Vishay - MOSFETs
7,513 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIAA40DJ-T1-GE3 TTI: SIAA40DJ-T1-GE3 Vishay Semiconductors Availability: 24,000In StockMOSFETs 40V Vds 20V Vgs PowerPAK SC-70 | 24,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 40 V | 30 A | 12.5 mOhms | - 16 V, 20 V | 1 V | 24 nC | - 55 C | + 150 C | 19.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SUP70030E-GE3 TTI: SUP70030E-GE3 Vishay Semiconductors Availability: 1,000In StockMOSFETs 100V Vds; 20V Vgs TO-220AB | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 150 A | 3.18 mOhms | - 20 V, 20 V | 2 V | 214 nC | - 55 C | + 175 C | 375 W | Enhancement | Tube | |||||
Mfr: SUD50N04-8M8P-4GE3 TTI: SUD50N04-8M8P-4GE3 Vishay Semiconductors Availability: 5,000In StockMOSFETs 40V 50A 48.1W 8.8mohm @ 10V | 5,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 40 V | 50 A | 8 mOhms | - 20 V, 20 V | 3 V | 37 nC | - 55 C | + 150 C | 48.1 W | Enhancement | TrenchFET | Reel | SUD50N04-8M8P-4BE3 | |||
Mfr: SIR870ADP-T1-RE3 TTI: SIR870ADP-T1-RE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 60 A | 5.5 mOhms | - 20 V, 20 V | 1.5 V | 80 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHP25N60EFL-BE3 TTI: SIHP25N60EFL-BE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 600V 25A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 25 A | 127 mOhms | - 30 V, 30 V | 3 V | 75 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | SIHP25N60EFL-GE3 | ||||
Mfr: SI4168DY-T1-GE3 TTI: SI4168DY-T1-GE3 Vishay Semiconductors Availability: 10,000In StockMOSFETs 30V Vds 20V Vgs SO-8 | 10,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 24 A | 5.7 mOhms | - 20 V, 20 V | 1 V | 44 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4168DY-GE3 | |||
Mfr: IRFIZ14GPBF TTI: IRFIZ14GPBF Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 N-CH 60V 8A | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 8 A | 200 mOhms | - 20 V, 20 V | 2 V | 11 nC | - 55 C | + 175 C | 27 W | Enhancement | Tube | |||||
Mfr: SI2329DS-T1-GE3 TTI: SI2329DS-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -8V Vds 5V Vgs SOT-23 | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 8 V | 6 A | 30 mOhms | - 5 V, 5 V | 350 mV | 19.3 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHK045N60EF-T1GE3 TTI: SIHK045N60EF-T1GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs TOLL 600V 47A E SERIES | 2,000In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 80 V | 66 A | 12.5 mOhms | - 20 V, 20 V | 2.5 V | 45 nC | - 55 C | + 175 C | 135 W | Enhancement | Reel | |||||
Mfr: SI3460DDV-T1-GE3 TTI: SI3460DDV-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs 20V Vds 8V Vgs TSOP-6 | 15,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 20 V | 7.9 A | 28 mOhms | - 8 V, 8 V | 1 V | 18 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI3460DDV-T1-BE3 SI3460DDV-GE3 | |||
Mfr: SIHG065N60E-GE3 TTI: SIHG065N60E-GE3 Vishay Semiconductors Availability: 44,400In StockMOSFETs 650V Vds; 30V Vgs TO-247AC | 44,400In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 40 A | 65 mOhms | - 30 V, 30 V | 5 V | 74 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: SIHG17N80AE-GE3 TTI: SIHG17N80AE-GE3 Vishay / Siliconix Availability: 5,000In StockMOSFETs TO247 800V 15A N-CH MOSFET | 5,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 15 A | 250 mOhms | - 30 V, 30 V | 4 V | 41 nC | - 55 C | + 155 C | 179 W | Enhancement | Reel | |||||
