Vishay - MOSFETs
7,551 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRF9610PBF-BE3 TTI: IRF9610PBF-BE3 Vishay / Siliconix Availability: 5,950In StockMOSFETs TO220 200V 1.8A P-CH MOSFET | 5,950In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 1.8 A | 3 Ohms | 20 V | 4 V | 11 nC | - 55 C | + 150 C | 20 W | Enhancement | Tube | IRF9610PBF | ||||
Mfr: IRFR1N60ATRPBF-BE3 TTI: IRFR1N60ATRPBF-BE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO252 600V 1.4A N-CH MOSFET | 2,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 1.4 A | 7 Ohms | 30 V | 4 V | 14 nC | - 55 C | + 150 C | 36 W | Enhancement | Reel | IRFR1N60ATRPBF | ||||
Mfr: SUM85N15-19-E3 TTI: SUM85N15-19-E3 Vishay Semiconductors Availability: 800In StockMOSFETs 150V 85A 375W 19mohm @ 10V | 800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 150 V | 85 A | 19 mOhms | 20 V | 2 V | 76 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIA416DJ-T1-GE3 TTI: SIA416DJ-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SC-70 | 3,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 100 V | 11.3 A | 68 mOhms | 20 V | 1.6 V | 10 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI1036X-T1-GE3 TTI: SI1036X-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs 30V Vds 8V Vgs SC89-6 | 9,000In Stock | Si | SMD/SMT | SC-89-6 | N-Channel | 2 Channel | 30 V | 610 mA | 540 mOhms | 8 V | 400 mV | 2 nC | - 55 C | + 150 C | 220 mW | Enhancement | Reel | |||||
Mfr: IRF730APBF TTI: IRF730APBF Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 400V 5.5A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 5.5 A | 1 Ohms | 30 V | 4.5 V | 22 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF730APBF-BE3 | ||||
Mfr: SIRA04DP-T1-GE3 TTI: SIRA04DP-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 1.8 mOhms | - 16 V, 20 V | 1.1 V | 77 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA04DP-GE3 | |||
Mfr: SIHF30N60E-GE3 TTI: SIHF30N60E-GE3 Vishay Semiconductors Availability: 10,000In StockMOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | 10,000In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 600 V | 29 A | 125 mOhms | 30 V | 2.8 V | 85 nC | - 55 C | + 150 C | 37 W | Enhancement | Tube | |||||
Mfr: SIHP105N60EF-GE3 TTI: SIHP105N60EF-GE3 Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 600V 29A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 29 A | 88 mOhms | 30 V | 5 V | 35 nC | - 55 C | + 150 C | 208 W | Enhancement | TrenchFET | Bulk | ||||
Mfr: SIHG105N60EF-GE3 TTI: SIHG105N60EF-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs EF Series Pwr MOSFET w/Fast Body Diode | 1,000In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 29 A | 102 mOhms | 30 V | 5 V | 35 nC | - 55 C | + 150 C | 208 W | Enhancement | Tube | ||||||
Mfr: SIR570DP-T1-RE3 TTI: SIR570DP-T1-RE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT669 150V 77.4A N-CH MOSFET | 6,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 150 V | 77.4 A | 7.9 mOhms | 20 V | 4 V | 46.9 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SUP90100E-GE3 TTI: SUP90100E-GE3 Vishay / Siliconix Availability: 500In StockMOSFETs TO220 200V 150A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 150 A | 12.4 mOhms | 20 V | 4 V | 110 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Tube | ||||
Mfr: SISHA04DN-T1-GE3 TTI: SISHA04DN-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs PPAK1212 N-CH 30V 30.9A | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 40 A | 2.15 mOhms | - 16 V, 20 V | 1.1 V | 51 nC | - 55 C | + 150 C | 52 W | Enhancement | PowerPAK | Reel | ||||
