Vishay - MOSFETs
7,529 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRFR014TRLPBF-BE3 TTI: IRFR014TRLPBF-BE3 Vishay / Siliconix Availability: 93,000In StockMOSFETs TO252 N-CH 60V 7.7A | 93,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 7.7 A | 200 mOhms | 20 V | 4 V | 11 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | IRFR014TRLPBF | ||||
Mfr: IRF730APBF TTI: IRF730APBF Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 400V 5.5A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 5.5 A | 1 Ohms | 30 V | 4.5 V | 22 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF730APBF-BE3 | ||||
Mfr: SI1967DH-T1-BE3 TTI: SI1967DH-T1-BE3 Vishay Availability: 60,000In StockMOSFETs SOT363 2PCH 20V 1A | 60,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 20 V | 1.3 A | 490 mOhms | 8 V | 2.5 V | 4 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | SI1967DH-T1-GE3 SI1967DH-T1-E3 | ||||
Mfr: SISS67DN-T1-GE3 TTI: SISS67DN-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs -30V Vds 25V Vgs PowerPAK 1212-8S | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8S-8 | P-Channel | 1 Channel | 30 V | 60 A | 4.6 mOhms | 25 V | 2.5 V | 74 nC | - 55 C | + 150 C | 65.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHD11N80AE-GE3 TTI: SIHD11N80AE-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs TO252 800V 8A N-CH MOSFET | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 8 A | 450 mOhms | 30 V | 2 V | 28 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | SIHD11N80AE | ||||
Mfr: SIRA32DP-T1-RE3 TTI: SIRA32DP-T1-RE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 25V Vds 16V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 25 V | 60 A | 1 mOhms | - 12 V, 16 V | 2.2 V | 55 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRFU024PBF TTI: IRFU024PBF Vishay Semiconductors Availability: 2,475In StockMOSFETs TO251 N-CH 60V 14A | 2,475In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 60 V | 14 A | 100 mOhms | 20 V | 2 V | 25 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Tube | |||||
Mfr: SIHF30N60E-GE3 TTI: SIHF30N60E-GE3 Vishay Semiconductors Availability: 10,000In StockMOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | 10,000In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 600 V | 29 A | 125 mOhms | 30 V | 2.8 V | 85 nC | - 55 C | + 150 C | 37 W | Enhancement | Tube | |||||
Mfr: SISHA14DN-T1-GE3 TTI: SISHA14DN-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs PPAK1212 N-CH 30V 19.7A | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 20 A | 5.1 mOhms | - 16 V, 20 V | 1.1 V | 19.4 nC | - 55 C | + 150 C | 26.5 W | Enhancement | PowerPAK | Reel | ||||
Mfr: SIHP105N60EF-GE3 TTI: SIHP105N60EF-GE3 Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 600V 29A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 29 A | 88 mOhms | 30 V | 5 V | 35 nC | - 55 C | + 150 C | 208 W | Enhancement | TrenchFET | Bulk | ||||
Mfr: SISH101DN-T1-GE3 TTI: SISH101DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -30V Vds; +/-25V Vgs PowerPAK 1212-8SH | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8SH-8 | P-Channel | 1 Channel | 30 V | 35 A | 7.2 mOhms | 25 V | 2.5 V | 102 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET; PowerPAK | Reel | ||||
Mfr: SUD90330E-BE3 TTI: SUD90330E-BE3 Vishay / Siliconix Availability: 4,000In StockMOSFETs N-CHANNEL 200V (D-S) | 4,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 35.1 A | 37.5 mOhms | 20 V | 4 V | 21 nC | - 55 C | + 175 C | 125 W | Enhancement | TrenchFET | Reel | SUD90330E-GE3 | |||
Mfr: SIHD6N80E-GE3 TTI: SIHD6N80E-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 800V Vds 30V Vgs DPAK (TO-252) | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 5.4 A | 820 mOhms | 30 V | 4 V | 44 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | |||||
Mfr: SUM85N15-19-E3 TTI: SUM85N15-19-E3 Vishay Semiconductors Availability: 800In StockMOSFETs 150V 85A 375W 19mohm @ 10V | 800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 150 V | 85 A | 19 mOhms | 20 V | 2 V | 76 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIS438DN-T1-GE3 TTI: SIS438DN-T1-GE3 Vishay Semiconductors Availability: 24,000In StockMOSFETs 20V Vds 20V Vgs PowerPAK 1212-8 | 24,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 16 A | 9.5 mOhms | 20 V | 1 V | 23 nC | - 55 C | + 150 C | 27.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS438DN-GE3 | |||
Mfr: SI7633DP-T1-GE3 TTI: SI7633DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -20V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 20 V | 60 A | 5.5 mOhms | 20 V | 3 V | 260 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | SI7633DP-GE3 | |||
Mfr: SIRA04DP-T1-GE3 TTI: SIRA04DP-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 1.8 mOhms | - 16 V, 20 V | 1.1 V | 77 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA04DP-GE3 | |||
Mfr: SIA416DJ-T1-GE3 TTI: SIA416DJ-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SC-70 | 3,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 100 V | 11.3 A | 68 mOhms | 20 V | 1.6 V | 10 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI4488DY-T1-GE3 TTI: SI4488DY-T1-GE3 Vishay Semiconductors Availability: 7,500In StockMOSFETs 150V Vds 20V Vgs SO-8 | 7,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 150 V | 5 A | 50 mOhms | 20 V | 2 V | 36 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4488DY-GE3 | |||
Mfr: SI4122DY-T1-GE3 TTI: SI4122DY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 40V Vds 25V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 27.2 A | 4.5 mOhms | 25 V | 1.2 V | 95 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4122DY-GE3 | |||
Mfr: SIHP33N60EF-GE3 TTI: SIHP33N60EF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 33 A | 98 mOhms | 30 V | 2 V | 155 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | |||||
Mfr: IRFBC40PBF-BE3 TTI: IRFBC40PBF-BE3 Vishay / Siliconix Availability: 350In StockMOSFETs TO220 600V 6.2A N-CH MOSFET | 350In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | 20 V | 4 V | 60 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBC40PBF | ||||
Mfr: SIHG105N60EF-GE3 TTI: SIHG105N60EF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs EF Series Pwr MOSFET w/Fast Body Diode | 1,000In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 29 A | 102 mOhms | 30 V | 5 V | 35 nC | - 55 C | + 150 C | 208 W | Enhancement | Tube | ||||||
Mfr: SI4114DY-T1-GE3 TTI: SI4114DY-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs 20V Vds 16V Vgs SO-8 | 15,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 20 V | 20 A | 6 mOhms | 16 V | 1 V | 95 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4114DY-GE3 | |||
Mfr: SIHG30N60E-GE3 TTI: SIHG30N60E-GE3 Vishay / Siliconix Availability: 10,000In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 10,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 29 A | 125 mOhms | 30 V | 4 V | 85 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube |