Vishay - MOSFETs
7,514 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
7,250In Stock1,000 On Order Expected 07-Apr-27 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 14 A | 160 mOhms | - 20 V, 20 V | 4 V | 26 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF530PBF-BE3 IRF520SPBF | |||||
Mfr: IRFBG30PBF TTI: IRFBG30PBF Vishay Semiconductors Availability: 1,450In Stock2,000 On Order Expected 03-Mar-27 MOSFETs TO220 1KV 3.1A N-CH MOSFET | 1,450In Stock2,000 On Order Expected 03-Mar-27 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 3.1 A | 5 Ohms | - 20 V, 20 V | 4 V | 80 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBG30PBF-BE3 | ||||
Mfr: 2N7002K-T1-GE3 TTI: 2N7002K-T1-GE3 Vishay Semiconductors Availability: 114,000In StockMOSFETs 60V Vds 20V Vgs SOT-23 | 114,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 300 mA | 2 Ohms | - 20 V, 20 V | 1 V | 400 pC | - 55 C | + 150 C | 350 mW | Enhancement | Reel | 2N7002K-GE3 | ||||
Mfr: SUM90P10-19L-E3 TTI: SUM90P10-19L-E3 Vishay Semiconductors Availability: 24,800In StockMOSFETs 100V 90A 375W 19mohm @ 10V | 24,800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 90 A | 19 mOhms | - 20 V, 20 V | 1 V | 217 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFP264PBF TTI: IRFP264PBF Vishay Semiconductors Availability: 8,800In StockMOSFETs TO247 250V 38A N-CH MOSFET | 8,800In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 38 A | 75 mOhms | - 20 V, 20 V | 2 V | 210 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: SI2302CDS-T1-GE3 TTI: SI2302CDS-T1-GE3 Vishay Semiconductors Availability: 108,000In StockMOSFETs 20V Vds 8V Vgs SOT-23 | 108,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | - 8 V, 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | TrenchFET | Reel | SI2302CDS-T1-BE3 SI2302CDS-GE3 | |||
Mfr: IRF9640PBF TTI: IRF9640PBF Vishay Semiconductors Availability: 3,550In StockMOSFETs TO220 200V 11A P-CH MOSFET | 3,550In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | - 20 V, 20 V | 4 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF9640PBF-BE3 | ||||
1,750In Stock31,400 On Order Expected | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 20 V, 20 V | 4 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF840PBF-BE3 SIHF840-E3 | |||||
Mfr: SIS434DN-T1-GE3 TTI: SIS434DN-T1-GE3 Vishay Semiconductors Availability: 93,000In StockMOSFETs 40V Vds 20V Vgs PowerPAK 1212-8 | 93,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 35 A | 6.3 mOhms | - 20 V, 20 V | 1.2 V | 40 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS434DN-GE3 | |||
3,300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 5.5 A | 1 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF730PBF-BE3 | |||||
Mfr: SI4925DDY-T1-GE3 TTI: SI4925DDY-T1-GE3 Vishay Semiconductors Availability: 37,500In StockMOSFETs -30V Vds 20V Vgs SO-8 | 37,500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 30 V | 8 A | 29 mOhms | - 20 V, 20 V | 1 V | 32 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4925DDY-GE3 | |||
Mfr: SI1308EDL-T1-BE3 TTI: SI1308EDL-T1-BE3 Vishay / Siliconix Availability: 0In Stock84,000 On Order Expected 06-Jul-29 MOSFETs SOT323 N-CH 30V 1.4A | 0In Stock84,000 On Order Expected 06-Jul-29 | Si | SMD/SMT | SOT-323-3 | N-Channel | 1 Channel | 30 V | 1.5 A | 132 mOhms | - 12 V, 12 V | 1.5 V | 2.7 nC | - 55 C | + 150 C | 400 mW | Enhancement | TrenchFET | Reel | SI1308EDL-T1-GE3 | |||
Mfr: SIA483DJ-T1-GE3 TTI: SIA483DJ-T1-GE3 Vishay Semiconductors Availability: 3,000In Stock78,000 On Order Expected MOSFETs -30V Vds 20V Vgs PowerPAK SC-70 | 3,000In Stock78,000 On Order Expected | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 30 V | 12 A | 16 mOhms | - 20 V, 20 V | 2.2 V | 45 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI4435FDY-T1-GE3 TTI: SI4435FDY-T1-GE3 Vishay / Siliconix Availability: 182,500In StockMOSFETs -30V Vds 20V Vgs SO-8 | 182,500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 12.6 A | 30 mOhms | - 20 V, 20 V | 2.2 V | 13.5 nC | - 55 C | + 150 C | 4.8 W | Enhancement | Reel | |||||
Mfr: SI2371EDS-T1-GE3 TTI: SI2371EDS-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs -30V Vds 12V Vgs SOT-23 | 15,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 4.8 A | 45 mOhms | - 12 V, 12 V | 1.5 V | 10.6 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2371EDS-T1-BE3 | |||
Mfr: IRFP360PBF TTI: IRFP360PBF Vishay Semiconductors Availability: 6,000In StockMOSFETs TO247 400V 23A N-CH MOSFET | 6,000In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 400 V | 23 A | 200 mOhms | - 20 V, 20 V | 2 V | 210 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
1,850In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | - 20 V, 20 V | 4 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF740PBF-BE3 SIHF740-E3 | |||||
Mfr: SI1416EDH-T1-GE3 TTI: SI1416EDH-T1-GE3 Vishay Semiconductors Availability: 9,000In Stock45,000 On Order Expected MOSFETs 30V Vds 12V Vgs SC70-6 | 9,000In Stock45,000 On Order Expected | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 30 V | 3.9 A | 58 mOhms | - 12 V, 12 V | 1.4 V | 12 nC | - 55 C | + 150 C | 1.56 W | Enhancement | TrenchFET | Reel | SI1416EDH-T1-BE3 SI1410EDH-T1-E3-S SI1410EDH-T1-GE3 SI1426DH-T1-E3-S | |||
Mfr: IRFBG30PBF-BE3 TTI: IRFBG30PBF-BE3 Vishay / Siliconix Availability: 14,100In StockMOSFETs TO220 1KV 3.1A N-CH MOSFET | 14,100In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 3.1 A | 5 Ohms | - 20 V, 20 V | 4 V | 80 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBG30PBF | ||||
Mfr: IRFS9N60APBF TTI: IRFS9N60APBF Vishay Semiconductors Availability: 5,750In StockMOSFETs TO263 600V 9.2A N-CH MOSFET | 5,750In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 9.2 A | 750 mOhms | - 30 V, 30 V | 2 V | 49 nC | - 55 C | + 150 C | 170 W | Enhancement | Tube | |||||
Mfr: SI9407BDY-T1-GE3 TTI: SI9407BDY-T1-GE3 Vishay Semiconductors Availability: 5,000In StockMOSFETs -60V Vds 20V Vgs SO-8 | 5,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 60 V | 4.7 A | 120 mOhms | - 20 V, 20 V | 1 V | 14.5 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI9407BDY-GE3 | |||
1,150In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | - 20 V, 20 V | 4 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF-BE3 | |||||
Mfr: IRF9Z34PBF TTI: IRF9Z34PBF Vishay Semiconductors Availability: 15,450In StockMOSFETs TO220 P-CH 60V 18A | 15,450In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 18 A | 140 mOhms | - 20 V, 20 V | 4 V | 34 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF9Z34PBF-BE3 | ||||
Mfr: IRF9640STRLPBF TTI: IRF9640STRLPBF Vishay Semiconductors Availability: 0In Stock2,400 On Order Expected 19-Oct-26 MOSFETs TO263 200V 11A P-CH MOSFET | 0In Stock2,400 On Order Expected 19-Oct-26 | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | - 20 V, 20 V | 4 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: IRFP250PBF TTI: IRFP250PBF Vishay Semiconductors Availability: 1,000In Stock7,000 On Order Expected MOSFETs TO247 200V 30A N-CH MOSFET | 1,000In Stock7,000 On Order Expected | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 30 A | 85 mOhms | - 20 V, 20 V | 2 V | 140 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube |
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