Toshiba - MOSFETs
3,350 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SSM6P35FE,LM TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET P-Channel | 0In Stock | Si | SMD/SMT | ES6-6 | MOSVI | Reel | ||||||||||||||||
Mfr: SSM6J214FE(TE85L,F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=-3.6A VDSS=-30V | 0In Stock | Si | SMD/SMT | SOT-563-6 | P-Channel | 1 Channel | 30 V | 3.6 A | 50 mOhms | - 12 V, 12 V | 1.2 V | 7.9 nC | - 55 C | + 150 C | 700 mW | Enhancement | U-MOSVI | Reel | ||||
Mfr: TK12A80W,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 800V 1400pF 23nC 11.5A 45W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 11.5 A | 380 mOhms | - 20 V, 20 V | 3 V | 23 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK8S06K3L(T6L1,NQ) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 8A 60V 25W 400pF 0.054 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 8 A | 54 mOhms | - 20 V, 20 V | 2 V | 10 nC | - 55 C | + 175 C | 25 W | Enhancement | AEC-Q100 | U-MOSIV | Reel | |||
Mfr: SSM6J213FE(TE85L,F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch U-MOS VI FET ID -2.6A -20V 290pF | 0In Stock | Si | SMD/SMT | ES6-6 | P-Channel | 1 Channel | 20 V | 2.6 A | 250 mOhms | - 8 V, 8 V | 1 V | 4.7 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVI | Reel | ||||
Mfr: TK62J60W,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 61.8A 400W FET 600V 3500pF 180nC | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 61.8 A | 33 mOhms | - 30 V, 30 V | 3.7 V | 180 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TPN2R703NL,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs X35PBF Power MOSFET Trans VGS4.5VVDS30V | 0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 30 V | 45 A | 3.3 mOhms | - 20 V, 20 V | 2.3 V | 21 nC | - 55 C | + 150 C | 42 W | Enhancement | U-MOSVIII-H | Reel | ||||
0In Stock | Si | SMD/SMT | ES6-6 | N-Channel, P-Channel | 2 Channel | 20 V | 100 mA, 180 mA | 20 Ohms, 44 Ohms | - 10 V, 10 V | 400 mV | - 55 C | + 150 C | 150 mW | Enhancement | AEC-Q101 | MOSVI | Reel | |||||
Mfr: SSM6N56FE,LM TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET N-Channel | 0In Stock | Si | SMD/SMT | ES6-6 | N-Channel | 2 Channel | 20 V | 800 mA | 235 mOhms, 235 mOhms | - 8 V, 8 V | 400 mV | 1 nC | - 55 C | + 150 C | 250 mW | Enhancement | U-MOSVII-H | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 38 V | 2 A | 150 mOhms | - 20 V, 20 V | 700 mV | 3 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSIV | Reel | ||||
Mfr: SSM6P15FE(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=-.1A VDSS=-30V | 0In Stock | Si | SMD/SMT | ES6-6 | P-Channel | 2 Channel | 30 V | 100 mA | 8 Ohms | - 20 V, 20 V | 1.7 V | - 55 C | + 150 C | 150 mW | Enhancement | AEC-Q100 | MOSVI | Reel | ||||
Mfr: TJ15S06M3L(T6L1,NQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch MOS 1770pF 41W 36nC -15A -60V | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 15 A | 63 mOhms | 36 nC | 41 W | AEC-Q100 | U-MOSVI | Reel | ||||||||
Mfr: TJ20S04M3L(T6L1,NQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch MOS -20A -40V 41W 1850pF 0.0222 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 20 A | 22.2 mOhms | 41 W | AEC-Q100 | U-MOSVI | Reel | |||||||||
Mfr: TJ50S06M3L(T6L1,NQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch MOS -50A -60V 90W 6290pF 0.0138 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 50 A | 13.8 mOhms | - 20 V, 10 V | 3 V | 124 nC | - 55 C | + 175 C | 90 W | Enhancement | AEC-Q100 | U-MOSVI | Reel | |||
Mfr: TK8A50D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch FET 500V 4.0s IDSS 10 uA 0.7 Ohm | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 30 V, 30 V | 2 V | 16 nC | - 55 C | + 150 C | 40 W | Enhancement | MOSVII | Tube | ||||
Mfr: SSM3J133TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET P-Channel | 0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 5.5 A | 24.9 mOhms | - 8 V, 8 V | 1 V | 12.8 nC | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVI | Reel | ||||
Mfr: TJ90S04M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 180W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 90 A | 4.3 mOhms | - 20 V, 10 V | 2 V | 172 nC | + 175 C | 180 W | Enhancement | AEC-Q101 | Reel | TJ90S04M3L,LXHQ(O | ||||
Mfr: SSM3K344R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=3A VDSS=20V | 0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 20 V | 3 A | 51 mOhms | - 8 V, 8 V | 400 mV | 2 nC | - 55 C | + 150 C | 2 W | Enhancement | U-MOSVII-H | Reel | ||||
Mfr: SSM3K44MFV,L3F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Sm-signal/Hi-Speed VESM (SOT-723) | 0In Stock | Si | SMD/SMT | VESM-3 | N-Channel | 1 Channel | 30 V | 100 mA | 4 Ohms | - 20 V, 20 V | 1.5 V | - 55 C | + 150 C | 150 mW | Enhancement | AEC-Q101 | MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 45 V | 150 A | 2.8 mOhms | - 20 V, 20 V | 1.4 V | 73 nC | + 175 C | 116 W | Enhancement | U-MOSIX-H | Reel | ||||||
0In Stock | Si | SMD/SMT | WSON-10 | N-Channel | 1 Channel | - 40 C | + 125 C | 1.84 W | Tube | |||||||||||||
Mfr: XPQ1R004PB,LXHQ TTI: XPQ1R004PB,LXHQ Toshiba Availability: 0In StockMOSFETs 40V UMOS9 L-TOGL 1mohm | 0In Stock | Reel | ||||||||||||||||||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 30 V | 124 A | 2.9 mOhms | - 20 V, 20 V | 1.1 V | 26 nC | - 55 C | + 175 C | 81 W | Enhancement | U-MOSIX-H | Reel | |||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V | 135 A | 3.5 mOhms | - 20 V, 20 V | 1.5 V | 55 nC | + 175 C | 116 W | Enhancement | U-MOSIX-H | Reel | ||||||
0In Stock | Si | SMD/SMT | DFN8x8-5 | N-Channel | 1 Channel | 650 V | 30 A | 99 mOhms | - 30 V, 30 V | 4 V | 47 nC | - 55 C | + 150 C | 230 W | Enhancement | DTMOSVI | Reel |
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