Vishay - MOSFETs
7,529 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI4840BDY-T1-GE3 TTI: SI4840BDY-T1-GE3 Vishay Semiconductors Availability: 7,500In StockMOSFETs 40V Vds 20V Vgs SO-8 | 7,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 19 A | 9 mOhms | 20 V | 1 V | 50 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4840BDY-GE3 | |||
Mfr: SI7216DN-T1-E3 TTI: SI7216DN-T1-E3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 40V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 40 V | 6 A | 32 mOhms | 20 V | 1 V | 19 nC | - 50 C | + 150 C | 20.8 W | Enhancement | TrenchFET | Reel | SI7216DN-E3 | |||
Mfr: SI2309CDS-T1-BE3 TTI: SI2309CDS-T1-BE3 Vishay / Siliconix Availability: 54,000In StockMOSFETs SOT23 P-CH 60V 1.2A | 54,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 60 V | 1.6 A | 345 mOhms | 20 V | 3 V | 2.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2309CDS-T1-GE3 | ||||
Mfr: SIR186LDP-T1-RE3 TTI: SIR186LDP-T1-RE3 Vishay / Siliconix Availability: 48,000In Stock45,000 On Order Expected MOSFETs PPAKSO8 N-CH 60V 23.8A | 48,000In Stock45,000 On Order Expected | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | 80.3 A | 4.4 mOhms | 20 V | 2.5 V | 31.5 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI4204DY-T1-GE3 TTI: SI4204DY-T1-GE3 Vishay Semiconductors Availability: 20,000In StockMOSFETs 20V Vds 20V Vgs SO-8 | 20,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 20 V | 19.8 A | 4.6 mOhms | 20 V | 1 V | 30 nC | - 55 C | + 150 C | 3.25 W | Enhancement | TrenchFET | Reel | SI4204DY-GE3 | |||
Mfr: SI3433CDV-T1-GE3 TTI: SI3433CDV-T1-GE3 Vishay Semiconductors Availability: 3,000In Stock18,000 On Order Expected 06-Oct-27 MOSFETs -20V Vds 8V Vgs TSOP-6 | 3,000In Stock18,000 On Order Expected 06-Oct-27 | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 6 A | 38 mOhms | 8 V | 1 V | 18 nC | - 55 C | + 150 C | 3.3 W | Enhancement | TrenchFET | Reel | SI3433CDV-T1-BE3 SI3433CDV-GE3 | |||
Mfr: IRFS11N50APBF TTI: IRFS11N50APBF Vishay Semiconductors Availability: 21,000In Stock5,000 On Order Expected 10-Nov-27 MOSFETs TO263 500V 11A N-CH MOSFET | 21,000In Stock5,000 On Order Expected 10-Nov-27 | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 11 A | 520 mOhms | 30 V | 2 V | 52 nC | - 55 C | + 150 C | 170 W | Enhancement | Tube | |||||
Mfr: IRFPG50PBF TTI: IRFPG50PBF Vishay Semiconductors Availability: 700In StockMOSFETs TO247 1KV 6.1A N-CH MOSFET | 700In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 6.1 A | 2 Ohms | 20 V | 2 V | 190 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: IRF710PBF-BE3 TTI: IRF710PBF-BE3 Vishay / Siliconix Availability: 300In StockMOSFETs TO220 400V 2A N-CH MOSFET | 300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 2 A | 3.6 Ohms | 20 V | 4 V | 17 nC | - 55 C | + 150 C | 36 W | Enhancement | Tube | IRF710PBF | ||||
3,300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 28 A | 77 mOhms | 20 V | 4 V | 72 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRF540PBF-BE3 | |||||
Mfr: SI4435DDY-T1-GE3 TTI: SI4435DDY-T1-GE3 Vishay Semiconductors Availability: 10,000In StockMOSFETs -30V Vds 20V Vgs SO-8 | 10,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 11.4 A | 24 mOhms | 20 V | 1 V | 50 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4435DDY-GE3 | |||
2,300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | 10 V | 2 V | 66 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRLZ44PBF-BE3 | |||||
Mfr: SI7141DP-T1-GE3 TTI: SI7141DP-T1-GE3 Vishay Semiconductors Availability: 9,000In Stock3,000 On Order Expected 04-Dec-26 MOSFETs -20V Vds 20V Vgs PowerPAK SO-8 | 9,000In Stock3,000 On Order Expected 04-Dec-26 | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 20 V | 60 A | 1.9 mOhms | 20 V | 2.3 V | 265 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | SI7141DP-GE3 | |||
