Vishay - MOSFETs
7,513 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHP25N50E-BE3 TTI: SIHP25N50E-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 500V 26A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 26 A | 145 mOhms | - 30 V, 30 V | 4 V | 86 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | SIHP25N50E-GE3 | ||||
Mfr: SIRA00DP-T1-GE3 TTI: SIRA00DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 1mOhm@10V 60A N-Ch G-IV | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 100 A | 830 uOhms | - 16 V, 20 V | 1.1 V | 220 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA00DP-GE3 | |||
Mfr: SI7852DP-T1-E3 TTI: SI7852DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 7.6 A | 16.5 mOhms | - 20 V, 20 V | 2 V | 34 nC | - 55 C | + 150 C | 1.9 W | Enhancement | TrenchFET | Reel | SI7852DP-E3 | |||
Mfr: SIHH068N60E-T1-GE3 TTI: SIHH068N60E-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs PowerPAK 8 x 8 | 0In Stock | Si | SMD/SMT | PowerPAK-4 | N-Channel | 1 Channel | 600 V | 34 A | 68 mOhms | - 30 V, 30 V | 3 V | 80 nC | - 55 C | + 150 C | 202 W | Enhancement | Reel | |||||
Mfr: SI7439DP-T1-E3 TTI: SI7439DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -150V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 150 V | 5.2 A | 90 mOhms | - 20 V, 20 V | 2 V | 88 nC | - 55 C | + 150 C | 5.4 W | Enhancement | TrenchFET | Reel | SI7439DP-E3 | |||
Mfr: SIR880ADP-T1-GE3 TTI: SIR880ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 60 A | 5.2 mOhms | - 20 V, 20 V | 1.5 V | 72 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR880ADP-GE3 | |||
0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 8 A | 19.2 mOhms | - 20 V, 20 V | 1 V | 46 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SI7101DN-T1-GE3 TTI: SI7101DN-T1-GE3 Vishay Semiconductors MOSFETs -30V Vds 25V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 35 A | 7.2 mOhms | - 25 V, 25 V | 2.5 V | 68 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI4435DDY-T1-E3 TTI: SI4435DDY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | P-Channel | 1 Channel | 30 V | 11.4 A | 24 mOhms | - 20 V, 20 V | 3 V | 32 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4435DDY-E3 | ||||
Mfr: SI4931DY-T1-GE3 TTI: SI4931DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -12V Vds 8V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 12 V | 8.9 A | 18 mOhms | - 8 V, 8 V | 400 mV | 52 nC | - 55 C | + 150 C | 2 W | Enhancement | TrenchFET | Reel | SI4931DY-GE3 | |||
Mfr: SI7617DN-T1-GE3 TTI: SI7617DN-T1-GE3 Vishay Semiconductors MOSFETs -30V Vds 25V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 35 A | 12.3 mOhms | - 25 V, 25 V | 1.2 V | 39 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7617DN-GE3 | |||
Mfr: IRFU120PBF TTI: IRFU120PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO251 100V 7.7A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 100 V | 7.7 A | 270 mOhms | - 20 V, 20 V | 2 V | 16 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: SI1467DH-T1-GE3 TTI: SI1467DH-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 2.7 A | 150 mOhms | - 8 V, 8 V | 1 V | 13.5 nC | - 55 C | + 150 C | 2.8 W | Enhancement | TrenchFET | Reel | SI1467DH-T1-BE3 SI1405BDH-T1-GE3 SI1405DL-T1-GE3 | |||
Mfr: SIA400EDJ-T1-GE3 TTI: SIA400EDJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 12V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 30 V | 12 A | 19 mOhms | - 12 V, 12 V | 600 mV | 36 nC | - 55 C | + 150 C | 19.2 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA400EDJ-GE3 | |||
Mfr: SI3430DV-T1-E3 TTI: SI3430DV-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs TSOP6 100V 2.4A N-CH MOSFET | 0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 100 V | 2.4 A | 170 mOhms | - 20 V, 20 V | 2 V | 8.2 nC | - 55 C | + 150 C | 2 W | Enhancement | TrenchFET | Reel | SI3430DV-T1-BE3 SI3430DV-E3 | |||
Mfr: SI2328DS-T1-E3 TTI: SI2328DS-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 1.15 A | 250 mOhms | - 20 V, 20 V | 4 V | 3.3 nC | - 55 C | + 150 C | 730 mW | Enhancement | TrenchFET | Reel | SI2328DS-T1-BE3 SI2328DS-E3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 17 A | 180 mOhms | - 10 V, 10 V | 2 V | 66 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRL640PBF-BE3 | |||||
Mfr: SI2333CDS-T1-GE3 TTI: SI2333CDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 12V 5.1A 2.5W 35 mohms @ 4.5V | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 12 V | 7.1 A | 35 mOhms | - 8 V, 8 V | 1 V | 9 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2333CDS-T1-BE3 SI2333CDS-GE3 | |||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 2.3 A | 234 mOhms | - 20 V, 20 V | 1.2 V | 10.4 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2324DS-T1-BE3 | ||||
Mfr: SIHFL9110TR-GE3 TTI: SIHFL9110TR-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 100V Vds 20V Vgs SOT-223 | 0In Stock | Si | SMD/SMT | SOT-223-3 | P-Channel | 1 Channel | 100 V | 1.1 A | 1.2 Ohms | - 20 V, 20 V | 4 V | 8.7 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | |||||
Mfr: SI8808DB-T2-E1 TTI: SI8808DB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 30 V | 2.5 A | 95 mOhms | - 8 V, 8 V | 400 mV | 10 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 2.7 A | 155 mOhms | - 12 V, 12 V | 1.5 V | 8.5 nC | - 55 C | + 150 C | 2.78 W | Enhancement | TrenchFET | Reel | SI1469DH-T1-BE3 SI1469DH-E3 | ||||
Mfr: SUD50P04-08-GE3 TTI: SUD50P04-08-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V 50A P-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 50 A | 8.1 mOhms | - 20 V, 20 V | 2.5 V | 159 nC | - 55 C | + 150 C | 73.5 W | Enhancement | TrenchFET | Reel | SUD50P04-08-BE3 | |||
Mfr: SIHG47N65E-GE3 TTI: SIHG47N65E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 650V Vds 30V Vgs TO-247AC | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 47 A | 72 mOhms | - 30 V, 30 V | 4 V | 182 nC | - 55 C | + 150 C | 417 W | Enhancement | Tube | |||||
Mfr: SIHB17N80E-GE3 TTI: SIHB17N80E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 800V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 15 A | 290 mOhms | - 30 V, 30 V | 2 V | 122 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel |
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