Mfr: IRFR1N60APBF TTI: IRFR1N60APBF Vishay Semiconductors Availability: 1,275In StockMOSFETs N-Chan 600V 1.4 Amp | 1,275In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 1.4 A | 7 Ohms | 30 V | 4 V | 14 nC | - 55 C | + 150 C | 36 W | Enhancement | Tube | IRFR1N60APBF-BE3 | ||||
Mfr: IRFI9Z24GPBF TTI: IRFI9Z24GPBF Vishay Semiconductors Availability: 2,000In StockMOSFETs TO220 P-CH 60V 8.5A | 2,000In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 8.5 A | 280 mOhms | 20 V | 4 V | 19 nC | - 55 C | + 175 C | 37 W | Enhancement | Tube | |||||
Mfr: IRFR9010PBF TTI: IRFR9010PBF Vishay Semiconductors Availability: 3,000In StockMOSFETs TO252 P-CH 50V 5.3A | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 50 V | 5.3 A | 500 mOhms | 20 V | 4 V | 9.1 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
Mfr: SIZ270DT-T1-GE3 TTI: SIZ270DT-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs Dual N-Ch 100V(D-S) | 6,000In Stock | Si | SMD/SMT | N-Channel | 2 Channel | 100 V | 19.1 A, 19.5 A | 37.7 mOhms, 39.4 mOhms | 20 V | 2.4 V | 13.3 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SI6913DQ-T1-GE3 TTI: SI6913DQ-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -12V Vds 8V Vgs TSSOP-8 | 12,000In Stock | Si | SMD/SMT | TSSOP-8 | P-Channel | 2 Channel | 12 V | 5.8 A | 21 mOhms | 8 V | 400 mV | 28 nC | - 55 C | + 150 C | 1.14 W | Enhancement | TrenchFET | Reel | SI6913DQ-GE3 | |||
Mfr: IRFPG40PBF TTI: IRFPG40PBF Vishay Semiconductors Availability: 500In StockMOSFETs TO247 1KV 4.3A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 4.3 A | 3.5 Ohms | 20 V | 2 V | 120 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | |||||
Mfr: IRF820APBF TTI: IRF820APBF Vishay Semiconductors Availability: 1,900In StockMOSFETs TO220 500V 2.5A N-CH MOSFET | 1,900In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 2.5 A | 3 Ohms | 30 V | 4.5 V | 17 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | IRF820APBF-BE3 | ||||
Mfr: SIJK140E-T1-GE3 TTI: SIJK140E-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs N-CHANNEL 40-V (D-S) MOSFET | 3,000In Stock | Si | SMD/SMT | PowerPAK 10x12 | N-Channel | 1 Channel | 40 V | 795 A | 470 uOhms | 20 V | 3.5 V | 312 nC | - 55 C | + 175 C | 536 W | Enhancement | Reel | |||||
Mfr: SI5459DU-T1-GE3 TTI: SI5459DU-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds 12V Vgs PowerPAK ChipFET | 3,000In Stock | Si | SMD/SMT | ChipFET-8 | P-Channel | 1 Channel | 20 V | 8 A | 82 mOhms | 12 V | 1.4 V | 26 nC | - 55 C | + 150 C | 10.9 W | Enhancement | TrenchFET | Reel | SI5459DU-GE3 | |||
Mfr: SIS606BDN-T1-GE3 TTI: SIS606BDN-T1-GE3 Vishay / Siliconix Availability: 15,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 15,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 35.3 A | 14.5 mOhms | 20 V | 2 V | 20 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHG120N60E-GE3 TTI: SIHG120N60E-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs 650V Vds; 30V Vgs TO-247AC | 2,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 25 A | 120 mOhms | 30 V | 3 V | 45 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | |||||
Mfr: SIRC16DP-T1-GE3 TTI: SIRC16DP-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 25V Vds 20V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 25 V | 60 A | 960 uOhms | - 16 V, 20 V | 1 V | 105 nC | - 55 C | + 150 C | 54.3 W | Enhancement | TrenchFET, PowerPAK | Reel |