Toshiba - MOSFETs
3,399 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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0In Stock | Si | Reel | ||||||||||||||||||||
0In Stock | Reel | XPH2R404PS,L1XHQ | ||||||||||||||||||||
0In Stock | Si | Reel | ||||||||||||||||||||
Not Available Online | Si | SMD/SMT | UF6-6 | |||||||||||||||||||
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Mfr: TPCC8009LQ(O TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs N-Ch 30V FET 25A 30W 30nC | Not Available Online | Si | SMD/SMT | TSON-Advance-8 | N-Channel | 1 Channel | 30 V | 25 A | 30 nC | 30 W | Reel | |||||||||||
Not Available Online | Si | SMD/SMT | ES6-6 | P-Channel | 1 Channel | |||||||||||||||||
Mfr: SSM3J114TU(TE85L) TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs P-Ch Sm Sig FET Id -1.8A -20V -8VGSS | Not Available Online | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 1.8 A | 220 mOhms | 1 V | 7.7 nC | 800 mW | Reel | |||||||||
Mfr: 2SK1829TE85LF TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs N-Ch Sm Sig FET Id 0.05A 20V 10V | Not Available Online | Si | SMD/SMT | SOT-323-3 | N-Channel | 20 V | 50 mA | 20 Ohms | - 10 V, 10 V | 1.5 V | 100 mW | Reel | ||||||||||
Not Available Online | Si | DTMOSIV | ||||||||||||||||||||
Not Available Online | Si | DTMOSIV | ||||||||||||||||||||
Not Available Online | Si | DTMOSIV | ||||||||||||||||||||
Not Available Online | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 3 A | 4.9 Ohms | - 30 V, 30 V | 2.5 V | 12 nC | - 55 C | + 150 C | 80 W | Enhancement | MOSVIII | ||||||
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Not Available Online | Si | DTMOSIV | ||||||||||||||||||||
Not Available Online | Si | |||||||||||||||||||||
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Not Available Online | Si | N-Channel | 2 Channel | |||||||||||||||||||
Not Available Online | Si | DTMOSIV | ||||||||||||||||||||
Not Available Online | Si | DTMOSIV | ||||||||||||||||||||
Mfr: 2SK3566(STA4,Q,M) TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs N-Ch 900V 2.5A Rdson 6.4 Ohm | Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 900 V | 2.5 A | 5.6 Ohms | - 30 V, 30 V | 2 V | 12 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube |
