Vishay - MOSFETs
7,551 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHB15N80AE-GE3 TTI: SIHB15N80AE-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO263 800V 13A N-CH MOSFET | 1,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 13 A | 350 mOhms | 30 V | 4 V | 53 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | |||||
Mfr: SI8410DB-T2-E1 TTI: SI8410DB-T2-E1 Vishay Semiconductors Availability: 3,000In StockMOSFETs 20V Vds 8V Vgs MICRO FOOT 1 x 1 | 3,000In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 20 V | 5.7 A | 37 mOhms | 8 V | 850 mV | 10.4 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SI2329DS-T1-GE3 TTI: SI2329DS-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -8V Vds 5V Vgs SOT-23 | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 8 V | 6 A | 30 mOhms | 5 V | 350 mV | 19.3 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR870ADP-T1-RE3 TTI: SIR870ADP-T1-RE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 60 A | 5.5 mOhms | 20 V | 1.5 V | 80 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI5515CDC-T1-GE3 TTI: SI5515CDC-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs -20V Vds 8V Vgs 1206-8 ChipFET | 18,000In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel, P-Channel | 2 Channel | 20 V | 4 A | 36 mOhms, 100 mOhms | 8 V | 400 mV, 800 mV | 11.3 nC, 11 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI5515CDC-GE3 | |||
Mfr: SIHG73N60E-GE3 TTI: SIHG73N60E-GE3 Vishay / Siliconix Availability: 2,500In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 2,500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 73 A | 39 mOhms | 30 V | 4 V | 241 nC | - 55 C | + 150 C | 520 W | Enhancement | Tube | |||||
Mfr: SUP70030E-GE3 TTI: SUP70030E-GE3 Vishay Semiconductors Availability: 1,000In StockMOSFETs 100V Vds; 20V Vgs TO-220AB | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 150 A | 3.18 mOhms | 20 V | 2 V | 214 nC | - 55 C | + 175 C | 375 W | Enhancement | Tube | |||||
Mfr: SISH407DN-T1-GE3 TTI: SISH407DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds; +/-8V Vgs PowerPAK 1212-8SH | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8SH-8 | P-Channel | 1 Channel | 20 V | 25 A | 9.5 mOhms | 8 V | 1 V | 93.8 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET; PowerPAK | Reel | ||||
Mfr: SISS66DN-T1-GE3 TTI: SISS66DN-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs PPAK1212 N-CH 30V 49.1A | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 178.3 A | 1.38 mOhms | - 16 V, 20 V | 1 V | 57 nC | - 55 C | + 150 C | 65.8 W | Enhancement | PowerPAK | Reel | ||||
Mfr: SIUD403ED-T1-GE3 TTI: SIUD403ED-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs -20V Vds 8V Vgs PowerPAK 0806 | 9,000In Stock | Si | SMD/SMT | PowerPAK-0806-3 | P-Channel | 1 Channel | 20 V | 500 mA | 1.01 Ohms | 8 V | 900 mV | 1.7 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | |||||
Mfr: SIHF15N60E-GE3 TTI: SIHF15N60E-GE3 Vishay / Siliconix Availability: 10,000In StockMOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | 10,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 15 A | 280 mOhms | 30 V | 4 V | 39 nC | - 55 C | + 150 C | 34 W | Enhancement | Tube | |||||
Mfr: SISHA14DN-T1-GE3 TTI: SISHA14DN-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs PPAK1212 N-CH 30V 19.7A | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 20 A | 5.1 mOhms | - 16 V, 20 V | 1.1 V | 19.4 nC | - 55 C | + 150 C | 26.5 W | Enhancement | PowerPAK | Reel | ||||
