Vishay - MOSFETs
7,513 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: 2N7002K-T1-GE3 TTI: 2N7002K-T1-GE3 Vishay Semiconductors Availability: 114,000In StockMOSFETs 60V Vds 20V Vgs SOT-23 | 114,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 300 mA | 2 Ohms | - 20 V, 20 V | 1 V | 400 pC | - 55 C | + 150 C | 350 mW | Enhancement | Reel | 2N7002K-GE3 | ||||
Mfr: SUM90P10-19L-E3 TTI: SUM90P10-19L-E3 Vishay Semiconductors Availability: 24,000In StockMOSFETs 100V 90A 375W 19mohm @ 10V | 24,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 90 A | 19 mOhms | - 20 V, 20 V | 1 V | 217 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRF9640PBF TTI: IRF9640PBF Vishay Semiconductors Availability: 3,550In StockMOSFETs TO220 200V 11A P-CH MOSFET | 3,550In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | - 20 V, 20 V | 4 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF9640PBF-BE3 | ||||
1,500In Stock31,400 On Order Expected | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 20 V, 20 V | 4 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF840PBF-BE3 SIHF840-E3 | |||||
Mfr: IRFP264PBF TTI: IRFP264PBF Vishay Semiconductors Availability: 8,800In StockMOSFETs TO247 250V 38A N-CH MOSFET | 8,800In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 38 A | 75 mOhms | - 20 V, 20 V | 2 V | 210 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: SI2302CDS-T1-GE3 TTI: SI2302CDS-T1-GE3 Vishay Semiconductors Availability: 108,000In StockMOSFETs 20V Vds 8V Vgs SOT-23 | 108,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | - 8 V, 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | TrenchFET | Reel | SI2302CDS-T1-BE3 SI2302CDS-GE3 | |||
7,200In Stock1,000 On Order Expected 07-Apr-27 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 14 A | 160 mOhms | - 20 V, 20 V | 4 V | 26 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF530PBF-BE3 IRF520SPBF | |||||
Mfr: IRFBG30PBF TTI: IRFBG30PBF Vishay Semiconductors Availability: 1,450In Stock2,000 On Order Expected 03-Mar-27 MOSFETs TO220 1KV 3.1A N-CH MOSFET | 1,450In Stock2,000 On Order Expected 03-Mar-27 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 3.1 A | 5 Ohms | - 20 V, 20 V | 4 V | 80 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBG30PBF-BE3 | ||||
Mfr: IRF840SPBF TTI: IRF840SPBF Vishay Semiconductors Availability: 750In StockMOSFETs TO263 500V 8A N-CH MOSFET | 750In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 20 V, 20 V | 2 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: IRF9540PBF TTI: IRF9540PBF Vishay Semiconductors Availability: 5,200In StockMOSFETs TO220 100V 19A P-CH MOSFET | 5,200In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 19 A | 200 mOhms | - 20 V, 20 V | 4 V | 61 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRF9540PBF-BE3 | ||||
Mfr: IRFR420PBF TTI: IRFR420PBF Vishay Semiconductors Availability: 50,250In StockMOSFETs TO252 500V 3.3A N-CH MOSFET | 50,250In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 3.3 A | 3 Ohms | - 30 V, 30 V | 2 V | 17 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: IRFL110TRPBF TTI: IRFL110TRPBF Vishay Semiconductors Availability: 10,000In Stock17,500 On Order Expected 05-Aug-26 MOSFETs N-Chan 100V 1.5 Amp | 10,000In Stock17,500 On Order Expected 05-Aug-26 | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | - 20 V, 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL110TRPBF-BE3 | ||||
400In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 4.5 A | 1.5 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF830PBF-BE3 SIHF830-E3 | |||||
Mfr: IRF9520PBF TTI: IRF9520PBF Vishay Semiconductors Availability: 3,000In StockMOSFETs TO220 100V 6.8A P-CH MOSFET | 3,000In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 6.8 A | 600 mOhms | - 20 V, 20 V | 4 V | 18 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | IRF9520PBF-BE3 | ||||
Mfr: IRFP150PBF TTI: IRFP150PBF Vishay Semiconductors Availability: 950In Stock1,000 On Order Expected 19-Oct-26 MOSFETs TO247 100V 41A N-CH MOSFET | 950In Stock1,000 On Order Expected 19-Oct-26 | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 41 A | 55 mOhms | - 20 V, 20 V | 2 V | 140 nC | - 55 C | + 175 C | 230 W | Enhancement | Tube | |||||
Mfr: IRFP460APBF TTI: IRFP460APBF Vishay Semiconductors Availability: 1,575In StockMOSFETs TO247 500V 20A N-CH MOSFET | 1,575In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 20 A | 270 mOhms | - 30 V, 30 V | 2 V | 105 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: SI7469DP-T1-E3 TTI: SI7469DP-T1-E3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -80V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 80 V | 28 A | 29 mOhms | - 20 V, 20 V | 3 V | 160 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7469DP-E3 | |||
Mfr: IRF640PBF-BE3 TTI: IRF640PBF-BE3 Vishay / Siliconix Availability: 29,800In StockMOSFETs TO220 200V 18A N-CH MOSFET | 29,800In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 18 A | 180 mOhms | - 20 V, 20 V | 4 V | 7 nC | - 55 C | + 150 C | 125 mW | Enhancement | Tube | IRF640PBF | ||||
Mfr: IRFI9634GPBF TTI: IRFI9634GPBF Vishay Semiconductors Availability: 950In StockMOSFETs TO220 250V 4.1A P-CH MOSFET | 950In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 250 V | 4.1 A | 1 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 35 W | Enhancement | Tube | |||||
Mfr: IRFP250PBF TTI: IRFP250PBF Vishay Semiconductors Availability: 1,000In Stock7,000 On Order Expected MOSFETs TO247 200V 30A N-CH MOSFET | 1,000In Stock7,000 On Order Expected | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 30 A | 85 mOhms | - 20 V, 20 V | 2 V | 140 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: IRF9530PBF TTI: IRF9530PBF Vishay Semiconductors Availability: 0In Stock1,000 On Order Expected 16-Jun-27 MOSFETs TO220 100V 12A P-CH MOSFET | 0In Stock1,000 On Order Expected 16-Jun-27 | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 12 A | 300 mOhms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF9530PBF-BE3 | ||||
Mfr: IRF9Z34PBF TTI: IRF9Z34PBF Vishay Semiconductors Availability: 13,450In StockMOSFETs TO220 P-CH 60V 18A | 13,450In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 18 A | 140 mOhms | - 20 V, 20 V | 4 V | 34 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF9Z34PBF-BE3 | ||||
1,100In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | - 20 V, 20 V | 4 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF-BE3 | |||||
Mfr: SI2371EDS-T1-GE3 TTI: SI2371EDS-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs -30V Vds 12V Vgs SOT-23 | 15,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 4.8 A | 45 mOhms | - 12 V, 12 V | 1.5 V | 10.6 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2371EDS-T1-BE3 | |||
Mfr: SIS434DN-T1-GE3 TTI: SIS434DN-T1-GE3 Vishay Semiconductors Availability: 93,000In StockMOSFETs 40V Vds 20V Vgs PowerPAK 1212-8 | 93,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 35 A | 6.3 mOhms | - 20 V, 20 V | 1.2 V | 40 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS434DN-GE3 |
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