Toshiba - MOSFETs
3,835 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 150 V | 120 A | 4.9 mOhms | 20 V | 4.5 V | 96 nC | - 55 C | + 175 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | CST3-3 | N-Channel | 1 Channel | 20 V | 180 mA | 1.1 Ohms | 10 V | 1 V | - 55 C | + 150 C | 100 mW | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SOT-323-3 | N-Channel | 1 Channel | 60 V | 170 mA | 3.9 Ohms | 20 V | 1.1 V | 270 pC | + 150 C | 700 mW | Enhancement | U-MOSVII-H | Reel | |||||
Mfr: SSM3K72KFS,LF TTI: SSM3K72KFS,LF Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=.3A VDSS=60V | 0In Stock | Si | SMD/SMT | SOT-416-3 | N-Channel | 1 Channel | 60 V | 300 mA | 1.05 Ohms | 20 V | 1.1 V | 600 pC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSVII-H | Reel | ||
Mfr: SSM6K514NU,LF TTI: SSM6K514NU,LF Toshiba Availability: 0In StockMOSFETs Small Low ON Resistane MOSFETs | 0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 1 Channel | 40 V | 12 A | 8.9 mOhms | 20 V | 1.4 V | 7.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | U-MOSIX-H | Reel | |||
Mfr: TK65E10N1,S1X TTI: TK65E10N1,S1X Toshiba Availability: 0In StockMOSFETs 100V N-Ch PWR FET 148A 192W 5400pF | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 148 A | 4 mOhms | 20 V | 2 V | 81 nC | - 55 C | + 150 C | 192 W | Enhancement | U-MOSVIII-H | Tube | |||
Mfr: TK3R9E10PL,S1X TTI: TK3R9E10PL,S1X Toshiba Availability: 0In StockMOSFETs TO-220 PD=230W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 100 A | 5.8 mOhms | 20 V | 2.5 V | 96 nC | - 55 C | + 175 C | 230 W | Enhancement | U-MOSIX-H | Tube | |||
0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 30 V | 122 A | 2.9 mOhms | 20 V | 1.1 V | 26 nC | - 55 C | + 175 C | 75 W | Enhancement | U-MOSIX-H | Reel | ||||
Mfr: TPH8R808QM,LQ TTI: TPH8R808QM,LQ Toshiba Availability: Not Available OnlineMOSFETs 80V UMOS9-H SOP-Advance(N) 8.8mohm | Not Available Online | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V, 80 V | 79 A | 8.8 mOhms | 20 V | 3.5 V | 26 nC | + 175 C | 109 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 100 V | 110 A | 5.6 mOhms | 20 V | 1.5 V | 52 nC | - 55 C | + 175 C | 132 W | Enhancement | U-MOSIX-H | Reel | ||||
Mfr: TPH7R204PL,LQ TTI: TPH7R204PL,LQ Toshiba Availability: 0In StockMOSFETs N-Ch 40V 1570pF 24.4nC 50A 36W | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 40 V | 72 A | 5.4 mOhms | 20 V | 1.4 V | 24 nC | - 55 C | + 175 C | 69 W | Enhancement | U-MOSIX-H | Reel | |||
Mfr: TPC8129,LQ(S TTI: TPC8129,LQ(S Toshiba Availability: 0In StockMOSFETs N-Ch -30V FET 1650pF -9A 1.9W | 0In Stock | Si | SMD/SMT | SOP-8 | P-Channel | 1 Channel | 30 V | 9 A | 28 mOhms | - 25 V, 20 V | 2 V | 39 nC | + 150 C | 1.9 W | Enhancement | U-MOSVI | Reel | ||||
Mfr: TK60S06K3L(T6L1,NQ TTI: TK60S06K3L(T6L1,NQ Toshiba Availability: Not Available OnlineMOSFETs N-Ch MOS 60A 60V 88W 2900pF 0.008 | Not Available Online | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 60 A | 8 mOhms | 20 V | 2 V | 60 nC | - 55 C | + 175 C | 88 W | Enhancement | AEC-Q100 | U-MOSIV | Reel | ||
0In Stock | Si | SMD/SMT | UDFN-6B | N-Channel | 1 Channel | 30 V | 6 A | 39.1 mOhms | - 8 V, 12 V | 1 V | 3.2 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | |||||
Mfr: TPN2R805PL,L1Q TTI: TPN2R805PL,L1Q Toshiba Availability: 0In StockMOSFETs U-MOSIX-H 45V 139A 39nC MOSFET | 0In Stock | Si | SMD/SMT | TSON-Advance-8 | N-Channel | 1 Channel | 45 V | 139 A | 2.2 mOhms | 20 V | 1.4 V | 39 nC | + 175 C | 104 W | Enhancement | U-MOSIX-H | Reel | ||||
Mfr: SSM6N35AFE,LF TTI: SSM6N35AFE,LF Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=.25A VDSS=20V | 0In Stock | Si | SMD/SMT | SOT-563-6 | N-Channel | 2 Channel | 20 V | 250 mA | 750 mOhms | 10 V | 350 mV | 340 pC | - 55 C | + 150 C | 250 mW | Enhancement | U-MOSIII | Reel | |||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V | 68 A | 9.5 mOhms | 20 V | 1.5 V | 21 nC | - 55 C | + 175 C | 81 W | Enhancement | U-MOSIX-H | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 160 A | 3.2 mOhms | 20 V | 1.5 V | 71 nC | - 55 C | + 175 C | 168 W | Enhancement | U-MOSIX-H | Tube | ||||
Mfr: SSM6N44FE,LM TTI: SSM6N44FE,LM Toshiba Availability: 0In StockMOSFETs N-Ch Sm Sig FET 0.1A 30V 2-in-1 | 0In Stock | Si | SMD/SMT | ES6-6 | N-Channel | 2 Channel | 30 V | 100 mA | 4 Ohms | 20 V | 1.5 V | - 55 C | + 150 C | 150 mW | Enhancement | AEC-Q101 | MOSVI | Reel | |||
Mfr: TPH6R004PL,LQ TTI: TPH6R004PL,LQ Toshiba Availability: 0In StockMOSFETs N-Ch 40V 2100pF 30nC 87A 81W | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 40 V | 87 A | 6 mOhms | 20 V | 2.4 V | 30 nC | - 55 C | + 175 C | 81 W | Enhancement | U-MOSIX-H | Reel | |||
Mfr: SSM3J372R,LF TTI: SSM3J372R,LF Toshiba Availability: 0In StockMOSFETs P-CH VDSS:-30V VGSS:-12/+6V ID | 0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 30 V | 6 A | 42 mOhms | - 12 V, 6 V | 1.2 V | 8.2 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | ||
0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 100 V | 40 A | 20 mOhms | 20 V | 2.5 V | 24 nC | - 55 C | + 175 C | 104 W | Enhancement | Reel | ||||||
Mfr: SSM3K341R,LXHF TTI: SSM3K341R,LXHF Toshiba Availability: 0In StockMOSFETs N Channel 60V 6A AECQ MOSFET | 0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 60 V | 6 A | 36 mOhms | 20 V | 1.5 V | 9.3 nC | - 55 C | + 175 C | 2.4 W | Enhancement | AEC-Q101 | Reel | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 38.8 A | 62 mOhms | 30 V | 3 V | 135 nC | - 55 C | + 150 C | 270 W | Enhancement | DTMOSIV | Tube | ||||
0In Stock | Si | SMD/SMT | UDFN-6B | N-Channel | 1 Channel | 30 V | 6 A | 46 mOhms | - 12 V, 20 V | 2.5 V | 2.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel |