Toshiba - MOSFETs
3,835 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: TK62N60W5,S1VF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV 600V 45mOhm 61.8A 400W 6500pF | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 61.8 A | 36 mOhms | 30 V | 3 V | 205 nC | - 55 C | + 150 C | 400 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK290A60Y,S4X TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs N-Ch DTMOSV 600V 35W 730pF 11.5A | Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 11.5 A | 290 mOhms | 30 V | 4 V | 25 nC | - 55 C | + 150 C | 35 W | Enhancement | DTMOSV | Tube | ||||
Mfr: TK034N60Z5,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 600 V 0.034 Ohm N-ch MOSFET TO-247 DTMOS | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 60 A | 34 mOhms | 30 V | 4.5 V | 105 nC | + 150 C | 360 W | Enhancement | Tube | ||||||
Mfr: TK16N60W,S1VF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV 600V 190mOhm 15.8A 130W 1350pF | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 15.8 A | 160 mOhms | 30 V | 3.7 V | 38 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK10Q60W,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOSIV 600 V 80W 700pF 20nC 9.7A | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 600 V | 9.7 A | 327 mOhms | 30 V | 3.7 V | 20 nC | - 55 C | + 150 C | 80 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK39A60W,S4VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOSIV 600 V 50W 4100pF 38.8A | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 600 V | 38.8 A | 55 mOhms | 30 V | 3.7 V | 110 nC | - 55 C | + 150 C | 50 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: SSM5N16FUTE85LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch Sm Sig FET 0.1A 20V 2-in-1 | 0In Stock | Si | SMD/SMT | SOT-353-5 | N-Channel | 2 Channel | 20 V | 100 mA | 3 Ohms | 10 V | 600 mV | - 55 C | + 150 C | 200 mW | Enhancement | Reel | ||||||
Mfr: TK100S04N1L,LQ TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs UMOSVIII 40V 2.3m max(VGS=10V) DPAK | Not Available Online | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 40 V | 100 A | 1.9 mOhms | 20 V | 2.5 V | 76 nC | - 55 C | + 175 C | 100 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | |||
Mfr: TK6A80E,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs PLN MOS 800V 1700m (VGS=10V) TO-220SIS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 6 A | 1.35 Ohms | 30 V | 4 V | 32 nC | - 55 C | + 150 C | 45 W | Enhancement | MOSVIII | Tube | ||||
Mfr: TK40E10N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 40V N0Ch PWR FET 90A 126W 3000pF | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 40 V | 90 A | 8.2 mOhms | 20 V | 126 W | U-MOSVIII-H | Tube | |||||||||
Mfr: TK31J60W5,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 30.8A 230W FET 600V 3000pF 105nC | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 30.8 A | 73 mOhms | 30 V | 3.7 V | 86 nC | - 55 C | + 150 C | 230 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK31J60W,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 30.8A 230W FET 600V 3000pF 86nC | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 30.8 A | 88 mOhms | 30 V | 105 nC | 230 W | DTMOSIV | Tube | ||||||||
Mfr: TK16E60W,S1VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 15.8A 130W FET 600V 1350pF 38nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 15.8 A | 160 mOhms | 30 V | 3.7 V | 30 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK11A50D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 500V FET Vgss 30V 45W .45 ohm | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 500 V | 11 A | 600 mOhms | 45 W | MOSVII | Tube | ||||||||||
Mfr: SSM6P41FE(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=-0.72A VDSS=-20V | 0In Stock | Si | SMD/SMT | SOT-563-6 | P-Channel | 2 Channel | 20 V | 720 mA | 300 mOhms | 8 V | 1 V | 1.76 nC | - 55 C | + 150 C | 150 mW | Enhancement | U-MOSV | Reel | ||||
Mfr: TJ80S04M3L(T6L1,NQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch MOS -80A -40V 100W 7770pF 0.0052 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 80 A | 5.2 mOhms | 100 W | AEC-Q100 | U-MOSVI | Reel | |||||||||
Mfr: TK10A55D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 500V VDSS 700V 45W 1200pF 10A | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 550 V | 10 A | 720 mOhms | 45 W | MOSVII | Tube | ||||||||||
Mfr: TK11A55D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 10A 40V 25W 410pF 520 mOhms | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 500 V | 11 A | 520 mOhms | 25 W | MOSVII | Tube | ||||||||||
Mfr: TK14A55D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 14A 550V 50W 2300pF 0.37 | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 550 V | 14 A | 370 mOhms | 50 W | MOSVII | Tube | ||||||||||
Mfr: TK6A50D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 6A 500V 35W 540pF 1.4 Ohm | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 500 V | 6 A | 1.4 Ohms | 35 W | MOSVII | Tube | ||||||||||
Mfr: TK9A55DA(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 8.5A 550V 40W 1050pF 0.86 | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 550 V | 8.5 A | 860 mOhms | 40 W | MOSVII | Tube | ||||||||||
0In Stock | Si | SMD/SMT | UFV-5 | N-Channel | 1 Channel | 30 V | 1.9 A | 133 mOhms | 12 V | 1 V | 1.9 nC | - 55 C | + 125 C | 500 mW | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 1 Channel | 30 V | 2 A | 117 mOhms | 20 V | 2.6 V | 5.3 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSII | Reel | ||||
0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 1 Channel | 20 V | 2 A | 126 mOhms | 10 V | 1 V | 3.4 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSIII | Reel | |||||
Mfr: TJ8S06M3L,LXHQ TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs 27W 1MHz Automotive; AEC-Q101 | Not Available Online | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 8 A | 104 mOhms | - 20 V, 10 V | 3 V | 19 nC | + 175 C | 27 W | Enhancement | AEC-Q101 | Reel | TJ8S06M3L,LXHQ(O |