Toshiba - MOSFETs
3,350 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: TK4R3E06PL,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 60V 3280pF 48.2nC 106A 87W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 106 A | 3.3 mOhms | - 20 V, 20 V | 1.5 V | 48.2 nC | - 55 C | + 175 C | 87 W | Enhancement | U-MOSIX-H | Tube | |||
Mfr: SSM3K376R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=4A VDSS=30V | 0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 30 V | 4 A | 56 mOhms | - 8 V, 12 V | 1 V | 2.2 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVII-H | Reel | ||
Mfr: TK31V60W5,LVQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOSIV 600V 240W 3000pF 30.8A | 0In Stock | Si | SMD/SMT | DFN8x8-5 | N-Channel | 1 Channel | 600 V | 30.8 A | 87 mOhms | - 30 V, 30 V | 3 V | 105 nC | + 150 C | 240 W | Enhancement | DTMOSIV | Reel | ||||
Mfr: SSM6N39TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=1.6A VDSS=20V | 0In Stock | Si | SMD/SMT | UF-6 | N-Channel | 2 Channel | 20 V | 1.6 A | 87 mOhms, 87 mOhms | - 10 V, 10 V | 350 mV | 7.5 nC | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | |||
0In Stock | Si | Reel | |||||||||||||||||||
Mfr: SSM6J503NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SM Sig P-CH MOS ID -6A -20V -8 VGSS | 0In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 1 Channel | 20 V | 6 A | 89.6 mOhms | - 8 V, 8 V | 1 V | 12.8 nC | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVI | Reel | |||
Mfr: TK72E12N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 120V 179A 225W UMOSVIII 130nC .0044 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 120 V | 179 A | 4.4 mOhms | - 20 V, 20 V | 2 V | 130 nC | + 150 C | 255 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TK32E12N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 60A 98W FET 120V 2000pF 34nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 120 V | 60 A | 11 mOhms | - 20 V, 20 V | 4 V | 34 nC | - 55 C | + 150 C | 98 W | Enhancement | U-MOSVIII-H | Tube | |||
Mfr: SSM5N15FE(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch Sm Sig FET 0.1A 30V 2-in-1 | 0In Stock | Si | SMD/SMT | SOT-553-5 | N-Channel | 2 Channel | 30 V | 100 mA | 4 Ohms | - 20 V, 20 V | 1.5 V | - 55 C | + 150 C | 150 mW | Enhancement | MOSVI | Reel | ||||
Mfr: TK11A45D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 10A 40V 25W 410pF 0.029 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 450 V | 11 A | 500 mOhms | - 30 V, 30 V | 2 V | 20 nC | - 55 C | + 150 C | 40 W | Enhancement | MOSVII | Tube | |||
Mfr: TK12A50D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 12A 500V 45W 1350pF 0.52 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 12 A | 520 mOhms | - 30 V, 30 V | 2 V | 25 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | |||
Mfr: TK3A65DA(STA4,QM) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 2.5A 650V 35W 490pF 2.51 | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 650 V | 2.5 A | 2.51 Ohms | 35 W | MOSVII | Tube | |||||||||
Mfr: TK6A55DA(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 5.5A 550V 35W 600pF 1.48 | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 550 V | 5.5 A | 1.48 Ohms | 35 W | MOSVII | Tube | |||||||||
Mfr: TK17A80W,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 800V 2050pF 32nC 17A 45W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 17 A | 250 mOhms | - 20 V, 20 V | 3 V | 32 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 25 A | 120 mOhms | - 30 V, 30 V | 3 V | 60 nC | - 55 C | + 150 C | 180 W | Enhancement | DTMOSIV-H | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 650 V | 5.8 A | 890 mOhms | - 30 V, 30 V | 2.5 V | 11 nC | - 55 C | + 150 C | 60 W | Enhancement | DTMOSIV | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 9.3 A | 430 mOhms | - 30 V, 30 V | 2.5 V | 20 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK46E08N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 80V N-Ch PWR FET 80A 103W 37nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 80 A | 8.4 mOhms | - 20 V, 20 V | 37 nC | 103 W | U-MOSVIII-H | Tube | |||||||
Mfr: TK35E08N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 80V N-Ch PWR FET 55A 72W 25nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 55 A | 12.2 mOhms | - 20 V, 20 V | 2 V | 25 nC | - 55 C | + 150 C | 72 W | Enhancement | U-MOSVIII-H | Tube | |||
Mfr: TK39J60W5,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 38.8A 270W FET 600V 4100pF 135nC | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 38.8 A | 55 mOhms | - 30 V, 30 V | 3.7 V | 110 nC | - 55 C | + 150 C | 270 W | Enhancement | DTMOSIV | Tube | |||
Mfr: TK12E60W,S1VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 11.5A 110W FET 600V 890pF 25nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 11.5 A | 300 mOhms | - 30 V, 30 V | 3.7 V | 25 nC | - 55 C | + 150 C | 110 W | Enhancement | DTMOSIV | Tube | |||
Mfr: TK65A10N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh 4ohm VGS10V10uAVDS100V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 65 A | 4 mOhms | - 20 V, 20 V | 4 V | 81 nC | - 55 C | + 150 C | 45 W | Enhancement | U-MOSVIII-H | Tube | |||
Mfr: TK7J90E,S1E TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs PLN MOS 900V 2000m (VGS=10V) TO-3PN | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 900 V | 7 A | 1.6 Ohms | - 30 V, 30 V | 4 V | 32 nC | - 55 C | + 150 C | 200 W | Enhancement | MOSVIII | Tray | |||
Mfr: TPH4R008NH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 80V 100A 59nC MOSFET | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 80 V | 100 A | 3.3 mOhms | - 20 V, 20 V | 4 V | 59 nC | - 55 C | + 150 C | 78 W | Enhancement | U-MOSVIII-H | Reel | |||
Mfr: TK20N60W,S1VF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOSIV 600 V 165W 1680pF 20A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 20 A | 130 mOhms | - 30 V, 30 V | 3.7 V | 48 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube |
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