Vishay - MOSFETs
7,551 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHG11N80AE-GE3 TTI: SIHG11N80AE-GE3 Vishay / Siliconix Availability: 500In StockMOSFETs TO247 800V 8A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 8 A | 450 mOhms | 30 V | 2 V | 28 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | SIHG11N80AE | ||||
Mfr: SIR5802DP-T1-RE3 TTI: SIR5802DP-T1-RE3 Vishay Availability: 9,000In StockMOSFETs PPAKSO8 N-CH 80V 33.6A | 9,000In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 80 V | 137.5 A | 2.9 mOhms | 10 V | 4 V | 28 nC | - 55 C | + 150 C | PowerPAK | Reel | ||||||
Mfr: SUD50N04-8M8P-4BE3 TTI: SUD50N04-8M8P-4BE3 Vishay / Siliconix Availability: 20,000In StockMOSFETs N-CHANNEL 40V (D-S) | 20,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 40 V | 50 A | 8 mOhms | 20 V | 3 V | 37 nC | - 55 C | + 150 C | 48.1 W | Enhancement | TrenchFET | Reel | SUD50N04-8M8P-4GE3 | |||
Mfr: SIHA17N80AE-GE3 TTI: SIHA17N80AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 800V 7A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 7 A | 250 mOhms | 30 V | 4 V | 41 nC | - 55 C | + 155 C | 34 W | Enhancement | Reel | |||||
Mfr: SIHP080N60E-GE3 TTI: SIHP080N60E-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO220 600V 35A N-CH MOSFET | 2,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 35 A | 80 mOhms | 30 V | 5 V | 42 nC | - 55 C | + 150 C | 227 W | Enhancement | Bulk | |||||
Mfr: SI1469DH-T1-BE3 TTI: SI1469DH-T1-BE3 Vishay Availability: 9,000In StockMOSFETs SOT363 P-CH 20V 2.7A | 9,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 2.7 A | 155 mOhms | 12 V | 1.5 V | 8.5 nC | - 55 C | + 150 C | 2.78 W | Enhancement | Reel | SI1469DH-T1-E3 SI1469DH-T1-GE3 | ||||
Mfr: IRFBE30LPBF TTI: IRFBE30LPBF Vishay Semiconductors Availability: 500In StockMOSFETs N-Chan 800V 4.1 Amp | 500In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 800 V | 4.1 A | 3 Ohms | 20 V | 2 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: SIA413DJ-T1-GE3 TTI: SIA413DJ-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 12V 12A 19W 29mohm @ 4.5V | 3,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 12 A | 150 mOhms | 8 V | 1 V | 38 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET | Reel | SIA413DJ-GE3 | |||
Mfr: SI4835DDY-T1-GE3 TTI: SI4835DDY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs -30V Vds 25V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 13 A | 30 mOhms | 25 V | 3 V | 65 nC | - 55 C | + 150 C | 5.6 W | Enhancement | TrenchFET | Reel | SI4835DDY-GE3 | |||
Mfr: SIR403EDP-T1-GE3 TTI: SIR403EDP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -30V Vds 25V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 40 A | 11.5 mOhms | 25 V | 2.8 V | 153 nC | - 55 C | + 150 C | 56.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SUD70090E-GE3 TTI: SUD70090E-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs 100V Vds 20V Vgs DPAK (TO-252) | 2,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 50 A | 8.9 mOhms | 20 V | 4 V | 50 nC | - 55 C | + 175 C | 125 W | Enhancement | ThunderFET | Reel | ||||
Mfr: SIHJ10N60E-T1-GE3 TTI: SIHJ10N60E-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 600V Vds 30V Vgs PowerPAK SO-8L | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 600 V | 10 A | 313 mOhms | 30 V | 4.5 V | 25 nC | - 55 C | + 150 C | 89 W | Enhancement | Reel | |||||
Mfr: SIHG47N60AEF-GE3 TTI: SIHG47N60AEF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 1,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 40 A | 70 mOhms | 30 V | 2 V | 189 nC | - 55 C | + 150 C | 313 W | Enhancement | Tube | |||||
