Vishay - MOSFETs
7,440 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI1480DH-T1-BE3 TTI: SI1480DH-T1-BE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT363 100V 2.6A N-CH MOSFET | 6,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 100 V | 2.6 A | 200 mOhms | - 20 V, 20 V | 3 V | 5 nC | - 55 C | + 150 C | 2.8 W | Enhancement | TrenchFET | Reel | SI1480DH-T1-GE3 | |||
Mfr: IRFZ14PBF-BE3 TTI: IRFZ14PBF-BE3 Vishay / Siliconix Availability: 19,850In StockMOSFETs TO220 N-CH 60V 10A | 19,850In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 10 A | 200 mOhms | - 20 V, 20 V | 4 V | 11 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRFZ14PBF | ||||
Mfr: SIA918EDJ-T1-GE3 TTI: SIA918EDJ-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V Vds 8V Vgs PowerPAK SC-70 | 6,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 2 Channel | 30 V | 4.5 A | 58 mOhms | - 8 V, 8 V | 400 mV | 9.5 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFU9310PBF TTI: IRFU9310PBF Vishay Semiconductors Availability: 6,000In StockMOSFETs P-Chan 400V 1.8 Amp | 6,000In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 400 V | 1.8 A | 7 Ohms | - 20 V, 20 V | 4 V | 13 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | |||||
Mfr: IRF9510PBF-BE3 TTI: IRF9510PBF-BE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs TO220 100V 4A P-CH MOSFET | 3,000In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 4 A | 1.2 Ohms | - 20 V, 20 V | 4 V | 8.7 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF9510PBF | ||||
Mfr: SIR582DP-T1-RE3 TTI: SIR582DP-T1-RE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs PPAKSO8 N-CH 80V 28.9A | 6,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 80 V | 84.1 A | 3.2 mOhms | - 20 V, 20 V | 4 V | 44.5 nC | - 55 C | + 150 C | 92.5 W | Enhancement | Reel | |||||
Mfr: IRFR9020PBF TTI: IRFR9020PBF Vishay Semiconductors Availability: 3,000In StockMOSFETs TO252 P-CH 50V 9.9A | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 50 V | 9.9 A | 280 mOhms | - 20 V, 20 V | 4 V | 14 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: IRFIZ14GPBF TTI: IRFIZ14GPBF Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 N-CH 60V 8A | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 8 A | 200 mOhms | - 20 V, 20 V | 2 V | 11 nC | - 55 C | + 175 C | 27 W | Enhancement | Tube | |||||
Mfr: SI7117DN-T1-E3 TTI: SI7117DN-T1-E3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -150V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 150 V | 2.17 A | 1.2 Ohms | - 20 V, 20 V | 4.5 V | 7.7 nC | - 55 C | + 150 C | 12.5 W | Enhancement | TrenchFET | Reel | SI7117DN-E3 | |||
Mfr: SIHG065N60E-GE3 TTI: SIHG065N60E-GE3 Vishay Semiconductors Availability: 44,400In StockMOSFETs 650V Vds; 30V Vgs TO-247AC | 44,400In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 40 A | 65 mOhms | - 30 V, 30 V | 5 V | 74 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: SIHG73N60E-GE3 TTI: SIHG73N60E-GE3 Vishay / Siliconix Availability: 2,500In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 2,500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 73 A | 39 mOhms | - 30 V, 30 V | 4 V | 241 nC | - 55 C | + 150 C | 520 W | Enhancement | Tube | |||||
Mfr: SIHA15N80AE-GE3 TTI: SIHA15N80AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 800V 6A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 6 A | 350 mOhms | - 30 V, 30 V | 4 V | 53 nC | - 55 C | + 150 C | 33 W | Enhancement | Reel | |||||
Mfr: SIHG068N60EF-GE3 TTI: SIHG068N60EF-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs TO247 600V 41A N-CH MOSFET | 2,500In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 41 A | 68 mOhms | - 30 V, 30 V | 5 V | 27 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | ||||||