Mfr: SIR104LDP-T1-RE3 TTI: SIR104LDP-T1-RE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs N-CHANNEL 100 V | 6,000In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 100 V | 81 A | 6.1 mOhms | - 20 V, 20 V | 3 V | 73 nC | - 55 C | + 150 C | 100 W | Enhancement | PowerPAK | Reel | |||||
Mfr: SI3474DV-T1-BE3 TTI: SI3474DV-T1-BE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs TSOP6 100V 3.8A N-CH MOSFET | 12,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 100 V | 3.8 A | 126 mOhms | - 20 V, 20 V | 1.2 V | 2.9 nC | - 55 C | + 150 C | 3.6 W | Enhancement | Reel | SI3474DV-T1-GE3 | ||||
Mfr: SI4850BDY-T1-GE3 TTI: SI4850BDY-T1-GE3 Vishay / Siliconix Availability: 2,500In StockMOSFETs 60V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 60 V | 11.3 A | 19.5 mOhms | - 20 V, 20 V | 2.8 V | 11.1 nC | - 55 C | + 150 C | 4.5 W | Enhancement | Reel | |||||
Mfr: SIHP21N80AEF-GE3 TTI: SIHP21N80AEF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 800V 16.3A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 850 V | 16.3 A | 250 mOhms | - 30 V, 30 V | 4 V | 71 nC | - 55 C | + 150 C | 179 W | Enhancement | TrenchFET | Bulk | ||||
Mfr: SIHG080N60E-GE3 TTI: SIHG080N60E-GE3 Vishay / Siliconix Availability: 500In StockMOSFETs TO247 600V 35A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 600 V | 35 A | 80 mOhms | - 30 V, 30 V | 5 V | 42 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | |||||
Mfr: SIHB21N60EF-GE3 TTI: SIHB21N60EF-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 2,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 21 A | 176 mOhms | - 30 V, 30 V | 2 V | 84 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | |||||
Mfr: SIHA22N60EL-GE3 TTI: SIHA22N60EL-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO220 600V 21A N-CH MOSFET | 2,000In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 600 V | 21 A | 197 mOhms | - 30 V, 30 V | 5 V | 37 nC | - 55 C | + 150 C | 35 W | Enhancement | Reel | |||||
Mfr: IRFR310TRPBF-BE3 TTI: IRFR310TRPBF-BE3 Vishay / Siliconix Availability: 4,000In StockMOSFETs TO252 400V 1.7A N-CH MOSFET | 4,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 400 V | 1.7 A | 3.6 Ohms | - 20 V, 20 V | 4 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | IRFR310TRPBF | ||||
Mfr: IRF820STRLPBF TTI: IRF820STRLPBF Vishay Semiconductors Availability: 1,600In StockMOSFETs N-Chan 500V 2.5 Amp | 1,600In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | Reel | |||||||||||||||||
Mfr: SISS5710DN-T1-GE3 TTI: SISS5710DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs PWRPK 150V 26.2A N-CH MOSFET | 6,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 150 V | - 20 V, 20 V | 4 V | - 55 C | + 175 C | Enhancement | Reel | |||||||||
Mfr: SUD19N20-90-T4-E3 TTI: SUD19N20-90-T4-E3 Vishay Semiconductors Availability: 2,500In StockMOSFETs N-CH 200V 19A | 2,500In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 19 A | 90 mOhms | - 20 V, 20 V | 2 V | 51 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD19N20-90-T4 | |||
Mfr: SUD25N15-52-E3 TTI: SUD25N15-52-E3 Vishay Semiconductors Availability: 28,000In StockMOSFETs 150V 25A 136W 52mohm @ 10V | 28,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 150 V | 25 A | 52 mOhms | - 20 V, 20 V | 2 V | 40 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD25N15-52-BE3 | |||
Mfr: IRF9Z34SPBF TTI: IRF9Z34SPBF Vishay Semiconductors Availability: 300In StockMOSFETs P-Chan 60V 18 Amp | 300In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 60 V | 18 A | 140 mOhms | - 20 V, 20 V | 4 V | 34 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube |
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