Mfr: SIHD180N60E-GE3 TTI: SIHD180N60E-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 650V Vds; 30V Vgs DPAK (TO-252) | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 19 A | 195 mOhms | 30 V | 3 V | 32 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | |||||
Mfr: SIHA100N60E-GE3 TTI: SIHA100N60E-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs 600V Vds; +/-30V Vgs Thin-Lead TO-220 | 2,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 30 A | 100 mOhms | 30 V | 3 V | 50 nC | - 55 C | + 150 C | 35 W | Enhancement | Reel | |||||
Mfr: IRFR9310TRLPBF-BE3 TTI: IRFR9310TRLPBF-BE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs TO252 400V 1.8A P-CH MOSFET | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 400 V | 1.8 A | 7 Ohms | 20 V | 4 V | 13 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | IRFR9310TRLPBF | ||||
Mfr: SIHG039N60E-GE3 TTI: SIHG039N60E-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs 650V Vds; 30V Vgs TO-247AC | 2,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 63 A | 39 mOhms | 30 V | 3 V | 126 nC | - 55 C | + 150 C | 357 W | Enhancement | Tube | |||||
Mfr: SIHP186N60EF-GE3 TTI: SIHP186N60EF-GE3 Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 600V 18A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 18 A | 225 mOhms | 30 V | 5 V | 65 nC | - 55 C | + 150 C | 223 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFB11N50APBF-BE3 TTI: IRFB11N50APBF-BE3 Vishay / Siliconix Availability: 2,650In StockMOSFETs TO220 500V 11A N-CH MOSFET | 2,650In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 11 A | 520 mOhms | 30 V | 4 V | 52 nC | - 55 C | + 150 C | 170 W | Enhancement | Tube | IRFB11N50APBF | ||||
Mfr: SI2366DS-T1-BE3 TTI: SI2366DS-T1-BE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT23 N-CH 30V 4.5A | 6,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 5.8 A | 36 mOhms | 20 V | 2.5 V | 3.2 nC | - 55 C | + 150 C | 2.1 W | Enhancement | Reel | SI2366DS-T1-GE3 | ||||
Mfr: SI1480DH-T1-BE3 TTI: SI1480DH-T1-BE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT363 100V 2.6A N-CH MOSFET | 6,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 100 V | 2.6 A | 200 mOhms | 20 V | 3 V | 5 nC | - 55 C | + 150 C | 2.8 W | Enhancement | TrenchFET | Reel | SI1480DH-T1-GE3 | |||
Mfr: SI1424EDH-T1-BE3 TTI: SI1424EDH-T1-BE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs SOT363 N-CH 20V 4A | 12,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 20 V | 4 A | 33 mOhms | 8 V | 1 V | 18 nC | - 55 C | + 150 C | 1.56 W | Enhancement | TrenchFET | Reel | SI1424EDH-T1-GE3 | |||
Mfr: SI7613DN-T1-GE3 TTI: SI7613DN-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs -20V Vds 16V Vgs PowerPAK 1212-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 14 mOhms | 16 V | 2.2 V | 87 nC | - 50 C | + 150 C | 52.1 W | Enhancement | TrenchFET | Reel | SI7613DN-GE3 | |||
Mfr: SIHB15N60E-GE3 TTI: SIHB15N60E-GE3 Vishay / Siliconix Availability: 4,000In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 4,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 15 A | 280 mOhms | 30 V | 4 V | 39 nC | - 55 C | + 150 C | 180 W | Enhancement | Tube | |||||
Mfr: SIR404DP-T1-GE3 TTI: SIR404DP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 20V Vds 12V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 60 A | 1.6 mOhms | 12 V | 600 mV | 36.5 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR404DP-GE3 |