Vishay - MOSFETs
7,440 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI4435FDY-T1-GE3 TTI: SI4435FDY-T1-GE3 Vishay / Siliconix Availability: 112,500In StockMOSFETs -30V Vds 20V Vgs SO-8 | 112,500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 12.6 A | 30 mOhms | - 20 V, 20 V | 2.2 V | 13.5 nC | - 55 C | + 150 C | 4.8 W | Enhancement | Reel | |||||
Mfr: SIS434DN-T1-GE3 TTI: SIS434DN-T1-GE3 Vishay Semiconductors Availability: 108,000In Stock21,000 On Order Expected 08-Jul-27 MOSFETs 40V Vds 20V Vgs PowerPAK 1212-8 | 108,000In Stock21,000 On Order Expected 08-Jul-27 | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 35 A | 6.3 mOhms | - 20 V, 20 V | 1.2 V | 40 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS434DN-GE3 | |||
Mfr: IRFS9N60APBF TTI: IRFS9N60APBF Vishay Semiconductors Availability: 8,050In StockMOSFETs TO263 600V 9.2A N-CH MOSFET | 8,050In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 9.2 A | 750 mOhms | - 30 V, 30 V | 2 V | 49 nC | - 55 C | + 150 C | 170 W | Enhancement | Tube | |||||
Mfr: SI7216DN-T1-E3 TTI: SI7216DN-T1-E3 Vishay Semiconductors Availability: 15,000In StockMOSFETs 40V Vds 20V Vgs PowerPAK 1212-8 | 15,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 40 V | 6 A | 32 mOhms | - 20 V, 20 V | 1 V | 19 nC | - 50 C | + 150 C | 20.8 W | Enhancement | TrenchFET | Reel | SI7216DN-E3 | |||
Mfr: SI2309CDS-T1-BE3 TTI: SI2309CDS-T1-BE3 Vishay / Siliconix Availability: 81,000In StockMOSFETs SOT23 P-CH 60V 1.2A | 81,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 60 V | 1.6 A | 345 mOhms | - 20 V, 20 V | 3 V | 2.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2309CDS-T1-GE3 | ||||
Mfr: SI7252ADP-T1-GE3 TTI: SI7252ADP-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs PWRPK 100V 28.7A | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 100 V | 28.7 A | 18.6 mOhms | - 20 V, 20 V | 4 V | 17.4 nC | - 55 C | + 150 C | 33.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRF9530PBF-BE3 TTI: IRF9530PBF-BE3 Vishay / Siliconix Availability: 5,550In StockMOSFETs TO220 100V 12A P-CH MOSFET | 5,550In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 12 A | 300 mOhms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF9530PBF | ||||
Mfr: SIB452DK-T1-GE3 TTI: SIB452DK-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 190V Vds 16V Vgs PowerPAK SC-75 | 3,000In Stock | Si | SMD/SMT | SC-75-6 | N-Channel | 1 Channel | 190 V | 1.5 A | 2.4 Ohms | - 16 V, 16 V | 600 mV | 6.5 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET, PowerPAK | Reel | SIB452DK-GE3 | |||
700In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 10 A | 200 mOhms | - 20 V, 20 V | 4 V | 11 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRFZ14PBF-BE3 | |||||
Mfr: SI6562CDQ-T1-GE3 TTI: SI6562CDQ-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -20V Vds 12V Vgs TSSOP-8 N&P PAIR | 6,000In Stock | Si | SMD/SMT | TSSOP-8 | N-Channel, P-Channel | 2 Channel | 20 V | 6.1 A, 6.7 A | 22 mOhms, 30 mOhms | - 8 V, 8 V | 600 mV | 15 nC, 34 nC | - 55 C | + 150 C | 1.6 W, 1.7 W | Enhancement | TrenchFET | Reel | SI6562CDQ-GE3 | |||
Mfr: SIHG25N50E-GE3 TTI: SIHG25N50E-GE3 Vishay / Siliconix Availability: 500In StockMOSFETs 500V Vds 30V Vgs TO-247AC | 500In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 500 V | 26 A | 145 mOhms | - 30 V, 30 V | 4 V | 57 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | |||||
Mfr: IRF520PBF-BE3 TTI: IRF520PBF-BE3 Vishay / Siliconix Availability: 1,850In Stock1,000 On Order Expected 27-May-27 MOSFETs TO220 100V 9.2A N-CH MOSFET | 1,850In Stock1,000 On Order Expected 27-May-27 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 9.2 A | 270 mOhms | - 20 V, 20 V | 4 V | 16 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | IRF520PBF | ||||
