Vishay - MOSFETs
7,513 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SUP60020E-GE3 TTI: SUP60020E-GE3 Vishay / Siliconix Availability: 2,250In StockMOSFETs TO220 N-CH 80V 150A | 2,250In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 150 A | 2.8 mOhms | - 20 V, 20 V | 2 V | 151.2 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Tube | ||||
Mfr: SIHG050N60E-GE3 TTI: SIHG050N60E-GE3 Vishay Semiconductors Availability: 500In StockMOSFETs 650V Vds 30V Vgs TO-247AC | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 51 A | 50 mOhms | - 30 V, 30 V | 5 V | 130 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | |||||
Mfr: SI7615DN-T1-GE3 TTI: SI7615DN-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs RECOMMENDED ALT SI76 | 12,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 3.1 mOhms | - 12 V, 12 V | 1.5 V | 183 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7615DN-GE3 | |||
Mfr: SIHD186N60EF-GE3 TTI: SIHD186N60EF-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs TO252 600V 19A N-CH MOSFET | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 19 A | 201 mOhms | - 30 V, 30 V | 3 V | 21 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | |||||
Mfr: SI7108DN-T1-GE3 TTI: SI7108DN-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs 20V 22A 3.8W 4.9mohm @ 10V | 15,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 22 A | 4.9 mOhms | - 16 V, 16 V | 2 V | 20 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7108DN-GE3 | |||
Mfr: SIHG23N60E-GE3 TTI: SIHG23N60E-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 2,500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 23 A | 158 mOhms | - 30 V, 30 V | 4 V | 63 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | |||||
Mfr: SUD23N06-31L-T4BE3 TTI: SUD23N06-31L-T4BE3 Vishay / Siliconix Availability: 2,500In StockMOSFETs TO252 N-CH 60V 9.1A | 2,500In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 23 A | 31 mOhms | - 20 V, 20 V | 3 V | 11 nC | - 55 C | + 175 C | 100 W | Enhancement | Reel | SUD23N06-31L-T4-E3 | ||||
Mfr: SIHA15N50E-E3 TTI: SIHA15N50E-E3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 500V Vds 30V Vgs TO-220 FULLPAK | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 550 V | 14.5 A | 243 mOhms | - 30 V, 30 V | 4 V | 33 nC | - 55 C | + 150 C | 33 W | Enhancement | Tube | |||||
Mfr: SI1480DH-T1-BE3 TTI: SI1480DH-T1-BE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT363 100V 2.6A N-CH MOSFET | 6,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 100 V | 2.6 A | 200 mOhms | - 20 V, 20 V | 3 V | 5 nC | - 55 C | + 150 C | 2.8 W | Enhancement | TrenchFET | Reel | SI1480DH-T1-GE3 | |||
Mfr: SIHP12N60E-BE3 TTI: SIHP12N60E-BE3 Vishay Availability: 11,000In StockMOSFETs TO220 600V 12A N-CH MOSFET | 11,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 380 mOhms | - 30 V, 30 V | 4 V | 29 nC | - 55 C | + 150 C | 147 W | Enhancement | Tube | SIHP12N60E-GE3 SIHP12N60E-E3 | ||||
Mfr: SI7370DP-T1-GE3 TTI: SI7370DP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 9.6 A | 11 mOhms | - 20 V, 20 V | 4 V | 57 nC | - 55 C | + 150 C | 5.2 W | Enhancement | TrenchFET | Reel | SI7370DP-GE3 | |||
Mfr: SI1424EDH-T1-BE3 TTI: SI1424EDH-T1-BE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs SOT363 N-CH 20V 4A | 12,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 20 V | 4 A | 33 mOhms | - 8 V, 8 V | 1 V | 18 nC | - 55 C | + 150 C | 1.56 W | Enhancement | TrenchFET | Reel | SI1424EDH-T1-GE3 | |||
