Toshiba - MOSFETs
3,350 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: 2SJ305TE85LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch Vth -0.5 -1.5V RDS 2.4Ohm 200mW | 0In Stock | Si | SMD/SMT | SOT-346-3 | P-Channel | 1 Channel | 30 V | 200 mA | 4 Ohms | - 20 V, 20 V | 1.5 V | - 55 C | + 150 C | 200 mW | Enhancement | Reel | ||||||
Mfr: TJ30S06M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 68W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 30 A | 21.8 mOhms | - 20 V, 10 V | 3 V | 80 nC | + 175 C | 68 W | Enhancement | AEC-Q101 | Reel | TJ30S06M3L,LXHQ(O | ||||
Mfr: TK55S10N1,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOSVIII 100V 6.5m max(VGS=10V) DPAK | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 55 A | 5.5 mOhms | - 20 V, 20 V | 4 V | 49 nC | - 55 C | + 175 C | 100 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | |||
Mfr: SSM3K72KFS,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=.3A VDSS=60V | 0In Stock | Si | SMD/SMT | SOT-416-3 | N-Channel | 1 Channel | 60 V | 300 mA | 1.05 Ohms | - 20 V, 20 V | 1.1 V | 600 pC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSVII-H | Reel | |||
Mfr: SSM3K361TU,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N Channel 100V 3.5A AECQ MOSFET | 0In Stock | Si | SMD/SMT | UFM-3 | N-Channel | 1 Channel | 100 V | 3.5 A | 69 mOhms | - 20 V, 10 V | 2.5 V | 3.2 nC | - 55 C | + 175 C | 1.8 W | Enhancement | AEC-Q101 | Reel | ||||
Mfr: TK33S10N1Z,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 125W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 33 A | 9.7 mOhms | - 20 V, 20 V | 4 V | 28 nC | + 175 C | 125 W | Enhancement | AEC-Q101 | Reel | TK33S10N1Z,LXHQ(O | ||||
Mfr: SSM3K357R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=.65A VDSS=60V | 0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 60 V | 650 mA | 1.8 Ohms | - 12 V, 12 V | 1.3 V | 1.5 nC | - 55 C | + 150 C | 1.5 W | Enhancement | AEC-Q101 | MOSV | Reel | |||
Mfr: SSM6J501NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs PWR MGT 1.5V Drive P-Ch MOS -20V | 0In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 1 Channel | 20 V | 10 A | 15.3 mOhms | - 8 V, 8 V | 300 mV | 29.9 nC | - 55 C | + 150 C | 2 W | Enhancement | U-MOSVI | Reel | ||||
0In Stock | Si | AEC-Q101 | Reel | |||||||||||||||||||
Mfr: TK22A65X5,S5X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=45W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 22 A | 160 mOhms | - 30 V, 30 V | 4.5 V | 50 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV-H | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 20 A | 40 mOhms | - 30 V, 30 V | 4 V | 85 nC | + 150 C | 297 W | Enhancement | Tube | |||||||
0In Stock | Si | SMD/SMT | SOT-323-3 | N-Channel | 1 Channel | 60 V | 170 mA | 3.9 Ohms | - 20 V, 20 V | 1.1 V | 270 pC | + 150 C | 700 mW | Enhancement | U-MOSVII-H | Reel | ||||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 40 V | 120 A | 1.96 mOhms | - 20 V, 20 V | 3 V | 55 nC | + 175 C | 132 W | Enhancement | Reel | ||||||||
Mfr: SSM3J331R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch U-MOSVI FET ID -4A -20VDSS 630pF | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 4 A | 150 mOhms | - 8 V, 8 V | 1 V | 10.4 nC | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | SOP-8 | P-Channel | 1 Channel | 30 V | 45 A | 4 mOhms | - 25 V, 20 V | 2 V | 190 nC | + 150 C | 45 W | Enhancement | ||||||||
0In Stock | Si | SMD/SMT | S-Mini-3 | P-Channel | 1 Channel | 20 V | 2 A | 150 mOhms | - 8 V, 6 V | 1 V | 4.6 nC | - 55 C | + 150 C | 1.2 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | ||||
Mfr: SSM6P49NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SM Sig MOS 2 in 1 P-Ch -4A -20V 12V GS | 0In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 2 Channel | 20 V | 4 A | 157 mOhms | - 12 V, 12 V | 1.2 V | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVI | Reel | |||||
Mfr: TK40A06N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh 8.4ohm VGS10V10uAVDS60V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 40 A | 8.4 mOhms | - 20 V, 20 V | 4 V | 23 nC | - 55 C | + 150 C | 30 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TK42A12N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh7.8ohm VGS10V10uAVDS120V | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 120 V | 42 A | 7.8 mOhms | - 20 V, 20 V | 4 V | 52 nC | - 55 C | + 150 C | 35 W | Enhancement | U-MOSVIII-H | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 8 A | 440 mOhms | - 30 V, 30 V | 3 V | 22 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 17.3 A | 170 mOhms | - 30 V, 30 V | 2.5 V | 45 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 650 V | 7.8 A | 550 mOhms | - 30 V, 30 V | 2.5 V | 16 nC | - 55 C | + 150 C | 80 W | Enhancement | DTMOSIV | Tube | |||||
Mfr: SSM3J118TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=-1.4A VDSS=-30V | 0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 30 V | 1.4 A | 240 mOhms | - 20 V, 20 V | 2.6 V | + 150 C | 800 mW | Enhancement | AEC-Q101 | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 75 A | 8.2 mOhms | - 20 V, 20 V | 1.5 V | 28 nC | - 55 C | + 175 C | 81 W | Enhancement | U-MOSIX-H | Tube | |||||
Mfr: SSM3K72KFS,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs AUTO AEC-Q Low Rdson SS MOS N-ch Logic-Level Gate Drive VDSS:60V Ic:0.3A SOT-416 | 0In Stock | Si | SMD/SMT | SSM-3 | N-Channel | 1 Channel | 60 V | 300 mA | 1.65 Ohms | - 20 V, 20 V | 2.1 V | 390 pC | + 150 C | 500 mW | Enhancement | AEC-Q101 | Reel | SSM3K72KFS,LXHF(B |
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