Vishay - MOSFETs
7,440 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHG25N50E-GE3 TTI: SIHG25N50E-GE3 Vishay / Siliconix Availability: 500In StockMOSFETs 500V Vds 30V Vgs TO-247AC | 500In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 500 V | 26 A | 145 mOhms | - 30 V, 30 V | 4 V | 57 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | |||||
Mfr: IRF520PBF-BE3 TTI: IRF520PBF-BE3 Vishay / Siliconix Availability: 1,850In Stock1,000 On Order Expected 27-May-27 MOSFETs TO220 100V 9.2A N-CH MOSFET | 1,850In Stock1,000 On Order Expected 27-May-27 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 9.2 A | 270 mOhms | - 20 V, 20 V | 4 V | 16 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | IRF520PBF | ||||
Mfr: SI1902CDL-T1-BE3 TTI: SI1902CDL-T1-BE3 Vishay / Siliconix Availability: 36,000In Stock48,000 On Order Expected 21-Sep-26 MOSFETs SOT363 2NCH 20V 1A | 36,000In Stock48,000 On Order Expected 21-Sep-26 | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 1.1 A | 235 mOhms | - 12 V, 12 V | 1.5 V | 2 nC | - 55 C | + 150 C | 420 mW | Enhancement | TrenchFET | Reel | SI1902CDL-T1-GE3 | |||
Mfr: SI7115DN-T1-GE3 TTI: SI7115DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -150V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 150 V | 8.9 A | 295 mOhms | - 20 V, 20 V | 4 V | 27.5 nC | - 50 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7115DN-GE3 | |||
Mfr: SI1922EDH-T1-GE3 TTI: SI1922EDH-T1-GE3 Vishay Semiconductors Availability: 57,000In StockMOSFETs 20V Vds 8V Vgs SC70-6 | 57,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 1.3 A | 198 mOhms | - 8 V, 8 V | 1 V | 2.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1922EDH-T1-BE3 SI1988DH-T1-GE3 | |||
Mfr: SI4401DDY-T1-GE3 TTI: SI4401DDY-T1-GE3 Vishay Semiconductors Availability: 22,500In StockMOSFETs -40V Vds 20V Vgs SO-8 | 22,500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 40 V | 16.1 A | 15 mOhms | - 20 V, 20 V | 1.2 V | 64 nC | - 55 C | + 150 C | 6.3 W | Enhancement | TrenchFET | Reel | SI4401DDY-GE3 | |||
Mfr: IRFP350PBF TTI: IRFP350PBF Vishay Semiconductors Availability: 500In StockMOSFETs TO247 400V 16A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 400 V | 16 A | 300 mOhms | - 20 V, 20 V | 2 V | 150 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SI7149ADP-T1-GE3 TTI: SI7149ADP-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -30V Vds 25V Vgs PowerPAK SO-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 50 A | 5.2 mOhms | - 25 V, 25 V | 2.5 V | 90 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI4214DDY-T1-GE3 TTI: SI4214DDY-T1-GE3 Vishay Semiconductors Availability: 57,500In StockMOSFETs 30V Vds 20V Vgs SO-8 | 57,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 8.5 A | 19.5 mOhms | - 20 V, 20 V | 1.2 V | 14.5 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4920DY-T1-E3-S | |||
Mfr: IRF840ASTRLPBF TTI: IRF840ASTRLPBF Vishay Semiconductors Availability: 8,000In Stock6,400 On Order Expected MOSFETs N-Chan 500V 8.0 Amp | 8,000In Stock6,400 On Order Expected | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 30 V, 30 V | 2 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: IRF640PBF-BE3 TTI: IRF640PBF-BE3 Vishay / Siliconix Availability: 38,950In StockMOSFETs TO220 200V 18A N-CH MOSFET | 38,950In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 18 A | 180 mOhms | - 20 V, 20 V | 4 V | 7 nC | - 55 C | + 150 C | 125 mW | Enhancement | Tube | IRF640PBF | ||||
Mfr: SI7143DP-T1-GE3 TTI: SI7143DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 35 A | 10 mOhms | - 20 V, 20 V | 2.8 V | 47.5 nC | - 55 C | + 150 C | 35.7 W | Enhancement | TrenchFET | Reel | SI7143DP-GE3 | |||
Mfr: SI9933CDY-T1-GE3 TTI: SI9933CDY-T1-GE3 Vishay Semiconductors Availability: 7,500In StockMOSFETs -20V Vds 12V Vgs SO-8 | 7,500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 20 V | 4 A | 58 mOhms | - 12 V, 12 V | 600 mV | 17 nC | - 50 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI9933CDY-GE3 | |||
