Toshiba - MOSFETs
3,350 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: TK33S10N1L,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 125W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 33 A | 9.7 mOhms | - 20 V, 20 V | 1.5 V | 33 nC | - 55 C | + 175 C | 125 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | |||
0In Stock | Si | SMD/SMT | TSOP-6F | N-Channel | 1 Channel | 100 V | 3.5 A | 69 mOhms | - 20 V, 20 V | 2.5 V | 3.2 nC | + 175 C | 3 W | Enhancement | Reel | |||||||
Mfr: TK1R4F04PB,LXGQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 205W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | TO-220SM-3 | N-Channel | 1 Channel | 40 V | 160 A | 1.35 mOhms | - 20 V, 20 V | 3 V | 103 nC | + 175 C | 205 W | Enhancement | AEC-Q101 | Reel | TK1R4F04PB,LXGQ(O | ||||
0In Stock | Si | SMD/SMT | UFV-5 | N-Channel | 1 Channel | 30 V | 1.9 A | 133 mOhms | - 12 V, 12 V | 1 V | 1.9 nC | - 55 C | + 125 C | 500 mW | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 1 Channel | 30 V | 2 A | 117 mOhms | - 20 V, 20 V | 2.6 V | 5.3 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSII | Reel | ||||
0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 1 Channel | 20 V | 2 A | 126 mOhms | - 10 V, 10 V | 1 V | 3.4 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSIII | Reel | |||||
Mfr: TK35N65W,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NChannel 068ohm DTMOS | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 35 A | 68 mOhms | - 30 V, 30 V | 3.5 V | 100 nC | - 55 C | + 150 C | 270 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK35A65W,S5X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NChannel 068ohm DTMOS | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 650 V | 35 A | 68 mOhms | - 30 V, 30 V | 3.5 V | 100 nC | - 55 C | + 150 C | 50 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TPH6400ENH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs X35PBF Power MOSFET Trans VGS10VVDS200V | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 200 V | 13 A | 54 mOhms | - 20 V, 20 V | 4 V | 11.2 nC | - 55 C | + 150 C | 57 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: TK380P60Y,RQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOSV 600V 80W 590pF 9.7A | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 9.7 A | 380 mOhms | - 30 V, 30 V | 4 V | 20 nC | - 55 C | + 150 C | 80 W | Enhancement | DTMOSV | Reel | ||||
Mfr: TK190A65Z,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET 650V 190mOhms DTMOS-VI | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 15 A | 190 mOhms | - 30 V, 30 V | 4 V | 25 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
Mfr: XSM6K336NW,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-ch MOSFET, 30 V, 3.0 A, 0.095 ohm at 10V, DFN2020B(WF) | 0In Stock | Si | SMD/SMT | DFN-6 | N-Channel | 1 Channel | 30 V | 3 A | 95 mOhms | 20 V | 2.5 V | 1.7 nC | + 150 C | 3.3 W | Enhancement | Reel | ||||||
Mfr: TK6R8A08QM,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOS10 TO-220SIS 80V 6.8mohm | 0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 80 V | 58 A | 6.8 mOhms | - 20 V, 20 V | 3.5 V | 39 nC | + 175 C | 41 W | Enhancement | Tube | TK6R8A08QM,S4X(S | |||||
Mfr: TK034N60Z5,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 600 V 0.034 Ohm N-ch MOSFET TO-247 DTMOS | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 60 A | 34 mOhms | 30 V | 4.5 V | 105 nC | + 150 C | 360 W | Enhancement | Tube | ||||||
Mfr: TK080Z60Z1,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 600 V 0.080 Ohm N-ch MOSFET TO-247-4L(X) DTMOS | 0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 600 V | 30 A | 80 mOhms | 30 V | 4 V | 43 nC | + 150 C | 211 W | Enhancement | Tube | ||||||
Mfr: TK095E65Z5,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 650 V 0.095 Ohm N-ch MOSFET TO-220 DTMOS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 29 A | 95 mOhms | 30 V | 4.5 V | 50 nC | + 150 C | 230 W | Enhancement | Tube | ||||||
Mfr: TK099Z60Z1,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 600 V 0.099 Ohm N-ch MOSFET TO-247-4L(X) DTMOS | 0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 600 V | 25 A | 99 mOhms | 30 V | 4 V | 36 nC | + 150 C | 176 W | Enhancement | Tube | ||||||
Mfr: TK155E60Z1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 600 V 0.155 Ohm N-ch MOSFET TO-220 DTMOS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 17 A | 155 mOhms | 30 V | 4 V | 24 nC | + 150 C | 130 W | Enhancement | Tube | ||||||
Mfr: TK190A60Z1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 600 V 0.190 Ohm N-ch MOSFET TO-220SIS DTMOS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 14 A | 190 mOhms | 30 V | 4 V | 20 nC | + 150 C | 40 W | Enhancement | Tube | ||||||
Mfr: TK200A65Z5,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 650 V 0.200 Ohm N-ch MOSFET TO-220SIS DTMOS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 15 A | 200 mOhms | 30 V | 4.5 V | 26 nC | + 150 C | 40 W | Enhancement | Tube | ||||||
Mfr: TK200E65Z5,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 650 V 0.200 Ohm N-ch MOSFET TO-220 DTMOS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 15 A | 200 mOhms | 30 V | 4.5 V | 26 nC | + 150 C | 130 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 100 V | 2 A | 125 mOhms | 20 V | 2.5 V | 3.6 nC | + 150 C | 2 W | Enhancement | Reel | ||||||||
Mfr: TK125Z60Z1,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 600 V 0.125 Ohm N-ch MOSFET TO-247-4L(X) DTMOS | 0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 600 V | 20 A | 125 mOhms | 30 V | 4 V | 28 nC | + 150 C | 150 W | Enhancement | Tube | ||||||
Mfr: SSM6K389NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-ch MOSFET, 60 V, 2 A, 155 m at 10 V, TSOP6F | 0In Stock | Si | SMD/SMT | UDFN-6B | N-Channel | 1 Channel | 60 V | 2 A | 171 mOhms | 20 V | 2.1 V | 1.84 nC | + 150 C | 3 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 30 A | 90 mOhms | - 30 V, 30 V | 3 V | 47 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSVI | Tube |
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