Vishay - MOSFETs
7,551 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRFR430APBF TTI: IRFR430APBF Vishay Semiconductors Availability: 5,625In StockMOSFETs TO252 500V 5A N-CH MOSFET | 5,625In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 5 A | 1.7 Ohms | 30 V | 2 V | 24 nC | - 55 C | + 150 C | 110 W | Enhancement | Tube | |||||
Mfr: SI2302DDS-T1-GE3 TTI: SI2302DDS-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 20V Vds 8V Vgs SOT-23 | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | TrenchFET | Reel | SI2302DDS-T1-BE3 | |||
Mfr: SIRA12DP-T1-GE3 TTI: SIRA12DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V 4.3mOhm@10V 25A N-Ch G-IV | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 3.2 mOhms | - 16 V, 20 V | 1.1 V | 45 nC | - 55 C | + 150 C | 31 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA12DP-GE3 | |||
Mfr: SIHB6N65E-GE3 TTI: SIHB6N65E-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 650V Vds 30V Vgs D2PAK (TO-263) | 1,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 7 A | 600 mOhms | 30 V | 4 V | 24 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | |||||
Mfr: SIDR402DP-T1-GE3 TTI: SIDR402DP-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8DC | 9,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 100 A | 1.16 mOhms | - 16 V, 20 V | 2.3 V | 53 nC | - 55 C | + 150 C | 125 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHD12N50E-GE3 TTI: SIHD12N50E-GE3 Vishay / Siliconix Availability: 2,550In StockMOSFETs 500V Vds 30V Vgs DPAK (TO-252) | 2,550In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 10.5 A | 380 mOhms | 30 V | 4 V | 25 nC | - 55 C | + 150 C | 114 W | Enhancement | Tube | |||||
Mfr: IRF510PBF-BE3 TTI: IRF510PBF-BE3 Vishay / Siliconix Availability: 10,000In StockMOSFETs TO220 100V 5.6A N-CH MOSFET | 10,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | 20 V | 4 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF | ||||
Mfr: SI4401FDY-T1-GE3 TTI: SI4401FDY-T1-GE3 Vishay / Siliconix Availability: 2,500In StockMOSFETs -40V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 40 V | 14 A | 14.2 mOhms | 20 V | 1 V | 66 nC | - 55 C | + 150 C | 3.2 W | Enhancement | Reel | |||||
Mfr: SIR873DP-T1-GE3 TTI: SIR873DP-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -150V Vds 20V Vgs PowerPAK SO-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 150 V | 37 A | 39.5 mOhms | 20 V | 4 V | 25 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRFR9024PBF TTI: IRFR9024PBF Vishay Semiconductors Availability: 5,550In StockMOSFETs P-Chan 60V 8.8 Amp | 5,550In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 8.8 A | 280 mOhms | 20 V | 2 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: SI4948BEY-T1-GE3 TTI: SI4948BEY-T1-GE3 Vishay Semiconductors Availability: 20,000In StockMOSFETs -60V Vds 20V Vgs SO-8 | 20,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 60 V | 3.1 A | 120 mOhms | 20 V | 3 V | 22 nC | - 55 C | + 175 C | 2.4 W | Enhancement | TrenchFET | Reel | SI4948BEY-GE3 | |||
Mfr: SIHG065N60E-GE3 TTI: SIHG065N60E-GE3 Vishay Semiconductors Availability: 44,350In StockMOSFETs 650V Vds; 30V Vgs TO-247AC | 44,350In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 40 A | 65 mOhms | 30 V | 5 V | 74 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: IRF9510PBF TTI: IRF9510PBF Vishay Semiconductors Availability: 3,100In StockMOSFETs TO220 100V 4A P-CH MOSFET | 3,100In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 4 A | 1.2 Ohms | 20 V | 4 V | 8.7 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF9510PBF-BE3 | ||||
Mfr: SIR120DP-T1-RE3 TTI: SIR120DP-T1-RE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs PPAKSO8 N-CH 80V 24.7A | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 106 A | 3.55 mOhms | 20 V | 2 V | 62.5 nC | - 55 C | + 150 C | 100 W | Enhancement | PowerPAK | Reel | ||||
Mfr: SIHG47N60EF-GE3 TTI: SIHG47N60EF-GE3 Vishay / Siliconix Availability: 450In StockMOSFETs RECOMMENDED ALT SIHW | 450In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 65 mOhms | 30 V | 2 V | 228 nC | - 55 C | + 150 C | 379 W | Enhancement | Tube | |||||
Mfr: SI7772DP-T1-GE3 TTI: SI7772DP-T1-GE3 Vishay Semiconductors Availability: 33,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 33,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 35.6 A | 13 mOhms | 20 V | 2.5 V | 18.5 nC | - 55 C | + 150 C | 29.8 W | Enhancement | TrenchFET | Reel | SI7772DP-GE3 | |||
Mfr: IRFZ48STRLPBF TTI: IRFZ48STRLPBF Vishay / Siliconix Availability: 1,600In StockMOSFETs TO263 N-CH 60V 50A | 1,600In Stock | Si | Reel | |||||||||||||||||||
Mfr: IRFIBE30GPBF TTI: IRFIBE30GPBF Vishay Semiconductors Availability: 300In StockMOSFETs N-Channel Power MOSFET 2.1A, 800V, 78nC | 300In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 800 V | 2.1 A | 3 Ohms | 20 V | 2 V | 78 nC | - 55 C | + 150 C | 35 W | Enhancement | Tube | |||||
Mfr: SIRA06DP-T1-GE3 TTI: SIRA06DP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 2.05 mOhms | - 16 V, 20 V | 1.1 V | 77 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA06DP-GE3 | |||
Mfr: IRF9520SPBF TTI: IRF9520SPBF Vishay Semiconductors Availability: 700In StockMOSFETs TO263 100V 6.8A P-CH MOSFET | 700In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 100 V | 6.8 A | 600 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | |||||
Mfr: SUD15N15-95-E3 TTI: SUD15N15-95-E3 Vishay Semiconductors Availability: 6,000In StockMOSFETs RECOMMENDED ALT SUD1 | 6,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 150 V | 15 A | 95 mOhms | 20 V | 2 V | 25 nC | - 55 C | + 175 C | 62 W | Enhancement | TrenchFET | Reel | SUD15N15-95-BE3 | |||
Mfr: SIHG20N50E-GE3 TTI: SIHG20N50E-GE3 Vishay Semiconductors Availability: 1,150In StockMOSFETs 500V Vds 30V Vgs TO-247AC | 1,150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 19 A | 184 mOhms | 30 V | 4 V | 46 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | |||||
Mfr: IRFR110PBF TTI: IRFR110PBF Vishay Semiconductors Availability: 2,550In StockMOSFETs N-Chan 100V 4.3 Amp | 2,550In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 4.3 A | 540 mOhms | 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | IRFR110PBF-BE3 | ||||
Mfr: SIR165DP-T1-GE3 TTI: SIR165DP-T1-GE3 Vishay / Siliconix Availability: 15,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK SO-8 | 15,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 60 A | 3.8 mOhms | 20 V | 2.3 V | 92 nC | - 55 C | + 150 C | 65.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHD240N60E-GE3 TTI: SIHD240N60E-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 600V Vds; +/-30V Vgs DPAK (TO-252) | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 12 A | 240 mOhms | 30 V | 3 V | 23 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel |