Toshiba - MOSFETs
3,378 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: TK11S10N1L,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 65W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 11 A | 28 mOhms | - 20 V, 20 V | 1.5 V | 15 nC | - 55 C | + 175 C | 65 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | |||
Mfr: SSM3J377R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P Channel -20V -3.9A AECQ MOSFET | 0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 3.9 A | 93 mOhms | - 8 V, 6 V | 1 V | 4.6 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | Reel | ||||
Mfr: SSM3K376R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS Low RON Nch Id: 4A Vdss: 30V Pd:1W | 0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 30 V | 4 A | 56 mOhms | - 8 V, 12 V | 1 V | 2.2 nC | + 150 C | 2 W | Enhancement | AEC-Q101 | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-323-3 | N-Channel | 1 Channel | 30 V | 100 mA | 3.6 Ohms | - 20 V, 20 V | 800 mV | - 55 C | + 150 C | 150 mW | Enhancement | U-MOSIII | Reel | ||||||
Mfr: SSM3K16FU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET High Speed Switching | 0In Stock | Si | SMD/SMT | SOT-323 | N-Channel | 1 Channel | 20 V | 100 mA | 3 Ohms | - 10 V, 10 V | 600 mV | + 150 C | 150 mW | Enhancement | AEC-Q101 | MOSVI | Reel | |||||
Mfr: SSM6K388NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-ch MOSFET, 60 V, 2 A, 82 m at 10 V, UDFN6B | 0In Stock | Si | SMD/SMT | UDFN-6B | N-Channel | 1 Channel | 60 V | 2 A | 87 mOhms | 20 V | 2.1 V | 2.66 nC | + 150 C | 3 W | Enhancement | Reel | ||||||
Mfr: TJ20S04M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 41W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 20 A | 22.2 mOhms | - 20 V, 10 V | 3 V | 37 nC | + 175 C | 41 W | Enhancement | AEC-Q101 | Reel | TJ20S04M3L,LXHQ(O | ||||
0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 6 A | 29.8 mOhms | - 8 V, 6 V | 1 V | 12.8 nC | + 150 C | 2 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | |||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V | 280 A | 1 mOhms | - 20 V, 20 V | 2.5 V | 91 nC | + 175 C | 210 W | Enhancement | Reel | TPH1R306PL1,LQ(M | ||||||
Mfr: SSM3J371R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS P-ch Vdss:-20V Vgss:-8/+6V Id:-4A S | 0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 4 A | 55 mOhms | - 8 V, 6 V | 1 V | 10.4 nC | + 175 C | 2 W | Enhancement | AEC-Q101 | Reel | |||||
Mfr: SSM6N17FU(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 2-in-1 MOSFET ID=100mA VDSS=50V | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 2 Channel | 50 V | 100 mA | 20 Ohms | - 7 V, 7 V | 900 mV | - 55 C | + 150 C | 200 mW | Enhancement | AEC-Q101 | MOSV | Reel | ||||
Mfr: SSM3K347R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=2A VDSS=38V | 0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 38 V | 2 A | 280 mOhms | - 20 V, 20 V | 1.4 V | 2.5 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSIV | Reel | |||
Mfr: SSM6K341NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=6A VDSS=100V | 0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 1 Channel | 60 V | 6 A | 28 mOhms | - 20 V, 20 V | 1.5 V | 9.3 nC | - 55 C | + 150 C | 1.25 W | Enhancement | U-MOSVIII-H | Reel | ||||
0In Stock | Si | SMD/SMT | ES-6 | N-Channel, P-Channel | 2 Channel | 20 V | 800 mA | 235 mOhms, 390 mOhms | - 8 V, 8 V | 1 V | 1 nC, 1.6 nC | - 55 C | + 150 C | 150 mW | Enhancement | Reel | ||||||
Mfr: TK3R3E08QM,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOS10 TO-220AB 80V 3.3mohm | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 120 A | 3.3 mOhms | - 20 V, 20 V | 3.5 V | 110 nC | + 175 C | 230 W | Enhancement | Tube | TK3R3E08QM,S1X(S | |||||
Mfr: SSM6J808R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs AUTO AEC-Q SS MOS P-ch Logic-Level Gate Drive VDSS:-40V IC:-7A PD:1.5W TSOP6F | 0In Stock | Si | SMD/SMT | TSOP6F | P-Channel | 1 Channel | 40 V | 7 A | 48 mOhms | - 20 V, 10 V | 2 V | 24.2 nC | + 150 C | 1.5 W | AEC-Q101 | Reel | SSM6J808R,LXHF(B | |||||
Mfr: TK31A60W,S4VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 30.8A 45W FET 600V 3000pF 86nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 30.8 A | 73 mOhms | - 30 V, 30 V | 3.7 V | 86 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 75 A | 8.2 mOhms | - 20 V, 20 V | 1.5 V | 28 nC | - 55 C | + 175 C | 81 W | Enhancement | U-MOSIX-H | Tube | |||||
Mfr: TJ40S04M3L(T6L1,NQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch MOS -40A -40V 68W 4140pF 0.0091 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 40 A | 9.1 mOhms | - 20 V, 10 V | 3 V | 83 nC | - 55 C | + 175 C | 68 W | Enhancement | AEC-Q100 | U-MOSVI | Reel | |||
Mfr: TK6A65D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch FET 650V 4.0s IDSS 10 uA .95 Ohm | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 6 A | 1.11 Ohms | - 30 V, 30 V | 2 V | 20 nC | - 55 C | + 150 C | 45 W | Enhancement | MOSVII | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 25 A | 105 mOhms | - 30 V, 30 V | 2.5 V | 40 nC | - 55 C | + 150 C | 180 W | Enhancement | DTMOSIV-H | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 25 A | 105 mOhms | - 30 V, 30 V | 2.5 V | 40 nC | - 55 C | + 150 C | 180 W | Enhancement | DTMOSIV-H | Tube | |||||
0In Stock | Si | SMD/SMT | CST3-3 | N-Channel | 1 Channel | 30 V | 100 mA | 3.6 Ohms | - 20 V, 20 V | 800 mV | - 55 C | + 150 C | 100 mW | Enhancement | U-MOSIII | Reel | ||||||
Mfr: TPH3R203NL,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs X35PBF Power MOSFET Trans VGS4.5VVDS30V | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 30 V | 47 A | 3.8 mOhms | - 20 V, 20 V | 2.3 V | 21 nC | - 55 C | + 150 C | 44 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: TPH1R403NL,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs X35PBF Power MOSFET Trans VGS4.5VVDS30V | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 30 V | 60 A | 1.4 mOhms | - 20 V, 20 V | 2.3 V | 46 nC | - 55 C | + 150 C | 64 W | Enhancement | U-MOSVIII-H | Reel |
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