Toshiba - MOSFETs
3,378 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Not Available Online | Si | SMD/SMT | PS-8 | P-Channel | 1 Channel | 40 V | 8 A | 26.8 mOhms | - 20 V, 10 V | 2 V | 44.6 nC | - 55 C | + 175 C | 2.01 W | Enhancement | AEC-Q101 | U-MOSIV | ||||
Not Available Online | Si | SMD/SMT | PS-8 | N-Channel, P-Channel | 2 Channel | 40 V | 5 A | 62.8 mOhms, 82.2 mOhms | - 20 V, 20 V | 2 V | 11.8 nC, 18 nC | - 55 C | + 175 C | 1.77 W | Enhancement | AEC-Q101 | U-MOSIV / U-MOSVI | ||||
Not Available Online | Si | U-MOSVIII-H | |||||||||||||||||||
Not Available Online | Si | U-MOSVIII-H | |||||||||||||||||||
Not Available Online | Si | AEC-Q101 | MOSVI | ||||||||||||||||||
Not Available Online | Si | AEC-Q101 | U-MOSIII | ||||||||||||||||||
Not Available Online | Si | AEC-Q101 | U-MOSVI | ||||||||||||||||||
Not Available Online | Si | MOSVII | |||||||||||||||||||
Not Available Online | Si | MOSVII | |||||||||||||||||||
Not Available Online | Si | DTMOSIV | |||||||||||||||||||
Not Available Online | Si | MOSIV | |||||||||||||||||||
Not Available Online | Si | DTMOSIV-H | |||||||||||||||||||
Not Available Online | Si | AEC-Q101 | |||||||||||||||||||
Not Available Online | Si | AEC-Q101 | |||||||||||||||||||
Not Available Online | Si | AEC-Q101 | |||||||||||||||||||
Not Available Online | Si | AEC-Q101 | |||||||||||||||||||
Not Available Online | Si | AEC-Q101 | |||||||||||||||||||
Not Available Online | Si | U-MOSVI-H | |||||||||||||||||||
Not Available Online | Si | AEC-Q101 | |||||||||||||||||||
Not Available Online | Si | Through Hole | SC-67-3 | N-Channel | 1 Channel | 900 V | 4 A | 3.5 Ohms | - 10 V, 10 V | 2 V | 26 nC | - 55 C | + 150 C | 40 W | Enhancement | MOSIV | Tube | ||||
Mfr: SSM6J26FE(TE85L,F) TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs Vds=-20V Id=500mA 6Pin | Not Available Online | Si | SMD/SMT | ES6-6 | P-Channel | 1 Channel | 20 V | 500 mA | 200 mOhms | - 8 V, 8 V | - 55 C | + 150 C | 500 mW | Enhancement | Reel | ||||||
Not Available Online | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 30 V | 13 A | 11.1 mOhms | Reel | ||||||||||||
Not Available Online | Si | ||||||||||||||||||||
Not Available Online | Si | Through Hole | TO-3PN-3 | DTMOSIV | |||||||||||||||||
Not Available Online | Si |
Added To Cart
- Mfr:{{cartPopObject.addedToCartObject.mfrPartNumber}}
- TTI:{{cartPopObject.addedToCartObject.ttiPartNumber}}
- {{cartPopObject.addedToCartObject.manufacturer}}
- Ext. Price:{{cartPopObject.addedToCartObject.extendedPrice}}
- {{cartPopObject.addedToCartObject.quantity}} @{{cartPopObject.addedToCartObject.price}}
- {{cartPopObject.addedToCartObject.numberOfReels}} reels of {{cartPopObject.addedToCartObject.partsPerReel}} @{{cartPopObject.addedToCartObject.price}}
- + $7.00 Per Reel