Vishay - MOSFETs
7,551 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI6423DQ-T1-GE3 TTI: SI6423DQ-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs -12V Vds 8V Vgs TSSOP-8 | 9,000In Stock | Si | SMD/SMT | TSSOP-8 | P-Channel | 1 Channel | 12 V | 9.5 A | 8.5 mOhms | 8 V | 400 mV | 110 nC | - 55 C | + 150 C | 1.5 W | Enhancement | TrenchFET | Reel | SI6423DQ-GE3 | |||
Mfr: SISS78LDN-T1-GE3 TTI: SISS78LDN-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs PPAK1212 N-CH 70V 19.4A | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 70 V | 66.7 A | 4.8 mOhms | 20 V | 2.3 V | 32 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHD5N80AE-GE3 TTI: SIHD5N80AE-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs DPAK 800V 4.4A E SERIES | 3,000In Stock | Si | SMD/SMT | TO-252-4 | N-Channel | 1 Channel | 800 V | 4.4 A | 1.35 Ohms | 30 V | 4 V | 11 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Reel | |||||
Mfr: SI2369DS-T1-BE3 TTI: SI2369DS-T1-BE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs SOT23 P-CH 30V 5.4A | 9,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 7.6 A | 29 mOhms | 20 V | 2.5 V | 11.4 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2369DS-T1-GE3 | ||||
Mfr: SI8489EDB-T2-E1 TTI: SI8489EDB-T2-E1 Vishay Semiconductors Availability: 18,000In Stock21,000 On Order Expected 24-Dec-26 MOSFETs -20V Vds 12V Vgs MICRO FOOT 1 x 1 | 18,000In Stock21,000 On Order Expected 24-Dec-26 | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 20 V | 5.4 A | 36 mOhms | 12 V | 1.2 V | 27 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SISA14DN-T1-GE3 TTI: SISA14DN-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs For New Design See: 78-SISHA14DN-T1-GE3 | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 20 A | 4.25 mOhms | - 16 V, 20 V | 1.1 V | 29 nC | - 55 C | + 150 C | 26.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI2303CDS-T1-BE3 TTI: SI2303CDS-T1-BE3 Vishay / Siliconix Availability: 72,000In StockMOSFETs SOT23 P-CH 30V 1.9A | 72,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 2.7 A | 190 mOhms | 20 V | 3 V | 2 nC | - 55 C | + 150 C | 2.3 W | Enhancement | Reel | SI2303CDS-T1-GE3 | ||||
Mfr: IRFI9640GPBF TTI: IRFI9640GPBF Vishay Semiconductors Availability: 700In StockMOSFETs TO220 200V 6.1A P-CH MOSFET | 700In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 6.1 A | 500 mOhms | 20 V | 4 V | 44 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
Mfr: IRFR9014PBF TTI: IRFR9014PBF Vishay Semiconductors Availability: 9,450In StockMOSFETs TO252 P-CH 60V 5.1A | 9,450In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 5.1 A | 500 mOhms | 20 V | 2 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
Mfr: SI9407BDY-T1-E3 TTI: SI9407BDY-T1-E3 Vishay Semiconductors Availability: 2,500In StockMOSFETs -60V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 60 V | 4.7 A | 100 mOhms | 20 V | 1 V | 14.5 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI9407BDY-E3 | |||
Mfr: SIHG018N60E-GE3 TTI: SIHG018N60E-GE3 Vishay Semiconductors Availability: 1,425In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 1,425In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 600 V | 99 A | 23 mOhms | 30 V | 3 V | 228 nC | - 55 C | + 150 C | 524 W | Enhancement | Tube | |||||
Mfr: SIR104LDP-T1-RE3 TTI: SIR104LDP-T1-RE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs N-CHANNEL 100 V | 3,000In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 100 V | 81 A | 6.1 mOhms | 20 V | 3 V | 73 nC | - 55 C | + 150 C | 100 W | Enhancement | PowerPAK | Reel | |||||
Mfr: SIDR5102EP-T1-RE3 TTI: SIDR5102EP-T1-RE3 Vishay Availability: 6,000In StockMOSFETs SOT669 100V 126A N-CH MOSFET | 6,000In Stock | Si | 100 V | 8.9 A | 5.6 mOhms | 20 V | 4 V | 20 nC | - 55 C | + 175 C | 7.5 W | Reel | ||||||||||
Mfr: IRFBE20PBF TTI: IRFBE20PBF Vishay Semiconductors Availability: 450In StockMOSFETs TO220 800V 1.8A N-CH MOSFET | 450In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 1.8 A | 6.5 Ohms | 20 V | 4 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Tube | IRFBE20PBF-BE3 | ||||
Mfr: SI7812DN-T1-GE3 TTI: SI7812DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 75V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 75 V | 16 A | 37 mOhms | 20 V | 3 V | 16 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7812DN-GE3 | |||
Mfr: SIA817EDJ-T1-GE3 TTI: SIA817EDJ-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -30V Vds 12V Vgs PowerPAK SC-70 | 3,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 30 V | 4.5 A | 54 mOhms | 12 V | 1.3 V | 23 nC | - 55 C | + 150 C | 6.5 W | Enhancement | LITTLE FOOT, PowerPAK | Reel | ||||
Mfr: SIHFR9310TRL-GE3 TTI: SIHFR9310TRL-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs TO252 400V 1.8A P-CH MOSFET | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | Reel | |||||||||||||||||
Mfr: SIHG22N60E-GE3 TTI: SIHG22N60E-GE3 Vishay Semiconductors Availability: 3,850In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 3,850In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 21 A | 180 mOhms | 30 V | 4 V | 57 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | |||||
Mfr: SI3474DV-T1-BE3 TTI: SI3474DV-T1-BE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs TSOP6 100V 3.8A N-CH MOSFET | 9,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 100 V | 3.8 A | 126 mOhms | 20 V | 1.2 V | 2.9 nC | - 55 C | + 150 C | 3.6 W | Enhancement | Reel | SI3474DV-T1-GE3 | ||||
Mfr: SISS42LDN-T1-GE3 TTI: SISS42LDN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs Nch 100V Vds 20V Vgs PowerPAK 1212-8S | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 100 V | 39 A | 14.9 mOhms | 20 V | 1 V | 48 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI4058DY-T1-GE3 TTI: SI4058DY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 100V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 10.3 A | 26 mOhms | 20 V | 1.2 V | 12 nC | - 55 C | + 150 C | 5.6 W | Enhancement | Reel | |||||
Mfr: IRF630PBF-BE3 TTI: IRF630PBF-BE3 Vishay / Siliconix Availability: 2,500In StockMOSFETs TO220 200V 9A N-CH MOSFET | 2,500In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 9 A | 400 mOhms | 20 V | 4 V | 43 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF630PBF | ||||
Mfr: SI2343CDS-T1-BE3 TTI: SI2343CDS-T1-BE3 Vishay / Siliconix Availability: 30,000In StockMOSFETs SOT23 P-CH 30V 4.2A | 30,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 5.9 A | 45 mOhms | 20 V | 2.5 V | 7 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2343CDS-T1-GE3 | ||||
Mfr: SIHB24N80AE-GE3 TTI: SIHB24N80AE-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs N-CHANNEL 800V E Series Pwr MOSFET | 2,000In Stock | Si | SMD/SMT | TO-263-4 | N-Channel | 1 Channel | 800 V | 21 A | 184 mOhms | 30 V | 4 V | 59 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | |||||
Mfr: SI2300DS-T1-BE3 TTI: SI2300DS-T1-BE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT23 N-CH 30V 3.1A | 6,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.6 A | 68 mOhms | 12 V | 1.5 V | 3 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2300DS-T1-GE3 |