Toshiba - MOSFETs
3,378 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | DPAK-2 (TO-252-2) | N-Channel | 1 Channel | 80 V | 62 A | 6.9 mOhms | - 20 V, 20 V | 3.5 V | 39 nC | + 175 C | 89 W | Enhancement | Reel | TK6R9P08QM,RQ(S2 | ||||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 30 V | 150 A | 890 uOhms | - 20 V, 20 V | 1.1 V | 110 nC | - 55 C | + 175 C | 170 W | Enhancement | U-MOSIX-H | Reel | |||||
Mfr: SSM6K513NU,LF TTI: SSM6K513NU,LF Toshiba Availability: 0In StockMOSFETs Small Low ON Resistane MOSFETs | 0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 1 Channel | 30 V | 15 A | 6.5 mOhms | - 20 V, 20 V | 1.1 V | 7.5 nC | - 55 C | + 150 C | 2.5 W | Enhancement | U-MOSIX-H | Reel | ||||
Mfr: SSM3K56CT,L3F TTI: SSM3K56CT,L3F Toshiba Availability: 0In StockMOSFETs Small Low ON Resistane MOSFETs | 0In Stock | Si | SMD/SMT | SOT-883-3 | N-Channel | 1 Channel | 20 V | 800 mA | 235 mOhms | - 8 V, 8 V | 400 mV | + 150 C | 500 mW | Enhancement | U-MOSVII-H | Reel | ||||||
Mfr: TPN7R506NH,L1Q TTI: TPN7R506NH,L1Q Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 30V 53A 24nC MOSFET | 0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 60 V | 53 A | 16 mOhms | - 20 V, 20 V | 4 V | 22 nC | - 55 C | + 150 C | 42 W | Enhancement | U-MOSVIII-H | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-723-3 | P-Channel | 1 Channel | 20 V | 800 mA | 390 mOhms | - 8 V, 8 V | 300 mV | 1.6 nC | + 150 C | 500 mW | Enhancement | U-MOSVI | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 150 V | 84 A | 7.2 mOhms | - 20 V, 20 V | 4.5 V | 66 nC | - 55 C | + 175 C | 230 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 3.9 A | 93 mOhms | - 8 V, 8 V | 1 V | 4.6 nC | - 55 C | + 150 C | 2 W | Enhancement | U-MOSVI | Reel | |||||
Mfr: TPH4R10ANL,L1Q TTI: TPH4R10ANL,L1Q Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 100V 92A 75nC MOSFET | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 100 V | 92 A | 3.3 mOhms | - 20 V, 20 V | 1.5 V | 75 nC | - 55 C | + 150 C | 67 W | Enhancement | U-MOSVIII-H | Reel | ||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 80 V | 116 A | 4 mOhms | - 20 V, 20 V | 4 V | 59 nC | + 150 C | 170 W | Enhancement | Reel | |||||||
Mfr: SSM3K09FU,LF TTI: SSM3K09FU,LF Toshiba Availability: Not Available OnlineMOSFETs Small-signal MOSFET ID 0.4A, VDSS 30V | Not Available Online | Si | SMD/SMT | SOT-323 | N-Channel | 1 Channel | 30 V | 400 mA | 700 mOhms | - 20 V, 20 V | 1.1 V | + 150 C | 150 mW | Enhancement | MOSVI | Reel | ||||||
Mfr: SSM5N15FE(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch Sm Sig FET 0.1A 30V 2-in-1 | 0In Stock | Si | SMD/SMT | SOT-553-5 | N-Channel | 2 Channel | 30 V | 100 mA | 4 Ohms | - 20 V, 20 V | 1.5 V | - 55 C | + 150 C | 150 mW | Enhancement | MOSVI | Reel | |||||
Mfr: SSM6J501NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs PWR MGT 1.5V Drive P-Ch MOS -20V | 0In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 1 Channel | 20 V | 10 A | 15.3 mOhms | - 8 V, 8 V | 300 mV | 29.9 nC | - 55 C | + 150 C | 2 W | Enhancement | U-MOSVI | Reel | ||||
Mfr: SSM6J503NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SM Sig P-CH MOS ID -6A -20V -8 VGSS | 0In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 1 Channel | 20 V | 6 A | 89.6 mOhms | - 8 V, 8 V | 1 V | 12.8 nC | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVI | Reel | ||||
Mfr: TK46E08N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 80V N-Ch PWR FET 80A 103W 37nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 80 A | 8.4 mOhms | - 20 V, 20 V | 37 nC | 103 W | U-MOSVIII-H | Tube | ||||||||
Mfr: TK35E08N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 80V N-Ch PWR FET 55A 72W 25nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 55 A | 12.2 mOhms | - 20 V, 20 V | 2 V | 25 nC | - 55 C | + 150 C | 72 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TJ60S06M3L(T6L1,NQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch MOS -60A -60V 100W 7760pF 0.0112 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 60 A | 11.2 mOhms | - 20 V, 10 V | 2 V | 156 nC | - 55 C | + 175 C | 100 W | Enhancement | AEC-Q100 | U-MOSVI | Reel | |||
Mfr: TK11A45D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 10A 40V 25W 410pF 0.029 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 450 V | 11 A | 500 mOhms | - 30 V, 30 V | 2 V | 20 nC | - 55 C | + 150 C | 40 W | Enhancement | MOSVII | Tube | ||||
Mfr: TK12A50D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 12A 500V 45W 1350pF 0.52 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 12 A | 520 mOhms | - 30 V, 30 V | 2 V | 25 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK6A55DA(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 5.5A 550V 35W 600pF 1.48 | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 550 V | 5.5 A | 1.48 Ohms | 35 W | MOSVII | Tube | ||||||||||
Mfr: 2SJ305TE85LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch Vth -0.5 -1.5V RDS 2.4Ohm 200mW | 0In Stock | Si | SMD/SMT | SOT-346-3 | P-Channel | 1 Channel | 30 V | 200 mA | 4 Ohms | - 20 V, 20 V | 1.5 V | - 55 C | + 150 C | 200 mW | Enhancement | Reel | ||||||
Mfr: SSM3J134TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=-3.2A VDSS=-20V | 0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 3.2 A | 93 mOhms | - 8 V, 8 V | 1 V | 4.7 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVI | Reel | ||||
Mfr: SSM3K376R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=4A VDSS=30V | 0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 30 V | 4 A | 56 mOhms | - 8 V, 12 V | 1 V | 2.2 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVII-H | Reel | |||
Mfr: TK49N65W,S1F(S TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Power MOSFET 49.2A 400W 650V | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 49.2 A | 55 mOhms | - 30 V, 30 V | 2.5 V | 160 nC | + 150 C | 400 W | Enhancement | DTMOSIV | Tube | |||||
Mfr: SSM3J168F,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=--0.4A VDSS=-60V | 0In Stock | Si | SMD/SMT | SOT-346-3 | P-Channel | 1 Channel | 60 V | 400 mA | 1.3 Ohms | - 20 V, 10 V | 2 V | 3 nC | - 55 C | + 150 C | 1.2 W | Enhancement | AEC-Q101 | U-MOSVI | Reel |
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