Si - MOSFETs
11,667 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIDR5102EP-T1-RE3 TTI: SIDR5102EP-T1-RE3 Vishay Availability: 6,000In StockMOSFETs SOT669 100V 126A N-CH MOSFET | 6,000In Stock | Si | 100 V | 8.9 A | 5.6 mOhms | 20 V | 4 V | 20 nC | - 55 C | + 175 C | 7.5 W | Reel | ||||||||||
Mfr: IXFH30N50Q3 TTI: IXFH30N50Q3 IXYS Availability: 150In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 500V/30A | 150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 30 A | 200 mOhms | 30 V | 3.5 V | 62 nC | - 55 C | + 150 C | 690 W | Enhancement | HiPerFET | Tube | ||||
Mfr: SI2300DS-T1-BE3 TTI: SI2300DS-T1-BE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs SOT23 N-CH 30V 3.1A | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.6 A | 68 mOhms | 12 V | 1.5 V | 3 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2300DS-T1-GE3 | ||||
Mfr: SI7116DN-T1-GE3 TTI: SI7116DN-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 40V 16.4A 3.8W 7.8mohm @ 10V | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 16.4 A | 7.8 mOhms | 20 V | 2.5 V | 15 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7116DN-GE3 | |||
Mfr: IRLI640GPBF TTI: IRLI640GPBF Vishay Semiconductors Availability: 2,600In StockMOSFETs TO220 200V 9.9A N-CH MOSFET | 2,600In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 9.9 A | 180 mOhms | 10 V | 1 V | 66 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
Mfr: IRFZ48STRLPBF TTI: IRFZ48STRLPBF Vishay / Siliconix Availability: 1,600In StockMOSFETs TO263 N-CH 60V 50A | 1,600In Stock | Si | Reel | |||||||||||||||||||
Mfr: SIRA10DP-T1-GE3 TTI: SIRA10DP-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 2.8 mOhms | - 16 V, 20 V | 1.1 V | 51 nC | - 55 C | + 150 C | 40 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA10DP-GE3 | |||
Mfr: SIRA06DP-T1-GE3 TTI: SIRA06DP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 2.05 mOhms | - 16 V, 20 V | 1.1 V | 77 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA06DP-GE3 | |||
Mfr: SUD15N15-95-E3 TTI: SUD15N15-95-E3 Vishay Semiconductors Availability: 6,000In StockMOSFETs RECOMMENDED ALT SUD1 | 6,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 150 V | 15 A | 95 mOhms | 20 V | 2 V | 25 nC | - 55 C | + 175 C | 62 W | Enhancement | TrenchFET | Reel | SUD15N15-95-BE3 | |||
Mfr: SUP85N10-10-E3 TTI: SUP85N10-10-E3 Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 100V 85A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 85 A | 8.5 mOhms | 20 V | 1 V | 160 nC | - 55 C | + 175 C | 250 W | Enhancement | TrenchFET | Tube | ||||
Mfr: SI3440ADV-T1-GE3 TTI: SI3440ADV-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 150V Vds 20V Vgs TSOP-6 | 6,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 150 V | 2.2 A | 380 mOhms | 20 V | 4 V | 1.65 nC | - 55 C | + 150 C | 3.6 W | Enhancement | ThunderFET | Reel | SI3440ADV-T1-BE3 | |||
Mfr: SISHA04DN-T1-GE3 TTI: SISHA04DN-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs PPAK1212 N-CH 30V 30.9A | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 40 A | 2.15 mOhms | - 16 V, 20 V | 1.1 V | 51 nC | - 55 C | + 150 C | 52 W | Enhancement | PowerPAK | Reel | ||||
120In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 180 A | 7.5 mOhms | 20 V | 2.5 V | 154 nC | - 55 C | + 150 C | 735 W | Enhancement | HiPerFET | Tube | |||||
Mfr: IRFR1N60APBF TTI: IRFR1N60APBF Vishay Semiconductors Availability: 1,275In StockMOSFETs N-Chan 600V 1.4 Amp | 1,275In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 1.4 A | 7 Ohms | 30 V | 4 V | 14 nC | - 55 C | + 150 C | 36 W | Enhancement | Tube | IRFR1N60APBF-BE3 | ||||
Mfr: SI4164DY-T1-GE3 TTI: SI4164DY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 30V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 30 A | 3.2 mOhms | 20 V | 1.2 V | 95 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4164DY-GE3 | |||
150In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 85 V | 96 A | 13 mOhms | 15 V | 2 V | 180 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | ||||||
Mfr: IXFH320N10T2 TTI: IXFH320N10T2 IXYS Availability: 180In StockMOSFETs TRENCHT2 HIPERFET PWR MOSFET 100V 320A | 180In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 320 A | 3.5 mOhms | 20 V | 4 V | 430 nC | - 55 C | + 175 C | 1 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: SI5442DU-T1-GE3 TTI: SI5442DU-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 20V Vds 8V Vgs PowerPAK ChipFET | 6,000In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel | 1 Channel | 20 V | 25 A | 10 mOhms | 8 V | 400 mV | 45 nC | - 55 C | + 150 C | 31 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHG20N50E-GE3 TTI: SIHG20N50E-GE3 Vishay Semiconductors Availability: 1,150In StockMOSFETs 500V Vds 30V Vgs TO-247AC | 1,150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 19 A | 184 mOhms | 30 V | 4 V | 46 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | |||||
Mfr: SIHG47N60EF-GE3 TTI: SIHG47N60EF-GE3 Vishay / Siliconix Availability: 150In StockMOSFETs RECOMMENDED ALT SIHW | 150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 65 mOhms | 30 V | 2 V | 228 nC | - 55 C | + 150 C | 379 W | Enhancement | Tube | |||||
Mfr: IRFP240PBF TTI: IRFP240PBF Vishay Semiconductors Availability: 400In StockMOSFETs TO247 200V 20A N-CH MOSFET | 400In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 20 A | 180 mOhms | 20 V | 2 V | 70 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | |||||
Mfr: IRFR024PBF TTI: IRFR024PBF Vishay Semiconductors Availability: 900In StockMOSFETs TO252 N-CH 60V 14A | 900In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 14 A | 100 mOhms | 20 V | 2 V | 25 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: SIA923EDJ-T1-GE3 TTI: SIA923EDJ-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -20V Vds 8V Vgs PowerPAK SC-70 | 6,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 20 V | 4.5 A | 44 mOhms, 44 mOhms | 8 V | 1.4 V | 25 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA923EDJ-GE3 | |||
Mfr: SUM70060E-GE3 TTI: SUM70060E-GE3 Vishay Semiconductors Availability: 3,200In Stock800 On Order Expected 16-Sep-26 MOSFETs 100V Vds 20V Vgs D2PAK (TO-263) | 3,200In Stock800 On Order Expected 16-Sep-26 | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 131 A | 5.6 mOhms | 20 V | 4 V | 81 nC | - 55 C | + 175 C | 375 W | Enhancement | ThunderFET | Reel | ||||
Mfr: IRFIBE30GPBF TTI: IRFIBE30GPBF Vishay Semiconductors Availability: 300In StockMOSFETs N-Channel Power MOSFET 2.1A, 800V, 78nC | 300In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 800 V | 2.1 A | 3 Ohms | 20 V | 2 V | 78 nC | - 55 C | + 150 C | 35 W | Enhancement | Tube |