Mfr: SI1902CDL-T1-BE3 TTI: SI1902CDL-T1-BE3 Vishay / Siliconix Availability: 36,000In Stock48,000 On Order Expected 21-Sep-26 MOSFETs SOT363 2NCH 20V 1A | 36,000In Stock48,000 On Order Expected 21-Sep-26 | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 1.1 A | 235 mOhms | - 12 V, 12 V | 1.5 V | 2 nC | - 55 C | + 150 C | 420 mW | Enhancement | TrenchFET | Reel | SI1902CDL-T1-GE3 | |||
Mfr: SI7115DN-T1-GE3 TTI: SI7115DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -150V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 150 V | 8.9 A | 295 mOhms | - 20 V, 20 V | 4 V | 27.5 nC | - 50 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7115DN-GE3 | |||
Mfr: SI1922EDH-T1-GE3 TTI: SI1922EDH-T1-GE3 Vishay Semiconductors Availability: 57,000In StockMOSFETs 20V Vds 8V Vgs SC70-6 | 57,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 1.3 A | 198 mOhms | - 8 V, 8 V | 1 V | 2.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1922EDH-T1-BE3 SI1988DH-T1-GE3 | |||
Mfr: SI4401DDY-T1-GE3 TTI: SI4401DDY-T1-GE3 Vishay Semiconductors Availability: 22,500In StockMOSFETs -40V Vds 20V Vgs SO-8 | 22,500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 40 V | 16.1 A | 15 mOhms | - 20 V, 20 V | 1.2 V | 64 nC | - 55 C | + 150 C | 6.3 W | Enhancement | TrenchFET | Reel | SI4401DDY-GE3 | |||
Mfr: IRFP350PBF TTI: IRFP350PBF Vishay Semiconductors Availability: 500In StockMOSFETs TO247 400V 16A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 400 V | 16 A | 300 mOhms | - 20 V, 20 V | 2 V | 150 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SI7149ADP-T1-GE3 TTI: SI7149ADP-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -30V Vds 25V Vgs PowerPAK SO-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 50 A | 5.2 mOhms | - 25 V, 25 V | 2.5 V | 90 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI4214DDY-T1-GE3 TTI: SI4214DDY-T1-GE3 Vishay Semiconductors Availability: 57,500In StockMOSFETs 30V Vds 20V Vgs SO-8 | 57,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 8.5 A | 19.5 mOhms | - 20 V, 20 V | 1.2 V | 14.5 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4920DY-T1-E3-S | |||
Mfr: IRF840ASTRLPBF TTI: IRF840ASTRLPBF Vishay Semiconductors Availability: 8,000In Stock6,400 On Order Expected MOSFETs N-Chan 500V 8.0 Amp | 8,000In Stock6,400 On Order Expected | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 30 V, 30 V | 2 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: IRF640PBF-BE3 TTI: IRF640PBF-BE3 Vishay / Siliconix Availability: 38,950In StockMOSFETs TO220 200V 18A N-CH MOSFET | 38,950In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 18 A | 180 mOhms | - 20 V, 20 V | 4 V | 7 nC | - 55 C | + 150 C | 125 mW | Enhancement | Tube | IRF640PBF | ||||
Mfr: IRFU420PBF TTI: IRFU420PBF Vishay Semiconductors Availability: 9,000In StockMOSFETs N-Chan 500V 2.4 Amp | 9,000In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 500 V | 2.4 A | 3 Ohms | - 20 V, 20 V | 2 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: IRFPC60LCPBF TTI: IRFPC60LCPBF Vishay Semiconductors Availability: 425In StockMOSFETs TO247 600V 16A N-CH MOSFET | 425In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 16 A | 400 mOhms | - 30 V, 30 V | 2 V | 120 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: IRFP9240PBF TTI: IRFP9240PBF Vishay Semiconductors Availability: 1,950In StockMOSFETs TO247 200V 12A P-CH MOSFET | 1,950In Stock | Si | Through Hole | TO-247AC-3 | P-Channel | 1 Channel | 200 V | 12 A | 500 mOhms | - 20 V, 20 V | 2 V | 44 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | |||||
Mfr: SIA910EDJ-T1-GE3 TTI: SIA910EDJ-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 12V Vds 8V Vgs PowerPAK SC-70 | 3,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 2 Channel | 12 V | 4.5 A | 28 mOhms | - 8 V, 8 V | 400 mV | 16 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA910EDJ-GE3 |
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