Toshiba - MOSFETs
3,350 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: TPH2R306NH,L1Q TTI: TPH2R306NH,L1Q Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 60V 130A 72nC MOSFET | 0In Stock | Si | N-Channel | 1 Channel | U-MOSVIII-H | Reel | ||||||||||||||||
0In Stock | Si | SMD/SMT | CST3-3 | P-Channel | 1 Channel | 20 V | 1.4 A | 4 Ohms | - 8 V, 8 V | 1 V | 1.6 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVI | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 37 A | 68 mOhms | - 30 V, 30 V | 4.5 V | 68 nC | - 55 C | + 150 C | 270 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 150 V | 84 A | 7.2 mOhms | - 20 V, 20 V | 4.5 V | 66 nC | - 55 C | + 175 C | 230 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 80 V | 116 A | 4 mOhms | - 20 V, 20 V | 4 V | 59 nC | + 150 C | 170 W | Enhancement | Reel | |||||||
Mfr: SSM3K56CT,L3F TTI: SSM3K56CT,L3F Toshiba Availability: 0In StockMOSFETs Small Low ON Resistane MOSFETs | 0In Stock | Si | SMD/SMT | SOT-883-3 | N-Channel | 1 Channel | 20 V | 800 mA | 235 mOhms | - 8 V, 8 V | 400 mV | + 150 C | 500 mW | Enhancement | U-MOSVII-H | Reel | ||||||
0In Stock | Si | SMD/SMT | DPAK-2 (TO-252-2) | N-Channel | 1 Channel | 80 V | 62 A | 6.9 mOhms | - 20 V, 20 V | 3.5 V | 39 nC | + 175 C | 89 W | Enhancement | Reel | TK6R9P08QM,RQ(S2 | ||||||
Mfr: SSM3K09FU,LF TTI: SSM3K09FU,LF Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET ID 0.4A, VDSS 30V | 0In Stock | Si | SMD/SMT | SOT-323 | N-Channel | 1 Channel | 30 V | 400 mA | 700 mOhms | - 20 V, 20 V | 1.1 V | + 150 C | 150 mW | Enhancement | MOSVI | Reel | ||||||
Mfr: TPN7R506NH,L1Q TTI: TPN7R506NH,L1Q Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 30V 53A 24nC MOSFET | 0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 60 V | 53 A | 16 mOhms | - 20 V, 20 V | 4 V | 22 nC | - 55 C | + 150 C | 42 W | Enhancement | U-MOSVIII-H | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 3.9 A | 93 mOhms | - 8 V, 8 V | 1 V | 4.6 nC | - 55 C | + 150 C | 2 W | Enhancement | U-MOSVI | Reel | |||||
0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 80 V | 86 A | 3.1 mOhms | - 20 V, 20 V | 3.5 V | 57 nC | - 55 C | + 175 C | 170 W | Enhancement | Reel | |||||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 30 V | 150 A | 890 uOhms | - 20 V, 20 V | 1.1 V | 110 nC | - 55 C | + 175 C | 170 W | Enhancement | U-MOSIX-H | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-723-3 | P-Channel | 1 Channel | 20 V | 800 mA | 390 mOhms | - 8 V, 8 V | 300 mV | 1.6 nC | + 150 C | 500 mW | Enhancement | U-MOSVI | Reel | ||||||
Mfr: TPH4R10ANL,L1Q TTI: TPH4R10ANL,L1Q Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 100V 92A 75nC MOSFET | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 100 V | 92 A | 3.3 mOhms | - 20 V, 20 V | 1.5 V | 75 nC | - 55 C | + 150 C | 67 W | Enhancement | U-MOSVIII-H | Reel | ||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 200 V | 33 A | 24 mOhms | - 20 V, 20 V | 2 V | 22 nC | - 55 C | + 150 C | 78 W | Enhancement | U-MOSVIII-H | Reel | |||||
0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 150 V | 57 A | 7.4 mOhms | - 20 V, 20 V | 4.5 V | 66 nC | - 55 C | + 175 C | 46 W | Enhancement | Tube | ||||||
Mfr: XPN6R706NC,L1XHQ TTI: XPN6R706NC,L1XHQ Toshiba Availability: 0In StockMOSFETs 100W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | TSON-Advance-8 | N-Channel | 1 Channel | 60 V | 40 A | 6.7 mOhms | - 20 V, 20 V | 2.5 V | 35 nC | + 175 C | 100 W | Enhancement | AEC-Q101 | Reel | XPN6R706NC,L1XHQ(O | ||||
Mfr: SSM3K333R,LF TTI: SSM3K333R,LF Toshiba Availability: 0In StockMOSFETs SM Sig N-CH MOS 30V 6A 20V VGSS | 0In Stock | Si | N-Channel | 1 Channel | AEC-Q100 | U-MOSVII-H | Reel | |||||||||||||||
0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 150 V | 49 A | 9.7 mOhms | - 20 V, 20 V | 4.5 V | 50 nC | - 55 C | + 175 C | 45 W | Enhancement | Tube | ||||||
Mfr: TK1K2A60F,S4X TTI: TK1K2A60F,S4X Toshiba Availability: 0In StockMOSFETs N-Ch TT-MOSIX 600V 35W 740pF 6A | 0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 600 V | 6 A | 1.2 Ohms | - 30 V, 30 V | 2 V | 21 nC | + 150 C | 35 W | Enhancement | MOSIX | Tube | |||||
Mfr: TPH12008NH,L1Q TTI: TPH12008NH,L1Q Toshiba Availability: 0In StockMOSFETs N-Ch 80V 1490pF 22nC 12.3mOhm 44A 48W | 0In Stock | Si | N-Channel | 1 Channel | U-MOSVIII-H | Reel | ||||||||||||||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 40 V | 92 A | 6 mOhms | - 20 V, 20 V | 1.4 V | 27 nC | - 55 C | + 175 C | 81 W | Enhancement | U-MOSIX-H | Reel | |||||
Mfr: TK110E65Z,S1X TTI: TK110E65Z,S1X Toshiba Availability: 0In StockMOSFETs 650V DTMOS VI TO-220 110MOHM | 0In Stock | Si | 650 V | 24 A | 92 mOhms | - 30 V, 30 V | 4 V | 40 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||||||
Mfr: SSM3J358R,LF TTI: SSM3J358R,LF Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=-6A VDSS=-20V | 0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 6 A | 17.5 mOhms | - 10 V, 10 V | 1 V | 38.5 nC | - 55 C | + 150 C | 2 W | Enhancement | U-MOSVII | Reel | ||||
Mfr: TK3R2A10PL,S4X TTI: TK3R2A10PL,S4X Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=54W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 100 A | 4.3 mOhms | - 20 V, 20 V | 2.5 V | 161 nC | - 55 C | + 175 C | 54 W | Enhancement | U-MOSIX-H | Tube |
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