Toshiba - MOSFETs
3,350 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: SSM6P36TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Sm-signal/HiSpeed2n1 UF6 (SOT-363F) | 0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 2 Channel | 20 V | 330 mA | 1.31 Ohms | - 8 V, 8 V | 1 V | 1.2 nC | + 150 C | 500 mW | Enhancement | AEC-Q101 | MOSIII | Reel | |||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 4 A | 1.7 Ohms | - 30 V, 30 V | 2.4 V | 12 nC | - 55 C | + 150 C | 100 W | Enhancement | MOSVII | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 900 V | 4.5 A | 3.1 Ohms | - 30 V, 30 V | 2.5 V | 20 nC | - 55 C | + 150 C | 40 W | Enhancement | MOSVII | Tube | ||||
0In Stock | Si | SMD/SMT | ES6-6 | N-Channel | 1 Channel | 30 V | 1.9 A | 133 mOhms | - 12 V, 12 V | 1 V | 1.9 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSIII | Reel | ||||
0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 1 Channel | 20 V | 1.5 A | 213 mOhms | - 8 V, 8 V | 1 V | 6.4 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | |||
Not Available Online | Si | Reel | |||||||||||||||||||
0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 3.2 A | 93 mOhms | - 8 V, 6 V | 1 V | 4.7 nC | + 150 C | 1 W | Enhancement | U-MOSVI | Reel | |||||
Mfr: SSM5N16FU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=0.1A VDSS=20V | 0In Stock | Si | SMD/SMT | SOT-353-5 | N-Channel | 2 Channel | 20 V | 100 mA | 3 Ohms | - 10 V, 10 V | 600 mV | + 150 C | 200 mW | Enhancement | MOSVI | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 7.8 A | 530 mOhms | - 30 V, 30 V | 2.5 V | 16 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 17.3 A | 170 mOhms | - 30 V, 30 V | 2.5 V | 45 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 35 A | 80 mOhms | - 30 V, 30 V | 3 V | 115 nC | - 55 C | + 150 C | 50 W | Enhancement | DTMOSIV | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 25 A | 99 mOhms | 30 V | 36 nC | + 150 C | 176 W | Enhancement | Tube | |||||||
Mfr: TK099E60Z1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 600 V 0.099 Ohm N-ch MOSFET TO-220 DTMOS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 25 A | 99 mOhms | 30 V | 4 V | 36 nC | + 150 C | 176 W | Enhancement | Tube | |||||
Mfr: SSM3K389R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-ch MOSFET, 60 V, 2 A, 82 m at 10 V, TSOP6F | 0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 60 V | 2 A | 171 mOhms | 20 V | 2.1 V | 1.84 nC | + 150 C | 1.7 W | Enhancement | Reel | |||||
0In Stock | Si | 650 V | 18 A | 130 mOhms | - 30 V, 30 V | 4 V | 29 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | |||||||||
0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 30 V | 2 A | 160 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 800 mW | Enhancement | Reel | |||||||
Mfr: TK13A45D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 13A 450V 45W 1350pF 0.46 | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 450 V | 13 A | 460 mOhms | 45 W | MOSVII | Tube | |||||||||
Mfr: TK4A55D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 4A 550V 35W 490pF 1.88 | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 550 V | 4 A | 1.88 Ohms | 35 W | MOSVII | ||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 5 A | 1.5 Ohms | - 30 V, 30 V | 2.4 V | 11 nC | - 55 C | + 150 C | 35 W | Enhancement | Tube | |||||
Mfr: TK8Q60W,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 600 V | 8 A | 420 mOhms | - 30 V, 30 V | 3.7 V | 18.5 nC | - 55 C | + 150 C | 80 W | DTMOSIV | Tube | ||||
Mfr: SSM5N15FU(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch Sm Sig FET 0.1A 30V 2-in-1 | 0In Stock | Si | SMD/SMT | SOT-353-5 | N-Channel | 2 Channel | 30 V | 100 mA | 4 Ohms | 1.5 V | 200 mW | Reel | |||||||||
Mfr: TK39J60W,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 38.8A 270W FET 600V 4100pF 110nC | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 38.8 A | 65 mOhms | - 30 V, 30 V | 2.7 V | 110 nC | - 55 C | + 150 C | 270 W | Enhancement | DTMOSIV | Tube | |||
Mfr: SSM6J771G,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch SSM -5A -20V 12V VGSS 0.035Ohm | 0In Stock | Si | SMD/SMT | WCSP6C-6 | P-Channel | 2 Channel | 20 V | 5 A | 26 mOhms | - 12 V, 12 V | 1.2 V | 9.8 nC | - 55 C | + 150 C | 5 W | Enhancement | U-MOSVI | Reel | |||
Mfr: TPN2R203NC,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs X35PBF Power MOSFET Trans VGS10V VDS30V | 0In Stock | Si | SMD/SMT | TSON-Advance-8 | N-Channel | 1 Channel | 30 V | 45 A | 1.8 mOhms | - 20 V, 20 V | 2.3 V | 34 nC | - 55 C | + 150 C | 42 W | Enhancement | U-MOSVIII | Reel | |||
Mfr: TK100A08N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh 2.6ohm VGS10V10uAVDS80V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 100 A | 2.6 mOhms | - 20 V, 20 V | 4 V | 130 nC | - 55 C | + 150 C | 45 W | Enhancement | U-MOSVIII-H | Tube |
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