Mfr: SIR876ADP-T1-GE3 TTI: SIR876ADP-T1-GE3 Vishay Semiconductors Availability: 168,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 168,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 40 A | 9 mOhms | 20 V | 1.5 V | 49 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR876ADP-GE3 | |||
Mfr: SI2325DS-T1-GE3 TTI: SI2325DS-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -150V Vds 20V Vgs SOT-23 | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 150 V | 530 mA | 1.2 Ohms | 20 V | 4.5 V | 7.7 nC | - 55 C | + 150 C | 750 mW | Enhancement | TrenchFET | Reel | SI2325DS-T1-BE3 SI2325DS-GE3 | |||
Mfr: IRFBG20PBF-BE3 TTI: IRFBG20PBF-BE3 Vishay / Siliconix Availability: 80,900In StockMOSFETs TO220 1KV 1.4A N-CH MOSFET | 80,900In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 1.4 A | 11 Ohms | 20 V | 4 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Tube | IRFBG20PBF | ||||
Mfr: SIA469DJ-T1-GE3 TTI: SIA469DJ-T1-GE3 Vishay Semiconductors Availability: 21,000In Stock33,000 On Order Expected 21-Dec-26 MOSFETs -30V Vds 20V Vgs PowerPAK SC-70 | 21,000In Stock33,000 On Order Expected 21-Dec-26 | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 30 V | 12 A | 21 mOhms | 20 V | 3 V | 32 nC | - 55 C | + 150 C | 15.6 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SUD19P06-60-GE3 TTI: SUD19P06-60-GE3 Vishay Semiconductors Availability: 4,000In StockMOSFETs 60V 19A 38.5W 60mohm @ 10V | 4,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 19 A | 60 mOhms | 20 V | 3 V | 40 nC | - 55 C | + 150 C | 113 W | Enhancement | TrenchFET | Reel | SUD19P06-60-BE3 | |||
Mfr: SIHB22N60ET1-GE3 TTI: SIHB22N60ET1-GE3 Vishay / Siliconix Availability: 0In Stock2,400 On Order Expected 02-Feb-27 MOSFETs 600V Vds E Series D2PAK TO-263 | 0In Stock2,400 On Order Expected 02-Feb-27 | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 21 A | 180 mOhms | 30 V | 4 V | 57 nC | - 55 C | + 150 C | 227 W | Enhancement | Reel | |||||
Mfr: SI1013CX-T1-GE3 TTI: SI1013CX-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs -20V Vds 8V Vgs SC89-3 | 9,000In Stock | Si | SMD/SMT | P-Channel | 1 Channel | 20 V | 450 mA | 760 mOhms | 8 V | 1 V | 1.65 nC | - 55 C | + 150 C | 190 mW | Enhancement | TrenchFET | Reel | |||||
Mfr: IRFP460LCPBF TTI: IRFP460LCPBF Vishay Semiconductors Availability: 875In StockMOSFETs TO247 500V 20A N-CH MOSFET | 875In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 20 A | 270 mOhms | 20 V | 2 V | 120 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: SI7469DP-T1-GE3 TTI: SI7469DP-T1-GE3 Vishay Semiconductors Availability: 33,000In StockMOSFETs -80V Vds 20V Vgs PowerPAK SO-8 | 33,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 80 V | 28 A | 29 mOhms | 20 V | 3 V | 160 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7469DP-GE3 | |||
Mfr: SI2371EDS-T1-BE3 TTI: SI2371EDS-T1-BE3 Vishay / Siliconix Availability: 18,000In StockMOSFETs SOT23 P-CH 30V 3.7A | 18,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 4.8 A | 45 mOhms | 12 V | 1.5 V | 10.6 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2371EDS-T1-GE3 | ||||
Mfr: IRFP054PBF TTI: IRFP054PBF Vishay Semiconductors Availability: 21,500In StockMOSFETs TO247 N-CH 60V 70A | 21,500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 60 V | 70 A | 14 mOhms | 20 V | 2 V | 160 nC | - 55 C | + 175 C | 230 W | Enhancement | Tube | |||||
3,150In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 2.5 A | 3 Ohms | 20 V | 4 V | 24 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | IRF820PBF-BE3 |