Vishay - MOSFETs
7,529 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SUD25N15-52-E3 TTI: SUD25N15-52-E3 Vishay Semiconductors Availability: 28,000In StockMOSFETs 150V 25A 136W 52mohm @ 10V | 28,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 150 V | 25 A | 52 mOhms | 20 V | 2 V | 40 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD25N15-52-BE3 | |||
Mfr: SI3483CDV-T1-BE3 TTI: SI3483CDV-T1-BE3 Vishay / Siliconix Availability: 33,000In StockMOSFETs TSOP6 P-CH 30V 6.1A | 33,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 8 A | 34 mOhms | 20 V | 1 V | 11.5 nC | - 55 C | + 150 C | 4.2 W | Enhancement | Reel | SI3483CDV-T1-GE3 | ||||
Mfr: SI3493BDV-T1-GE3 TTI: SI3493BDV-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 20V 8.0A 2.97W 27.5mohm @ 4.5V | 6,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 27.5 mOhms | 8 V | 900 mV | 43.5 nC | - 55 C | + 150 C | 2.97 W | Enhancement | TrenchFET | Reel | SI3493BDV-T1-BE3 SI3493BDV-GE3 | |||
Mfr: SIHU6N62E-GE3 TTI: SIHU6N62E-GE3 Vishay / Siliconix Availability: 30,000In StockMOSFETs 620V Vds 30V Vgs IPAK (TO-251) | 30,000In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 620 V | 6 A | 900 mOhms | 30 V | 4 V | 17 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | |||||
Mfr: SI3476DV-T1-GE3 TTI: SI3476DV-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs 80V Vds 20V Vgs TSOP-6 | 15,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 80 V | 4.6 A | 93 mOhms | 20 V | 1.2 V | 4.9 nC | - 55 C | + 150 C | 3.6 W | Enhancement | TrenchFET | Reel | SI3476DV-T1-BE3 | |||
Mfr: SI4850BDY-T1-GE3 TTI: SI4850BDY-T1-GE3 Vishay / Siliconix Availability: 2,500In StockMOSFETs 60V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 60 V | 11.3 A | 19.5 mOhms | 20 V | 2.8 V | 11.1 nC | - 55 C | + 150 C | 4.5 W | Enhancement | Reel | |||||
Mfr: SIRA18BDP-T1-GE3 TTI: SIRA18BDP-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs PPAKSO8 N-CH 30V 19A | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 6.83 mOhms | - 16 V, 20 V | 2.4 V | 12.2 nC | - 55 C | + 150 C | 17 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SUP60020E-GE3 TTI: SUP60020E-GE3 Vishay / Siliconix Availability: 1,250In StockMOSFETs TO220 N-CH 80V 150A | 1,250In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 150 A | 2.8 mOhms | 20 V | 2 V | 151.2 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Tube | ||||
Mfr: SIHP11N80AE-GE3 TTI: SIHP11N80AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs N-CHANNEL 800V TO-220AB | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 8 A | 391 mOhms | 30 V | 4 V | 28 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | |||||
Mfr: SIHB21N60EF-GE3 TTI: SIHB21N60EF-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 2,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 21 A | 176 mOhms | 30 V | 2 V | 84 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | |||||
Mfr: SIHP068N60EF-GE3 TTI: SIHP068N60EF-GE3 Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 600V 41A N-CH MOSFET | 1,000In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 41 A | 68 mOhms | 30 V | 5 V | 51 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | ||||||
Mfr: IRF530PBF-BE3 TTI: IRF530PBF-BE3 Vishay / Siliconix Availability: 4,700In StockMOSFETs TO220 100V 14A N-CH MOSFET | 4,700In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 14 A | 160 mOhms | 20 V | 4 V | 26 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF530PBF | ||||
Mfr: SI1441EDH-T1-BE3 TTI: SI1441EDH-T1-BE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs SOT363 P-CH 20V 4A | 9,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 4 A | 34 mOhms | 10 V | 1 V | 33 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI1441EDH-T1-GE3 | |||
Mfr: SIR826LDP-T1-RE3 TTI: SIR826LDP-T1-RE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs PPAKSO8 N-CH 80V 21.3A | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 86 A | 4.15 mOhms | 20 V | 2.4 V | 60.5 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHP21N80AEF-GE3 TTI: SIHP21N80AEF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 800V 16.3A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 850 V | 16.3 A | 250 mOhms | 30 V | 4 V | 71 nC | - 55 C | + 150 C | 179 W | Enhancement | TrenchFET | Bulk | ||||
Mfr: SISS5710DN-T1-GE3 TTI: SISS5710DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs PWRPK 150V 26.2A N-CH MOSFET | 6,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 150 V | 20 V | 4 V | - 55 C | + 175 C | Enhancement | Reel | |||||||||
Mfr: SIHG050N60E-GE3 TTI: SIHG050N60E-GE3 Vishay Semiconductors Availability: 500In StockMOSFETs 650V Vds 30V Vgs TO-247AC | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 51 A | 50 mOhms | 30 V | 5 V | 130 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | |||||
Mfr: SI7615DN-T1-GE3 TTI: SI7615DN-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs RECOMMENDED ALT SI76 | 12,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 3.1 mOhms | 12 V | 1.5 V | 183 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7615DN-GE3 | |||
Mfr: SIHG080N60E-GE3 TTI: SIHG080N60E-GE3 Vishay / Siliconix Availability: 500In StockMOSFETs TO247 600V 35A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 600 V | 35 A | 80 mOhms | 30 V | 5 V | 42 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | |||||
Mfr: IRFR320PBF TTI: IRFR320PBF Vishay Semiconductors Availability: 3,825In StockMOSFETs N-Chan 400V 3.1 Amp | 3,825In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 400 V | 3.1 A | 1.8 Ohms | 20 V | 2 V | 20 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: SI4483ADY-T1-GE3 TTI: SI4483ADY-T1-GE3 Vishay Semiconductors Availability: 5,000In StockMOSFETs -30V Vds 25V Vgs SO-8 | 5,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 19.2 A | 15.3 mOhms | 25 V | 2.6 V | 135 nC | - 55 C | + 150 C | 5.9 W | Enhancement | TrenchFET | Reel | SI4483ADY-GE3 | |||
Mfr: IRF9Z34SPBF TTI: IRF9Z34SPBF Vishay Semiconductors Availability: 300In StockMOSFETs P-Chan 60V 18 Amp | 300In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 60 V | 18 A | 140 mOhms | 20 V | 4 V | 34 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | |||||
Mfr: IRF9620SPBF TTI: IRF9620SPBF Vishay / Siliconix Availability: 3,000In StockMOSFETs TO263 200V 3.5A P-CH MOSFET | 3,000In Stock | Si | TO-263-3 | Tube | ||||||||||||||||||
Mfr: SI1539CDL-T1-BE3 TTI: SI1539CDL-T1-BE3 Vishay / Siliconix Availability: 75,000In StockMOSFETs SOT363 NPCH 30V .7A | 75,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 30 V | 700 mA | 388 mOhms, 890 mOhms | 20 V | 2.5 V | 3 nC | - 55 C | + 150 C | 340 mW | Enhancement | TrenchFET | Reel | SI1539CDL-T1-GE3 | |||
Mfr: SIR584DP-T1-RE3 TTI: SIR584DP-T1-RE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs PPAKSO8 N-CH 80V 24.7A | 12,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 80 V | 100 A | 3.5 mOhms | 20 V | 4 V | 36.7 nC | - 55 C | + 150 C | 83.3 W | Enhancement | Reel |