DTMOSIV - Toshiba - MOSFETs
235 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: TK16A60W,S4VX TTI: TK16A60W,S4VX Toshiba Availability: 0In Stock4,300 On Order Expected 03-Nov-26 MOSFETs N-Ch 600V 15.8A 40W DTMOSIV 1350pF 38nC | 0In Stock4,300 On Order Expected 03-Nov-26 | Si | N-Channel | 1 Channel | DTMOSIV | Tube | |||||||||||||||
Mfr: SSM3K361R,LF TTI: SSM3K361RLF Toshiba Availability: 0In Stock9,000 On Order Expected 17-Sep-26 MOSFETs SOT23 100V 3.5A N-CH MOSFET | 0In Stock9,000 On Order Expected 17-Sep-26 | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 100 V | 3.5 A | 69 mOhms | - 20 V, 20 V | 1.5 V | 3.2 nC | + 175 C | 1.2 W | Enhancement | DTMOSIV | Reel | ||||
Mfr: TK16A60W,S4VX TTI: TK16A60WS4VX Toshiba Availability: 0In Stock4,300 On Order Expected 03-Nov-26 MOSFETs TO220 600V 15.8A N-CH MOSFET | 0In Stock4,300 On Order Expected 03-Nov-26 | Si | N-Channel | 1 Channel | DTMOSIV | Tube | |||||||||||||||
Mfr: TK31V60X,LQ TTI: TK31V60X,LQ Toshiba Availability: 0In StockMOSFETs DTMOSIV-High Speed 600V 88mVGS=10V) | 0In Stock | Si | SMD/SMT | DFN8x8-5 | N-Channel | 1 Channel | 600 V | 30.8 A | 78 mOhms | - 30 V, 30 V | 3.5 V | 65 nC | - 55 C | + 150 C | 240 W | Enhancement | DTMOSIV-H | Reel | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 38.8 A | 62 mOhms | - 30 V, 30 V | 3 V | 135 nC | - 55 C | + 150 C | 270 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK62N60X,S1F TTI: TK62N60X,S1F Toshiba Availability: 0In StockMOSFETs DTMOSIV-High Speed 600V 40mOhmmax | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 61.8 A | 33 mOhms | - 30 V, 30 V | 3.5 V | 135 nC | - 55 C | + 150 C | 400 W | Enhancement | DTMOSIV-H | Tube | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 6.8 A | 640 mOhms | - 30 V, 30 V | 2.5 V | 15 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 650 V | 6.8 A | 660 mOhms | - 30 V, 30 V | 2.5 V | 15 nC | - 55 C | + 150 C | 60 W | Enhancement | DTMOSIV | Reel | ||||
0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 650 V | 5.8 A | 890 mOhms | - 30 V, 30 V | 2.5 V | 11 nC | - 55 C | + 150 C | 60 W | Enhancement | DTMOSIV | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 11.5 A | 300 mOhms | - 30 V, 30 V | 2.7 V | 25 nC | - 55 C | + 150 C | 35 W | Enhancement | DTMOSIV | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 15.8 A | 230 mOhms | - 30 V, 30 V | 3 V | 43 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Reel | ||||
0In Stock | Si | SMD/SMT | DFN8x8-5 | N-Channel | 1 Channel | 600 V | 20 A | 156 mOhms | - 30 V, 30 V | 3 V | 55 nC | - 55 C | + 150 C | 156 W | Enhancement | DTMOSIV | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 15.8 A | 180 mOhms | - 30 V, 30 V | 3 V | 43 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Tube | ||||
0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 650 V | 7.8 A | 550 mOhms | - 30 V, 30 V | 2.5 V | 16 nC | - 55 C | + 150 C | 80 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK20J60W,S1VE TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-3PN PD=165W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 20 A | 155 mOhms | - 30 V, 30 V | 3.7 V | 48 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tray | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 5.8 A | 850 mOhms | - 30 V, 30 V | 2.5 V | 11 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 27.6 A | 110 mOhms | - 30 V, 30 V | 2.5 V | 75 nC | - 55 C | + 150 C | 230 W | Enhancement | DTMOSIV | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 27.6 A | 94 mOhms | - 30 V, 30 V | 2.5 V | 75 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 650 V | 5.8 A | 890 mOhms | - 30 V, 30 V | 2.5 V | 11 nC | - 55 C | + 150 C | 60 W | Enhancement | DTMOSIV | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 9.3 A | 430 mOhms | - 30 V, 30 V | 2.5 V | 20 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | ||||
Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 6.5 A | 950 mOhms | - 20 V, 20 V | 3 V | 13 nC | - 55 C | + 150 C | 35 W | Enhancement | DTMOSIV | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 8 A | 440 mOhms | - 30 V, 30 V | 3 V | 22 nC | - 55 C | + 150 C | 80 W | Enhancement | DTMOSIV | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 9.7 A | 350 mOhms | - 30 V, 30 V | 3 V | 25 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK49N65W5,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO247(OS) PD=400W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 49.2 A | 57 mOhms | - 30 V, 30 V | 4.5 V | 185 nC | - 55 C | + 150 C | 400 W | Enhancement | DTMOSIV | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 27.6 A | 94 mOhms | - 30 V, 30 V | 2.5 V | 75 nC | - 55 C | + 150 C | 230 W | Enhancement | DTMOSIV | Tube |
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