Toshiba - MOSFETs
3,350 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Not Available Online | Si | Through Hole | TO-247-4 | DTMOSIV | |||||||||||||||||
Not Available Online | Si | DTMOSIV | |||||||||||||||||||
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Not Available Online | Si | SMD/SMT | PS-8 | P-Channel | 1 Channel | 40 V | 8 A | 26.8 mOhms | - 20 V, 10 V | 2 V | 44.6 nC | - 55 C | + 175 C | 2.01 W | Enhancement | U-MOSIV | |||||
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Not Available Online | Si | AEC-Q101 | MOSVI | ||||||||||||||||||
Not Available Online | Si | CST3-3 | MOSVI | ||||||||||||||||||
Not Available Online | Si | AEC-Q101 | MOSVI | ||||||||||||||||||
Not Available Online | Si | MOSVI | |||||||||||||||||||
Not Available Online | Si | MOSVI | |||||||||||||||||||
Not Available Online | Si | U-MOSIX-H | |||||||||||||||||||
Not Available Online | Si | U-MOSVII-H | |||||||||||||||||||
Not Available Online | Si | AEC-Q101 | MOSVI | ||||||||||||||||||
Not Available Online | Si | U-MOSVI | |||||||||||||||||||
Not Available Online | Si | AEC-Q101 | U-MOSVI | ||||||||||||||||||
Not Available Online | Si | AEC-Q101 | U-MOSVI | ||||||||||||||||||
Not Available Online | Si | Through Hole | SC-67-3 | P-Channel | 1 Channel | 100 V | 20 A | 90 mOhms | - 20 V, 20 V | 2 V | 120 nC | - 55 C | + 150 C | 35 W | Enhancement | U-MOSVI | |||||
Not Available Online | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 90 A | 6 mOhms | - 20 V, 10 V | 1 V | 172 nC | - 55 C | + 175 C | 180 W | Enhancement | AEC-Q101 | U-MOSVI | ||||
Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 9.5 A | 35 Ohms | - 20 V, 20 V | 3 V | 19 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSVI | |||||
Not Available Online | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 9.7 A | 430 mOhms | - 30 V, 30 V | 2.7 V | 20 nC | - 55 C | + 150 C | 80 W | Enhancement | DTMOSVI | |||||
Not Available Online | Si | MOSVII |
