Vishay - MOSFETs
7,529 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI2377EDS-T1-BE3 TTI: SI2377EDS-T1-BE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT23 P-CH 20V 3.7A | 6,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 4.4 A | 61 mOhms | 8 V | 1 V | 7.6 nC | - 55 C | + 150 C | 1.8 W | Enhancement | Reel | SI2377EDS-T1-GE3 | ||||
Mfr: SI3424CDV-T1-BE3 TTI: SI3424CDV-T1-BE3 Vishay / Siliconix Availability: 21,000In StockMOSFETs TSOP6 N-CH 30V 7.5A | 21,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 30 V | 8 A | 26 mOhms | 20 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 3.6 W | Enhancement | Reel | SI3424CDV-T1-GE3 | ||||
Mfr: SI3460DDV-T1-BE3 TTI: SI3460DDV-T1-BE3 Vishay / Siliconix Availability: 21,000In StockMOSFETs TSOP6 N-CH 20V 6.2A | 21,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 20 V | 7.9 A | 28 mOhms | 8 V | 1 V | 18 nC | - 55 C | + 150 C | 2.7 W | Enhancement | Reel | SI3460DDV-T1-GE3 | ||||
Mfr: SIDR668DP-T1-GE3 TTI: SIDR668DP-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8DC | 12,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 95 A | 5.05 mOhms | 20 V | 2 V | 72 nC | - 55 C | + 150 C | 125 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR106ADP-T1-RE3 TTI: SIR106ADP-T1-RE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs N-CHANNEL 100V PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 65.8 A | 8 mOhms | 20 V | 4 V | 26.5 nC, 34.5 nC | - 55 C | + 150 C | 83.3 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHP100N60E-GE3 TTI: SIHP100N60E-GE3 Vishay Semiconductors Availability: 1,000In StockMOSFETs 650V Vds; 30V Vgs TO-220AB | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 30 A | 100 mOhms | 30 V | 3 V | 50 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | |||||
Mfr: SIRA12BDP-T1-GE3 TTI: SIRA12BDP-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 4.3 mOhms | - 16 V, 20 V | 1.2 V | 21 nC | - 55 C | + 150 C | 38 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHP12N50E-BE3 TTI: SIHP12N50E-BE3 Vishay / Siliconix Availability: 1,600In StockMOSFETs TO220 500V 10.5A N-CH MOSFET | 1,600In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 10.5 A | 380 mOhms | 30 V | 4 V | 50 nC | - 55 C | + 150 C | 114 W | Enhancement | Tube | SIHP12N50E-GE3 | ||||
Mfr: SIR576DP-T1-RE3 TTI: SIR576DP-T1-RE3 Vishay Availability: 3,000In StockMOSFETs SOT669 150V 42.2A N-CH MOSFET | 3,000In Stock | Si | Reel | |||||||||||||||||||
Mfr: SIRS700DP-T1-GE3 TTI: SIRS700DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs SOT669 100V 120A N-CH MOSFET | 6,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 100 V | 120 A | 3.2 mOhms | 20 V | 4 V | 86 nC | - 55 C | + 150 C | 132 W | Enhancement | Reel | |||||
Mfr: IRFU9310PBF TTI: IRFU9310PBF Vishay Semiconductors Availability: 6,000In StockMOSFETs P-Chan 400V 1.8 Amp | 6,000In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 400 V | 1.8 A | 7 Ohms | 20 V | 4 V | 13 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | |||||
Mfr: SIR882DP-T1-GE3 TTI: SIR882DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 100 Volts 60 Amps 83 Watts | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 60 A | 7.1 mOhms | 20 V | 1.2 V | 58 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR882DP-GE3 | |||
Mfr: SIHD5N80AE-GE3 TTI: SIHD5N80AE-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs DPAK 800V 4.4A E SERIES | 6,000In Stock | Si | SMD/SMT | TO-252-4 | N-Channel | 1 Channel | 800 V | 4.4 A | 1.35 Ohms | 30 V | 4 V | 11 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Reel | |||||
Mfr: SIHD4N80E-GE3 TTI: SIHD4N80E-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 800V Vds 30V Vgs DPAK (TO-252) | 2,500In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 4.3 A | 1.1 Ohms | 30 V | 2 V | 16 nC | - 55 C | + 150 C | 69 W | Enhancement | Tube | |||||
Mfr: SIHD6N80AE-GE3 TTI: SIHD6N80AE-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs N-CHANNEL 800V DPAK (TO-252) | 6,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 5 A | 950 mOhms | 30 V | 4 V | 15 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Reel | |||||
Mfr: SI4134DY-T1-E3 TTI: SI4134DY-T1-E3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 30V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 14 A | 14 mOhms | 20 V | 1.2 V | 23 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4134DY-E3 | |||
Mfr: SI2366DS-T1-BE3 TTI: SI2366DS-T1-BE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT23 N-CH 30V 4.5A | 6,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 5.8 A | 36 mOhms | 20 V | 2.5 V | 3.2 nC | - 55 C | + 150 C | 2.1 W | Enhancement | Reel | SI2366DS-T1-GE3 | ||||
Mfr: SIHP186N60EF-GE3 TTI: SIHP186N60EF-GE3 Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 600V 18A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 18 A | 225 mOhms | 30 V | 5 V | 65 nC | - 55 C | + 150 C | 223 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI1480DH-T1-BE3 TTI: SI1480DH-T1-BE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT363 100V 2.6A N-CH MOSFET | 6,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 100 V | 2.6 A | 200 mOhms | 20 V | 3 V | 5 nC | - 55 C | + 150 C | 2.8 W | Enhancement | TrenchFET | Reel | SI1480DH-T1-GE3 | |||
Mfr: SIR404DP-T1-GE3 TTI: SIR404DP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 20V Vds 12V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 60 A | 1.6 mOhms | 12 V | 600 mV | 36.5 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR404DP-GE3 | |||
Mfr: SI1424EDH-T1-BE3 TTI: SI1424EDH-T1-BE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs SOT363 N-CH 20V 4A | 12,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 20 V | 4 A | 33 mOhms | 8 V | 1 V | 18 nC | - 55 C | + 150 C | 1.56 W | Enhancement | TrenchFET | Reel | SI1424EDH-T1-GE3 | |||
Mfr: SIHA11N80AE-GE3 TTI: SIHA11N80AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs N-CHANNEL 800V TO-220FP | 1,000In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 800 V | 8 A | 391 mOhms | 30 V | 4 V | 42 nC | - 55 C | + 150 C | 31 W | Enhancement | Reel | |||||
Mfr: SIA918EDJ-T1-GE3 TTI: SIA918EDJ-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V Vds 8V Vgs PowerPAK SC-70 | 6,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 2 Channel | 30 V | 4.5 A | 58 mOhms | 8 V | 400 mV | 9.5 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHB33N60EF-GE3 TTI: SIHB33N60EF-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 2,000In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 600 V | 33 A | 98 mOhms | 30 V | 4 V | 103 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | ||||||
Mfr: SI7613DN-T1-GE3 TTI: SI7613DN-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs -20V Vds 16V Vgs PowerPAK 1212-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 14 mOhms | 16 V | 2.2 V | 87 nC | - 50 C | + 150 C | 52.1 W | Enhancement | TrenchFET | Reel | SI7613DN-GE3 |