Toshiba - MOSFETs
3,399 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: SSM3K17FU,LF TTI: SSM3K17FU,LF Toshiba Availability: Not Available OnlineMOSFETs LowON Res MOSFET ID=0.1A VDSS=50V | Not Available Online | Si | SMD/SMT | SOT-323-3 | N-Channel | 1 Channel | 50 V | 100 mA | 20 Ohms | - 7 V, 7 V | 900 mV | - 55 C | + 150 C | 150 mW | Enhancement | AEC-Q101 | MOSV | Reel | |||
0In Stock | Si | SMD/SMT | DSOP-8 | N-Channel | 1 Channel | 75 V | 170 A | 2.5 mOhms | - 20 V, 20 V | 2 V | 72 nC | + 150 C | 142 W | Enhancement | U-MOSVIII-H | Reel | |||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 40 V | 240 A | 1.2 mOhms | - 20 V, 20 V | 2 V | 62 nC | - 55 C | + 175 C | 132 W | Enhancement | U-MOSIX-H | Reel | ||||
Mfr: SSM6L12TU,LF TTI: SSM6L12TU,LF Toshiba Availability: Not Available OnlineMOSFETs LowON Res MOSFET ID=-0.5A VDSS=-30V | Not Available Online | Si | SMD/SMT | UF-6 | N-Channel, P-Channel | 2 Channel | 20 V, 30 V | 500 mA | 120 mOhms, 210 mOhms | - 12 V, 12 V | 500 mV, 1.1 V | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | |||
0In Stock | Si | SMD/SMT | UDFN-6B | N-Channel | 1 Channel | 30 V | 6 A | 46 mOhms | - 12 V, 20 V | 2.5 V | 2.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | DSOP-8 | N-Channel | 1 Channel | 150 V | 50 A | 15.4 mOhms | - 20 V, 20 V | 2 V | 22 nC | - 55 C | + 150 C | 142 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: SSM3K56ACT,L3F TTI: SSM3K56ACT,L3F Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET ID: 1.4A, VDSS: 20V | 0In Stock | Si | SMD/SMT | CST3-3 | N-Channel | 1 Channel | 20 V | 1.4 A | 840 mOhms | - 8 V, 8 V | 400 mV | 1 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVII-H | Reel | |||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V | 260 A | 1.34 mOhms | - 20 V, 20 V | 1.5 V | 91 nC | + 175 C | 170 W | Enhancement | U-MOSIX-H | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 38.8 A | 62 mOhms | - 30 V, 30 V | 3 V | 135 nC | - 55 C | + 150 C | 270 W | Enhancement | DTMOSIV | Tube | ||||
0In Stock | Si | SMD/SMT | 2-10AG1A | N-Channel | 1 Channel | 80 V | 350 A | 830 uOhms | - 20 V, 20 V | 3.5 V | 305 nC | - 55 C | + 175 C | 750 W | Enhancement | Reel | |||||
Mfr: TPH2R306NH,L1Q TTI: TPH2R306NH,L1Q Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 60V 130A 72nC MOSFET | 0In Stock | Si | N-Channel | 1 Channel | U-MOSVIII-H | Reel | |||||||||||||||
0In Stock | Si | SMD/SMT | CST3-3 | P-Channel | 1 Channel | 20 V | 1.4 A | 4 Ohms | - 8 V, 8 V | 1 V | 1.6 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVI | Reel | ||||
Mfr: SSM3J334R,LF TTI: SSM3J334R,LF Toshiba Availability: 0In StockMOSFETs P-Ch U-MOSVI FET ID -4A -30VDSS 280pF | 0In Stock | Si | P-Channel | 1 Channel | U-MOSVI | Reel | |||||||||||||||
Mfr: TPH4R50ANH1,LQ TTI: TPH4R50ANH1,LQ Toshiba Availability: 0In StockMOSFETs UMOS8 SOP-ADV(N) 100V 4.5mohm | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 100 V | 92 A | 4.5 mOhms | - 20 V, 20 V | 4 V | 58 nC | + 150 C | 170 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 150 V | 76 A | 5 mOhms | - 20 V, 20 V | 4.5 V | 96 nC | - 55 C | + 175 C | 53 W | Enhancement | Tube | |||||
Mfr: TK1K2A60F,S4X TTI: TK1K2A60F,S4X Toshiba Availability: 0In StockMOSFETs N-Ch TT-MOSIX 600V 35W 740pF 6A | 0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 600 V | 6 A | 1.2 Ohms | - 30 V, 30 V | 2 V | 21 nC | + 150 C | 35 W | Enhancement | MOSIX | Tube | ||||
0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 150 V | 49 A | 9.7 mOhms | - 20 V, 20 V | 4.5 V | 50 nC | - 55 C | + 175 C | 45 W | Enhancement | Tube | |||||
Mfr: TPH12008NH,L1Q TTI: TPH12008NH,L1Q Toshiba Availability: 0In StockMOSFETs N-Ch 80V 1490pF 22nC 12.3mOhm 44A 48W | 0In Stock | Si | N-Channel | 1 Channel | U-MOSVIII-H | Reel | |||||||||||||||
Mfr: TK62N60X,S1F TTI: TK62N60X,S1F Toshiba Availability: 0In StockMOSFETs DTMOSIV-High Speed 600V 40mOhmmax | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 61.8 A | 33 mOhms | - 30 V, 30 V | 3.5 V | 135 nC | - 55 C | + 150 C | 400 W | Enhancement | DTMOSIV-H | Tube | |||
Mfr: SSM6N357R,LF TTI: SSM6N357R,LF Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=.65A VDSS=60V | 0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 2 Channel | 60 V | 650 mA | 1.8 Ohms | - 12 V, 12 V | 1.3 V | 1.5 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | MOSV | Reel | ||
0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 60 V | 105 A | 4.8 mOhms | - 20 V, 20 V | 1.5 V | 29 nC | - 55 C | + 175 C | 104 W | Enhancement | U-MOSIX-H | Reel | ||||
Mfr: TK33S10N1Z,LQ TTI: TK33S10N1Z,LQ Toshiba Availability: 0In StockMOSFETs UMOSVIII 100V 10m max(VGS=10V) DPAK | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 33 A | 9.7 mOhms | - 20 V, 20 V | 2 V | 28 nC | - 55 C | + 175 C | 125 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | ||
Mfr: XPH6R30ANB,L1XHQ TTI: XPH6R30ANB,L1XHQ Toshiba Availability: 0In StockMOSFETs PD=132W F=1MHZ AEC-Q101 | 0In Stock | Si | SMD/SMT | SOP-Advance-8 | N-Channel | 1 Channel | 100 V | 45 A | 6.3 mOhms | - 20 V, 20 V | 3.5 V | 52 nC | - 55 C | + 175 C | 132 W | Enhancement | AEC-Q101 | Reel | |||
0In Stock | Si | SMD/SMT | L-TOGL-9 | N-Channel | 1 Channel | 40 V | 400 A | 470 uOhms | - 20 V, 20 V | 3 V | 295 nC | + 175 C | 750 W | Enhancement | Reel | ||||||
Mfr: SSM6N58NU,LF TTI: SSM6N58NU,LF Toshiba Availability: 0In StockMOSFETs N-Ch Sm Sig FET 4A 30V 2-in-1 | 0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 2 Channel | 30 V | 4 A | 112 mOhms | - 12 V, 12 V | 1 V | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVII-H | Reel |