Toshiba - MOSFETs
3,378 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 1 Channel | 20 V | 2 A | 112 mOhms | - 8 V, 8 V | 300 mV | 4.6 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | |||||
Mfr: TK6A65D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch FET 650V 4.0s IDSS 10 uA .95 Ohm | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 6 A | 1.11 Ohms | - 30 V, 30 V | 2 V | 20 nC | - 55 C | + 150 C | 45 W | Enhancement | MOSVII | Tube | |||
Mfr: TK8A65D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch FET 650V 4.5s IDSS 10 uA 0.7 Ohm | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 8 A | 840 mOhms | - 30 V, 30 V | 2 V | 25 nC | - 55 C | + 150 C | 45 W | Enhancement | MOSVII | Tube | |||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 79 A | 7.7 mOhms | - 20 V, 20 V | 1.5 V | 44 nC | - 55 C | + 175 C | 93 W | Enhancement | U-MOSIX-H | Reel | ||||
0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 3 A | 103 mOhms | - 8 V, 6 V | 1 V | 4.6 nC | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 6 A | 29.8 mOhms | - 8 V, 6 V | 1 V | 12.8 nC | + 150 C | 2 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 20 V | 250 mA | 1.4 Ohms | - 10 V, 10 V | 1 V | + 150 C | 285 mW | Enhancement | U-MOSVII | Reel | ||||||
Mfr: SSM3J118TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=-1.4A VDSS=-30V | 0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 30 V | 1.4 A | 240 mOhms | - 20 V, 20 V | 2.6 V | + 150 C | 800 mW | Enhancement | AEC-Q101 | Reel | |||||
0In Stock | Si | SMD/SMT | CST3-3 | N-Channel | 1 Channel | 30 V | 100 mA | 3.6 Ohms | - 20 V, 20 V | 800 mV | - 55 C | + 150 C | 100 mW | Enhancement | U-MOSIII | Reel | |||||
Mfr: SSM6J216FE,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=--4.8A VDSS=-12V | 0In Stock | Si | SMD/SMT | SOT-563-6 | P-Channel | 1 Channel | 12 V | 4.8 A | 26 mOhms | - 8 V, 8 V | 1 V | 12.7 nC | - 55 C | + 150 C | 700 mW | Enhancement | U-MOSVI | Reel | |||
Mfr: TK160F10N1L,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 100V 160A 122nC MOSFET | 0In Stock | Si | SMD/SMT | TO-220SMW-3 | N-Channel | 1 Channel | 100 V | 160 A | 2 mOhms | - 20 V, 20 V | 2.5 V | 122 nC | + 175 C | 375 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | |||
Mfr: SSM3K347R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=2A VDSS=38V | 0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 38 V | 2 A | 280 mOhms | - 20 V, 20 V | 1.4 V | 2.5 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSIV | Reel | ||
Mfr: SSM3K44FS,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=.1A VDSS=30V | 0In Stock | Si | SMD/SMT | SOT-416-3 | N-Channel | 1 Channel | 30 V | 100 mA | 2.2 Ohms | - 20 V, 20 V | 800 mV | - 55 C | + 150 C | 150 mW | Enhancement | AEC-Q101 | MOSVI | Reel | |||
Mfr: SSM6K341NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=6A VDSS=100V | 0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 1 Channel | 60 V | 6 A | 28 mOhms | - 20 V, 20 V | 1.5 V | 9.3 nC | - 55 C | + 150 C | 1.25 W | Enhancement | U-MOSVIII-H | Reel | |||
0In Stock | Si | SMD/SMT | SOT-323-3 | N-Channel | 1 Channel | 30 V | 100 mA | 3.6 Ohms | - 20 V, 20 V | 800 mV | - 55 C | + 150 C | 150 mW | Enhancement | U-MOSIII | Reel | |||||
Mfr: TK042N65Z5,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 650V DTMOS6 HSD TO-247 42mohm | 0In Stock | Tube | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 20 A | 80 mOhms | - 30 V, 30 V | 4 V | 43 nC | + 150 C | 211 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 1 Channel | 30 V | 2.5 A | 73 mOhms | - 20 V, 20 V | 2.6 V | 16 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | |||
Mfr: TK110A10PL,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=36W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 36 A | 16 mOhms | - 20 V, 20 V | 2.5 V | 33 nC | - 55 C | + 175 C | 36 W | Enhancement | U-MOSIX-H | Tube | |||
Mfr: TK110E10PL,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220 PD=87W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 42 A | 16 mOhms | - 20 V, 20 V | 2.5 V | 33 nC | - 55 C | + 175 C | 87 W | Enhancement | U-MOSIX-H | Tube | |||
Mfr: TK16J60W,S1VE TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-3PN PD=130W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 15.8 A | 190 mOhms | - 30 V, 30 V | 3.7 V | 38 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Tray | |||
Mfr: TK1K7A60F,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=35W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 4 A | 1.7 Ohms | - 30 V, 30 V | 4 V | 16 nC | - 55 C | + 150 C | 35 W | Enhancement | MOSIX | Tube | |||
Mfr: TK20E60W5,S1VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220 PD=165W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 20 A | 175 mOhms | - 30 V, 30 V | 4.5 V | 55 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube | |||
Mfr: TK28N65W5,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-247(OS) PD=230W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 27.6 A | 130 mOhms | - 30 V, 30 V | 4.5 V | 90 nC | - 55 C | + 150 C | 230 W | Enhancement | DTMOSIV | Tube | |||
Mfr: TK5R3A06PL,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=36W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 56 A | 200 mOhms | - 20 V, 20 V | 3.5 V | 45 nC | - 55 C | + 150 C | 45 W | Enhancement | U-MOSIX-H | Tube |
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