Vishay - MOSFETs
7,529 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIA929DJ-T1-GE3 TTI: SIA929DJ-T1-GE3 Vishay Semiconductors Availability: 21,000In StockMOSFETs -30V Vds 12V Vgs PowerPAK SC-70 | 21,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 30 V | 4.5 A | 52 mOhms, 52 mOhms | 12 V | 1.1 V | 21 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA929DJ-GE3 | |||
Mfr: SIHG47N60E-GE3 TTI: SIHG47N60E-GE3 Vishay / Siliconix Availability: 8,000In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 8,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 64 mOhms | 30 V | 4 V | 148 nC | - 55 C | + 150 C | 357 W | Enhancement | Tube | |||||
Mfr: SI7629DN-T1-GE3 TTI: SI7629DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 20V 35A 52W | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 3.8 mOhms | 12 V | 1.5 V | 177 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7629DN-GE3 | |||
Mfr: SI2302CDS-T1-E3 TTI: SI2302CDS-T1-E3 Vishay Semiconductors Availability: 15,000In StockMOSFETs 20V Vds 8V Vgs SOT-23 | 15,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.6 A | 57 mOhms | 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 710 mW | Enhancement | TrenchFET | Reel | SI2302CDS-T1-BE3 SI2302CDS-E3 | |||
Mfr: SI3433CDV-T1-BE3 TTI: SI3433CDV-T1-BE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs TSOP6 P-CH 20V 5.2A | 12,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 6 A | 38 mOhms | 8 V | 1 V | 18 nC | - 55 C | + 150 C | 3.3 W | Enhancement | Reel | SI3433CDV-T1-GE3 | ||||
Mfr: SI2338DS-T1-BE3 TTI: SI2338DS-T1-BE3 Vishay / Siliconix Availability: 21,000In StockMOSFETs SOT23 N-CH 30V 5.5A | 21,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 6 A | 28 mOhms | 20 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2338DS-T1-GE3 | ||||
Mfr: SIR836DP-T1-GE3 TTI: SIR836DP-T1-GE3 Vishay Semiconductors Availability: 21,000In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 21,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 21 A | 19 mOhms | 20 V | 1.2 V | 11.8 nC | - 55 C | + 150 C | 15.6 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR836DP-GE3 | |||
Mfr: SI2307CDS-T1-BE3 TTI: SI2307CDS-T1-BE3 Vishay / Siliconix Availability: 93,000In StockMOSFETs P-CHANNEL 30V (D-S) | 93,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 3.5 A | 88 mOhms | 20 V | 3 V | 4.1 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI2307CDS-T1-GE3 SI2307CDS-T1-E3 | |||
Mfr: SIHG052N60EF-GE3 TTI: SIHG052N60EF-GE3 Vishay / Siliconix Availability: 1,950In StockMOSFETs EF Series Pwr MOSFET w/Fast Body Diode | 1,950In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 48 A | 52 mOhms | 30 V | 5 V | 67 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | ||||||
Mfr: IRF740APBF-BE3 TTI: IRF740APBF-BE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 400V 10A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | 30 V | 4 V | 36 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF740APBF | ||||
Mfr: IRFZ44PBF-BE3 TTI: IRFZ44PBF-BE3 Vishay / Siliconix Availability: 1,300In StockMOSFETs TO220 N-CH 60V 50A | 1,300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | 20 V | 4 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRFZ44PBF | ||||
Mfr: SI1965DH-T1-BE3 TTI: SI1965DH-T1-BE3 Vishay Availability: 66,000In StockMOSFETs SOT363 2PCH 12V 1.14A | 66,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 12 V | 1.3 A | 390 mOhms | 8 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | SI1965DH-T1-GE3 SI1965DH-T1-E3 | ||||
