Vishay - MOSFETs
7,529 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SIRA52ADP-T1-RE3 TTI: SIRA52ADP-T1-RE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 40V Vds 20/-16V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 131 A | 1.63 mOhms | - 16 V, 20 V | 1.1 V | 100 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI1553CDL-T1-BE3 TTI: SI1553CDL-T1-BE3 Vishay / Siliconix Availability: 54,000In StockMOSFETs SOT363 NPCH 20V .7A | 54,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 20 V | 700 mA | 390 mOhms, 850 mOhms | 12 V | 1.5 V | 3 nC | - 55 C | + 150 C | 340 mW | Enhancement | TrenchFET | Reel | SI1553CDL-T1-GE3 | |||
Mfr: SI2369DS-T1-BE3 TTI: SI2369DS-T1-BE3 Vishay / Siliconix Availability: 9,000In Stock30,000 On Order Expected 18-Nov-26 MOSFETs SOT23 P-CH 30V 5.4A | 9,000In Stock30,000 On Order Expected 18-Nov-26 | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 7.6 A | 29 mOhms | 20 V | 2.5 V | 11.4 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2369DS-T1-GE3 | ||||
Mfr: SISA14DN-T1-GE3 TTI: SISA14DN-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs For New Design See: 78-SISHA14DN-T1-GE3 | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 20 A | 4.25 mOhms | - 16 V, 20 V | 1.1 V | 29 nC | - 55 C | + 150 C | 26.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHD7N60E-GE3 TTI: SIHD7N60E-GE3 Vishay / Siliconix Availability: 2,950In StockMOSFETs 600V Vds 30V Vgs DPAK (TO-252) | 2,950In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 7 A | 600 mOhms | 30 V | 4 V | 20 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | |||||
Mfr: SI7108DN-T1-E3 TTI: SI7108DN-T1-E3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 20V 22A 0.0049Ohm | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 22 A | 4.9 mOhms | 16 V | 2 V | 20 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7108DN-E3 | |||
Mfr: SI2303CDS-T1-BE3 TTI: SI2303CDS-T1-BE3 Vishay / Siliconix Availability: 84,000In StockMOSFETs SOT23 P-CH 30V 1.9A | 84,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 2.7 A | 190 mOhms | 20 V | 3 V | 2 nC | - 55 C | + 150 C | 2.3 W | Enhancement | Reel | SI2303CDS-T1-GE3 | ||||
Mfr: IRF9Z34PBF-BE3 TTI: IRF9Z34PBF-BE3 Vishay / Siliconix Availability: 2,350In StockMOSFETs TO220 P-CH 60V 18A | 2,350In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 18 A | 140 mOhms | 20 V | 4 V | 34 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF9Z34PBF | ||||
Mfr: IRFP254PBF TTI: IRFP254PBF Vishay Semiconductors Availability: 10,650In StockMOSFETs TO247 250V 23A N-CH MOSFET | 10,650In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 23 A | 140 mOhms | 20 V | 2 V | 140 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: IRFI9640GPBF TTI: IRFI9640GPBF Vishay Semiconductors Availability: 700In StockMOSFETs TO220 200V 6.1A P-CH MOSFET | 700In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 6.1 A | 500 mOhms | 20 V | 4 V | 44 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
Mfr: SUP85N10-10-GE3 TTI: SUP85N10-10-GE3 Vishay / Siliconix Availability: 550In StockMOSFETs 100V 85A 250W 10.5mohm @ 10V | 550In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 85 A | 8.5 mOhms | 20 V | 1 V | 160 nC | - 55 C | + 175 C | 250 W | Enhancement | TrenchFET | Tube | ||||
Mfr: SI7137DP-T1-GE3 TTI: SI7137DP-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs -20V Vds 12V Vgs PowerPAK SO-8 | 15,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 20 V | 60 A | 1.95 mOhms | 12 V | 1.4 V | 390 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | SI7137DP-GE3 | |||
Mfr: SI4430BDY-T1-GE3 TTI: SI4430BDY-T1-GE3 Vishay / Siliconix Availability: 2,500In StockMOSFETs 30V 20A 3.0W 4.5mohm @ 10V | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 20 A | 4.5 mOhms | 20 V | 1 V | 36 nC | - 55 C | + 150 C | 3 W | Enhancement | TrenchFET | Reel | SI4430BDY-GE3 | |||
Mfr: IRF9Z24SPBF TTI: IRF9Z24SPBF Vishay Semiconductors Availability: 900In StockMOSFETs TO263 P-CH 60V 11A | 900In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 60 V | 11 A | 280 mOhms | 20 V | 4 V | 19 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | |||||
Mfr: SI4564DY-T1-GE3 TTI: SI4564DY-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs SO8 NPCH 40V 10A | 15,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel, P-Channel | 2 Channel | 40 V | 9.2 A, 10 A | 17.5 mOhms, 21 mOhms | 20 V | 800 mV, 1.2 V | 20.5 nC, 41.5 nC | - 55 C | + 150 C | 3.1 W, 3.2 W | Enhancement | TrenchFET | Reel | SI4542DY-T1-E3-S | |||
Mfr: SI8817DB-T2-E1 TTI: SI8817DB-T2-E1 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | 3,000In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 20 V | 2.9 A | 61 mOhms | 8 V | 1 V | 19 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: IRF9540PBF-BE3 TTI: IRF9540PBF-BE3 Vishay / Siliconix Availability: 1,450In StockMOSFETs TO220 100V 19A P-CH MOSFET | 1,450In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 19 A | 200 mOhms | 20 V | 4 V | 61 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRF9540PBF | ||||
Mfr: SI7820DN-T1-E3 TTI: SI7820DN-T1-E3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 200V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 200 V | 1.7 A | 240 mOhms | 20 V | 2 V | 12.1 nC | - 55 C | + 150 C | 1.5 W | Enhancement | TrenchFET | Reel | SI7820DN-T1 | |||
Mfr: SI2306BDS-T1-E3 TTI: SI2306BDS-T1-E3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V 4.0A 0.75W | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.16 A | 47 mOhms | 20 V | 1 V | 3 nC | - 55 C | + 150 C | 750 mW | Enhancement | TrenchFET | Reel | SI2306BDS-T1-BE3 SI2306BDS-E3 | |||
Mfr: IRF9Z30PBF TTI: IRF9Z30PBF Vishay Semiconductors Availability: 350In StockMOSFETs TO220 P-CH 50V 18A | 350In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 50 V | 18 A | 140 mOhms | 20 V | 4 V | 39 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF9Z30PBF-BE3 | ||||
Mfr: IRFU9120PBF TTI: IRFU9120PBF Vishay Semiconductors Availability: 3,000In StockMOSFETs P-Chan 100V 5.6 Amp | 3,000In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 100 V | 5.6 A | 600 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: IRFR9310PBF TTI: IRFR9310PBF Vishay Semiconductors Availability: 2,025In StockMOSFETs P-Chan 400V 1.8 Amp | 2,025In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 400 V | 1.8 A | 7 Ohms | 20 V | 4 V | 13 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | |||||
Mfr: IRFU320PBF TTI: IRFU320PBF Vishay Semiconductors Availability: 525In StockMOSFETs N-Chan 400V 3.1 Amp | 525In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 400 V | 3.1 A | 1.8 Ohms | 20 V | 2 V | 20 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: SI7540ADP-T1-GE3 TTI: SI7540ADP-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs -20V Vds 12V Vgs PowerPAK SO-8 | 15,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel, P-Channel | 2 Channel | 20 V | 6.1 A, 8 A | 15 mOhms, 28 mOhms | 12 V | 1.4 V | 18 nC, 32 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFU110PBF TTI: IRFU110PBF Vishay Semiconductors Availability: 3,900In StockMOSFETs TO251 100V 4.3A N-CH MOSFET | 3,900In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 100 V | 4.3 A | 540 mOhms | 20 V | 2 V | 8.3 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube |