Toshiba - MOSFETs
3,350 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 4 A | 3.5 Ohms | - 30 V, 30 V | 2.5 V | 15 nC | - 55 C | + 150 C | 35 W | Enhancement | MOSVIII | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 37 A | 63 mOhms | 30 V | 4 V | 56 nC | + 150 C | 242 W | Enhancement | Tube | ||||||
Mfr: TK024Z60Z1,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 600 V 0.024 Ohm N-ch MOSFET TO-247-4L(X) DTMOS | 0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 600 V | 80 A | 24 mOhms | 30 V | 4 V | 140 nC | + 150 C | 506 W | Enhancement | Tube | |||||
Mfr: TK042Z65Z5,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 600 V 0.042 Ohm N-ch MOSFET TO-247-4L(X) DTMOS | 0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 600 V | 55 A | 42 mOhms | 30 V | 4.5 V | 105 nC | + 150 C | 360 W | Enhancement | Tube | |||||
Mfr: TK063Z60Z1,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 600 V 0.063 Ohm N-ch MOSFET TO-247-4L(X) DTMOS | 0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 600 V | 37 A | 63 mOhms | 30 V | 4 V | 56 nC | + 150 C | 242 W | Enhancement | Tube | |||||
Mfr: TK068Z65Z5,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 650 V 0.068 Ohm N-ch MOSFET TO-247-4L(X) DTMOS | 0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 37 A | 68 mOhms | 30 V | 4.5 V | 68 nC | + 150 C | 270 W | Enhancement | Tube | |||||
Mfr: TK16A60W5,S4VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 15.8A 40W FET 600V 1350pF 43nC | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 600 V | 15.8 A | 190 mOhms | - 30 V, 30 V | 4.5 V | 43 nC | - 55 C | + 150 C | 40 W | Enhancement | DTMOSIV | Tube | |||
Mfr: TK042N65Z5,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 650V DTMOS6 HSD TO-247 42mohm | 0In Stock | Tube | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 20 A | 80 mOhms | - 30 V, 30 V | 4 V | 43 nC | + 150 C | 211 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 1 Channel | 20 V | 2 A | 112 mOhms | - 8 V, 8 V | 300 mV | 4.6 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | |||||
Mfr: TK8A65D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch FET 650V 4.5s IDSS 10 uA 0.7 Ohm | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 8 A | 840 mOhms | - 30 V, 30 V | 2 V | 25 nC | - 55 C | + 150 C | 45 W | Enhancement | MOSVII | Tube | |||
Mfr: TK110E10PL,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220 PD=87W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 42 A | 16 mOhms | - 20 V, 20 V | 2.5 V | 33 nC | - 55 C | + 175 C | 87 W | Enhancement | U-MOSIX-H | Tube | |||
Mfr: SSM3J371R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS P-ch Vdss:-20V Vgss:-8/+6V Id:-4A S | 0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 4 A | 55 mOhms | - 8 V, 6 V | 1 V | 10.4 nC | + 175 C | 2 W | Enhancement | AEC-Q101 | Reel | ||||
Mfr: SSM6N7002KFU,LXH TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS 2 in 1 Dual Nch High ESD protected | 0In Stock | Si | SMD/SMT | US6-6 | N-Channel | 1 Channel | 60 V | 300 mA | 1.5 Ohms | - 20 V, 20 V | 2.1 V | 390 pC | + 150 C | 500 mW | Enhancement | AEC-Q101 | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-323-3 | N-Channel | 1 Channel | 30 V | 100 mA | 3.6 Ohms | - 20 V, 20 V | 800 mV | - 55 C | + 150 C | 150 mW | Enhancement | U-MOSIII | Reel | |||||
Mfr: SSM3K335R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch U-MOSVI FET ID 6A 30VDSS 340pF | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 6 A | 56 mOhms | - 20 V, 20 V | 2.5 V | 2.7 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q100 | U-MOSVII-H | Reel | ||
Mfr: TPW1R005PL,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs POWER MOSFET TRANSISTOR PD=170W | 0In Stock | Si | SMD/SMT | DSOP-8 | N-Channel | 1 Channel | 45 V | 300 A | 1.65 mOhms | - 20 V, 20 V | 1.4 V | 122 nC | - 55 C | + 175 C | 170 W | Enhancement | U-MOSIX-H | Reel | |||
Mfr: SSM6K341NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=6A VDSS=100V | 0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 1 Channel | 60 V | 6 A | 28 mOhms | - 20 V, 20 V | 1.5 V | 9.3 nC | - 55 C | + 150 C | 1.25 W | Enhancement | U-MOSVIII-H | Reel | |||
0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 3 A | 103 mOhms | - 8 V, 6 V | 1 V | 4.6 nC | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 6 A | 29.8 mOhms | - 8 V, 6 V | 1 V | 12.8 nC | + 150 C | 2 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 20 V | 250 mA | 1.4 Ohms | - 10 V, 10 V | 1 V | + 150 C | 285 mW | Enhancement | U-MOSVII | Reel | ||||||
0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 250 V | 13 A | 250 mOhms | - 20 V, 20 V | 1.5 V | 25 nC | - 55 C | + 150 C | 96 W | Enhancement | MOSVII | Reel | ||||
Mfr: TK30A06N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh11.5ohm VGS10V 10uA VDS60V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 30 A | 12.2 mOhms | - 20 V, 20 V | 4 V | 16 nC | - 55 C | + 150 C | 25 W | Enhancement | U-MOSVIII-H | Tube | |||
Mfr: TPH1R403NL,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs X35PBF Power MOSFET Trans VGS4.5VVDS30V | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 30 V | 60 A | 1.4 mOhms | - 20 V, 20 V | 2.3 V | 46 nC | - 55 C | + 150 C | 64 W | Enhancement | U-MOSVIII-H | Reel |
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