Toshiba - MOSFETs
3,835 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 25 A | 99 mOhms | 30 V | 36 nC | + 150 C | 176 W | Enhancement | Tube | ||||||||
Mfr: XPH3R908QB,L1XHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs POWER MOSFET TRANSISTOR SOP Advance(WF) PD=132W F=1MHZ | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 80 V | 80 A | 5.7 mOhms | 20 V | 3.5 V | 63 nC | + 175 C | 132 W | Enhancement | AEC-Q101 | Reel | |||||
Mfr: XPMR5904PB,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 40V 0.59mOhm N-ch MOSFET AEC-Q SOP Advance(EWF) | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 40 V | 478 A | 0.59 mOhms | 20 V | 3 V | 61 nC | + 175 C | 272 W | Enhancement | AEC-Q101 | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 7.5 A | 500 mOhms | 20 V | 1.5 V | 16 nC | - 55 C | + 150 C | 30 W | Enhancement | MOSVII | Tube | |||||
Mfr: SSM6P36TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Sm-signal/HiSpeed2n1 UF6 (SOT-363F) | 0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 2 Channel | 20 V | 330 mA | 1.31 Ohms | 8 V | 1 V | 1.2 nC | + 150 C | 500 mW | Enhancement | AEC-Q101 | MOSIII | Reel | ||||
Mfr: SSM6J422TU,LXHF TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs SMOS P-ch VDSS=-20V, VGSS=+6/-8V, ID=-4. | Not Available Online | Si | SMD/SMT | UF6-6 | P-Channel | 1 Channel | 20 V | 4 A | 42.7 mOhms | - 8 V, 6 V | 1 V | 12.8 nC | + 150 C | 1 W | Enhancement | AEC-Q101 | Reel | |||||
0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 30 V | 2 A | 160 mOhms | 20 V | - 55 C | + 150 C | 800 mW | Enhancement | Reel | ||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 5 A | 1.5 Ohms | 30 V | 2.4 V | 11 nC | - 55 C | + 150 C | 35 W | Enhancement | Tube | ||||||
Mfr: TK8A50D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch FET 500V 4.0s IDSS 10 uA 0.7 Ohm | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | 30 V | 2 V | 16 nC | - 55 C | + 150 C | 40 W | Enhancement | MOSVII | Tube | ||||
Mfr: TK4A55D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 4A 550V 35W 490pF 1.88 | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 550 V | 4 A | 1.88 Ohms | 35 W | MOSVII | |||||||||||
Mfr: TK8S06K3L(T6L1,NQ) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 8A 60V 25W 400pF 0.054 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 8 A | 54 mOhms | 20 V | 2 V | 10 nC | - 55 C | + 175 C | 25 W | Enhancement | AEC-Q100 | U-MOSIV | Reel | |||
Mfr: TJ50S06M3L(T6L1,NQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch MOS -50A -60V 90W 6290pF 0.0138 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 50 A | 13.8 mOhms | - 20 V, 10 V | 3 V | 124 nC | - 55 C | + 175 C | 90 W | Enhancement | AEC-Q100 | U-MOSVI | Reel | |||
Mfr: TK13A45D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 13A 450V 45W 1350pF 0.46 | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 450 V | 13 A | 460 mOhms | 45 W | MOSVII | Tube | ||||||||||
Mfr: TPC8134,LQ(S TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch -40V FET 1650pF -5A 1.9W 20nC | 0In Stock | Si | SMD/SMT | SOP-8 | P-Channel | 1 Channel | 40 V | 5 A | 66 mOhms | - 25 V, 20 V | 2 V | 20 nC | - 55 C | + 150 C | 1.9 W | Enhancement | U-MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | DFN2020B-6 | N-Channel | 1 Channel | 30 V | 10 A | 56 mOhms | - 8 V, 12 V | 1 V | 2.2 nC | + 150 C | 3.3 W | Enhancement | Reel | |||||||
Mfr: SSM6K809R,LXHF TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:60V IC:6.0A PD:1.5W TSOP6F | Not Available Online | Si | SMD/SMT | TSOP6F | N-Channel | 1 Channel | 60 V | 6 A | 36 mOhms | 20 V | 2.5 V | 9.3 nC | + 175 C | 1.5 W | Enhancement | AEC-Q101 | Reel | SSM6K809R,LXHF(B | ||||
Mfr: TK34A10N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh 8 mOhms VGS10V10uAVDS100V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 34 A | 7.9 mOhms | 20 V | 4 V | 38 nC | - 55 C | + 150 C | 35 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TK2R4E08QM,S1X TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs UMOS10 TO-220AB 80V 2.4mohm | Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 120 A | 2.44 mOhms | 20 V | 3.5 V | 178 nC | + 175 C | 300 W | Enhancement | Tube | TK2R4E08QM,S1X(S | |||||
Mfr: TK10E60W,S1VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 9.7A 100W FET 600V 700pF 20nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 9.7 A | 380 mOhms | 30 V | 3.7 V | 20 nC | - 55 C | + 150 C | 100 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: SSM3K7002KF,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal Nch MOSFET ID:0.4A | 0In Stock | Si | SMD/SMT | SOT-346-3 | N-Channel | 1 Channel | 60 V | 400 mA | 1.05 Ohms | 20 V | 1.1 V | 390 pC | - 55 C | + 150 C | 900 mW | Enhancement | AEC-Q101 | U-MOSVII-H | Reel | |||
Mfr: SSM3K44MFV,L3F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Sm-signal/Hi-Speed VESM (SOT-723) | 0In Stock | Si | SMD/SMT | VESM-3 | N-Channel | 1 Channel | 30 V | 100 mA | 4 Ohms | 20 V | 1.5 V | - 55 C | + 150 C | 150 mW | Enhancement | AEC-Q101 | MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | TSOP-6F | N-Channel | 1 Channel | 60 V | 6 A | 36 mOhms | 20 V | 2.5 V | 9.3 nC | + 175 C | 3 W | Enhancement | AEC-Q101 | Reel | ||||||
Mfr: TK70J20D,S1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 200V 70A 410W MOSVII 160nC .0029 | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 200 V | 70 A | 27 mOhms | 20 V | 3.5 V | 160 nC | - 55 C | + 150 C | 410 W | Enhancement | MOSVII | |||||
Mfr: TPN2R203NC,L1Q TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs X35PBF Power MOSFET Trans VGS10V VDS30V | Not Available Online | Si | SMD/SMT | TSON-Advance-8 | N-Channel | 1 Channel | 30 V | 45 A | 1.8 mOhms | 20 V | 2.3 V | 34 nC | - 55 C | + 150 C | 42 W | Enhancement | U-MOSVIII | Reel | ||||
Mfr: TPN1110ENH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOSVIII 200V 126m (VGS=10V) TSON-ADV | 0In Stock | Si | SMD/SMT | TSON-Advance-8 | N-Channel | 1 Channel | 200 V | 13 A | 96 mOhms | 20 V | 4 V | 7 nC | - 55 C | + 150 C | 39 W | Enhancement | U-MOSVIII-H | Reel |