Mfr: IRFP054PBF TTI: IRFP054PBF Vishay Semiconductors Availability: 21,500In StockMOSFETs TO247 N-CH 60V 70A | 21,500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 60 V | 70 A | 14 mOhms | - 20 V, 20 V | 2 V | 160 nC | - 55 C | + 175 C | 230 W | Enhancement | Tube | |||||
Mfr: IRF9640STRLPBF TTI: IRF9640STRLPBF Vishay Semiconductors Availability: 6,400In StockMOSFETs TO263 200V 11A P-CH MOSFET | 6,400In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | - 20 V, 20 V | 4 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: SI2371EDS-T1-BE3 TTI: SI2371EDS-T1-BE3 Vishay / Siliconix Availability: 3,000In Stock15,000 On Order Expected 05-Jun-26 MOSFETs SOT23 P-CH 30V 3.7A | 3,000In Stock15,000 On Order Expected 05-Jun-26 | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 4.8 A | 45 mOhms | - 12 V, 12 V | 1.5 V | 10.6 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2371EDS-T1-GE3 | ||||
Mfr: IRFP250PBF TTI: IRFP250PBF Vishay Semiconductors Availability: 875In StockMOSFETs TO247 200V 30A N-CH MOSFET | 875In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 30 A | 85 mOhms | - 20 V, 20 V | 2 V | 140 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SIS412DN-T1-GE3 TTI: SIS412DN-T1-GE3 Vishay Semiconductors Availability: 27,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 27,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 12 A | 24 mOhms | - 10 V, 10 V | 1 V | 8 nC | - 55 C | + 150 C | 10 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS412DN-GE3 | |||
Mfr: SI2333DDS-T1-BE3 TTI: SI2333DDS-T1-BE3 Vishay / Siliconix Availability: 18,000In Stock45,000 On Order Expected 12-May-27 MOSFETs SOT23 P-CH 12V 5A | 18,000In Stock45,000 On Order Expected 12-May-27 | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 12 V | 6 A | 23 mOhms | - 8 V, 8 V | 1 V | 9 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2333DDS-T1-GE3 | ||||
Mfr: IRFL9110TRPBF TTI: IRFL9110TRPBF Vishay Semiconductors Availability: 2,500In StockMOSFETs P-Chan 100V 1.1 Amp | 2,500In Stock | Si | SMD/SMT | SOT-223-4 | P-Channel | 1 Channel | 100 V | 1.1 A | 1.2 Ohms | - 20 V, 20 V | 4 V | 8.7 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL9110TRPBF-BE3 | ||||
Mfr: IRF740PBF-BE3 TTI: IRF740PBF-BE3 Vishay / Siliconix Availability: 7,000In StockMOSFETs TO220 400V 10A N-CH MOSFET | 7,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | - 20 V, 20 V | 4 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF740PBF | ||||
Mfr: SISH617DN-T1-GE3 TTI: SISH617DN-T1-GE3 Vishay Semiconductors Availability: 42,000In StockMOSFETs -30V Vds 25V Vgs PowerPAK 1212-8 | 42,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 35 A | 12.3 mOhms | - 25 V, 25 V | 2.5 V | 59 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRFP460LCPBF TTI: IRFP460LCPBF Vishay Semiconductors Availability: 875In StockMOSFETs TO247 500V 20A N-CH MOSFET | 875In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 20 A | 270 mOhms | - 20 V, 20 V | 2 V | 120 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: SUM110P06-07L-E3 TTI: SUM110P06-07L-E3 Vishay Semiconductors Availability: 5,600In StockMOSFETs 60V 110A 375W | 5,600In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 60 V | 110 A | 6.9 mOhms | - 20 V, 20 V | 1 V | 230 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | SUM110P06-07L | |||
Mfr: SI1317DL-T1-GE3 TTI: SI1317DL-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs -20V Vds 8V Vgs SC70-3 | 9,000In Stock | Si | SMD/SMT | SOT-323-3 | P-Channel | 1 Channel | 20 V | 1.4 A | 150 mOhms | - 8 V, 8 V | 800 mV | 4.3 nC | - 50 C | + 150 C | 280 mW | Enhancement | TrenchFET | Reel | SI1317DL-T1-BE3 SI1307EDL-T1-GE3 |
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