Toshiba - MOSFETs
3,399 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | TOLL-9 | N-Channel | 1 Channel | 650 V | 24 A | 115 mOhms | 30 V | 4.5 V | 42 nC | + 150 C | 190 W | Enhancement | Reel | |||||||
Mfr: TPH1R104PB,L1XHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 132W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | SOP-Advance-8 | N-Channel | 1 Channel | 40 V | 120 A | 1.14 mOhms | - 20 V, 20 V | 3 V | 55 nC | + 175 C | 132 W | Enhancement | AEC-Q101 | Reel | TPH1R104PB,L1XHQ(O | ||||
Mfr: TK32A12N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh11ohm VGS10V10uAVDS120V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 120 V | 32 A | 11 mOhms | - 20 V, 20 V | 4 V | 34 nC | - 55 C | + 150 C | 30 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TK17A65W,S5X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=45W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 17.3 A | 200 mOhms | - 30 V, 30 V | 3.5 V | 45 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK1K0A60F,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=40W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 7.5 A | 1 Ohms | - 30 V, 30 V | 4 V | 24 nC | - 55 C | + 150 C | 40 W | Enhancement | MOSIX | Tube | ||||
0In Stock | Si | SMD/SMT | TSOP-6F | N-Channel | 1 Channel | 100 V | 3.5 A | 69 mOhms | - 20 V, 20 V | 2.5 V | 3.2 nC | + 175 C | 3 W | Enhancement | Reel | |||||||
Mfr: TK190A60Z1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 600 V 0.190 Ohm N-ch MOSFET TO-220SIS DTMOS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 14 A | 190 mOhms | 30 V | 4 V | 20 nC | + 150 C | 40 W | Enhancement | Tube | ||||||
Mfr: SSM6L61NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET 2 in 1 Nch+Pch ID:4A | 0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel, P-Channel | 2 Channel | 20 V | 4 A | 108 mOhms, 157 mOhms | - 12 V, - 8 V, 8 V, 12 V | 400 mV, 500 mV | 3.6 nC, 6.74 nC | - 55 C | + 150 C | 2 W | Enhancement | U-MOSVII-H / U-MOSVI | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 13.7 A | 250 mOhms | - 30 V, 30 V | 3 V | 40 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Tube | |||||
Mfr: SSM3K15ACTC,L3F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SM Sig N-CH MOS 30V 0.1A 20V VGSS | 0In Stock | Si | SMD/SMT | CST3-3 | N-Channel | 1 Channel | 30 V | 100 mA | 2.3 Ohms | - 20 V, 20 V | 1.5 V | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSIII | Reel | |||||
Mfr: TK380P60Y,RQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOSV 600V 80W 590pF 9.7A | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 9.7 A | 380 mOhms | - 30 V, 30 V | 4 V | 20 nC | - 55 C | + 150 C | 80 W | Enhancement | DTMOSV | Reel | ||||
Mfr: XSM6K336NW,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-ch MOSFET, 30 V, 3.0 A, 0.095 ohm at 10V, DFN2020B(WF) | 0In Stock | Si | SMD/SMT | DFN-6 | N-Channel | 1 Channel | 30 V | 3 A | 95 mOhms | 20 V | 2.5 V | 1.7 nC | + 150 C | 3.3 W | Enhancement | Reel | ||||||
Mfr: TK290A60Y,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOSV 600V 35W 730pF 11.5A | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 11.5 A | 290 mOhms | - 30 V, 30 V | 4 V | 25 nC | - 55 C | + 150 C | 35 W | Enhancement | DTMOSV | Tube | ||||
Mfr: TK190A65Z,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET 650V 190mOhms DTMOS-VI | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 15 A | 190 mOhms | - 30 V, 30 V | 4 V | 25 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
Mfr: TK200F04N1L,LXGQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 375W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | TO-220SM-3 | N-Channel | 1 Channel | 40 V | 200 A | 900 uOhms | - 20 V, 20 V | 3 V | 214 nC | + 175 C | 375 W | Enhancement | AEC-Q101 | Reel | TK200F04N1L,LXGQ(O | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 9.5 A | 550 mOhms | - 20 V, 20 V | 3 V | 19 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSVI | Tube | |||||
Mfr: TK56E12N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 120V 112A 168W UMOSVIII 4200pF 69nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 120 V | 112 A | 5.8 mOhms | - 20 V, 20 V | 4 V | 69 nC | - 55 C | + 150 C | 168 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TK6A60W,S4VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 6.2A 30W FET 600V 390pF 12nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 680 mOhms | - 30 V, 30 V | 3.7 V | 12 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: SSM6N62TU,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS Low RON Dual Nc h Id:0.8A, Vdss: 20 | 0In Stock | Si | SMD/SMT | UF6-6 | N-Channel | 1 Channel | 20 V | 800 mA | 456 mOhms | - 8 V, 8 V | 1 V | 2 nC | + 150 C | 500 mW | Enhancement | AEC-Q101 | Reel | |||||
Mfr: TK6R8A08QM,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOS10 TO-220SIS 80V 6.8mohm | 0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 80 V | 58 A | 6.8 mOhms | - 20 V, 20 V | 3.5 V | 39 nC | + 175 C | 41 W | Enhancement | Tube | TK6R8A08QM,S4X(S | |||||
Mfr: SSM6L820R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs AUTO AEC-Q SS MOS N-ch + P-ch Low Voltage Gate Drive VDSS:30V IC:4A PD:1.5W TSOP6F | 0In Stock | Si | SMD/SMT | TSOP6F | N-Channel, P-Channel | 2 Channel | 30 V | 4 A | 39.1 mOhms, 45 mOhms | - 8 V, 12 V | 1 V | 6.7 nC | + 150 C | 1.4 W | Enhancement | AEC-Q101 | Reel | SSM6L820R,LXHF(B | ||||
Mfr: SSM3J378R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P Channel -20V -6A AECQ MOSFET | 0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 6 A | 29.8 mOhms | - 8 V, 6 V | 1 V | 12.8 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 40 V | 15 A | 17.8 mOhms | - 20 V, 20 V | 2.5 V | 10 nC | - 55 C | + 175 C | 46 W | Enhancement | AEC-Q101 | Reel | |||||
Mfr: TK16E60W,S1VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 15.8A 130W FET 600V 1350pF 38nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 15.8 A | 160 mOhms | - 30 V, 30 V | 3.7 V | 30 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Tube | ||||
0In Stock | Si | SMD/SMT | UFM-3 | N-Channel | 1 Channel | 20 V | 4.2 A | 28 mOhms | - 10 V, 10 V | 350 mV | 13.6 nC | - 55 C | + 150 C | 800 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel |