XPJ - Toshiba - MOSFETs
5 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: XPJ1R004PB,LXHQ TTI: XPJ1R004PB,LXHQ Toshiba Availability: 100In StockMOSFETs S-TOGL N-CH 40V 160A | 100In Stock | Si | Reel | ||||||||||||||||||
Mfr: XPJR6604PB,LXHQ TTI: XPJR6604PB,LXHQ Toshiba Availability: 100In StockMOSFETs 40V UMOS9 0.66mohm S-TOGL | 100In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 40 V | 200 A | 530 uOhms | - 20 V, 20 V | 3 V | 128 nC | + 175 C | 375 W | Enhancement | Reel | ||||||
100In Stock | Reel | ||||||||||||||||||||
100In Stock | Reel | ||||||||||||||||||||
Mfr: XPJ1R504PB,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 40V 1.54mOhm N-ch MOSFET AEC-Q S-TOGL | 0In Stock | Si | SMD/SMT | S-TOGL-6 | N-Channel | 1 Channel | 40 V | 120 A | 1.54 mOhms | 20 V | 3 V | 61 nC | + 175 C | 197 W | Enhancement | Reel |
