skyFETs - Vishay - MOSFETs
3 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: SIZF918DT-T1-GE3 TTI: SIZF918DT-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAIR 6 x 5F | 0In Stock | Si | SMD/SMT | PowerPAIR-6x5-8 | N-Channel, NPN | 2 Channel | 30 V | 40 A, 60 A | 6.8 mOhms, 2.7 mOhms | - 12 V, 16 V | 1.1 V, 1 V | 14.6 nC, 37 nC | - 50 C | + 150 C | 26.6 W, 50 W | Enhancement | TrenchFET, SkyFET, PowerPAIR | Reel | |||
Mfr: SIZF906ADT-T1-GE3 TTI: SIZF906ADT-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAIR 6 x 5F | 0In Stock | Si | SMD/SMT | PowerPAIR-6x5-8 | N-Channel | 2 Channel | 30 V | 60 A | 3.8 mOhms, 1.17 mOhms | - 16 V, 20 V | 1.1 V | 24.5 nC, 100 nC | - 55 C | + 150 C | 38 W, 83 W | Enhancement | TrenchFET, SkyFET, PowerPAIR | Reel | |||
Mfr: SIZF914DT-T1-GE3 TTI: SIZF914DT-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 25V Vds 20V Vgs PowerPAIR 6 x 5F | 0In Stock | Si | SMD/SMT | PowerPAIR-6x5-8 | N-Channel, NPN | 2 Channel | 25 V | 40 A, 60 A | 6.2 mOhms, 1.5 mOhms | - 12 V, 16 V | 1.1 V | 14 nC, 65 nC | - 50 C | + 150 C | 26.6 W, 60 W | Enhancement | TrenchFET, SkyFET, PowerPAIR | Reel |