Mfr: SIHP186N60EF-GE3 TTI: SIHP186N60EF-GE3 Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 600V 18A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 18 A | 225 mOhms | - 30 V, 30 V | 5 V | 65 nC | - 55 C | + 150 C | 223 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIRS700DP-T1-GE3 TTI: SIRS700DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs SOT669 100V 120A N-CH MOSFET | 6,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 100 V | 120 A | 3.2 mOhms | - 20 V, 20 V | 4 V | 86 nC | - 55 C | + 150 C | 132 W | Enhancement | Reel | |||||
Mfr: SIHB15N60E-GE3 TTI: SIHB15N60E-GE3 Vishay / Siliconix Availability: 4,000In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 4,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 15 A | 280 mOhms | - 30 V, 30 V | 4 V | 39 nC | - 55 C | + 150 C | 180 W | Enhancement | Tube | |||||
Mfr: SI7613DN-T1-GE3 TTI: SI7613DN-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs -20V Vds 16V Vgs PowerPAK 1212-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 14 mOhms | - 16 V, 16 V | 2.2 V | 87 nC | - 50 C | + 150 C | 52.1 W | Enhancement | TrenchFET | Reel | SI7613DN-GE3 | |||
Mfr: SI7108DN-T1-E3 TTI: SI7108DN-T1-E3 Vishay Semiconductors Availability: 12,000In StockMOSFETs 20V 22A 0.0049Ohm | 12,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 22 A | 4.9 mOhms | - 16 V, 16 V | 2 V | 20 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7108DN-E3 | |||
Mfr: SIHW47N60E-GE3 TTI: SIHW47N60E-GE3 Vishay / Siliconix Availability: 960In StockMOSFETs 600V Vds 30V Vgs TO-247AD | 960In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 65 mOhms | - 30 V, 30 V | 4 V | 152 nC | - 55 C | + 150 C | 379 W | Enhancement | Tube | |||||
Mfr: SIR404DP-T1-GE3 TTI: SIR404DP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 20V Vds 12V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 60 A | 1.6 mOhms | - 12 V, 12 V | 600 mV | 36.5 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR404DP-GE3 | |||
Mfr: SI2366DS-T1-BE3 TTI: SI2366DS-T1-BE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT23 N-CH 30V 4.5A | 6,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 5.8 A | 36 mOhms | - 20 V, 20 V | 2.5 V | 3.2 nC | - 55 C | + 150 C | 2.1 W | Enhancement | Reel | SI2366DS-T1-GE3 | ||||
Mfr: IRF730APBF-BE3 TTI: IRF730APBF-BE3 Vishay / Siliconix Availability: 4,950In StockMOSFETs TO220 400V 5.5A N-CH MOSFET | 4,950In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 5.5 A | 1 Ohms | - 30 V, 30 V | 4.5 V | 22 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF730APBF | ||||
Mfr: SIHB100N60E-GE3 TTI: SIHB100N60E-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs 650V Vds; 30V Vgs D2PAK (TO-263) | 2,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 30 A | 100 mOhms | - 30 V, 30 V | 3 V | 50 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | |||||
Mfr: SIHD5N80AE-GE3 TTI: SIHD5N80AE-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs DPAK 800V 4.4A E SERIES | 6,000In Stock | Si | SMD/SMT | TO-252-4 | N-Channel | 1 Channel | 800 V | 4.4 A | 1.35 Ohms | - 30 V, 30 V | 4 V | 11 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Reel | |||||
Mfr: SIHP17N80AE-GE3 TTI: SIHP17N80AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 800V 15A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 15 A | 250 mOhms | - 30 V, 30 V | 4 V | 41 nC | - 55 C | + 155 C | 179 W | Enhancement | Reel | |||||
Mfr: IRFU9310PBF TTI: IRFU9310PBF Vishay Semiconductors Availability: 6,000In StockMOSFETs P-Chan 400V 1.8 Amp | 6,000In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 400 V | 1.8 A | 7 Ohms | - 20 V, 20 V | 4 V | 13 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube |
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