Toshiba - MOSFETs
3,399 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: TJ10S04M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 27W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 10 A | 44 mOhms | - 20 V, 10 V | 3 V | 19 nC | + 175 C | 27 W | Enhancement | AEC-Q101 | Reel | TJ10S04M3L,LXHQ(O | ||||
Mfr: TJ60S04M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 90W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 60 A | 6.3 mOhms | - 20 V, 10 V | 3 V | 125 nC | + 175 C | 90 W | Enhancement | AEC-Q101 | Reel | TJ60S04M3L,LXHQ(O | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 4 A | 1.7 Ohms | - 30 V, 30 V | 2.4 V | 12 nC | - 55 C | + 150 C | 100 W | Enhancement | MOSVII | Reel | |||||
Mfr: SSM3K44MFV,L3F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Sm-signal/Hi-Speed VESM (SOT-723) | 0In Stock | Si | SMD/SMT | VESM-3 | N-Channel | 1 Channel | 30 V | 100 mA | 4 Ohms | - 20 V, 20 V | 1.5 V | - 55 C | + 150 C | 150 mW | Enhancement | AEC-Q101 | MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | TSOP-6F | N-Channel | 1 Channel | 60 V | 6 A | 36 mOhms | - 20 V, 20 V | 2.5 V | 9.3 nC | + 175 C | 3 W | Enhancement | AEC-Q101 | Reel | ||||||
Mfr: TJ80S04M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 100W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 80 A | 5.2 mOhms | - 20 V, 10 V | 3 V | 158 nC | + 175 C | 100 W | Enhancement | AEC-Q101 | Reel | TJ80S04M3L,LXHQ(O | ||||
Mfr: SSM6J771G,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch SSM -5A -20V 12V VGSS 0.035Ohm | 0In Stock | Si | SMD/SMT | WCSP6C-6 | P-Channel | 2 Channel | 20 V | 5 A | 26 mOhms | - 12 V, 12 V | 1.2 V | 9.8 nC | - 55 C | + 150 C | 5 W | Enhancement | U-MOSVI | Reel | ||||
Mfr: TK34A10N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh 8 mOhms VGS10V10uAVDS100V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 34 A | 7.9 mOhms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 35 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TPN2R703NL,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs X35PBF Power MOSFET Trans VGS4.5VVDS30V | 0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 30 V | 45 A | 3.3 mOhms | - 20 V, 20 V | 2.3 V | 21 nC | - 55 C | + 150 C | 42 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: TPN2R203NC,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs X35PBF Power MOSFET Trans VGS10V VDS30V | 0In Stock | Si | SMD/SMT | TSON-Advance-8 | N-Channel | 1 Channel | 30 V | 45 A | 1.8 mOhms | - 20 V, 20 V | 2.3 V | 34 nC | - 55 C | + 150 C | 42 W | Enhancement | U-MOSVIII | Reel | ||||
Mfr: TK10A80E,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs PLN MOS 800V 1000m (VGS=10V) TO-220SIS | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 800 V | 10 A | 700 mOhms | - 30 V, 30 V | 4 V | 46 nC | - 55 C | + 150 C | 50 W | Enhancement | MOSVIII | Tube | ||||
Mfr: TK10J80E,S1E TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs PLN MOS 800V 1000m (VGS=10V) TO-3PN | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 800 V | 10 A | 700 mOhms | - 30 V, 30 V | 4 V | 46 nC | - 55 C | + 150 C | 250 W | Enhancement | MOSVIII | Tray | ||||
Mfr: TK65S04N1L,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOSVIII 40V 4.3m max(VGS=10V) DPAK | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 40 V | 65 A | 3.3 mOhms | - 20 V, 20 V | 2.5 V | 39 nC | - 55 C | + 175 C | 68 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | |||
Mfr: TPN1110ENH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOSVIII 200V 126m (VGS=10V) TSON-ADV | 0In Stock | Si | SMD/SMT | TSON-Advance-8 | N-Channel | 1 Channel | 200 V | 13 A | 96 mOhms | - 20 V, 20 V | 4 V | 7 nC | - 55 C | + 150 C | 39 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: TPN13008NH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 80V 40A 18nC MOSFET | 0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 80 V | 40 A | 13.3 mOhms | - 20 V, 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: TPN4R203NC,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 30V 53A 24nC MOSFET | 0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 30 V | 53 A | 35 mOhms | - 20 V, 20 V | 2.3 V | 24 nC | - 55 C | + 150 C | 22 W | Enhancement | U-MOSVIII | Reel | ||||
Mfr: TK100L60W,VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV 600V 18mOhm 100A 800W 15000pF | 0In Stock | Si | Through Hole | TO-3PL-3 | N-Channel | 1 Channel | 600 V | 100 A | 15 mOhms | - 30 V, 30 V | 3.7 V | 360 nC | - 55 C | + 150 C | 797 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: SSM6L35FU(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch Sm Sig FET 0.1A -0.1A 20V 2-in1 | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 20 V | 100 mA, 180 mA | 11 Ohms | - 10 V, 10 V | 1 V | - 55 C | + 150 C | 200 mW | Enhancement | AEC-Q101 | MOSVI | Reel | ||||
Mfr: SSM5N15FU(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch Sm Sig FET 0.1A 30V 2-in-1 | 0In Stock | Si | SMD/SMT | SOT-353-5 | N-Channel | 2 Channel | 30 V | 100 mA | 4 Ohms | 1.5 V | 200 mW | Reel | ||||||||||
Mfr: SSM6P35FE,LM TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET P-Channel | 0In Stock | Si | SMD/SMT | ES6-6 | MOSVI | Reel | ||||||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 7.8 A | 530 mOhms | - 30 V, 30 V | 2.5 V | 16 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 17.3 A | 170 mOhms | - 30 V, 30 V | 2.5 V | 45 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 35 A | 80 mOhms | - 30 V, 30 V | 3 V | 115 nC | - 55 C | + 150 C | 50 W | Enhancement | DTMOSIV | Tube | |||||
Mfr: TK12A80W,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 800V 1400pF 23nC 11.5A 45W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 11.5 A | 380 mOhms | - 20 V, 20 V | 3 V | 23 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK17E80W,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 800V 2050pF 32nC 17A 180W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 17 A | 250 mOhms | - 20 V, 20 V | 3 V | 32 nC | - 55 C | + 150 C | 180 W | Enhancement | DTMOSIV | Tube |