Toshiba - MOSFETs
3,835 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: TK11A55D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 10A 40V 25W 410pF 520 mOhms | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 500 V | 11 A | 520 mOhms | 25 W | MOSVII | Tube | ||||||||||
Mfr: TK14A55D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 14A 550V 50W 2300pF 0.37 | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 550 V | 14 A | 370 mOhms | 50 W | MOSVII | Tube | ||||||||||
Mfr: TK6A50D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 6A 500V 35W 540pF 1.4 Ohm | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 500 V | 6 A | 1.4 Ohms | 35 W | MOSVII | Tube | ||||||||||
Mfr: TK9A55DA(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 8.5A 550V 40W 1050pF 0.86 | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 550 V | 8.5 A | 860 mOhms | 40 W | MOSVII | Tube | ||||||||||
0In Stock | Si | SMD/SMT | UFV-5 | N-Channel | 1 Channel | 30 V | 1.9 A | 133 mOhms | 12 V | 1 V | 1.9 nC | - 55 C | + 125 C | 500 mW | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 1 Channel | 30 V | 2 A | 117 mOhms | 20 V | 2.6 V | 5.3 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSII | Reel | ||||
0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 1 Channel | 20 V | 2 A | 126 mOhms | 10 V | 1 V | 3.4 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSIII | Reel | |||||
Mfr: TJ8S06M3L,LXHQ TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs 27W 1MHz Automotive; AEC-Q101 | Not Available Online | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 8 A | 104 mOhms | - 20 V, 10 V | 3 V | 19 nC | + 175 C | 27 W | Enhancement | AEC-Q101 | Reel | TJ8S06M3L,LXHQ(O | ||||
Mfr: TK2K2A60F,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=30W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 3.5 A | 2.2 Ohms | 30 V | 4 V | 13 nC | - 55 C | + 150 C | 30 W | Enhancement | MOSIX | Tube | ||||
Mfr: TK6R7A10PL,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=42W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 56 A | 10.1 mOhms | 20 V | 2.5 V | 58 nC | - 55 C | + 175 C | 42 W | Enhancement | U-MOSIX-H | Tube | ||||
0In Stock | Si | SMD/SMT | 2-10AF1A-9 | N-Channel | 1 Channel | 650 V | 18 A | 122 mOhms | 30 V | 4 V | 29 nC | - 55 C | + 150 C | 150 W | Enhancement | Reel | ||||||
Mfr: TK6R8A08QM,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOS10 TO-220SIS 80V 6.8mohm | 0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 80 V | 58 A | 6.8 mOhms | 20 V | 3.5 V | 39 nC | + 175 C | 41 W | Enhancement | Tube | TK6R8A08QM,S4X(S | |||||
Mfr: TK190A65Z,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET 650V 190mOhms DTMOS-VI | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 15 A | 190 mOhms | 30 V | 4 V | 25 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
Mfr: SSM3J168F,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS Low RON Vds:-60 V Vgss:+10/-20V Id: | 0In Stock | Si | SMD/SMT | S-Mini-3 | P-Channel | 1 Channel | 60 V | 400 mA | 2 Ohms | - 20 V, 10 V | 2 V | 3 nC | + 150 C | 1.2 W | Enhancement | AEC-Q101 | Reel | |||||
Mfr: SSM6N62TU,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS Low RON Dual Nc h Id:0.8A, Vdss: 20 | 0In Stock | Si | SMD/SMT | UF6-6 | N-Channel | 1 Channel | 20 V | 800 mA | 456 mOhms | 8 V | 1 V | 2 nC | + 150 C | 500 mW | Enhancement | AEC-Q101 | Reel | |||||
Mfr: TK1R4F04PB,LXGQ TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs 205W 1MHz Automotive; AEC-Q101 | Not Available Online | Si | SMD/SMT | TO-220SM-3 | N-Channel | 1 Channel | 40 V | 160 A | 1.35 mOhms | 20 V | 3 V | 103 nC | + 175 C | 205 W | Enhancement | AEC-Q101 | Reel | TK1R4F04PB,LXGQ(O | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 30 A | 90 mOhms | 30 V | 3 V | 47 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSVI | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 9.5 A | 550 mOhms | 20 V | 3 V | 19 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSVI | Tube | |||||
Mfr: SSM3J378R,LXHF TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs P Channel -20V -6A AECQ MOSFET | Not Available Online | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 6 A | 29.8 mOhms | - 8 V, 6 V | 1 V | 12.8 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | Reel | ||||
0In Stock | Si | SMD/SMT | 2-10AF1A-9 | N-Channel | 1 Channel | 650 V | 38 A | 51 mOhms | 30 V | 4 V | 62 nC | - 55 C | + 150 C | 270 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 25 A | 120 mOhms | 30 V | 3 V | 60 nC | - 55 C | + 150 C | 180 W | Enhancement | DTMOSIV-H | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 650 V | 11.1 A | 350 mOhms | 30 V | 2.5 V | 25 nC | - 55 C | + 150 C | 100 W | Enhancement | DTMOSIV | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 13.7 A | 250 mOhms | 30 V | 3 V | 40 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Tube | |||||
Not Available Online | Si | Reel | ||||||||||||||||||||
Mfr: TK155E60Z1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 600 V 0.155 Ohm N-ch MOSFET TO-220 DTMOS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 17 A | 155 mOhms | 30 V | 4 V | 24 nC | + 150 C | 130 W | Enhancement | Tube |