Toshiba - MOSFETs
3,835 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: TK31Z60X,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-247-4L PD=230W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 600 V | 30.8 A | 88 mOhms | 30 V | 3.5 V | 65 nC | - 55 C | + 150 C | 230 W | Enhancement | DTMOSIV-H | Tube | ||||
Not Available Online | Si | SMD/SMT | PS-8 | N-Channel | 1 Channel | 40 V | 5 A | 31.8 mOhms | 20 V | 2 V | 11.8 nC | - 55 C | + 175 C | 1.96 W | Enhancement | AEC-Q101 | U-MOSIV | Reel | ||||
0In Stock | Si | SMD/SMT | PS-8 | N-Channel, P-Channel | 1 Channel | 40 V | 5 A | 62.8 mOhms, 82.2 mOhms | 20 V | 2 V | 11.8 nC, 18 nC | - 55 C | + 175 C | 1.77 W | Enhancement | AEC-Q101 | U-MOSIV / U-MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | TSOP-6F | N-Channel | 2 Channel | 100 V | 3.5 A | 112 mOhms | 20 V | 2.5 V | 3.6 nC | + 175 C | 2.5 W | Enhancement | AEC-Q101 | Reel | ||||||
0In Stock | Si | Reel | ||||||||||||||||||||
0In Stock | Si | SMD/SMT | CST3C-3 | P-Channel | 1 Channel | 12 V | 1 A | 370 mOhms | 10 V | 1 V | + 150 C | 500 mW | Enhancement | U-MOSVII | Reel | |||||||
Mfr: TK380A60Y,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOSV 600V 30W 590pF 9.7A | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 9.7 A | 380 mOhms | 30 V | 4 V | 20 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSV | Tube | ||||
Mfr: TK560A65Y,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOSV 650V 30W 380pF 7.0A | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 7 A | 560 mOhms | 30 V | 4 V | 14.5 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSV | Tube | ||||
Mfr: SSM6J801R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET ID=-6A VDSS=-20V | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 6 A | 32.5 mOhms | - 8 V, 6 V | 1 V | 12.8 nC | - 55 C | + 150 C | 3 W | Enhancement | U-MOSVI | Reel | ||||
Mfr: TK2R4A08QM,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOS10 TO-220SIS 80V 2.4mohm | 0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 80 V | 100 A | 2.44 mOhms | 20 V | 3.5 V | 179 nC | + 175 C | 47 W | Enhancement | Tube | TK2R4A08QM,S4X(S | |||||
Mfr: SSM3K341TU,LXHF TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs N Channel 60V 6A AECQ MOSFET | Not Available Online | Si | SMD/SMT | UFM-3 | N-Channel | 1 Channel | 60 V | 6 A | 36 mOhms | 20 V | 2.5 V | 9.3 nC | - 55 C | + 175 C | 1.8 W | Enhancement | AEC-Q101 | Reel | ||||
Mfr: TPHR6704RL,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-ch MOSFET 40V 0.00067Ohm SOP Advance(N) U-MOS11-H | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 40 V | 420 A | 0.67 Ohms | 20 V | 2 V | 88 nC | + 175 C | 210 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | TSOP-6F | N-Channel | 100 V | 2 A | 125 mOhms | 20 V | 2.5 V | 3.6 nC | + 150 C | 2 W | Enhancement | Reel | ||||||||
Mfr: SSM6K388R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-ch MOSFET, 60 V, 2 A, 155 m at 10 V, SOT-23F | 0In Stock | Si | SMD/SMT | TSOP-6F | N-Channel | 1 Channel | 60 V | 2 A | 87 mOhms | 20 V | 2.1 V | 2.66 nC | + 150 C | 3 W | Enhancement | Reel | ||||||
Mfr: SSM6K389R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-ch MOSFET, 60 V, 2 A, 155 m at 10 V, UDFN6B | 0In Stock | Si | SMD/SMT | TSOP-6F | N-Channel | 1 Channel | 60 V | 2 A | 171 mOhms | 20 V | 2.1 V | 1.84 nC | + 150 C | 3 W | Enhancement | Reel | ||||||
0In Stock | Si | 650 V | 30 A | 75 mOhms | 30 V | 4 V | 47 nC | - 55 C | + 150 C | 230 W | Enhancement | Tube | ||||||||||
0In Stock | Si | 650 V | 15 A | 158 mOhms | 30 V | 4 V | 25 nC | - 55 C | + 150 C | 130 W | Enhancement | Tube | ||||||||||
0In Stock | Si | SMD/SMT | ES6-6 | N-Channel | 1 Channel | 40 V | 1.8 A | 400 mOhms | 12 V | 500 mV | 1.1 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVII-H | Reel | |||||
Mfr: TK7A60W,S4VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 7A 30W FET 600V 490pF 15nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 7 A | 600 mOhms | 30 V | 2.7 V | 15 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | ||||
Not Available Online | Si | SMD/SMT | CST3C-3 | P-Channel | 1 Channel | 20 V | 700 mA | 500 mOhms | 10 V | 1 V | + 150 C | 500 mW | Enhancement | U-MOSVII | Reel | |||||||
Not Available Online | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 40 V | 180 A | 2.1 mOhms | 20 V | 1.4 V | 78 nC | - 55 C | + 175 C | 116 W | Enhancement | U-MOSIX-H | Reel | |||||
Mfr: TK1R4S04PB,LXHQ TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs 180W 1MHz Automotive; AEC-Q101 | Not Available Online | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 40 V | 120 A | 1.35 mOhms | 20 V | 3 V | 103 nC | + 175 C | 180 W | Enhancement | AEC-Q101 | Reel | TK1R4S04PB,LXHQ(O | ||||
Mfr: TK7R4A10PL,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=42W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 50 A | 11.2 mOhms | 20 V | 2.5 V | 44 nC | - 55 C | + 175 C | 42 W | Enhancement | U-MOSIX-H | Tube | ||||
Mfr: XPH3R114MC,L1XHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 170W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | SOP-Advance-8 | P-Channel | 1 Channel | 40 V | 100 A | 3.1 mOhms | - 20 V, 10 V | 2.1 V | 230 nC | + 175 C | 170 W | Enhancement | AEC-Q101 | Reel | XPH3R114MC,L1XHQ(O | ||||
Mfr: TK110N65Z,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET 650V 110mOhms DTMOS-VI | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 24 A | 110 mOhms | 30 V | 4 V | 40 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube |