Vishay - MOSFETs
7,440 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SQJB00EP-T1-BE3 TTI: SQJB00EP-T1-BE3 Vishay Availability: 6,000In StockMOSFETs PPAKSO8 2NCH 60V 30A | 6,000In Stock | Si | Reel | |||||||||||||||||||
800In Stock | Si | Reel | ||||||||||||||||||||
800In Stock | Si | Reel | ||||||||||||||||||||
Mfr: SI4431CDY-T1-GE3 TTI: SI4431CDY-T1-GE3. Vishay / Siliconix Availability: 2,325In StockCut Tape MOSFETs 30V 9.0A 4.2W 32mohm @ 10V | 2,325In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 9 A | 32 mOhms | - 20 V, 20 V | 1 V | 38 nC | - 55 C | + 150 C | 4.2 W | Enhancement | Cut Tape | SI4431CDY-GE3 | ||||
Mfr: SQ3989EV-T1-BE3 TTI: SQ3989EV-T1-BE3 Vishay Availability: 12,000In StockMOSFETs TSOP6 2PCH 30V 2.5A | 12,000In Stock | Si | Reel | |||||||||||||||||||
Mfr: SQJ858AEP-T1-BE3 TTI: SQJ858AEP-T1-BE3 Vishay Availability: 15,000In StockMOSFETs PPAKSO8 N-CH 40V 58A | 15,000In Stock | Si | Reel | |||||||||||||||||||
Mfr: SQJ154EP-T1-GE3 TTI: SQJ154EP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs PPAKSO8 N-CH 40V 243A | 3,000In Stock | Si | SMD/SMT | PowerPAK SO-8L | N-Channel | 1 Channel | 40 V | 243 A | 2.5 mOhms | - 20 V, 20 V | 3.5 V | 43 nC | - 55 C | + 175 C | 214 W | Enhancement | ||||||
Mfr: SQS142ENW-T1-GE3 TTI: SQS142ENW-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs PPAK1218 N-CH 40V 110A | 3,000In Stock | Si | SMD/SMT | PowerPAK 1212-8SLW | N-Channel | 1 Channel | 40 V | 110 A | 4.5 mOhms | - 20 V, 20 V | 3.3 V | 23 nC | - 55 C | + 175 C | 113 W | Enhancement | ||||||
2,500In Stock | Si | Reel | ||||||||||||||||||||
7,500In Stock | Si | Reel | ||||||||||||||||||||
Mfr: SQJA02EP-T1-GE3 TTI: SQJA02EP-T1-GE3 Vishay / Siliconix Availability: 27,000In StockMOSFETs PPAKSO8 N-CH 60V 60A | 27,000In Stock | Si | SMD/SMT | PowerPAK-SO-8L-4 | Reel | |||||||||||||||||
Mfr: SI1032R-T1-GE3. TTI: SI1032R-T1-GE3. Vishay Availability: 350In StockLimited Supply Cut Tape MOSFETs SOT416 N-CH 20V .14A | 350In StockLimited Supply | Si | Cut Tape | |||||||||||||||||||
Mfr: SQD50P04-13L-T4GE3 TTI: SQD50P04-13L-T4GE3 Vishay / Siliconix Availability: 2,500In StockMOSFETs TO252 P-CH 40V 50A | 2,500In Stock | Si | Reel | |||||||||||||||||||
Mfr: SI7818DN-T1-GE3 TTI: SI7818DN-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 150V Vds 20V Vgs PowerPAK 1212-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 150 V | 2.2 A | 135 mOhms | - 20 V, 20 V | 1 V | 20 nC | - 55 C | + 150 C | 1.5 W | Enhancement | TrenchFET | Reel | SI7818DN-GE3 | |||
Mfr: SQD23N06-31L-GE3 TTI: SQD23N06-31L-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs RECOMMENDED ALT SQD2 | 2,000In Stock | Si | AEC-Q100 | TrenchFET | Reel | |||||||||||||||||
Mfr: SQD50N10-8M9L-GE3 TTI: SQD50N10-8M9L-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs RECOMMENDED ALT SQD5 | 2,000In Stock | Si | AEC-Q101 | TrenchFET | Reel | |||||||||||||||||
Mfr: SQJ500AEP-T1-GE3 TTI: SQJ500AEP-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs PPAKSO8 NPCH 40V 30A | 3,000In Stock | Si | Reel | |||||||||||||||||||
Mfr: SI9926CDY-T1-GE3 TTI: SI9926CDY-T1-GE3. Vishay / Siliconix Availability: 2,680In StockCut Tape MOSFETs SOIC8 2NCH 20V 8A | 2,680In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 20 V | 8 A | 18 mOhms | - 12 V, 12 V | 600 mV | 22 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Cut Tape | |||||
Mfr: SQJ416EP-T1-BE3 TTI: SQJ416EP-T1-BE3 Vishay Availability: 6,000In StockMOSFETs SOT669 100V 27A N-CH MOSFET | 6,000In Stock | Si | Reel | |||||||||||||||||||
Mfr: SIR882ADP-T1-GE3 TTI: SIR882ADP-T1-GE3. Vishay / Siliconix Availability: 2,230In StockCut Tape MOSFETs 100V 8.7mOhm@10V 60A N-Ch MV T-FET | 2,230In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 60 A | 7.2 mOhms | - 20 V, 20 V | 1.2 V | 60 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET, PowerPAK | Cut Tape | SIR882ADP-GE3 | |||
Mfr: SI2319CDS-T1-GE3 TTI: SI2319CDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -40V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 40 V | 4.4 A | 77 mOhms | - 20 V, 20 V | 1.2 V | 21 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2319CDS-T1-BE3 SI2319CDS-GE3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 18 A | 180 mOhms | - 20 V, 20 V | 4 V | 70 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF640PBF-BE3 | |||||
Mfr: 2N7002K-T1-GE3 TTI: 2N7002K-T1-GE3 Vishay Semiconductors Availability: 0In Stock66,000 On Order Expected 11-Nov-26 MOSFETs 60V Vds 20V Vgs SOT-23 | 0In Stock66,000 On Order Expected 11-Nov-26 | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 300 mA | 2 Ohms | - 20 V, 20 V | 1 V | 400 pC | - 55 C | + 150 C | 350 mW | Enhancement | Reel | 2N7002K-GE3 | ||||
Mfr: SI2308CDS-T1-GE3 TTI: SI2308CDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 2.6 A | 200 mOhms | - 20 V, 20 V | 3 V | 2 nC | - 55 C | + 150 C | 1.6 W | Enhancement | Reel | |||||
Mfr: IRF540PBF-BE3 TTI: IRF540PBF-BE3 Vishay / Siliconix Availability: 0In Stock10,000 On Order Expected MOSFETs TO220 100V 28A N-CH MOSFET | 0In Stock10,000 On Order Expected | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 28 A | 77 mOhms | - 20 V, 20 V | 4 V | 72 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRF540PBF |