MOSFETs
18,730 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIA432DJ-T1-GE3 TTI: SIA432DJ-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SC-70 | 6,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 30 V | 12 A | 20 mOhms | 20 V | 1 V | 20 nC | - 55 C | + 150 C | 19.2 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA432DJ-GE3 | |||
Mfr: SIR606DP-T1-GE3 TTI: SIR606DP-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 37 A | 16.2 mOhms | 20 V | 2.4 V | 36.5 nC | - 55 C | + 150 C | 44.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
850In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 8.1 A | 450 mOhms | 20 V | 2 V | 41 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | ||||||
Mfr: SIB441EDK-T1-GE3 TTI: SIB441EDK-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -12V Vds 8V Vgs PowerPAK SC-75 | 3,000In Stock | Si | SMD/SMT | SC-75-6 | P-Channel | 1 Channel | 12 V | 9 A | 21 mOhms | 8 V | 900 mV | 33 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISA14DN-T1-GE3 TTI: SISA14DN-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs For New Design See: 78-SISHA14DN-T1-GE3 | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 20 A | 4.25 mOhms | - 16 V, 20 V | 1.1 V | 29 nC | - 55 C | + 150 C | 26.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHD7N60E-GE3 TTI: SIHD7N60E-GE3 Vishay / Siliconix Availability: 2,950In StockMOSFETs 600V Vds 30V Vgs DPAK (TO-252) | 2,950In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 7 A | 600 mOhms | 30 V | 4 V | 20 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | |||||
Mfr: IRFPC60LCPBF TTI: IRFPC60LCPBF Vishay Semiconductors Availability: 425In StockMOSFETs TO247 600V 16A N-CH MOSFET | 425In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 16 A | 400 mOhms | 30 V | 2 V | 120 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: SIJ470DP-T1-GE3 TTI: SIJ470DP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 100V 9.1mOhm@10V 58.8A N-CH | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 100 V | 58.8 A | 7.6 mOhms | 20 V | 2.3 V | 56 nC | - 55 C | + 150 C | 56.8 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: RSR020N06HZGTL TTI: RSR020N06HZGTL ROHM Semiconductor Availability: 165,000In StockMOSFETs SOT346 N-CH 60V 2A | 165,000In Stock | Si | SMD/SMT | SOT-346T-3 | N-Channel | 1 Channel | 60 V | 2 A | 170 mOhms | 20 V | 2.5 V | 2.7 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | Reel | RSR020N06HZG | |||
Mfr: SIRA52ADP-T1-RE3 TTI: SIRA52ADP-T1-RE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 40V Vds 20/-16V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 131 A | 1.63 mOhms | - 16 V, 20 V | 1.1 V | 100 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISS72DN-T1-GE3 TTI: SISS72DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 150V Vds 20V Vgs PowerPAK 1212-8S | 3,000In Stock | Si | SMD/SMT | PowerPAK1212-8 | N-Channel | 1 Channel | 150 V | 25.5 A | 42 mOhms | 20 V | 2 V | 22 nC | - 55 C | + 150 C | 65.8 W | Enhancement | TrenchFET, ThunderFET, PowerPAK | Reel | ||||
Mfr: SIHD5N80AE-GE3 TTI: SIHD5N80AE-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs DPAK 800V 4.4A E SERIES | 3,000In Stock | Si | SMD/SMT | TO-252-4 | N-Channel | 1 Channel | 800 V | 4.4 A | 1.35 Ohms | 30 V | 4 V | 11 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Reel | |||||
Mfr: SI1553CDL-T1-BE3 TTI: SI1553CDL-T1-BE3 Vishay / Siliconix Availability: 54,000In StockMOSFETs SOT363 NPCH 20V .7A | 54,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 20 V | 700 mA | 390 mOhms, 850 mOhms | 12 V | 1.5 V | 3 nC | - 55 C | + 150 C | 340 mW | Enhancement | TrenchFET | Reel | SI1553CDL-T1-GE3 | |||
Mfr: IRFB11N50APBF-BE3 TTI: IRFB11N50APBF-BE3 Vishay / Siliconix Availability: 2,650In StockMOSFETs TO220 500V 11A N-CH MOSFET | 2,650In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 11 A | 520 mOhms | 30 V | 4 V | 52 nC | - 55 C | + 150 C | 170 W | Enhancement | Tube | IRFB11N50APBF | ||||
Mfr: SI2303CDS-T1-BE3 TTI: SI2303CDS-T1-BE3 Vishay / Siliconix Availability: 78,000In StockMOSFETs SOT23 P-CH 30V 1.9A | 78,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 2.7 A | 190 mOhms | 20 V | 3 V | 2 nC | - 55 C | + 150 C | 2.3 W | Enhancement | Reel | SI2303CDS-T1-GE3 | ||||
Mfr: BSS670AHZGT116 TTI: BSS670AHZGT116 ROHM Semiconductor Availability: 21,000In StockMOSFETs SOT23 N-CH 60V .65A | 21,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 650 mA | 680 mOhms | 20 V | 2 V | - 55 C | + 150 C | 350 mW | Enhancement | Reel | ||||||
Mfr: SI8489EDB-T2-E1 TTI: SI8489EDB-T2-E1 Vishay Semiconductors Availability: 6,000In Stock33,000 On Order Expected MOSFETs -20V Vds 12V Vgs MICRO FOOT 1 x 1 | 6,000In Stock33,000 On Order Expected | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 20 V | 5.4 A | 36 mOhms | 12 V | 1.2 V | 27 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFR9014PBF TTI: IRFR9014PBF Vishay Semiconductors Availability: 9,450In StockMOSFETs TO252 P-CH 60V 5.1A | 9,450In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 5.1 A | 500 mOhms | 20 V | 2 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
Mfr: IRF740APBF TTI: IRF740APBF Vishay Semiconductors Availability: 150In StockMOSFETs TO220 400V 10A N-CH MOSFET | 150In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | 30 V | 4 V | 36 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF740APBF-BE3 | ||||
Mfr: SUP85N10-10-GE3 TTI: SUP85N10-10-GE3 Vishay / Siliconix Availability: 550In StockMOSFETs 100V 85A 250W 10.5mohm @ 10V | 550In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 85 A | 8.5 mOhms | 20 V | 1 V | 160 nC | - 55 C | + 175 C | 250 W | Enhancement | TrenchFET | Tube | ||||
Mfr: IRFU420PBF TTI: IRFU420PBF Vishay Semiconductors Availability: 75In StockMOSFETs N-Chan 500V 2.4 Amp | 75In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 500 V | 2.4 A | 3 Ohms | 20 V | 2 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: IRFP254PBF TTI: IRFP254PBF Vishay Semiconductors Availability: 10,650In StockMOSFETs TO247 250V 23A N-CH MOSFET | 10,650In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 23 A | 140 mOhms | 20 V | 2 V | 140 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: TK8R2A06PL,S4X TTI: TK8R2A06PL,S4X Toshiba Availability: 1,200In StockMOSFETs N-Ch 60V 1990pF 29nC 50A 34W | 1,200In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 50 A | 6.1 mOhms | 20 V | 1.5 V | 28.3 nC | - 55 C | + 175 C | 36 W | Enhancement | U-MOSIX-H | Tube | ||||
Mfr: BSS138BKT116 TTI: BSS138BKT116 ROHM Semiconductor Availability: 12,000In StockMOSFETs SOT23 N-CH 60V .4A | 12,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 400 mA | 680 mOhms | 20 V | 2 V | - 55 C | + 150 C | 350 mW | Enhancement | Reel | BSS138BK | |||||
Mfr: IXFP22N65X2 TTI: IXFP22N65X2 IXYS Availability: 100In StockMOSFETs MOSFET 650V/22A Ultra Junction X2 | 100In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 22 A | 160 mOhms | 30 V | 2.7 V | 38 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube |