 10A N-CH MOSFET | 7,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | 20 V | 4 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF740PBF | ||||
Mfr: IRF9640PBF-BE3 TTI: IRF9640PBF-BE3 Vishay / Siliconix Availability: 4,000In StockMOSFETs TO220 200V 11A P-CH MOSFET | 4,000In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | 20 V | 4 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF9640PBF |