Vishay - MOSFETs
7,440 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIR882DP-T1-GE3 TTI: SIR882DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 100 Volts 60 Amps 83 Watts | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 60 A | 7.1 mOhms | - 20 V, 20 V | 1.2 V | 58 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR882DP-GE3 | |||
Mfr: SI5513CDC-T1-E3 TTI: SI5513CDC-T1-E3 Vishay Semiconductors Availability: 12,000In StockMOSFETs 20V Vds 12V Vgs 1206-8 ChipFET | 12,000In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel, P-Channel | 2 Channel | 20 V | 3.7 A, 4 A | 55 mOhms, 150 mOhms | - 12 V, 12 V | 600 mV | 4.2 nC, 5.6 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI5513CDC-E3 | |||
Mfr: SI7370DP-T1-GE3 TTI: SI7370DP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 9.6 A | 11 mOhms | - 20 V, 20 V | 4 V | 57 nC | - 55 C | + 150 C | 5.2 W | Enhancement | TrenchFET | Reel | SI7370DP-GE3 | |||
Mfr: SI4134DY-T1-E3 TTI: SI4134DY-T1-E3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 30V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 14 A | 14 mOhms | - 20 V, 20 V | 1.2 V | 23 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4134DY-E3 | |||
Mfr: SI7108DN-T1-GE3 TTI: SI7108DN-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs 20V 22A 3.8W 4.9mohm @ 10V | 15,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 22 A | 4.9 mOhms | - 16 V, 16 V | 2 V | 20 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7108DN-GE3 | |||
Mfr: SUP90142E-GE3 TTI: SUP90142E-GE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs 200V Vds 20V Vgs TO-220AB | 12,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 90 A | 12.6 mOhms | - 20 V, 20 V | 2 V | 87 nC | - 55 C | + 175 C | 375 W | Enhancement | Reel | |||||
Mfr: SIHB15N60E-GE3 TTI: SIHB15N60E-GE3 Vishay / Siliconix Availability: 4,000In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 4,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 15 A | 280 mOhms | - 30 V, 30 V | 4 V | 39 nC | - 55 C | + 150 C | 180 W | Enhancement | Tube | |||||
Mfr: SIR606DP-T1-GE3 TTI: SIR606DP-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 37 A | 16.2 mOhms | - 20 V, 20 V | 2.4 V | 36.5 nC | - 55 C | + 150 C | 44.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHP22N60E-GE3 TTI: SIHP22N60E-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 3,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 21 A | 180 mOhms | - 30 V, 30 V | 4 V | 57 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | |||||
Mfr: SIJ470DP-T1-GE3 TTI: SIJ470DP-T1-GE3 Vishay Semiconductors Availability: 6,000In Stock6,000 On Order Expected 09-Oct-26 MOSFETs 100V 9.1mOhm@10V 58.8A N-CH | 6,000In Stock6,000 On Order Expected 09-Oct-26 | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 100 V | 58.8 A | 7.6 mOhms | - 20 V, 20 V | 2.3 V | 56 nC | - 55 C | + 150 C | 56.8 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: SIHA15N50E-E3 TTI: SIHA15N50E-E3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 500V Vds 30V Vgs TO-220 FULLPAK | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 550 V | 14.5 A | 243 mOhms | - 30 V, 30 V | 4 V | 33 nC | - 55 C | + 150 C | 33 W | Enhancement | Tube | |||||
Mfr: SIHD4N80E-GE3 TTI: SIHD4N80E-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 800V Vds 30V Vgs DPAK (TO-252) | 2,500In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 4.3 A | 1.1 Ohms | - 30 V, 30 V | 2 V | 16 nC | - 55 C | + 150 C | 69 W | Enhancement | Tube | |||||
Mfr: SIHG039N60E-GE3 TTI: SIHG039N60E-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs 650V Vds; 30V Vgs TO-247AC | 2,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 63 A | 39 mOhms | - 30 V, 30 V | 3 V | 126 nC | - 55 C | + 150 C | 357 W | Enhancement | Tube | |||||
Mfr: SIHA120N60E-GE3 TTI: SIHA120N60E-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs 650V Vds; 30V Vgs TO-220 | 2,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 25 A | 120 mOhms | - 30 V, 30 V | 3 V | 45 nC | - 55 C | + 150 C | 34 W | Enhancement | Reel | |||||
Mfr: SIHG23N60E-GE3 TTI: SIHG23N60E-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 2,500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 23 A | 158 mOhms | - 30 V, 30 V | 4 V | 63 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | |||||
Mfr: SIR4606DP-T1-GE3 TTI: SIR4606DP-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs N-CHANNEL 60-V (D-S) MOSFET | 12,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 4.9 mOhms | - 20 V, 20 V | 2.4 V | 54 nC | - 55 C | + 175 C | 48 W | Enhancement | Reel | |||||
Mfr: SIHB100N60E-GE3 TTI: SIHB100N60E-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs 650V Vds; 30V Vgs D2PAK (TO-263) | 2,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 30 A | 100 mOhms | - 30 V, 30 V | 3 V | 50 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | |||||
Mfr: SI2366DS-T1-BE3 TTI: SI2366DS-T1-BE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT23 N-CH 30V 4.5A | 6,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 5.8 A | 36 mOhms | - 20 V, 20 V | 2.5 V | 3.2 nC | - 55 C | + 150 C | 2.1 W | Enhancement | Reel | SI2366DS-T1-GE3 | ||||
Mfr: IRF730APBF-BE3 TTI: IRF730APBF-BE3 Vishay / Siliconix Availability: 4,950In StockMOSFETs TO220 400V 5.5A N-CH MOSFET | 4,950In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 5.5 A | 1 Ohms | - 30 V, 30 V | 4.5 V | 22 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF730APBF | ||||
Mfr: IRFZ14PBF-BE3 TTI: IRFZ14PBF-BE3 Vishay / Siliconix Availability: 19,850In StockMOSFETs TO220 N-CH 60V 10A | 19,850In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 10 A | 200 mOhms | - 20 V, 20 V | 4 V | 11 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRFZ14PBF | ||||
Mfr: SIHA11N80AE-GE3 TTI: SIHA11N80AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs N-CHANNEL 800V TO-220FP | 1,000In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 800 V | 8 A | 391 mOhms | - 30 V, 30 V | 4 V | 42 nC | - 55 C | + 150 C | 31 W | Enhancement | Reel | |||||
Mfr: SIR582DP-T1-RE3 TTI: SIR582DP-T1-RE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs PPAKSO8 N-CH 80V 28.9A | 6,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 80 V | 84.1 A | 3.2 mOhms | - 20 V, 20 V | 4 V | 44.5 nC | - 55 C | + 150 C | 92.5 W | Enhancement | Reel | |||||
Mfr: SIA918EDJ-T1-GE3 TTI: SIA918EDJ-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V Vds 8V Vgs PowerPAK SC-70 | 6,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 2 Channel | 30 V | 4.5 A | 58 mOhms | - 8 V, 8 V | 400 mV | 9.5 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHB33N60EF-GE3 TTI: SIHB33N60EF-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 2,000In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 600 V | 33 A | 98 mOhms | - 30 V, 30 V | 4 V | 103 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | ||||||
Mfr: SI2303CDS-T1-BE3 TTI: SI2303CDS-T1-BE3 Vishay / Siliconix Availability: 114,000In StockMOSFETs SOT23 P-CH 30V 1.9A | 114,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 2.7 A | 190 mOhms | - 20 V, 20 V | 3 V | 2 nC | - 55 C | + 150 C | 2.3 W | Enhancement | Reel | SI2303CDS-T1-GE3 |
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