Vishay - MOSFETs
7,551 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI4202DY-T1-GE3 TTI: SI4202DY-T1-GE3 Vishay Semiconductors Availability: 0In Stock12,500 On Order Expected 02-Dec-26 MOSFETs 30V Vds 20V Vgs SO-8 | 0In Stock12,500 On Order Expected 02-Dec-26 | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 12.1 A | 14 mOhms | 20 V | 1 V | 17 nC | - 55 C | + 150 C | 3.7 W | Enhancement | TrenchFET | Reel | SI4202DY-GE3 | |||
Mfr: SI7113ADN-T1-GE3 TTI: SI7113ADN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -100V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 100 V | 10.8 A | 132 mOhms | 20 V | 2.6 V | 10.9 nC | - 55 C | + 150 C | 27.8 W | Enhancement | Reel | |||||
Mfr: SI2302CDS-T1-BE3 TTI: SI2302CDS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT23 N-CH 20V 2.6A | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | TrenchFET | Reel | SI2302CDS-T1-GE3 | |||
Mfr: SI2387DS-T1-GE3 TTI: SI2387DS-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT23 P-CH 80V 2.1A | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 80 V | 3 A | 242 mOhms | 20 V | 2.5 V | 10.2 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRF520PBF-BE3 TTI: IRF520PBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 100V 9.2A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 9.2 A | 270 mOhms | 20 V | 4 V | 16 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | IRF520PBF | ||||
Mfr: SIB452DK-T1-GE3 TTI: SIB452DK-T1-GE3 Vishay Semiconductors Availability: 0In Stock18,000 On Order Expected 20-Jun-29 MOSFETs 190V Vds 16V Vgs PowerPAK SC-75 | 0In Stock18,000 On Order Expected 20-Jun-29 | Si | SMD/SMT | SC-75-6 | N-Channel | 1 Channel | 190 V | 1.5 A | 2.4 Ohms | 16 V | 600 mV | 6.5 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET, PowerPAK | Reel | SIB452DK-GE3 | |||
Mfr: SIS862ADN-T1-GE3 TTI: SIS862ADN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs PPAK1212 N-CH 60V 15.8A | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 60 V | 52 A | 11 mOhms | 20 V | 1 V | 19.8 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI2336DS-T1-BE3 TTI: SI2336DS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CHANNEL 30V (D-S) | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 5.2 A | 42 mOhms | 8 V | 1 V | 10 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI2336DS-T1-GE3 | |||
Mfr: IRFP350PBF TTI: IRFP350PBF Vishay Semiconductors Availability: 0In Stock1,475 On Order Expected 04-Aug-27 MOSFETs TO247 400V 16A N-CH MOSFET | 0In Stock1,475 On Order Expected 04-Aug-27 | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 400 V | 16 A | 300 mOhms | 20 V | 2 V | 150 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SI7489DP-T1-E3 TTI: SI7489DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -100V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 100 V | 28 A | 41 mOhms | 20 V | 1 V | 106 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7489DP-E3 | |||
Mfr: SI7469DP-T1-E3 TTI: SI7469DP-T1-E3 Vishay Semiconductors Availability: 0In Stock63,000 On Order Expected 14-Sep-27 MOSFETs -80V Vds 20V Vgs PowerPAK SO-8 | 0In Stock63,000 On Order Expected 14-Sep-27 | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 80 V | 28 A | 29 mOhms | 20 V | 3 V | 160 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7469DP-E3 | |||
Mfr: IRFI9634GPBF TTI: IRFI9634GPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 250V 4.1A P-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 250 V | 4.1 A | 1 Ohms | 20 V | 4 V | 38 nC | - 55 C | + 150 C | 35 W | Enhancement | Tube | |||||
Mfr: IRF9520PBF-BE3 TTI: IRF9520PBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 100V 6.8A P-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 6.8 A | 600 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | IRF9520PBF | ||||
Mfr: SI7288DP-T1-GE3 TTI: SI7288DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 40 V | 20 A | 19 mOhms | 20 V | 1.2 V | 15 nC | - 55 C | + 150 C | 15.6 W | Enhancement | TrenchFET | Reel | SI7288DP-GE3 | |||
Mfr: SIA910EDJ-T1-GE3 TTI: SIA910EDJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 12V Vds 8V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 2 Channel | 12 V | 4.5 A | 28 mOhms | 8 V | 400 mV | 16 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA910EDJ-GE3 | |||
Mfr: SI4564DY-T1-GE3 TTI: SI4564DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs SO8 NPCH 40V 10A | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel, P-Channel | 2 Channel | 40 V | 9.2 A, 10 A | 17.5 mOhms, 21 mOhms | 20 V | 800 mV, 1.2 V | 20.5 nC, 41.5 nC | - 55 C | + 150 C | 3.1 W, 3.2 W | Enhancement | TrenchFET | Reel | SI4542DY-T1-E3-S | |||
Mfr: SUD50P10-43L-E3 TTI: SUD50P10-43L-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V 37A 136W 43mohm @ 10V | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 37.1 A | 43 mOhms | 20 V | 1 V | 106 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD50P10-43L-BE3 | |||
0In Stock10,000 On Order Expected | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 3.3 A | 1.5 Ohms | 20 V | 4 V | 8.2 nC | - 55 C | + 150 C | 36 W | Enhancement | Tube | IRF610PBF-BE3 | |||||
Mfr: SIA436DJ-T1-GE3 TTI: SIA436DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 8V Vds 5V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 8 V | 12 A | 9.4 mOhms | 5 V | 350 mV | 15 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA436DJ-GE3 | |||
Mfr: SI3585CDV-T1-GE3 TTI: SI3585CDV-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs TSOP-6 N&P PAIR | 0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel, P-Channel | 2 Channel | 20 V | 2.1 A, 3.9 A | 58 mOhms, 195 mOhms | 8 V | 600 mV | 3.2 nC, 6 nC | - 55 C | + 150 C | 1.3 W, 1.4 W | Enhancement | TrenchFET | Reel | SI3585CDV-GE3 | |||
Mfr: SUM60061EL-GE3 TTI: SUM60061EL-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO263 P-CH 80V 150A | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 80 V | 150 A | 8.6 mOhms | 20 V | 2.5 V | 218 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI4490DY-T1-GE3 TTI: SI4490DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 200 V | 4 A | 80 mOhms | 20 V | 2 V | 42 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4490DY-GE3 | |||
Mfr: SI7489DP-T1-GE3 TTI: SI7489DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -100V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 100 V | 28 A | 41 mOhms | 20 V | 1 V | 106 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7489DP-GE3 | |||
Mfr: IRFB9N60APBF TTI: IRFB9N60APBF Vishay Semiconductors Availability: 0In Stock900 On Order Expected 25-Nov-26 MOSFETs TO220 600V 9.2A N-CH MOSFET | 0In Stock900 On Order Expected 25-Nov-26 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 9.2 A | 750 mOhms | 30 V | 4 V | 49 nC | - 55 C | + 150 C | 170 W | Enhancement | Tube | IRFB9N60APBF-BE3 | ||||
Mfr: SI2392ADS-T1-GE3 TTI: SI2392ADS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 3.1 A | 102 mOhms | 20 V | 3 V | 2.9 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2392ADS-T1-BE3 |