Mfr: SIS184LDN-T1-GE3 TTI: SIS184LDN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs PPAK1212 N-CH 60V 18.7A | 6,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | 20 V | 3 V | - 55 C | + 175 C | Enhancement | Reel | |||||||||
Mfr: SI2374DS-T1-BE3 TTI: SI2374DS-T1-BE3 Vishay / Siliconix Availability: 75,000In StockMOSFETs SOT23 N-CH 20V 4.5A | 75,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 5.9 A | 30 mOhms | 8 V | 1 V | 7.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2374DS-T1-GE3 | ||||
Mfr: IRFPC60LCPBF TTI: IRFPC60LCPBF Vishay Semiconductors Availability: 425In StockMOSFETs TO247 600V 16A N-CH MOSFET | 425In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 16 A | 400 mOhms | 30 V | 2 V | 120 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: SIR606DP-T1-GE3 TTI: SIR606DP-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 37 A | 16.2 mOhms | 20 V | 2.4 V | 36.5 nC | - 55 C | + 150 C | 44.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI5935CDC-T1-GE3 TTI: SI5935CDC-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds 8V Vgs 1206-8 ChipFET | 3,000In Stock | Si | SMD/SMT | ChipFET-8 | P-Channel | 2 Channel | 20 V | 4 A | 100 mOhms | 8 V | 400 mV | 11 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI5935CDC-GE3 SIR814DP-T1-GE3 | |||
Mfr: SIJ470DP-T1-GE3 TTI: SIJ470DP-T1-GE3 Vishay Semiconductors Availability: 9,000In Stock3,000 On Order Expected 20-Nov-26 MOSFETs 100V 9.1mOhm@10V 58.8A N-CH | 9,000In Stock3,000 On Order Expected 20-Nov-26 | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 100 V | 58.8 A | 7.6 mOhms | 20 V | 2.3 V | 56 nC | - 55 C | + 150 C | 56.8 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: SIA432DJ-T1-GE3 TTI: SIA432DJ-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SC-70 | 6,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 30 V | 12 A | 20 mOhms | 20 V | 1 V | 20 nC | - 55 C | + 150 C | 19.2 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA432DJ-GE3 | |||
Mfr: IRFB11N50APBF-BE3 TTI: IRFB11N50APBF-BE3 Vishay / Siliconix Availability: 2,650In StockMOSFETs TO220 500V 11A N-CH MOSFET | 2,650In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 11 A | 520 mOhms | 30 V | 4 V | 52 nC | - 55 C | + 150 C | 170 W | Enhancement | Tube | IRFB11N50APBF | ||||
Mfr: IRF740APBF TTI: IRF740APBF Vishay Semiconductors Availability: 150In StockMOSFETs TO220 400V 10A N-CH MOSFET | 150In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | 30 V | 4 V | 36 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF740APBF-BE3 | ||||
Mfr: SIB441EDK-T1-GE3 TTI: SIB441EDK-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -12V Vds 8V Vgs PowerPAK SC-75 | 3,000In Stock | Si | SMD/SMT | SC-75-6 | P-Channel | 1 Channel | 12 V | 9 A | 21 mOhms | 8 V | 900 mV | 33 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI6423DQ-T1-GE3 TTI: SI6423DQ-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -12V Vds 8V Vgs TSSOP-8 | 12,000In Stock | Si | SMD/SMT | TSSOP-8 | P-Channel | 1 Channel | 12 V | 9.5 A | 8.5 mOhms | 8 V | 400 mV | 110 nC | - 55 C | + 150 C | 1.5 W | Enhancement | TrenchFET | Reel | SI6423DQ-GE3 | |||
Mfr: IRFP9240PBF TTI: IRFP9240PBF Vishay Semiconductors Availability: 750In StockMOSFETs TO247 200V 12A P-CH MOSFET | 750In Stock | Si | Through Hole | TO-247AC-3 | P-Channel | 1 Channel | 200 V | 12 A | 500 mOhms | 20 V | 2 V | 44 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | |||||
850In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 8.1 A | 450 mOhms | 20 V | 2 V | 41 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube |