Vishay - MOSFETs
7,513 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIB441EDK-T1-GE3 TTI: SIB441EDK-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -12V Vds 8V Vgs PowerPAK SC-75 | 6,000In Stock | Si | SMD/SMT | SC-75-6 | P-Channel | 1 Channel | 12 V | 9 A | 21 mOhms | - 8 V, 8 V | 900 mV | 33 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHA11N80AE-GE3 TTI: SIHA11N80AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs N-CHANNEL 800V TO-220FP | 1,000In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 800 V | 8 A | 391 mOhms | - 30 V, 30 V | 4 V | 42 nC | - 55 C | + 150 C | 31 W | Enhancement | Reel | |||||
Mfr: SIHB33N60EF-GE3 TTI: SIHB33N60EF-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 2,000In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 600 V | 33 A | 98 mOhms | - 30 V, 30 V | 4 V | 103 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | ||||||
Mfr: SUM90220E-GE3 TTI: SUM90220E-GE3 Vishay Semiconductors Availability: 800In StockMOSFETs 200V Vds 20V Vgs TO-263 | 800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 64 A | 18 mOhms | - 20 V, 20 V | 2 V | 48 nC | - 55 C | + 175 C | 230 W | Enhancement | Reel | |||||
Mfr: SIZF640DT-T1-GE3 TTI: SIZF640DT-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs PPAIR6X5 2NCH 40V 41A | 6,000In Stock | Si | SMD/SMT | PowerPAIR 6 x 5FS-8 | N-Channel | 2 Channel | 30 V | 159 A | 1.37 mOhms | - 16 V, 20 V | 2.4 V | 30 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Bulk | |||||
Mfr: SIHP050N60E-GE3 TTI: SIHP050N60E-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 650V Vds 30V Vgs TO-220AB | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 51 A | 50 mOhms | - 30 V, 30 V | 5 V | 130 nC | - 55 C | + 150 C | 278 W | Enhancement | Reel | |||||
Mfr: SISS5708DN-T1-GE3 TTI: SISS5708DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs PWRPK 150V 33.8A N-CH MOSFET | 6,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 150 V | - 20 V, 20 V | 4 V | - 55 C | + 175 C | Enhancement | Reel | |||||||||
Mfr: SIHB15N80AE-GE3 TTI: SIHB15N80AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO263 800V 13A N-CH MOSFET | 1,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 13 A | 350 mOhms | - 30 V, 30 V | 4 V | 53 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | |||||
Mfr: SISH407DN-T1-GE3 TTI: SISH407DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds; +/-8V Vgs PowerPAK 1212-8SH | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8SH-8 | P-Channel | 1 Channel | 20 V | 25 A | 9.5 mOhms | - 8 V, 8 V | 1 V | 93.8 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET; PowerPAK | Reel | ||||
Mfr: SIHH240N60E-T1-GE3 TTI: SIHH240N60E-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs PWRPK 600V 12A N-CH MOSFET | 3,000In Stock | Si | SMD/SMT | PowerPAK 8 x 8 - 8 | N-Channel | 1 Channel | 600 V | 12 A | 208 mOhms | - 30 V, 30 V | 5 V | 23 nC | - 55 C | + 150 C | 89 W | Enhancement | Reel | |||||
Mfr: SIHA105N60EF-GE3 TTI: SIHA105N60EF-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs E Series Pwr MOSFET w/Fast Body Diode | 2,000In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 29 A | 100 mOhms | - 30 V, 30 V | 5 V | 35 nC | - 55 C | + 150 C | 35 W | Enhancement | Reel | ||||||
Mfr: SISS66DN-T1-GE3 TTI: SISS66DN-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs PPAK1212 N-CH 30V 49.1A | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 178.3 A | 1.38 mOhms | - 16 V, 20 V | 1 V | 57 nC | - 55 C | + 150 C | 65.8 W | Enhancement | PowerPAK | Reel | ||||
Mfr: IRF730PBF-BE3 TTI: IRF730PBF-BE3 Vishay / Siliconix Availability: 35,000In StockMOSFETs TO220 400V 5.5A N-CH MOSFET | 35,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 5.5 A | 1 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF730PBF | ||||
Mfr: SI7117DN-T1-E3 TTI: SI7117DN-T1-E3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -150V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 150 V | 2.17 A | 1.2 Ohms | - 20 V, 20 V | 4.5 V | 7.7 nC | - 55 C | + 150 C | 12.5 W | Enhancement | TrenchFET | Reel | SI7117DN-E3 | |||
Mfr: SIHG068N60EF-GE3 TTI: SIHG068N60EF-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs TO247 600V 41A N-CH MOSFET | 2,500In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 41 A | 68 mOhms | - 30 V, 30 V | 5 V | 27 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | ||||||
Mfr: IRF510PBF-BE3 TTI: IRF510PBF-BE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs TO220 100V 5.6A N-CH MOSFET | 12,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | - 20 V, 20 V | 4 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF | ||||
Mfr: SIHG33N60EF-GE3 TTI: SIHG33N60EF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 1,000In Stock | Si | Through Hole | TO-247AC-3 | Tube | |||||||||||||||||
Mfr: SIHP15N60E-GE3 TTI: SIHP15N60E-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 2,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 15 A | 280 mOhms | - 30 V, 30 V | 4 V | 39 nC | - 55 C | + 150 C | 180 W | Enhancement | Tube | |||||
Mfr: SIHG24N65E-GE3 TTI: SIHG24N65E-GE3 Vishay / Siliconix Availability: 4,000In StockMOSFETs 650V Vds 30V Vgs TO-247AC | 4,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 24 A | 145 mOhms | - 30 V, 30 V | 4 V | 81 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: SIHG125N60EF-GE3 TTI: SIHG125N60EF-GE3 Vishay Semiconductors Availability: 500In StockMOSFETs TO247 600V 25A N-CH MOSFET | 500In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 25 A | 125 mOhms | - 30 V, 30 V | 5 V | 31 nC | - 55 C | + 150 C | 179 W | Enhancement | Reel | ||||||
Mfr: IRFI510GPBF TTI: IRFI510GPBF Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 100V 4.5A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 4.5 A | 540 mOhms | - 20 V, 20 V | 2 V | 8.3 nC | - 55 C | + 175 C | 27 W | Enhancement | Tube | |||||
Mfr: SIHG73N60E-GE3 TTI: SIHG73N60E-GE3 Vishay / Siliconix Availability: 2,500In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 2,500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 73 A | 39 mOhms | - 30 V, 30 V | 4 V | 241 nC | - 55 C | + 150 C | 520 W | Enhancement | Tube | |||||
Mfr: SIHG33N60E-GE3 TTI: SIHG33N60E-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 2,500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 33 A | 98 mOhms | - 30 V, 30 V | 4 V | 103 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | |||||
Mfr: SIR424DP-T1-GE3 TTI: SIR424DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 20V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 30 A | 5.5 mOhms | - 20 V, 20 V | 1 V | 35 nC | - 55 C | + 150 C | 41.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR424DP-GE3 | |||
Mfr: SIHG64N65E-GE3 TTI: SIHG64N65E-GE3 Vishay / Siliconix Availability: 375In StockMOSFETs 650V Vds 30V Vgs TO-247AC | 375In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 64 A | 47 mOhms | - 30 V, 30 V | 4 V | 239 nC | - 55 C | + 150 C | 520 W | Enhancement | Tube |
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