Toshiba - MOSFETs
3,378 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: TK6A53D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 6A 525V 35W 600pF 1.3 Ohm | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 525 V | 6 A | 1.3 Ohms | 35 W | MOSVII | Tube | ||||||||||
0In Stock | Si | SMD/SMT | CST3-3 | N-Channel | 1 Channel | 20 V | 200 mA | 5.6 Ohms | - 10 V, 10 V | 350 mV | - 55 C | + 150 C | 100 mW | Enhancement | U-MOSIII | Reel | ||||||
Mfr: TK20J60W,S1VE TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-3PN PD=165W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 20 A | 155 mOhms | - 30 V, 30 V | 3.7 V | 48 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tray | ||||
0In Stock | Si | SMD/SMT | TSOP-6F | N-Channel, P-Channel | 2 Channel | 20 V, 30 V | 4 A | 39.1 mOhms, 45 mOhms | - 12 V, - 8 V, 6 V, 12 V | 1 V, 1.2 V | 3.2 nC, 6.7 nC | + 150 C | 1.8 W | Enhancement | AEC-Q101 | Reel | ||||||
0In Stock | Si | SMD/SMT | TSON-8 | P-Channel | 1 Channel | 30 V | 23 A | 7.8 mOhms | - 25 V, 20 V | 800 mV | 76 nC | - 55 C | + 150 C | 30 W | Enhancement | U-MOSVI | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 900 V | 2.5 A | 4.6 Ohms | - 30 V, 30 V | 2.5 V | 15 nC | - 55 C | + 150 C | 35 W | Enhancement | MOSVIII | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 90 A | 4.3 mOhms | - 20 V, 10 V | 1 V | 172 nC | - 55 C | + 175 C | 180 W | Enhancement | U-MOSVI | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 18 A | 139 mOhms | - 20 V, 20 V | 1.5 V | 60 nC | - 55 C | + 150 C | 45 W | Enhancement | MOSVII | Tube | |||||
Mfr: TK9A60D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 9A 600V 45W 1200pF 0.83 | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 600 V | 9 A | 830 mOhms | 45 W | MOSVII | Tube | ||||||||||
0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 57 A | 40 mOhms | - 30 V, 30 V | 4 V | 105 nC | - 55 C | + 150 C | 360 W | Enhancement | DTMOSVI | Reel | |||||
Mfr: TK2Q60D(Q) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 2A 600V 60W 280pF 4.3 Ohm | 0In Stock | Si | Through Hole | PW-Mold2-3 | N-Channel | 1 Channel | 600 V | 2 A | 4.3 Ohms | - 30 V, 30 V | 2.4 V | 7 nC | - 55 C | + 150 C | 60 W | Enhancement | MOSVII | Reel | ||||
Not Available Online | Si | SMD/SMT | TO-220-3 | N-Channel | 1 Channel | 100 V | 160 A | 2.4 mOhms | - 20 V, 20 V | 3.5 V | 122 nC | 375 W | Enhancement | |||||||||
Mfr: TK095Z65Z5,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 650 V 0.095 Ohm N-ch MOSFET TO-247-4L(X) DTMOS | 0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 29 A | 95 mOhms | 30 V | 4.5 V | 50 nC | + 150 C | 230 W | Enhancement | Tube | ||||||
Mfr: TK115Z65Z5,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 650 V 0.115 Ohm N-ch MOSFET TO-247-4L(X) DTMOS | 0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 24 A | 115 mOhms | 30 V | 4.5 V | 42 nC | + 150 C | 190 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | UDFN-6B | N-Channel | 1 Channel | 20 V | 6 A | 108 mOhms | - 8 V, 8 V | 1 V | 3.6 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | ||||||
Mfr: SSM6N36FE,LM TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 20V VDSS 10V VGSS N-Ch 150mW PD 1.5V | 0In Stock | Si | SMD/SMT | ES6-6 | N-Channel | 2 Channel | 20 V | 500 mA | 630 mOhms | - 10 V, 10 V | 350 mV | 1.23 nC | - 55 C | + 150 C | 150 mW | Enhancement | AEC-Q100 | U-MOSIII | Reel | |||
Mfr: SSM3J35AFS,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=-.25A VDSS=-20V | 0In Stock | Si | SMD/SMT | SOT-416-3 | P-Channel | 1 Channel | 20 V | 250 mA | 1.1 Ohms | - 10 V, 10 V | 1 V | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVII | Reel | |||||
Mfr: TJ200F04M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 375W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | TO-220SM-3 | P-Channel | 1 Channel | 40 V | 200 A | 1.8 mOhms | - 20 V, 10 V | 3 V | 460 nC | + 175 C | 375 W | Enhancement | AEC-Q101 | Reel | TJ200F04M3L,LXHQ(O | ||||
Mfr: TK5A60D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 5A 600V 35W 700pF 1.43 Ohm | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 600 V | 5 A | 1.2 Ohms | - 30 V, 30 V | 4.4 V | 16 nC | - 55 C | + 150 C | 35 W | Enhancement | MOSVII | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 11 A | 28 mOhms | - 20 V, 20 V | 2.5 V | 15 nC | - 55 C | + 175 C | 65 W | Enhancement | AEC-Q101 | Reel | |||||
Mfr: SSM3K37FS,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small Low ON Resistane MOSFETs | 0In Stock | Si | SMD/SMT | SOT-416-3 | N-Channel | 1 Channel | 20 V | 200 mA | 2.2 Ohms | - 10 V, 10 V | 350 mV | - 55 C | + 150 C | 100 mW | Enhancement | U-MOSIII | Reel | |||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 100 V | 190 A | 2.7 mOhms | 20 V | 4.3 V | 52 nC | + 175 C | 210 W | Enhancement | Reel | |||||||
Mfr: TK1R5R04PB,LXGQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 205W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 40 V | 160 A | 1.5 mOhms | - 20 V, 20 V | 3 V | 103 nC | + 175 C | 205 W | Enhancement | AEC-Q101 | Reel | TK1R5R04PB,LXGQ(O | ||||
Mfr: TK40S06N1L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 2W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 40 A | 10.5 mOhms | - 20 V, 20 V | 2.5 V | 26 nC | + 175 C | 88.2 W | Enhancement | AEC-Q101 | Reel | TK40S06N1L,LXHQ(O | ||||
Mfr: XPN7R104NC,L1XHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 65W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | TSON-Advance-8 | N-Channel | 1 Channel | 40 V | 20 A | 7.1 mOhms | - 20 V, 20 V | 2.5 V | 21 nC | + 175 C | 65 W | Enhancement | AEC-Q101 | Reel | XPN7R104NC,L1XHQ(O |
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