Mfr: SI1967DH-T1-BE3 TTI: SI1967DH-T1-BE3 Vishay Availability: 60,000In StockMOSFETs SOT363 2PCH 20V 1A | 60,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 20 V | 1.3 A | 490 mOhms | 8 V | 2.5 V | 4 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | SI1967DH-T1-GE3 SI1967DH-T1-E3 | ||||
Mfr: SIHA6N80AE-GE3 TTI: SIHA6N80AE-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs N-CHANNEL 800V TO-220FP | 3,000In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 800 V | 5 A | 826 mOhms | 30 V | 4 V | 15 nC | - 55 C | + 150 C | 30 W | Enhancement | Reel | |||||
Mfr: SI7336ADP-T1-GE3 TTI: SI7336ADP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V 30A 5.4W 3.0mohm @ 10V | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 30 A | 3 mOhms | 20 V | 1 V | 36 nC | - 55 C | + 150 C | 5.4 W | Enhancement | TrenchFET | Reel | SI7336ADP-GE3 | |||
Mfr: SIHD11N80AE-GE3 TTI: SIHD11N80AE-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs TO252 800V 8A N-CH MOSFET | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 8 A | 450 mOhms | 30 V | 2 V | 28 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | SIHD11N80AE | ||||
Mfr: SIHB30N60ET1-GE3 TTI: SIHB30N60ET1-GE3 Vishay / Siliconix Availability: 1,600In StockMOSFETs TO263 600V 29A N-CH MOSFET | 1,600In Stock | Si | Reel | |||||||||||||||||||
Mfr: SI5935CDC-T1-E3 TTI: SI5935CDC-T1-E3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -20V Vds 8V Vgs 1206-8 ChipFET | 6,000In Stock | Si | SMD/SMT | ChipFET-8 | P-Channel | 2 Channel | 20 V | 4 A | 100 mOhms | 8 V | 1 V | 11 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI5935CDC-E3 | |||
Mfr: SISH101DN-T1-GE3 TTI: SISH101DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -30V Vds; +/-25V Vgs PowerPAK 1212-8SH | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8SH-8 | P-Channel | 1 Channel | 30 V | 35 A | 7.2 mOhms | 25 V | 2.5 V | 102 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET; PowerPAK | Reel | ||||
Mfr: SIHA11N80E-GE3 TTI: SIHA11N80E-GE3 Vishay / Siliconix Availability: 5,000In StockMOSFETs 800V Vds 30V Vgs TO-220 FULLPAK | 5,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 12 A | 380 mOhms | 30 V | 4 V | 88 nC | - 55 C | + 150 C | 34 W | Enhancement | Reel | |||||
Mfr: SISA88DN-T1-GE3 TTI: SISA88DN-T1-GE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 40.5 A | 6.7 mOhms | - 16 V, 20 V | 1.1 V | 12.5 nC | - 55 C | + 150 C | 19.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISS67DN-T1-GE3 TTI: SISS67DN-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs -30V Vds 25V Vgs PowerPAK 1212-8S | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8S-8 | P-Channel | 1 Channel | 30 V | 60 A | 4.6 mOhms | 25 V | 2.5 V | 74 nC | - 55 C | + 150 C | 65.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SUD90330E-BE3 TTI: SUD90330E-BE3 Vishay / Siliconix Availability: 4,000In StockMOSFETs N-CHANNEL 200V (D-S) | 4,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 35.1 A | 37.5 mOhms | 20 V | 4 V | 21 nC | - 55 C | + 175 C | 125 W | Enhancement | TrenchFET | Reel | SUD90330E-GE3 | |||
Mfr: IRFBC40PBF-BE3 TTI: IRFBC40PBF-BE3 Vishay / Siliconix Availability: 350In StockMOSFETs TO220 600V 6.2A N-CH MOSFET | 350In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | 20 V | 4 V | 60 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBC40PBF | ||||
Mfr: SIR4604LDP-T1-GE3 TTI: SIR4604LDP-T1-GE3 Vishay Availability: 12,000In StockMOSFETs PPAKSO8 N-CH 60V 15.6A | 12,000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | 51 A | 8.9 mOhms | 20 V | 3 V | 18.3 nC | - 55 C | + 150 C | 41.6 W | Enhancement |