Mfr: SIHD1K4N60E-GE3 TTI: SIHD1K4N60E-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs 600V Vds 30V Vgs DPAK (TO-252) | 9,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 4.2 A | 1.45 Ohms | - 30 V, 30 V | 3 V | 7.5 nC | - 55 C | + 150 C | 63 W | Enhancement | Reel | |||||
Mfr: SIHG125N60EF-GE3 TTI: SIHG125N60EF-GE3 Vishay Semiconductors Availability: 500In StockMOSFETs TO247 600V 25A N-CH MOSFET | 500In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 25 A | 125 mOhms | - 30 V, 30 V | 5 V | 31 nC | - 55 C | + 150 C | 179 W | Enhancement | Reel | ||||||
Mfr: SIHG33N60E-GE3 TTI: SIHG33N60E-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 2,500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 33 A | 98 mOhms | - 30 V, 30 V | 4 V | 103 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | |||||
Mfr: SISS5708DN-T1-GE3 TTI: SISS5708DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs PWRPK 150V 33.8A N-CH MOSFET | 6,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 150 V | - 20 V, 20 V | 4 V | - 55 C | + 175 C | Enhancement | Reel | |||||||||
Mfr: SIHG24N65E-GE3 TTI: SIHG24N65E-GE3 Vishay / Siliconix Availability: 4,000In StockMOSFETs 650V Vds 30V Vgs TO-247AC | 4,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 24 A | 145 mOhms | - 30 V, 30 V | 4 V | 81 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: SIHP25N60EFL-BE3 TTI: SIHP25N60EFL-BE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 600V 25A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 25 A | 127 mOhms | - 30 V, 30 V | 3 V | 75 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | SIHP25N60EFL-GE3 | ||||
Mfr: SISS66DN-T1-GE3 TTI: SISS66DN-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs PPAK1212 N-CH 30V 49.1A | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 178.3 A | 1.38 mOhms | - 16 V, 20 V | 1 V | 57 nC | - 55 C | + 150 C | 65.8 W | Enhancement | PowerPAK | Reel | ||||
Mfr: SISH407DN-T1-GE3 TTI: SISH407DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds; +/-8V Vgs PowerPAK 1212-8SH | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8SH-8 | P-Channel | 1 Channel | 20 V | 25 A | 9.5 mOhms | - 8 V, 8 V | 1 V | 93.8 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET; PowerPAK | Reel | ||||
Mfr: SIHA12N60E-E3 TTI: SIHA12N60E-E3 Vishay / Siliconix Availability: 2,050In StockMOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | 2,050In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 12 A | 380 mOhms | - 30 V, 30 V | 4 V | 29 nC | - 55 C | + 150 C | 33 W | Enhancement | Tube | |||||
Mfr: SIZF640DT-T1-GE3 TTI: SIZF640DT-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs PPAIR6X5 2NCH 40V 41A | 6,000In Stock | Si | SMD/SMT | PowerPAIR 6 x 5FS-8 | N-Channel | 2 Channel | 30 V | 159 A | 1.37 mOhms | - 16 V, 20 V | 2.4 V | 30 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Bulk | |||||
Mfr: SIHG64N65E-GE3 TTI: SIHG64N65E-GE3 Vishay / Siliconix Availability: 375In StockMOSFETs 650V Vds 30V Vgs TO-247AC | 375In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 64 A | 47 mOhms | - 30 V, 30 V | 4 V | 239 nC | - 55 C | + 150 C | 520 W | Enhancement | Tube | |||||
Mfr: SI4168DY-T1-GE3 TTI: SI4168DY-T1-GE3 Vishay Semiconductors Availability: 10,000In StockMOSFETs 30V Vds 20V Vgs SO-8 | 10,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 24 A | 5.7 mOhms | - 20 V, 20 V | 1 V | 44 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4168DY-GE3 |
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