MOSFETs
18,590 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRF9540PBF-BE3 TTI: IRF9540PBF-BE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO220 100V 19A P-CH MOSFET | 2,000In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 19 A | 200 mOhms | - 20 V, 20 V | 4 V | 61 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRF9540PBF | ||||
Mfr: IRFR9024PBF-BE3 TTI: IRFR9024PBF-BE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs TO252 P-CH 60V 8.8A | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 8.8 A | 280 mOhms | - 20 V, 20 V | 2 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: SSM3K56FS,LF TTI: SSM3K56FS,LF Toshiba Availability: 12,000In StockMOSFETs N-Ch U-MOSVI FET ID 0.8A 20VDSS 55pF | 12,000In Stock | Si | SMD/SMT | SOT-416-3 | N-Channel | 1 Channel | 20 V | 800 mA | 235 mOhms | - 8 V, 8 V | 400 mV | 1 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVII-H | Reel | ||||
210In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | - 20 V, 20 V | 2.5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | Tube | ||||||
Mfr: IRFP450LCPBF TTI: IRFP450LCPBF Vishay Semiconductors Availability: 250In StockMOSFETs TO247 500V 14A N-CH MOSFET | 250In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 14 A | 400 mOhms | - 30 V, 30 V | 2 V | 74 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SIR878BDP-T1-RE3 TTI: SIR878BDP-T1-RE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 42.5 A | 12 mOhms | - 20 V, 20 V | 2 V | 24.8 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRFI540GPBF TTI: IRFI540GPBF Vishay Semiconductors Availability: 500In StockMOSFETs TO220 100V 17A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 17 A | 77 mOhms | - 20 V, 20 V | 2 V | 72 nC | - 55 C | + 175 C | 48 W | Enhancement | Tube | |||||
Mfr: RYM002N05T2CL TTI: RYM002N05T2CL ROHM Semiconductor Availability: 8,000In StockMOSFETs .9V DRIVE N-Ch MOSFET | 8,000In Stock | Si | SMD/SMT | SOT-723-3 | N-Channel | 1 Channel | 50 V | 200 mA | 2.2 Ohms | - 8 V, 8 V | 800 mV | - 55 C | + 150 C | 150 mW | Enhancement | Reel | RYM002N05 | |||||
Mfr: SSM6L09FUTE85LF TTI: SSM6L09FUTE85LF Toshiba Availability: 21,000In StockMOSFETs N-Ch P-Ch Sg FET 0.4A -0.2A 30V -30V | 21,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 30 V | 200 mA, 400 mA | 4 Ohms | - 20 V, 20 V | 1.8 V | - 55 C | + 150 C | 300 mW | Enhancement | Reel | ||||||
Mfr: SI7155DP-T1-GE3 TTI: SI7155DP-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs -40V Vds 20V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 40 V | 100 A | 3.6 mOhms | - 20 V, 20 V | 2.3 V | 220 nC | - 55 C | + 150 C | 104 W | Enhancement | Reel | |||||
60In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 6 A | 3.5 Ohms | - 20 V, 20 V | 5 V | 67 nC | - 55 C | + 150 C | 540 W | Enhancement | Tube | ||||||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 10 A | 1.1 Ohms | - 30 V, 30 V | 5.5 V | 40 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIHFR9310TRL-GE3 TTI: SIHFR9310TRL-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs TO252 400V 1.8A P-CH MOSFET | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | Reel | |||||||||||||||||
Mfr: SIHG22N60E-GE3 TTI: SIHG22N60E-GE3 Vishay Semiconductors Availability: 3,850In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 3,850In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 21 A | 180 mOhms | - 30 V, 30 V | 4 V | 57 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | |||||
Mfr: SIHG018N60E-GE3 TTI: SIHG018N60E-GE3 Vishay Semiconductors Availability: 1,425In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 1,425In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 600 V | 99 A | 23 mOhms | - 30 V, 30 V | 3 V | 228 nC | - 55 C | + 150 C | 524 W | Enhancement | Tube | |||||
Mfr: IRF720PBF-BE3 TTI: IRF720PBF-BE3 Vishay / Siliconix Availability: 4,850In StockMOSFETs TO220 400V 3.3A N-CH MOSFET | 4,850In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 3.3 A | 1.8 Ohms | - 20 V, 20 V | 4 V | 20 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | IRF720PBF | ||||
Mfr: SI3443CDV-T1-BE3 TTI: SI3443CDV-T1-BE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs TSOP6 P-CH 20V 4.7A | 12,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 5.97 A | 100 mOhms | - 12 V, 12 V | 1.5 V | 7.53 nC | - 55 C | + 150 C | 3.2 W | Enhancement | Reel | SI3443CDV-T1-GE3 | ||||
Mfr: SIA817EDJ-T1-GE3 TTI: SIA817EDJ-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -30V Vds 12V Vgs PowerPAK SC-70 | 6,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 30 V | 4.5 A | 54 mOhms | - 12 V, 12 V | 1.3 V | 23 nC | - 55 C | + 150 C | 6.5 W | Enhancement | LITTLE FOOT, PowerPAK | Reel | ||||
Mfr: SI7812DN-T1-GE3 TTI: SI7812DN-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 75V Vds 20V Vgs PowerPAK 1212-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 75 V | 16 A | 37 mOhms | - 20 V, 20 V | 3 V | 16 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7812DN-GE3 | |||
Mfr: SI1077X-T1-GE3 TTI: SI1077X-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs -20V Vds 8V Vgs SC89-6 | 18,000In Stock | Si | SMD/SMT | SC-89-6 | P-Channel | 1 Channel | 20 V | 1.75 A | 65 mOhms | - 8 V, 8 V | 1 V | 31.1 nC | - 55 C | + 150 C | 330 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7655ADN-T1-GE3 TTI: SI7655ADN-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs -20V Vds 12V Vgs PowerPAK 1212-8S | 15,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 40 A | 3.6 mOhms | - 12 V, 12 V | 500 mV | 150 nC | - 50 C | + 150 C | 57 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFP450APBF TTI: IRFP450APBF Vishay Semiconductors Availability: 800In StockMOSFETs TO247 500V 14A N-CH MOSFET | 800In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 14 A | 400 mOhms | - 30 V, 30 V | 2 V | 64 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SIA533EDJ-T1-GE3 TTI: SIA533EDJ-T1-GE3 Vishay Semiconductors Availability: 27,000In StockMOSFETs -12V Vds 8V Vgs PowerPAK SC-70 | 27,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel, P-Channel | 2 Channel | 12 V | 4.5 A | 34 mOhms, 59 mOhms | - 8 V, 8 V | 400 mV | 10 nC, 13 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA533EDJ-GE3 | |||
Mfr: BUK9Y58-75B,115 TTI: BUK9Y58-75B,115 Nexperia Availability: 1,500In StockMOSFETs SOT669 N-CH 75V 20.73A | 1,500In Stock | Si | SMD/SMT | SOT-669-5 | N-Channel | 1 Channel | 75 V | 20.73 A | 53 mOhms | - 10 V, 10 V | 1.25 V | 10.7 nC | - 55 C | + 175 C | 60.4 W | Enhancement | Reel | 934063306115 | ||||
Mfr: SI2300DS-T1-BE3 TTI: SI2300DS-T1-BE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs SOT23 N-CH 30V 3.1A | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.6 A | 68 mOhms | - 12 V, 12 V | 1.5 V | 3 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2300DS-T1-GE3 |
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